JP2011515834A - 均一な結晶シリコン薄膜を製造するリソグラフィ方法 - Google Patents
均一な結晶シリコン薄膜を製造するリソグラフィ方法 Download PDFInfo
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L27/1259—Multistep manufacturing methods
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Abstract
Description
本願は、参照により全体として本明細書に組み込む、2008年2月29日に出願され、「リソグラフィに基づく順次横方向結晶化(LITHOGRAPHY BASED SEQUENTIAL LATERAL SOLIDIFICATION)」と題される同時係属米国出願番号第61/032744号に対して、特許法第119条(e)の元で優先権の利益を主張する。
他の実施形態では、フラッシュランプを使用できる。フラッシュランプは、ウェハ全体またはガラス・パネルも加工できるようにする。理想的な光源は特定の用途しだいである。フラッシュランプは、より安価な処理、より長い横方向成長であるがおそらくより欠陥のある横方向成長、および表面粗度の増加をもたらす一方で、基板および(3D−ICでは電子デバイスである可能性がある)下にある構造により負担をかける。表面粗度は、化学機械研磨(CMP)で削減できる。
Claims (38)
- 横方向に成長した結晶粒の少なくとも1つの領域を備える半導体膜であって、前記粒子は、少なくとも1組の実質的に平行な長い粒子境界と、隣接する長い粒子境界間に及ぶ複数の横方向に成長した粒子とを備え、前記粒子は、約50%を超える粒子が横方向成長長さよりも長い長さを有する実質的に均一な粒子構造を有する、半導体膜と、
結晶粒の少なくとも1つの長い粒子境界の位置を基準にして規定される位置にある前記領域内に位置するデバイスと、
を備える装置。 - 前記膜上の長い粒子境界の位置が、横方向成長長さの10%未満の精度で知られている、請求項1に記載の装置。
- 前記膜上の長い粒子境界の位置が、横方向成長長さの5%未満の精度で知られている、請求項1に記載の装置。
- 前記デバイスがトランジスタである、請求項1に記載の装置。
- トランジスタが、電界効果トランジスタ(FET)であり、FETのチャネルが長い粒子境界を含まない位置にある領域の中に配置される請求項4に記載の装置。
- FETが、FETのソースまたはドレインが長い粒子境界を含まない位置にある領域の中に配置される、請求項4に記載の装置。
- FETが、チャネルが既知の位置で長い粒子領域に交差する位置にある領域の中に配置される請求項4に記載の装置。
- 複数の横方向に成長した結晶アイランドを備える半導体膜であって、前記アイランドが少なくとも1つの長い粒子境界を備え、該長い粒子境界が、横方向成長長さより大きいアイランド中心からの距離にあるアイランドの1つを取り囲み、アイランドの内部領域が実質的に均一な膜厚を有する、半導体膜と、
結晶アイランドの少なくとも1つの長い粒子領域の位置を基準にして規定される位置にある前記領域内に位置するデバイスと、
を備える装置。 - 90%を超えるアイランドが、同じ表面結晶学的な表面配向を有する、請求項8に記載の装置。
- 結晶学的な表面配向が、{100}平面である、請求項9に記載の装置。
- 結晶粒配向が、{100}極の約15°の範囲内の{100}表面配向を有するアイランド表面積の約90%を備える、請求項9に記載の装置。
- 結晶学的な表面配向が{111}平面である、請求項9に記載の装置。
- 結晶粒配向が、{111}極の約15°の範囲内の{111}表面配向を有するアイランド表面積の約90%を備える、請求項9に記載の装置。
- 前記膜の上の長い粒子境界の位置が、横方向成長長さの20%未満の精度で知られている、請求項8に記載の装置。
- 前記膜の上の長い粒子境界の位置が、横方向成長長さの10%未満の精度で知られている、請求項8に記載の装置。
- 前記デバイスがチャネルソースおよびドレインを備えるFETである、請求項8に記載の装置。
- FETが、FETのチャネルが長い粒子境界を含まない位置にある領域の中に配置される、請求項16に記載の装置。
- 半導体膜の第1の領域を、リソグラフィで画成される、前記膜の第1の境界から制御式超横方向成長を引き起こす第1セットの条件の元で第1の照射を行うことと、
第1の領域に部分的にしか重複しない、前記膜の第2の領域を、リソグラフィで画成される、前記膜の中の第2の境界から制御された超横方向成長を引き出す第2セットの条件の元で第2の照射を行うことと、
前記第1の照射を行うことと、第2の照射を行うこととが、横方向成長長さよりも長い長さおよび少なくとも1つの長い粒子境界を有する、横方向に成長した結晶粒を備える膜を提供し、長い粒子境界の位置が横方向成長長さの20%以内で知られており、
長い粒子境界の位置を基準にして規定される位置にある半導体膜の中に電子デバイスを製造することと、を含む装置を製造する方法。 - 第1の領域、第2の領域、または両方の照射が、半導体膜をその厚さ全体で融解させる、請求項18に記載の方法。
- 第1の照射および第2の照射のうちの少なくとも1つが投光照射である、請求項18に記載の方法。
- リソグラフィで画成される境界が、前記膜の少なくとも一部の上にリソグラフィでキャップ層を形成することによって設けられる、請求項18に記載の方法。
- キャップが、下にある半導体膜を、リソグラフィで画成された場所で照射に露光するパターンを有する、請求項21に記載の方法。
- リソグラフィで画成される境界が、前記膜の下に置かれる下部層によって設けられる、請求項18に記載の方法。
- 下部層が熱吸収材料であり、半導体膜によって吸収される波長を使用する照射の間、リソグラフィで画成された位置の、上にある半導体膜の温度が半導体膜の隣接領域の温度に満たない、請求項23に記載の方法。
- 下部層が熱吸収材料である材料であり、半導体膜に対して透明な波長を使用する照射の間、リソグラフィで画成された位置の、上にある半導体膜の温度が、半導体膜の隣接する領域の温度を超えている、請求項23に記載の方法。
- キャップ層が、照射のエネルギーに対して不透明である材料から構成される、請求項18に記載の方法。
- キャップ層が、照射のエネルギーに対して反射性である材料から構成される、請求項18に記載の方法。
- キャップ層が、リソグラフィで画成されたドットまたはドットの列である、請求項18に記載の方法。
- 前記照射が、
リソグラフィで画成された第1のドット・キャップ層を取り囲む第1の領域を照射し、第1のドットの下の領域が少なくとも部分的に固体のままである間に、第1の領域を融解させることであって、前記融解した領域が固体と液体の間の界面から結晶化される、第1の領域を照射することと、
第1のドット・キャップ層を取り除くことと、
第2のドット層をリソグラフィで付着することであって、第2のドット・キャップ層が、第1の照射の横方向に結晶化された部分に重なる、第2のドット層をリソグラフィで付着することと、
リソグラフィで付着された第2のドット・キャップ層を取り囲む第2の領域を照射し、第1のドットの下の領域が少なくとも部分的に固体のままである間に、第2の領域を融解させることであって、前記融解した領域が固体と液体の間の界面から結晶化される、第2の領域を照射することと、
を含む請求項28に記載の方法。 - キャップ層が、下にある半導体膜の細長い領域を露光し、露光された領域が、半導体膜の特徴的な横方向成長長さの2倍未満である少なくとも1つの寸法を有する形状を画成する、請求項18に記載の方法。
- 前記照射ステップが、
下にある膜の露光された細長い領域を完全に融解させるために、第1のキャップ層の下の領域が少なくとも部分的に固体のままである間に、膜の少なくとも一部を照射することであって、融解した領域が固体と液体の間の界面から横方向に結晶化される、膜の少なくとも一部を照射することと、
第1のキャップ層を取り除くことと、
第1の照射の横方向に結晶化された部分に重なる第2のキャップ層をリソグラフィで付着することと、
下にある膜の露光された細長い領域を完全に融解させるために、第1のキャップ層の下の領域が少なくとも部分的に固体のままである間に、膜の少なくとも一部を照射することであって、融解した領域が固体と液体の間の界面から横方向に結晶化される、膜の少なくとも一部を照射することと、
を含む、請求項30に記載の方法。 - 長い粒子境界の位置が、リソグラフィで配置された境界の位置および粒子の横方向成長長さによって指示される、請求項18に記載の方法。
- 膜の上の長い粒子境界の位置が、横方向成長長さの10%未満の精度まで知られている、請求項18に記載の方法。
- 膜の上の長い粒子境界の位置が、横方向成長長さの5%未満の精度まで知られている、請求項18に記載の方法。
- 膜の上の長い粒子境界の位置が、横方向成長長さの20%未満の精度まで知られている、請求項29に記載の方法。
- デバイスがFETを備える、請求項18に記載の方法。
- 半導体膜の下にヒートシンクを配置した前記膜を提供することであって、前記ヒートシンクがリソグラフィ方法を使用して配置される、前記半導体膜を提供することと、
ヒートシンクの上方に位置する膜領域を部分的にだけ融解させ、この部分的に融解した領域に隣接する前記膜を完全に融解させるために十分なエネルギー密度で膜を照射することであって、融解した領域が部分的に融解した領域と液体の界面から横方向に結晶化される、膜を照射することと、
横方向に結晶化された膜の一部を露光するパターンで膜の上にキャップ層を配置することと、
露光した膜を、キャップ層の下にある領域が少なくとも部分的に固体でのままである間に、その厚さ全体で融解させるために十分なエネルギー密度で膜を照射することであって、融解した領域が、固体と液体の界面から横方向に結晶化する、膜を照射することと、
を備える膜を加工する方法。 - 半導体膜の一部を露光するパターンを有する膜の上方に、リソグラフィ方法を使用して配置される第1のキャップ層を付着させた半導体膜を提供することと、
膜の露光された部分を、第1のキャップ層の下の領域が少なくとも部分的に固体のままである間に、その厚さ全体で完全に融解させるために十分な第1のエネルギー密度で膜を照射することであって、融解した領域が、部分的に融解した領域と液体の界面から横方向に結晶化される、膜を照射することと、
横方向に結晶化された膜の一部を露光するパターンで、膜の上に第2のキャップ層を配置することと、
膜の露光された部分を、第2のキャップ層の下の領域が少なくとも部分的に固体のままである間に、その厚さ全体で完全に融解させるために十分な第2のエネルギー密度で膜を照射することであって、融解した領域が、部分的に融解した領域と液体の界面から横方向に結晶化される、膜を照射することと、
を含む、膜を加工する方法。
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Also Published As
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KR20100132020A (ko) | 2010-12-16 |
TW200952089A (en) | 2009-12-16 |
US20110175099A1 (en) | 2011-07-21 |
WO2009108936A1 (en) | 2009-09-03 |
TWI452632B (zh) | 2014-09-11 |
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