JP2011513987A - リソグラフィ装置、プラズマ源、および反射方法 - Google Patents
リソグラフィ装置、プラズマ源、および反射方法 Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
【選択図】 図2
Description
本願は、2008年3月3日に出願した米国仮出願第61/064385号の優先権を主張し、その全体を本願に参考として組み込む。
Claims (14)
- プラズマ形成部位を囲む容器と、前記容器へまたは前記容器から光放射を伝達する光デバイスと、前記光デバイスと前記プラズマ形成部位源との間の光路に配置され、前記光デバイスと前記プラズマ形成部位との間で前記光放射を反射するリフレクタとを含み、前記リフレクタは、動作中、溶融金属ミラーとして形成される、プラズマ源を含むリソグラフィ装置。
- 前記プラズマ形成部位の見通し線内に配置され、前記光デバイスをデブリから保護するシールドをさらに含む、請求項1に記載のリソグラフィ装置。
- 前記溶融金属ミラーは、スズ溶融物を含む、請求項1または2に記載のリソグラフィ装置。
- 前記プラズマ形成部位は、スズまたはリチウムを含む、先行する請求項のいずれか一項に記載のリソグラフィ装置。
- 前記光デバイスは、前記プラズマ形成部位の放電領域においてプラズマを生成するレーザデバイスである、先行する請求項のいずれか一項に記載のリソグラフィ装置。
- 前記ミラーは、ミラー形成要素を含み、溶融金属供給源が前記ミラー形成要素を濡らすために与えられる、先行する請求項のいずれか一項に記載のリソグラフィ装置。
- 前記ミラー形成要素は、重力方向に対して傾斜した角度において前記溶融金属供給源の槽内に配置される、請求項6に記載のリソグラフィ装置。
- 前記溶融金属ミラーは、前記ミラー形成要素を溶融金属で濡らすように前記槽の中で前記ミラー形成要素を回転させることにより形成される、請求項6または7に記載のリソグラフィ装置。
- 前記ミラー形成要素は、前記光放射の集束力を与えるために湾曲される、請求項6、7または8に記載のリソグラフィ装置。
- 前記ミラー形成要素は、金またはモリブデンを含む表面層を有する、請求項6から9のいずれか一項に記載のリソグラフィ装置。
- プラズマ形成部位を囲む容器と、
前記容器へまたは前記容器から放射を伝達する光デバイスと、
前記光デバイスと前記プラズマ形成部位との間の光路に配置され、前記光デバイスと前記プラズマ形成部位との間で前記放射を反射するリフレクタと、
を含み、
前記リフレクタは、動作中、溶融金属ミラーとして形成される、プラズマ源。 - 光デバイスとプラズマ源との間で放射を伝達する方法であって、
容器内に密封されたプラズマ源を与えることと、
前記容器へまたは前記容器から光放射を伝達するための光デバイスを与えることと、
前記光デバイスへまたは前記光デバイスから前記光放射を反射させるための、前記プラズマ源の見通し線内に配置された溶融金属ミラーを与えることと、
を含む方法。 - 光デバイスとプラズマ源内のプラズマ形成部位との間で放射を伝達する方法であって、
前記プラズマ形成部位を容器内に密封することと、
前記光デバイスを用いて前記容器へまたは前記容器から光放射を与えることと、
前記プラズマ形成部位の見通し線内に配置された溶融金属ミラーを用いて前記光デバイスへまたは前記光デバイスから前記光放射を反射させることと、
を含む方法。 - 放射を発生するプラズマ源であって、プラズマ形成部位を囲む容器と、前記容器へまたは前記容器から光放射を伝達する光デバイスと、前記光デバイスと前記プラズマ形成部位との間の光路に配置され、前記光デバイスと前記プラズマ形成部位との間で前記光放射を反射するリフレクタとを含み、前記リフレクタは、動作中、溶融金属ミラーとして形成される、プラズマ源と、
前記放射を調整するイルミネータと、
前記放射にパターンを付けるパターニングデバイスと、
前記パターン付き放射を基板上に投影する投影システムと、
を含むリソグラフィ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6438508P | 2008-03-03 | 2008-03-03 | |
US61/064,385 | 2008-03-03 | ||
PCT/NL2009/050096 WO2009110793A1 (en) | 2008-03-03 | 2009-03-03 | Lithographic apparatus, plasma source, and reflecting method |
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JP2011513987A true JP2011513987A (ja) | 2011-04-28 |
JP5583033B2 JP5583033B2 (ja) | 2014-09-03 |
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JP2010549598A Expired - Fee Related JP5583033B2 (ja) | 2008-03-03 | 2009-03-03 | リソグラフィ装置およびプラズマ源 |
Country Status (7)
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US (1) | US8593617B2 (ja) |
JP (1) | JP5583033B2 (ja) |
KR (1) | KR101591686B1 (ja) |
CN (1) | CN101971100B (ja) |
NL (1) | NL1036613A1 (ja) |
TW (1) | TWI420251B (ja) |
WO (1) | WO2009110793A1 (ja) |
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JP2015530605A (ja) * | 2012-06-14 | 2015-10-15 | ユニバーシティ・カレッジ・ダブリン,ナショナル・ユニバーシティ・オブ・アイルランド,ダブリン | 自己洗浄式光学系 |
US10028365B2 (en) | 2015-04-28 | 2018-07-17 | Gigaphoton Inc. | Chamber device, target generation method, and extreme ultraviolet light generation system |
US10548209B2 (en) | 2016-09-30 | 2020-01-28 | Gigaphoton Inc. | Chamber apparatus, target generation method, and EUV light generation apparatus |
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JP5511705B2 (ja) * | 2011-02-10 | 2014-06-04 | ギガフォトン株式会社 | ターゲット供給装置及び極端紫外光生成装置 |
US9753383B2 (en) * | 2012-06-22 | 2017-09-05 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
CN103837913B (zh) * | 2012-11-26 | 2016-05-04 | 中国科学院理化技术研究所 | 反光镜及其制作工艺 |
US9429858B2 (en) | 2013-09-24 | 2016-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rotary EUV collector |
US20170311429A1 (en) * | 2016-04-25 | 2017-10-26 | Asml Netherlands B.V. | Reducing the effect of plasma on an object in an extreme ultraviolet light source |
US10775700B2 (en) | 2018-08-14 | 2020-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography system and method for exposing wafer |
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US11340531B2 (en) | 2020-07-10 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Target control in extreme ultraviolet lithography systems using aberration of reflection image |
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JP2015530605A (ja) * | 2012-06-14 | 2015-10-15 | ユニバーシティ・カレッジ・ダブリン,ナショナル・ユニバーシティ・オブ・アイルランド,ダブリン | 自己洗浄式光学系 |
US10028365B2 (en) | 2015-04-28 | 2018-07-17 | Gigaphoton Inc. | Chamber device, target generation method, and extreme ultraviolet light generation system |
US10548209B2 (en) | 2016-09-30 | 2020-01-28 | Gigaphoton Inc. | Chamber apparatus, target generation method, and EUV light generation apparatus |
Also Published As
Publication number | Publication date |
---|---|
WO2009110793A1 (en) | 2009-09-11 |
KR20100124308A (ko) | 2010-11-26 |
CN101971100A (zh) | 2011-02-09 |
NL1036613A1 (nl) | 2009-09-07 |
KR101591686B1 (ko) | 2016-02-04 |
CN101971100B (zh) | 2013-10-16 |
US8593617B2 (en) | 2013-11-26 |
US20110007292A1 (en) | 2011-01-13 |
TWI420251B (zh) | 2013-12-21 |
JP5583033B2 (ja) | 2014-09-03 |
TW200942992A (en) | 2009-10-16 |
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