JP2011187737A - 半導体発光装置および半導体発光装置の製造方法 - Google Patents
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
【解決手段】サファイア基板20上に形成された化合物半導体層1に、ストライプ状に分離溝21を形成した後、化合物半導体層1の全面にメッキ層6を形成するため、このメッキ層6をサファイア基板20の剥離後の支持基板として用いることができる。従って、別個の支持基板を化合物半導体層1に熱圧着する必要がなくなり、熱圧着の際の熱の影響で、支持基板に反りが生じて、この反りによって支持基板に応力がかかり、支持基板が割れる等の不具合が起きなくなる。また、メッキ層6の形成は、電解メッキ法で行えるため、熱圧着するよりも製造工程数が少なくて済み、製造コスト削減が図れる。
【選択図】図1
Description
前記発光素子の一主面側に設けられる光取り出し面上に形成される第1電極層と、
前記発光素子の前記光取り出し面とは反対側の面上に形成される第2電極層と、
前記第2電極層の表面全体を覆うように形成されるシード電極層と、
前記シード電極層上に形成されるメッキ層と、を備え、
前記発光素子は、
発光層と、
前記発光層と前記第2電極層との間に配置される第2導電型半導体層と、
前記発光層と前記第1電極層との間に配置される第1導電型半導体層と、を有し、
前記発光素子は、前記第2導電型半導体層、前記発光素子および前記第1導電型半導体層の順に徐々に幅が小さくなる順テーパ状であることを特徴とする半導体発光装置が提供される。
前記発光部に、所定の間隔で前記基板まで達するストライプ状の分離溝を複数形成する工程と、
前記分離溝で分離された前記発光部上に第2電極層を形成する工程と、
前記第2電極層の表面全体を覆うようにシード電極層を形成する工程と、
前記シード電極の表面全体をメッキしてメッキ層を形成する工程と、
前記分離溝に沿って、前記分離溝とは反対側の前記基板の面にレーザを照射して、レーザリフトオフ法により前記基板を剥離する工程と、
前記発光部をエッチングにより素子分離して順テーパ状の複数の発光素子を形成する工程と、
前記複数の発光素子の少なくとも側壁に絶縁膜を形成する工程と、
前記複数の発光素子の上面の少なくとも一部を粗面化して光取り出し面を形成する工程と、
前記複数の発光素子の上面の一部に第1電極層を形成する工程と、
前記複数の発光素子を個片化する工程と、を備えることを特徴とする半導体発光素子の製造方法が提供される。
2 光取り出し面
3 n電極層
4 p電極層
5 シード電極層
6 メッキ層
7 接地電極層
11 n型半導体層
12 発光層
13 p型半導体層
20 サファイア基板
21 分離溝
22 レーザ口径
Claims (5)
- 基板上に形成される窒化物系III−V族化合物半導体を備える発光素子と、
前記発光素子の一主面側に設けられる光取り出し面上に形成される第1電極層と、
前記発光素子の前記光取り出し面とは反対側の面上に形成される第2電極層と、
前記第2電極層の表面全体を覆うように形成されるシード電極層と、
前記シード電極層上に形成されるメッキ層と、を備え、
前記発光素子は、
発光層と、
前記発光層と前記第2電極層との間に配置される第2導電型半導体層と、
前記発光層と前記第1電極層との間に配置される第1導電型半導体層と、を有し、
前記発光素子は、前記第2導電型半導体層、前記発光素子および前記第1導電型半導体層の順に徐々に幅が小さくなる順テーパ状であることを特徴とする半導体発光装置。 - 前記シード電極層は、
前記第2電極層の表面全体を覆うように形成され、前記メッキ層中の金属が前記第2電極層に拡散するのを防止可能な金属材料を含む第1層と、
前記第1層および前記メッキ層に接するように形成され、前記メッキ層中の金属と混和する第2層と、を有することを特徴とする請求項1に記載の半導体発光装置。 - 前記第2電極層は、前記第1層と接するように形成され、前記発光層で発光された光を反射する高反射電極層を有し、
前記第1層は、前記高反射電極層より表面積が大きく、かつ前記高反射電極層より厚いことを特徴とする請求項2に記載の半導体発光素子。 - 基板上に窒化物系III−V族化合物半導体を備える発光部を形成する工程と、
前記発光部に、所定の間隔で前記基板まで達するストライプ状の分離溝を複数形成する工程と、
前記分離溝で分離された前記発光部上に第2電極層を形成する工程と、
前記第2電極層の表面全体を覆うようにシード電極層を形成する工程と、
前記シード電極の表面全体をメッキしてメッキ層を形成する工程と、
前記分離溝に沿って、前記分離溝とは反対側の前記基板の面にレーザを照射して、レーザリフトオフ法により前記基板を剥離する工程と、
前記発光部をエッチングにより素子分離して順テーパ状の複数の発光素子を形成する工程と、
前記複数の発光素子の少なくとも側壁に絶縁膜を形成する工程と、
前記複数の発光素子の上面の少なくとも一部を粗面化して光取り出し面を形成する工程と、
前記複数の発光素子の上面の一部に第1電極層を形成する工程と、
前記複数の発光素子を個片化する工程と、を備えることを特徴とする半導体発光素子の製造方法。 - 前記レーザリフトオフ法では、レーザの光端が前記分離溝に重なるようにレーザの位置合わせをした後にレーザを照射および走査することを特徴とする請求項4に記載の半導体発光素子の製造方法。
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US12/874,625 US8334153B2 (en) | 2010-03-09 | 2010-09-02 | Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
US13/689,841 US8766305B2 (en) | 2010-03-09 | 2012-11-30 | Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
US14/284,501 US9209362B2 (en) | 2010-03-09 | 2014-05-22 | Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
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US8766305B2 (en) | 2014-07-01 |
US20110220935A1 (en) | 2011-09-15 |
US20140284647A1 (en) | 2014-09-25 |
US20130153922A1 (en) | 2013-06-20 |
US9209362B2 (en) | 2015-12-08 |
US8334153B2 (en) | 2012-12-18 |
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