JP4996706B2 - 半導体発光素子およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010410 layer Substances 0.000 claims description 126
- 150000004767 nitrides Chemical class 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 10
- 239000012670 alkaline solution Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 29
- 230000001070 adhesive effect Effects 0.000 description 29
- 239000010408 film Substances 0.000 description 24
- 239000013078 crystal Substances 0.000 description 22
- 238000005530 etching Methods 0.000 description 18
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 238000000605 extraction Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000635 electron micrograph Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
続いて、公知のリソグラフィー技術を用いて、窒化物半導体結晶膜12、14、16、18をパターニングし、半導体発光素子毎に分離する。このとき、接着メタル22はパターニングされず、半導体発光素子毎に分離された窒化物半導体結晶膜間には、接着メタル22が露出した状態となる。また、パターニングされた窒化物半導体結晶膜は、GaN層12からp型GaN層18に向かうにつれて膜面の面積が連続的に増大する、断面がテーパー形状のメサとなる。
次に、このような凹凸が形成された後のn電極44側からみた平面図を図6に示す。図6からわかるように、分離されていない素子が複数個、Si基板30上に配置されている。その後、図3(c)に示すように、シリコン基板30の、n電極44が形成された側と反対側の面にp電極46を形成する。
12 GaN層(バッファ層)
14 n型GaN層
16 多重量子井戸構造の活性層(InGaN層)
18 p型GaN層
20 p電極(反射コンタクト電極)
22 接着メタル
30 支持基板
32 接着メタル
40 保護層
44 n電極
46 p電極
Claims (6)
- 基板上に設けられた第1メタル層と、
前記第1メタル層上に設けられたp型窒化物半導体層と、前記p型窒化物半導体層上に設けられ窒化物半導体の多重量井戸構造を有する活性層と、前記活性層上に設けられたn型窒化物半導体層と、を有する積層膜と、
前記n型窒化物半導体層の上面の一部の領域に設けられたn電極と、
前記基板の、前記第1メタル層と反対側の面に設けられたp電極と、
前記n型窒化物半導体層の上面における前記n電極が設けられた領域以外の領域の表面に形成された凹凸領域と、
を備え、前記凹凸領域は、高低差が1μm〜3μmの第1の凹凸と、高低差が300nm以下の第1の凹凸より小さな第2の凹凸が混在し、
前記積層膜は、前記n型窒化物半導体層から前記p型窒化物半導体層に向かうにつれて膜面の面積が連続的に増大し、断面がテーパー形状であり、
前記第1メタル層側における前記p型窒化物半導体層の下面の一部の領域に設けられたコンタクト電極と、
前記p型窒化物半導体層と前記第1メタル層との間に、前記コンタクト電極を覆うとともに前記コンタクト電極および前記第1メタル層に接するように設けられ、前記第1メタル層の最小直径よりも小さくかつ前記p型窒化物半導体層の下面の最小直径よりも大きな最小直径を有する第2メタル層と、
前記n型窒化物半導体層の上面の外周領域、前記積層膜の側面、前記第2メタル層の上面における前記p型窒化物半導体層と接する領域以外の領域、および前記第1メタル層の上面における前記第2メタル層と接する領域以外の領域を覆う保護膜と、
を更に備えていることを特徴とする半導体発光素子。 - 前記n電極は、Pt、Ni、Au、Tiのいずれか含むことを特徴とする請求項1記載の半導体発光素子。
- 第1基板上に、p型窒化物半導体層、窒化物半導体の多重量井戸構造を有する活性層、およびn型窒化物半導体層を、この順序で積層された第1積層膜を設ける工程と、
前記n型窒化物半導体層の上面にn電極を形成する工程と、
前記n型窒化物半導体層の上面における前記n電極が形成された領域を除きアルカリ液を用いてウェットエッチングすることにより、前記n型窒化物半導体層の上面に凹凸領域を形成する工程と、
を備え、
前記第1基板上に前記積層膜を設ける工程は、前記第1基板上に前記積層膜を設ける前に、
第2基板上に、前記n型窒化物半導体層、前記活性層、および前記p型窒化物半導体層を、この順序で積層された第2積層膜を形成する工程と、
前記p型窒化物半導体層の上面に、複数の素子に対応したコンタクト電極を形成する工程と、
前記コンタクト電極および前記第2積層膜の上面上に、前記第2積層膜の上面の最小直径よりも大きな最小直径を有する第1メタル層を形成する工程と、
前記第1メタル層をパターニングする工程と、
前記第2積層膜を、上面から下面に向かうにつれて膜面の面積が増大する、断面がテーパー形状となるようにパターニングする工程と、
前記第1基板の上面に、前記第1メタル層の最小直径よりも大きな最小直径を有し、前記第1メタル層よりも融点の低い材料の第2メタル層を形成する工程と、
前記第2メタル層の上面に、前記第1メタル層の上面が対向するように前記第2基板を配置し、前記第2メタル層の上面と前記第1メタル層の上面とを張り合わせる工程と、
前記第2基板側からレーザを照射し前記第2基板を前記第2積層膜から剥離し、前記田2積層膜を前記第1基板に転写し、前記第1基板上に設けられた前記第1積層膜とする工程と、
を備え、
前記n型窒化物半導体層の上面にn電極を形成する工程は、
前記n型窒化物半導体層から前記p型窒化物半導体層に向かうにつれて膜面の面積が増大する、断面がテーパー形状となるように前記第1積層膜をパターニングし、各素子に分離する工程と、
前記n型窒化物半導体層の上面、前記第1積層膜の側面、前記第1メタル層の前記p型窒化物半導体層と接する領域以外の領域、および前記第2メタル層の前記第1メタル層と接する領域以外の領域を覆う保護膜を形成する工程と、
前記n型窒化物半導体層の上面における前記保護層を、外周領域を除き除去し、前記保護層が形成されている領域を除いて前記n型窒化物半導体層の上面を露出する工程と、
前記n型窒化物半導体層の露出された上面に、前記複数の素子に対応してn電極を形成する工程と、
を備えていることを特徴とする半導体発光素子の製造方法。 - 前記凹凸領域は、高低差が1μm〜3μmの第1の凹凸と、高低差が300nm以下の第1の凹凸より小さい第2の凹凸が混在することを特徴とする請求項3記載の半導体発光素子の製造方法。
- 前記アルカリ液は、水酸化カリウムまたは水酸化テトラメチルアンモニウムを含むことを特徴とする請求項3または4に記載の半導体発光素子の製造方法。
- 前記レーザは、UVレーザであることを特徴とする請求項3乃至5のいずれかに記載の半導体発光素子の製造方法。
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