JP2011071174A5 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2011071174A5 JP2011071174A5 JP2009218824A JP2009218824A JP2011071174A5 JP 2011071174 A5 JP2011071174 A5 JP 2011071174A5 JP 2009218824 A JP2009218824 A JP 2009218824A JP 2009218824 A JP2009218824 A JP 2009218824A JP 2011071174 A5 JP2011071174 A5 JP 2011071174A5
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- JP
- Japan
- Prior art keywords
- semiconductor device
- storage unit
- value
- characteristic
- set value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (1)
- 半導体装置の初期特性値に基づき定められた設定値を記憶する設定値記憶部と、
所定のタイミングにおける前記半導体装置の特性値と前記設定値記憶部に記憶された設定値とに基づき、前記半導体装置の特性劣化を検出する検出回路と、
を備える半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009218824A JP2011071174A (ja) | 2009-09-24 | 2009-09-24 | 半導体装置、及び半導体装置の特性劣化検出方法 |
US12/886,115 US8717058B2 (en) | 2009-09-24 | 2010-09-20 | Semiconductor apparatus and method of detecting characteristic degradation of semiconductor apparatus |
CN2010102956581A CN102035529A (zh) | 2009-09-24 | 2010-09-21 | 半导体装置和检测半导体装置的特性退化的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009218824A JP2011071174A (ja) | 2009-09-24 | 2009-09-24 | 半導体装置、及び半導体装置の特性劣化検出方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011071174A JP2011071174A (ja) | 2011-04-07 |
JP2011071174A5 true JP2011071174A5 (ja) | 2012-04-05 |
Family
ID=43756098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009218824A Pending JP2011071174A (ja) | 2009-09-24 | 2009-09-24 | 半導体装置、及び半導体装置の特性劣化検出方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8717058B2 (ja) |
JP (1) | JP2011071174A (ja) |
CN (1) | CN102035529A (ja) |
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CN107315138B (zh) * | 2016-04-21 | 2021-07-02 | 深圳市智鼎自动化技术有限公司 | 功率mosfet的故障预测和健康处理方法及测试*** |
CN105891427B (zh) * | 2016-06-08 | 2019-05-31 | 深圳市欧瑞博电子有限公司 | 基于云计算的传感器寿命监测方法及装置 |
CN107544011A (zh) * | 2016-06-24 | 2018-01-05 | 上海北京大学微电子研究院 | 用于预测芯片寿命的芯片内建自检电路*** |
JP6722070B2 (ja) * | 2016-09-16 | 2020-07-15 | ローム株式会社 | Dc/dcコンバータおよびその制御回路、電子機器 |
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JP7013685B2 (ja) * | 2017-06-08 | 2022-02-01 | 富士電機株式会社 | 炭化珪素半導体装置の選別方法 |
JP6755399B2 (ja) * | 2017-07-03 | 2020-09-16 | 三菱電機株式会社 | 半導体スイッチング素子の短絡保護回路 |
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CN110277814B (zh) * | 2019-06-18 | 2023-06-13 | Oppo广东移动通信有限公司 | 待充电设备及充电方法 |
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CN112653318A (zh) * | 2020-12-05 | 2021-04-13 | 西安翔腾微电子科技有限公司 | 一种外置普通电阻功率mosfet控制方法及控制器 |
CN112611956B (zh) * | 2020-12-25 | 2021-07-06 | 深圳群芯微电子有限责任公司 | 一种新能源汽车集成电路芯片测试*** |
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CN113466649B (zh) * | 2021-06-29 | 2022-10-25 | 西安交通大学 | 一种判断浪涌电流测试中SiC MOSFET失效原因的方法 |
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-
2009
- 2009-09-24 JP JP2009218824A patent/JP2011071174A/ja active Pending
-
2010
- 2010-09-20 US US12/886,115 patent/US8717058B2/en active Active
- 2010-09-21 CN CN2010102956581A patent/CN102035529A/zh active Pending
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