JP2011066416A - リソグラフィ装置およびデバイス製造方法 - Google Patents
リソグラフィ装置およびデバイス製造方法 Download PDFInfo
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- JP2011066416A JP2011066416A JP2010206356A JP2010206356A JP2011066416A JP 2011066416 A JP2011066416 A JP 2011066416A JP 2010206356 A JP2010206356 A JP 2010206356A JP 2010206356 A JP2010206356 A JP 2010206356A JP 2011066416 A JP2011066416 A JP 2011066416A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
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- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】浸漬液は入口128を介してシール部材12内に供給される。第1のチャンバ120を第2のチャンバ122と液体連通させるオリフィス121に浸漬液を押し込むことによって、浸漬液に第1の圧力降下が生じる。オリフィス121は、チャンバ120と122を隔てるプレート123内に作製された複数の個別の孔で、この複数の孔121は、チャンバ122を空間から隔てるプレート126全体にわたって接線方向に流れを分散させ、オリフィス124のアレイの幅全体にわたって均一な流れになることを保証する。オリフィス124は、シール部材12のプレート126内に(規則正しい)2次元アレイとして設けられる。これによって、空間内部に平行で均一な流れが生じる。
【選択図】図6
Description
(1)ステップ・モードでは、放射線ビームに与えられたパターン全体を1回でターゲット部分Cに投影しながらマスク・テーブルMTおよび基板テーブルWTが本質的に静止した状態に保たれる(すなわち、ただ1回の静止露光)。次いで、異なるターゲット部分Cを露光することができるように、基板テーブルWTをXおよび/またはY方向に移動させる。ステップ・モードでは、露光フィールドの最大サイズによって1回の静止露光で結像されるターゲット部分Cのサイズが制限される。
(2)走査モードでは、放射線ビームに与えられたパターンをターゲット部分Cに投影しながらマスク・テーブルMTおよび基板テーブルWTが同期して走査される(すなわち、ただ1回の動的露光)。マスク・テーブルMTに対する基板テーブルWTの速度および方向は、投影システムPSの拡大(縮小)率、および像の反転特性によって決定することができる。走査モードでは、露光フィールドの最大サイズによって1回の動的露光におけるターゲット部分の(非走査方向の)幅が制限され、走査移動の長さによってターゲット部分の(走査方向の)高さが決定される。
(3)他のモードでは、マスク・テーブルMTを本質的に静止した状態に保ってプログラム可能なパターン付与デバイスを保持し、放射線ビームに与えられたパターンをターゲット部分Cに投影しながら基板テーブルWTが移動または走査される。このモードでは、一般にパルス式の放射線源が使用され、基板テーブルWTが移動するたびに、または走査中の連続する放射線パルスの合間に、プログラム可能なパターン付与デバイスが必要に応じて更新される。この動作モードは、先に言及したタイプのプログラマブル・ミラー・アレイなど、プログラム可能なパターン付与デバイスを利用したマスクレス・リソグラフィに簡単に適用することができる。
B 放射線ビーム
BD ビーム伝達システム
C、TP ターゲット部分
IF 位置センサ
IL 照明器
M1、M2 マスク・アライメント・マーク
MA パターン付与デバイス、マスク
MT マスク・テーブル、支持体
P1、P2 基板アライメント・マーク
PS 投影システム
PM、PW 位置決めデバイス
RF 基準フレーム
SO 放射線源
W 基板
WT 基板テーブル
IN 入口
OUT 出口
d オリフィスの直径
t 壁の厚さ
11 空間
12 シール部材、バリア部材
80 底面
120、122 チャンバ
121 オリフィス、孔
123 プレート
124 液体入口、オリフィス
126 外側プレート、外壁
128 入口、供給部、入力部
180 液体除去デバイス、液体抽出ユニット、抽出装置
184、324、328 出口
220 障壁
222 オーバーフロー領域、オーバーフロー、溝
223 頂部プレート
224 孔のアレイ、メッシュ、抽出システム
228 抽出装置、出口、ポート
320 陥凹部
322、1248 入口
330 ボリューム
340 隙間
420 ガス・ナイフ
500 浸漬液
1128、1228、1148、1184、1328 弁
1500 リザーバ
2228、2148、2328 低圧源
Claims (1)
- リソグラフィ装置であって、
基板を保持するように構築された基板テーブルと、
パターンが形成された放射線ビームを前記基板のターゲット部分に投影するように構成された投影システムと、
前記投影システムの最終要素と前記基板テーブルの間の空間を取り囲む面を有するバリア部材であって、該バリア部材は前記最終要素と前記基板の間の空間に液体を包含するように構成され、また該バリア部材は、液体を前記空間に供給するように構成された液体入口、および液体を前記空間から除去するように構成された液体出口を有し、前記液体入口および/または前記液体出口は前記面の内周の一部分の周りに延びているバリア部材と
を有するリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/098,615 | 2005-04-05 | ||
US11/098,615 US7411654B2 (en) | 2005-04-05 | 2005-04-05 | Lithographic apparatus and device manufacturing method |
Related Parent Applications (1)
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JP2006102872A Division JP4667290B2 (ja) | 2005-04-05 | 2006-04-04 | リソグラフィ装置およびデバイス製造方法 |
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JP2011066416A true JP2011066416A (ja) | 2011-03-31 |
JP5270631B2 JP5270631B2 (ja) | 2013-08-21 |
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JP2006102872A Active JP4667290B2 (ja) | 2005-04-05 | 2006-04-04 | リソグラフィ装置およびデバイス製造方法 |
JP2009292141A Expired - Fee Related JP5474524B2 (ja) | 2005-04-05 | 2009-12-24 | リソグラフィ装置およびデバイス製造方法 |
JP2010206356A Expired - Fee Related JP5270631B2 (ja) | 2005-04-05 | 2010-09-15 | リソグラフィ装置およびデバイス製造方法 |
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JP2006102872A Active JP4667290B2 (ja) | 2005-04-05 | 2006-04-04 | リソグラフィ装置およびデバイス製造方法 |
JP2009292141A Expired - Fee Related JP5474524B2 (ja) | 2005-04-05 | 2009-12-24 | リソグラフィ装置およびデバイス製造方法 |
Country Status (7)
Country | Link |
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US (8) | US7411654B2 (ja) |
EP (1) | EP1710630A3 (ja) |
JP (3) | JP4667290B2 (ja) |
KR (1) | KR100759065B1 (ja) |
CN (3) | CN101256365B (ja) |
SG (4) | SG147423A1 (ja) |
TW (2) | TWI340303B (ja) |
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