JP2011040732A - 薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 - Google Patents
薄膜トランジスタ、その製造方法及びそれを含む有機電界発光表示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000010408 film Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 15
- 238000002425 crystallisation Methods 0.000 claims description 13
- 230000008025 crystallization Effects 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 59
- 239000000463 material Substances 0.000 description 7
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000004033 plastic Substances 0.000 description 1
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- 239000011241 protective layer Substances 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
【解決手段】薄膜トランジスタは、基板と、上記基板上に位置するバッファ層と、上記バッファ層上に位置する半導体層と、上記半導体層上に直接接触して位置するソース/ドレイン電極と、上記基板全面にわたって位置するゲート絶縁膜と、上記ゲート絶縁膜上に位置し、上記半導体層に対応するように位置するゲート電極と、を含み、上記ソース/ドレイン電極は1つまたは多数のホールを有する。
【選択図】図1I
Description
図1Aないし図1Dは、本発明の一実施形態に係る薄膜トランジスタに関する図である。
そして、前記ソース/ドレイン電極用金属膜130Aは、一般に前記ソース/ドレイン電極130a、130bを形成するための厚さで形成すればよく、好ましくは50〜300nmに形成する。その理由として、50nmよりも薄く形成した場合はソース/ドレイン電極用金属膜130Aが不均一に形成されて熱伝導が均一ではなく不均一な結晶化が起きるからであって、そして、パターニングしてソース/ドレイン電極に形成する際には300nm以下の厚さが電極としての役割に無理がなく、薄膜素子としても適当な厚さであるからである。
110 バッファ層
120 半導体層
120a、120b ソース/ドレイン領域
120c チャンネル領域
130a、130b ソース/ドレイン電極
140 ゲート絶縁膜
150 ゲート電極
Claims (21)
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する半導体層と、
前記半導体層上に直接接触して位置するソース/ドレイン電極と、
前記基板全面にわたって位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、前記半導体層に対応するように位置するゲート電極と、を含み、
前記ソース/ドレイン電極は1つまたは多数のホールを有することを特徴とする薄膜トランジスタ。 - 前記ホールは、前記半導体層のソース/ドレイン領域上に位置することを特徴とする請求項1に記載の薄膜トランジスタ。
- 前記ソース/ドレイン電極が対応する半導体層領域には不純物がドーピングされていることを特徴とする請求項1又は2のいずれかに記載の薄膜トランジスタ、
- 前記ソース/ドレイン電極は、モリブデン(Mo)、クロム(Cr)、タングステン(W)、モリブデンタングステン(MoW)、アルミニウム(Al)、アルミニウム−ネオジム(Al−Nd)、チタン(Ti)、窒化チタン(TiN)、銅(Cu)、モリブデン合金(Mo alloy)、アルミニウム合金(Al alloy)、及び銅合金(Cu alloy)から選択されるいずれか1つを含むことを特徴とする請求項1〜3のいずれか1項に記載の薄膜トランジスタ。
- 前記半導体層は、ジュール熱加熱により形成された多結晶シリコン層であることを特徴とする請求項1〜4のいずれか1項に記載の薄膜トランジスタ。
- 前記ソース/ドレイン電極の厚さは、50〜300nmであることを特徴とする請求項1〜5のいずれか1項に記載の薄膜トランジスタ。
- 基板を提供する工程と、
前記基板上にバッファ層を形成する工程と、
前記バッファ層上に非晶質シリコン層パターンを形成する工程と、
前記基板全面にわたってソース/ドレイン電極用金属膜を形成する工程と、
前記ソース/ドレイン電極用金属膜に電界を印加し、前記非晶質シリコン層パターンを結晶化して半導体層に形成する工程と、
前記ソース/ドレイン電極用金属膜をパターニングし、前記半導体層と接続するソース/ドレイン電極及び前記ソース/ドレイン電極に1つまたは多数のホールを形成する工程と、
前記基板全面にわたってゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に位置し、前記半導体層と対応するゲート電極を形成する工程と、
を含むことを特徴とする薄膜トランジスタの製造方法。 - 前記ホールを形成した後、前記ホールを介して半導体層に不純物をドーピングする工程をさらに含むことを特徴とする請求項7に記載の薄膜トランジスタの製造方法。
- 前記不純物は、N型またはP型不純物であることを特徴とする請求項8に記載の薄膜トランジスタの製造方法。
- 前記結晶化は、前記ソース/ドレイン電極用金属膜に100〜10000V/cmの電界を印加して行うことを特徴とする請求項7〜9のいずれか1項に記載の薄膜トランジスタの製造方法。
- 基板と、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置する半導体層と、
前記半導体層上に直接接触して位置するソース/ドレイン電極と、
前記基板全面にわたって位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置し、前記半導体層に対応するように位置するゲート電極と、
前記基板全面にわたって位置する絶縁膜と、
前記絶縁膜上に位置する前記ソース/ドレイン電極と電気的に接続する第1電極、有機膜及び第2電極と、を含み、
前記ソース/ドレイン電極は1つ以上のホールを含むことを特徴とする有機電界発光表示装置。 - 前記ホールは、前記半導体層のソース/ドレイン領域上に位置することを特徴とする請求項11に記載の有機電界発光表示装置。
- 前記ソース/ドレイン電極に対応する半導体層領域には、不純物がドーピングされていることを特徴とする請求項11または12のいずれかに記載の有機電界発光表示装置。
- 前記ソース/ドレイン電極は、モリブデン(Mo)、クロム(Cr)、タングステン(W)、モリブデンタングステン(MoW)、アルミニウム(Al)、アルミニウム−ネオジム(Al−Nd)、チタン(Ti)、窒化チタン(TiN)、銅(Cu)、モリブデン合金(Mo alloy)、アルミニウム合金(Al alloy)、及び銅合金(Cu alloy)から選択されるいずれか1つを含むことを特徴とする請求項11〜13のいずれか1項に記載の有機電界発光表示装置。
- 前記半導体層は、ジュール熱加熱により形成された多結晶シリコン層であることを特徴とする請求項11〜14のいずれか1項に記載の有機電界発光表示装置。
- 前記ソース/ドレイン電極の厚さは、50〜300nmであることを特徴とする請求項11〜15のいずれか1項に記載の有機電界発光表示装置。
- 基板を提供する工程と、
前記基板上にバッファ層を形成する工程と、
前記バッファ層上に非晶質シリコン層パターンを形成する工程と、
前記基板全面にわたってソース/ドレイン電極用金属膜を形成する工程と、
前記ソース/ドレイン電極用金属膜に電界を印加し、前記非晶質シリコン層パターンを結晶化して半導体層に形成する工程と、
前記ソース/ドレイン電極用金属膜をパターニングし、前記半導体層と接続するソース/ドレイン電極及び前記ソース/ドレイン電極に1つまたは多数のホールを形成する工程と、
前記基板全面にわたってゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に位置し、前記半導体層と対応するゲート電極を形成する工程と、
前記基板全面にわたって絶縁膜を形成する工程と、
前記絶縁膜上に前記ソース/ドレイン電極と電気的に接続する第1電極、有機膜及び第2電極を形成する工程と、
を含むことを特徴とする有機電界発光表示装置の製造方法。 - 前記ホールは、前記半導体層のソース/ドレイン領域上に位置するように形成することを特徴とする請求項17に記載の有機電界発光表示装置の製造方法。
- 前記ホールを介して半導体層に不純物をドーピングする工程をさらに含むことを特徴とする請求項18に記載の有機電界発光表示装置の製造方法。
- 前記不純物は、N型またはP型不純物であることを特徴とする請求項19に記載の有機電界発光表示装置の製造方法。
- 前記結晶化は、前記ソース/ドレイン電極用金属膜に100〜10000V/cmの電界を印加して行うことを特徴とする請求項18〜20のいずれか1項に記載の有機電界発光表示装置の製造方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014087829A1 (ja) * | 2012-12-06 | 2014-06-12 | 富士フイルム株式会社 | 薄膜トランジスタ及びその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101056427B1 (ko) * | 2009-08-13 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 박막트랜지스터의 제조방법 및 그를 포함하는 유기전계발광표시장치의 제조방법 |
KR101255460B1 (ko) * | 2011-09-07 | 2013-04-16 | 호서대학교 산학협력단 | 다결정 실리콘 트랜지스터의 제조 방법 |
KR102591412B1 (ko) | 2016-02-16 | 2023-10-19 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
KR102576999B1 (ko) | 2016-07-05 | 2023-09-12 | 삼성디스플레이 주식회사 | 액정표시장치 |
CN112687714B (zh) * | 2020-12-28 | 2023-07-28 | 上海奕瑞光电子科技股份有限公司 | 平板探测器的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002139744A (ja) * | 2001-07-17 | 2002-05-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法及び表示装置 |
JP2004087682A (ja) * | 2002-08-26 | 2004-03-18 | Chi Mei Electronics Corp | 薄膜トランジスタ、画像表示素子および画像表示装置 |
JP2009130229A (ja) * | 2007-11-27 | 2009-06-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100486718B1 (ko) * | 1998-11-09 | 2005-08-31 | 엘지.필립스 엘시디 주식회사 | 실리콘박막을결정화하는방법과이를이용한박막트랜지스터제조방법 |
JP4403599B2 (ja) * | 1999-04-19 | 2010-01-27 | ソニー株式会社 | 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法 |
KR100721656B1 (ko) * | 2005-11-01 | 2007-05-23 | 주식회사 엘지화학 | 유기 전기 소자 |
US6515428B1 (en) * | 2000-11-24 | 2003-02-04 | Industrial Technology Research Institute | Pixel structure an organic light-emitting diode display device and its manufacturing method |
KR100543717B1 (ko) | 2003-05-27 | 2006-01-23 | 노재상 | 실리콘 박막의 어닐링 방법 및 그로부터 제조된 다결정실리콘 박막 |
KR101006438B1 (ko) * | 2003-11-12 | 2011-01-06 | 삼성전자주식회사 | 액정 표시 장치 |
KR20050049685A (ko) * | 2003-11-22 | 2005-05-27 | 삼성에스디아이 주식회사 | 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 |
KR100611224B1 (ko) * | 2003-11-22 | 2006-08-09 | 삼성에스디아이 주식회사 | 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법 |
KR100611152B1 (ko) * | 2003-11-27 | 2006-08-09 | 삼성에스디아이 주식회사 | 평판표시장치 |
KR100601370B1 (ko) * | 2004-04-28 | 2006-07-13 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그를 이용한 유기 전계 발광 표시 장치 |
KR100659759B1 (ko) * | 2004-10-06 | 2006-12-19 | 삼성에스디아이 주식회사 | 바텀 게이트형 박막트랜지스터, 그를 구비하는평판표시장치 및 박막트랜지스터의 제조방법 |
KR101090257B1 (ko) * | 2005-01-20 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101169079B1 (ko) * | 2005-05-13 | 2012-07-26 | 엘지디스플레이 주식회사 | 유기 박막 트랜지스터 및 그 제조 방법과, 이를 이용한디스플레이 장치 및 그 제조 방법 |
KR101100891B1 (ko) * | 2005-05-23 | 2012-01-02 | 삼성전자주식회사 | 박막트랜지스터 기판 및 이를 포함한 디스플레이장치 |
KR20070002933A (ko) * | 2005-06-30 | 2007-01-05 | 엘지.필립스 엘시디 주식회사 | 폴리 박막 트랜지스터 기판 및 그 제조 방법 |
KR20070002492A (ko) * | 2005-06-30 | 2007-01-05 | 삼성전자주식회사 | 디스플레이장치 및 그 제조방법 |
KR20070039433A (ko) * | 2005-10-08 | 2007-04-12 | 삼성전자주식회사 | 표시장치 |
TWI294192B (en) * | 2006-04-06 | 2008-03-01 | Au Optronics Corp | Method for manufacturing an organic light-emitting display (oled) with black matrix |
KR20080002338A (ko) * | 2006-06-30 | 2008-01-04 | 엘지.필립스 엘시디 주식회사 | 유기 전계발광 표시장치와 그의 제조 방법 |
US20080048191A1 (en) * | 2006-08-23 | 2008-02-28 | Hyun Chul Son | Organic light emitting display device and method of fabricating the same |
JP5305630B2 (ja) * | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
KR20080077846A (ko) * | 2007-02-21 | 2008-08-26 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
JP5138276B2 (ja) * | 2007-05-31 | 2013-02-06 | 株式会社ジャパンディスプレイイースト | 表示装置の製造方法 |
KR100875101B1 (ko) * | 2007-08-08 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 표시장치 및 유기 발광 표시장치의 제조방법 |
KR101432573B1 (ko) * | 2007-12-31 | 2014-08-22 | 엘지디스플레이 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
KR100899428B1 (ko) * | 2008-01-28 | 2009-05-27 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조 방법 |
CN101599495B (zh) * | 2008-06-04 | 2013-01-09 | 清华大学 | 薄膜晶体管面板 |
KR101002665B1 (ko) * | 2008-07-02 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는유기전계발광표시장치 |
KR101002667B1 (ko) * | 2008-07-02 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는유기전계발광표시장치 |
KR101002664B1 (ko) * | 2008-07-02 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는유기전계발광표시장치 |
KR101002666B1 (ko) * | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
US7786481B2 (en) * | 2008-08-26 | 2010-08-31 | Lg Display Co., Ltd. | Organic light emitting diode display and fabricating method thereof |
KR101458902B1 (ko) * | 2008-09-22 | 2014-11-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101041139B1 (ko) * | 2008-11-04 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치 |
KR101034686B1 (ko) * | 2009-01-12 | 2011-05-16 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
JP4752927B2 (ja) * | 2009-02-09 | 2011-08-17 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
KR101293130B1 (ko) * | 2010-05-28 | 2013-08-12 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
KR101784995B1 (ko) * | 2010-10-21 | 2017-10-13 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 그를 포함하는 유기 전계 발광 표시장치 및 그들의 제조방법 |
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- 2009-08-13 KR KR1020090074816A patent/KR101041144B1/ko active IP Right Grant
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- 2010-03-12 US US12/659,550 patent/US8405088B2/en active Active
- 2010-07-15 JP JP2010160794A patent/JP5266282B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002139744A (ja) * | 2001-07-17 | 2002-05-17 | Sanyo Electric Co Ltd | 半導体装置の製造方法及び表示装置 |
JP2004087682A (ja) * | 2002-08-26 | 2004-03-18 | Chi Mei Electronics Corp | 薄膜トランジスタ、画像表示素子および画像表示装置 |
JP2009130229A (ja) * | 2007-11-27 | 2009-06-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014087829A1 (ja) * | 2012-12-06 | 2014-06-12 | 富士フイルム株式会社 | 薄膜トランジスタ及びその製造方法 |
JP2014116372A (ja) * | 2012-12-06 | 2014-06-26 | Fujifilm Corp | 薄膜トランジスタ及びその製造方法、結晶性酸化物半導体薄膜及びその製造方法、表示装置、並びにx線センサ |
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