JP2009532912A - 一体型スルーホール熱放散ピンを有するモールドされた半導体パッケージ - Google Patents
一体型スルーホール熱放散ピンを有するモールドされた半導体パッケージ Download PDFInfo
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 66
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000003754 machining Methods 0.000 claims description 5
- 238000003801 milling Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 2
- 238000002788 crimping Methods 0.000 claims description 2
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- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 13
- 230000008901 benefit Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- SXFLURRQRFKBNN-UHFFFAOYSA-N 1,2,3-trichloro-5-(3-chlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C=C(Cl)C(Cl)=C(Cl)C=2)=C1 SXFLURRQRFKBNN-UHFFFAOYSA-N 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
Description
図面を簡単に分かりやすくするために、図面内の要素の縮尺は必ずしも正確なものでないことを理解されたい。例えば、分かりやすくし、理解しやすくするために、要素の中のあるものの寸法は、他の要素の寸法より誇張してある。さらに、適当であると思われた場合には、図面の対応するまたは類似の要素を表示するために参照番号を反復して使用してある。
Claims (20)
- パッド上に集積回路ダイを装着することにより半導体パッケージを製造するための方法であって、
前記パッドの第1の面上に少なくとも第1の熱放散構造を形成するステップと、
前記パッドの第1の面に対向する第2の面に集積回路ダイを取り付けるステップと、
前記第1の面と第1の熱放散構造を露出した状態で、コンパウンド内に前記集積回路ダイおよびパッドを収容するステップと、
を含む方法。 - 前記第1の熱放散構造をプリント回路基板に取り付けるステップをさらに含む請求項1に記載の方法。
- 第1の熱放散構造を取り付けるステップが、前記熱放散構造を前記プリント回路基板内に形成されているビアを通して挿入するステップを含む請求項2に記載の方法。
- 少なくとも第1の熱放散構造を形成するステップが、前記パッドの一体型部材として第1の熱放散ピンを形成するステップを含む請求項1に記載の方法。
- 前記パッドの一体型部材として第1の熱放散ピンを形成するステップが、リード・フレームのエッチング、フライス加工、打ち抜き、または機械加工を含む請求項4に記載の方法。
- 少なくとも第1の熱放散構造を形成するステップが、前記パッドと一体に複数の熱放散ピンを形成するステップを含む請求項1に記載の方法。
- 少なくとも第1の熱放散構造を形成するステップが、
前記第1の面内に形成されている少なくとも1つの装着孔を有するパッドを形成するステップと、
少なくとも第1の熱放散ピンを形成するステップと、
前記第1の熱放散ピンが前記パッドから突出するように、前記パッドの装着孔内に前記第1の熱放散ピンを取り付けるステップと、を含む請求項1に記載の方法。 - 前記装着孔内に前記第1の熱放散ピンを取り付けるステップが、圧着、冷間溶接または前記第1の熱放散・ピンの挿入を含む請求項7に記載の方法。
- 前記第1の熱放散構造が、銅を含む請求項1に記載の方法。
- プリント回路基板内に形成されているビア内に挿入するように構成されている少なくとも1つのTHT熱放散ピンを有する露出パッドを含むリード・フレーム・ベースのオーバモールドされた半導体パッケージ。
- 前記THT熱放散ピンが、複数の熱放散ピンを含む請求項10に記載の半導体パッケージ。
- 前記THT熱放散ピンが、前記露出パッドの一体型部材として形成される請求項10に記載の半導体パッケージ。
- 前記THT熱放散ピンが、前記露出パッドとは別々に形成され、前記露出パッドに取り付けられる請求項10に記載の半導体パッケージ。
- 前記オーバモールド半導体パッケージが、PQFN、QFN、HSOP、SOIC、QFP、TQFP、またはMO−188パッケージを含む請求項10に記載の半導体パッケージ。
- 前記露出パッドおよびTHT熱放散ピンが銅を含む請求項10に記載の半導体パッケージ。
- パッケージ構造を含む電子デバイスが、
モールド構造と、
前記モールド構造内に配置されるダイと、
前記ダイと結合しているダイ取付パッドであって、前記モールド構造から露出している第1の面、および前記第1の面の第1のスルーホールから突出している熱放散ピンを有するダイ取付パッドと、
を備える電子デバイス。 - 前記モールド構造が第1の面を有し、前記第1のスルーホール技術熱放散ピンおよび前記ダイ取付パッドの前記第1の面が前記モールド構造の前記第1の面から露出する請求項16に記載の電子デバイス。
- 前記ダイ取付パッドの前記熱放散ピンと熱的連通している状態で配置されるヒート・シンクをさらに含む請求項16に記載の電子デバイス。
- 前記第1のスルーホール技術熱放散ピンが、複数の熱放散ピンを含む請求項16に記載の電子デバイス。
- 前記第1のスルーホール技術熱放散ピンが、前記ダイ取付パッドの一体型部材として形成される請求項16に記載の電子デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US11/398,944 US7772036B2 (en) | 2006-04-06 | 2006-04-06 | Lead frame based, over-molded semiconductor package with integrated through hole technology (THT) heat spreader pin(s) and associated method of manufacturing |
PCT/US2007/063777 WO2007117819A2 (en) | 2006-04-06 | 2007-03-12 | Molded semiconductor package with integrated through hole heat spreader pin(s) |
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JP2013164657A Division JP2014013908A (ja) | 2006-04-06 | 2013-08-08 | 一体型スルーホール熱放散ピンを有するモールドされた半導体パッケージおよびその製造方法 |
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JP2013164657A Pending JP2014013908A (ja) | 2006-04-06 | 2013-08-08 | 一体型スルーホール熱放散ピンを有するモールドされた半導体パッケージおよびその製造方法 |
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US (2) | US7772036B2 (ja) |
EP (1) | EP2005470B1 (ja) |
JP (2) | JP2009532912A (ja) |
KR (1) | KR101388328B1 (ja) |
CN (1) | CN101416305B (ja) |
WO (1) | WO2007117819A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011040507A (ja) * | 2009-08-07 | 2011-02-24 | Sumitomo Wiring Syst Ltd | 回路装置 |
WO2018092185A1 (ja) * | 2016-11-15 | 2018-05-24 | 三菱電機株式会社 | 半導体モジュール及び半導体装置 |
WO2020262957A1 (ko) * | 2019-06-24 | 2020-12-30 | 안상정 | 반도체 발광소자용 지지 기판을 제조하는 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US9029991B2 (en) * | 2010-11-16 | 2015-05-12 | Conexant Systems, Inc. | Semiconductor packages with reduced solder voiding |
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Also Published As
Publication number | Publication date |
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US8659146B2 (en) | 2014-02-25 |
KR20090004908A (ko) | 2009-01-12 |
WO2007117819A2 (en) | 2007-10-18 |
US20070238205A1 (en) | 2007-10-11 |
KR101388328B1 (ko) | 2014-04-22 |
EP2005470A2 (en) | 2008-12-24 |
US20100237479A1 (en) | 2010-09-23 |
JP2014013908A (ja) | 2014-01-23 |
WO2007117819A3 (en) | 2008-01-17 |
EP2005470B1 (en) | 2019-12-18 |
CN101416305B (zh) | 2010-09-29 |
US7772036B2 (en) | 2010-08-10 |
CN101416305A (zh) | 2009-04-22 |
EP2005470A4 (en) | 2010-12-22 |
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