JP2009503874A - プログラマブルゲートを備える常時オフiii族窒化物半導体デバイス - Google Patents
プログラマブルゲートを備える常時オフiii族窒化物半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 79
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 46
- 239000012212 insulator Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims description 16
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000002161 passivation Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- -1 but not limited to Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
【選択図】 図2
Description
および上記の任意の組み合わせ。
8 緩和部
10 第1III族窒化物半導体部
12 第2III族窒化物半導体部
14 2次元電子ガス
16 第1電源電極
18 第2電源電極
20 ゲート構造
22 第1絶縁体部
24 第2絶縁体部
26 ゲート電極
27 パッシベーション層
28 リセス
30 リセス
Claims (22)
- あるバンドギャップを有する第1III族窒化物半導体部と、
2次元電子ガスを形成するために、前記第1III族窒化物半導体部の上にある、別のバンドギャップを有する第2III族窒化物半導体部と、
前記第2III族窒化物半導体部と結合される第1電源電極と、
前記第2III族窒化物半導体部と結合される第2電源電極と、
前記第2III族窒化物半導体部の上にある、捕獲電荷を有するゲート絶縁体部と、
前記ゲート絶縁体部の上に配置されるゲート電極、
とを備える半導体デバイス。 - 前記第1III族窒化物半導体部は、InAlGaN系の或る半導体合金から成り、前記第2III族窒化物半導体部は、InAlGaN系の別の半導体合金から成る請求項1に記載の半導体デバイス。
- 前記第1III族窒化物半導体部は、GaNから成り、前記第2III族窒化物半導体部は、AlGaNから成る請求項1に記載の半導体デバイス。
- 前記ゲート絶縁体部は、別の異なる絶縁体部に隣接して配置された少なくとも1つのゲート絶縁体部から成る請求項1に記載の半導体デバイス。
- 前記1つのゲート絶縁体部は、窒化シリコンから成り、前記別のゲート絶縁体部は、2酸化シリコンから成る請求項4に記載の半導体デバイス。
- 前記ゲート絶縁体部は、交互に配置された第1および第2絶縁体部から成る請求項1に記載の半導体デバイス。
- 前記第1絶縁体部は、窒化シリコンから成り、前記第2絶縁体部は、2酸化シリコンから成る請求項6に記載の半導体デバイス。
- 前記電荷は、前記2次元電子ガスを遮断する請求項1に記載の半導体デバイス。
- 基板をさらに備える請求項1に記載の半導体デバイス。
- 前記基板は、シリコンから成る請求項9に記載の半導体デバイス。
- 前記基板は、炭化シリコンから成る請求項9に記載の半導体デバイス。
- 前記基板は、サファイアから成る請求項9に記載の半導体デバイス。
- 個別電力デバイスである請求項1に記載の半導体デバイス。
- 集積回路である請求項1に記載の半導体デバイス。
- 前記絶縁体部が負に帯電される請求項1に記載の半導体デバイス。
- 半導体デバイスを製造する方法であって、
或るバンドギャップを有する或るIII族窒化物半導体部を、別のバンドギャップの別のIII族窒化物半導体部の上に堆積して、2次元電子ガスを得る工程と、
第1および第2電源電極を、前記第2III族窒化物半導体部と結合する工程と、
帯電ゲート絶縁体部を、前記第2III族窒化物半導体部の上に形成する工程と、
ゲート電極を、前記帯電ゲート絶縁体部の上に形成する工程、
とを含む方法。 - 前記ゲート絶縁体部を、負に帯電する請求項16に記載の方法。
- 前記ゲート絶縁体部は、或る絶縁体部を別の絶縁体部の上に形成し、かつバイアスを前記ゲート電極に印加することによって形成される請求項16に記載の方法。
- 前記ゲート絶縁体部は、或る帯電絶縁体部と、前記或る絶縁体部に隣接する別の絶縁体部とを形成し、かつ前記ゲート絶縁体部を加熱することによって形成される請求項16に記載の方法。
- 前記ゲート絶縁体部は、或る帯電絶縁体部と、前記或る絶縁体部に隣接する別の絶縁体部とを形成し、かつドーパントを前記絶縁体部の少なくとも1つに注入することによって形成される請求項16に記載の方法。
- 前記ドーパントは、フッ素、臭素、ヨウ素、および塩素から成る群から選択される請求項20に記載の方法。
- 前記ゲート絶縁体部の電荷は、前記2次元電子ガスを遮断する請求項16に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70393105P | 2005-07-29 | 2005-07-29 | |
US60/703,931 | 2005-07-29 | ||
US11/460,725 | 2006-07-28 | ||
US11/460,725 US8183595B2 (en) | 2005-07-29 | 2006-07-28 | Normally off III-nitride semiconductor device having a programmable gate |
PCT/US2006/029709 WO2007016477A2 (en) | 2005-07-29 | 2006-07-31 | Normally off iii-nitride semiconductor device having a programmable gate |
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JP2012124438A (ja) * | 2010-12-10 | 2012-06-28 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
US9130028B2 (en) | 2011-08-23 | 2015-09-08 | Visic Technologies Ltd. | Field effect power transistors |
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US20130256694A1 (en) | 2013-10-03 |
TW200709297A (en) | 2007-03-01 |
DE112006001893T5 (de) | 2008-05-15 |
US8729644B2 (en) | 2014-05-20 |
WO2007016477A3 (en) | 2007-12-27 |
KR101127904B1 (ko) | 2012-03-21 |
US8084785B2 (en) | 2011-12-27 |
KR20080015951A (ko) | 2008-02-20 |
WO2007016477A2 (en) | 2007-02-08 |
TWI315892B (en) | 2009-10-11 |
US20120091470A1 (en) | 2012-04-19 |
US9236462B2 (en) | 2016-01-12 |
US20070026587A1 (en) | 2007-02-01 |
DE112006001893B4 (de) | 2018-07-26 |
JP5202313B2 (ja) | 2013-06-05 |
US8455922B2 (en) | 2013-06-04 |
US20080087917A1 (en) | 2008-04-17 |
US8183595B2 (en) | 2012-05-22 |
US20120223327A1 (en) | 2012-09-06 |
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