JP2009158816A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2009158816A
JP2009158816A JP2007337445A JP2007337445A JP2009158816A JP 2009158816 A JP2009158816 A JP 2009158816A JP 2007337445 A JP2007337445 A JP 2007337445A JP 2007337445 A JP2007337445 A JP 2007337445A JP 2009158816 A JP2009158816 A JP 2009158816A
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Japan
Prior art keywords
metal
region
insulating substrate
semiconductor device
porous
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JP2007337445A
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English (en)
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JP5140411B2 (ja
Inventor
Keiki Okumura
啓樹 奥村
Takuichi Otsuka
拓一 大塚
Masao Saito
匡男 済藤
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2007337445A priority Critical patent/JP5140411B2/ja
Priority to US12/342,161 priority patent/US20090166893A1/en
Publication of JP2009158816A publication Critical patent/JP2009158816A/ja
Application granted granted Critical
Publication of JP5140411B2 publication Critical patent/JP5140411B2/ja
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Abstract

【課題】 電気伝導性及び熱伝導性が向上し、軽量化が可能となる半導体装置を提供する。
【解決手段】 本発明による半導体装置１０は、絶縁性基板３と、絶縁性基板３上に、内部に複数の気孔７を有する多孔質領域２ａと金属領域２ｂを絶縁性基板３の平面方向に隣接して、配置した金属接合部材２と、気孔７に含浸された半田材８と、金属接合部材２の多孔質領域２ａの表面に配置された半導体素子１と、金属接合部材２の金属領域２ｂの表面に接続されたボンディングワイヤ６とを備えている。
【選択図】図１

Description

本発明は、半導体装置に関し、特に、電気伝導性及び熱伝導性の向上した半導体装置に関する。
従来、半導体パワーモジュールの製造プロセスにおいて、基板と半導体チップを接合する際に、半田を用いることがよく知られている。
図４に、従来の半導体パワーモジュールの構造の一例を示す。従来の半導体パワーモジュールは、絶縁性基板３の表面及び裏面に金属等の導電性部材４、５が配置されており、一方の導電性部材５と半導体素子１が半田２０で接合されている。一方の導電性部材５にはボンディングワイヤ６が接続され、このボンディングワイヤ６及び導電性部材４、５を介して半導体素子１への通電がなされる構成を有する。
しかし、通常の半田による接合では、半導体素子１への通電と停止を繰り返す際に熱サイクルが生じ、半田２０と絶縁性基板３や半導体素子１との熱膨張係数の違いによりひずみが生じる。このことが原因でクラックが発生するおそれがあるという問題があった。
この問題の解決のために、半田で接合する代わりに、三次元網状で多孔質の金属に半田を含有させた半田接合材を介して接合することにより、ひずみの発生を低減することが開示されている（例えば、特許文献１参照。）。
特開２００４−２９８９６２号公報
しかしながら、上記従来の技術においては、パワーモジュールにおけるワイヤボンディングの使用を考慮した場合、導電性部材にワイヤを接続する構造では、導電性部材を介して通電し、また除熱をすることになるため、電気伝導性及び熱伝導性を向上させることが困難であるといった問題があった。
本発明の目的は、電気伝導性及び熱伝導性が向上し、軽量化が可能となる半導体装置を提供することにある。
上記目的を達成するための本発明の一態様によれば、絶縁性基板と、前記絶縁性基板上に、内部に複数の気孔を有する多孔質領域と金属領域を前記絶縁性基板の平面方向に隣接して、配置した金属接合部材と、前記気孔に含浸された半田材と、前記多孔質領域の表面に配置された半導体素子と、前記金属接合部材の金属領域の表面に接続されたボンディングワイヤとを備えたことを特徴とする半導体装置が提供される。
本発明の半導体装置によれば、電気伝導性及び熱伝導性が向上し、軽量化が可能となる半導体装置を提供することができる。
以下、図面を参照して本発明の実施の形態による半導体装置を説明する。以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。ただし、図面は模式的なものであり、現実のものとは異なり、また、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることに留意すべきである。
[第１の実施の形態]
（半導体装置の構造）
本発明の第１の実施の形態に係る半導体装置としての半導体パワーモジュールについて、図１及び図２を参照して説明する。
図１に示すように、第１の実施の形態の半導体パワーモジュールは、絶縁性基板３と、絶縁性基板３上に、内部に複数の気孔７を有する多孔質領域２ａと金属領域２ｂを絶縁性基板３の平面方向に隣接して、配置した金属接合部材２と、気孔７に含浸された半田材８と、金属接合部材２の多孔質領域２ａの表面に配置された半導体素子１と、金属接合部材２の金属領域２ｂの表面に接続されたボンディングワイヤ６とを備えている。
半導体素子１は、例えばＩＧＢＴ（Insulated Gate Bipolar Transistor）であり、一方の面側にエミッタ電極とゲート電極が形成されており、他方の面側にはコレクタ電極が形成されている。コレクタ電極は絶縁性基板３側に金属接合部材２の多孔質領域２ａと接合され、エミッタ電極及びゲート電極は外部接続端子等と接続されている。
絶縁性基板３は、伝熱性の良いアルミナ等のセラミックスで構成され、上述したように絶縁性基板３の表面には半導体素子１のコレクタ電極が金属接合部材２を介して接合されている。絶縁性基板３の裏面には配線用導体パターン等を構成する導電性部材４が配置されていてもよい。更に、導電性部材４の下に、例えば銅等からなる放熱部材を配置してもよい。
金属接合部材２は金属からなり、内部に、複数の気孔７を有する多孔質領域２ａと金属部分のみからなる金属領域２ｂが絶縁性基板３の平面方向に隣接して配置されている。金属接合部材２の厚みは、０．１〜２．０ｍｍ程度、好ましくは０．２〜１．０ｍｍ程度である。
多孔質領域２ａは、半導体素子１と接合する表面を含む金属接合部材２の領域に配置され、金属領域２ｂは、半導体素子１と接合しない表面を含む金属接合部材２の領域に配置される。
多孔質領域２ａの気孔７は互いに繋がっており、開気孔の構造を有している。気孔７の平均直径は、１〜１０００μｍ程度、好ましくは１００〜５００μｍ程度である。気孔率は、７０〜９５％程度、好ましくは８０〜９０％程度である。
なお、気孔率は、体積と重量の測定から得られる嵩密度ρ１と、金属の真密度ρ０とから次式、気孔率（％）＝{１−（ρ１／ρ０）}×１００、により算出された値をいう。
金属接合部材２の材質としては、導電性と十分な強度とを有する金属であれば、特に限定されないが、例えば銅、アルミニウム、ニッケル等からなるのがよい。
半田材８は、気孔７に含浸されている。半田材８の材質としては、鉛−錫系、錫−亜鉛系、錫−インジウム系、錫−銀−銅系等の半田を挙げることができる。
ボンディングワイヤ６は、半導体素子１のコレクタ電極に通電するための導電性部材であり、金属接合部材２の気孔率の低い領域２ｂの表面に接続されている。ボンディングワイヤ６の材質としては、銅、アルミニウム、金等の金属が挙げられる。
（動作原理)
本発明の第１の実施の形態に係る半導体装置の動作原理は以下の通りである。
半導体装置１０は、半導体素子１のエミッタ電極及びゲート電極に接続された外部接続端子と、コレクタ電極に金属接合部材２を介して接続されたボンディングワイヤ６とに電圧が印加され、エミッタ電極、ゲート電極及びコレクタ電極に印加される電圧を制御することにより、半導体素子１が作動する。
（製造方法）
図２は、本発明の第１の実施の形態による半導体装置の製造方法を説明する図である。
本発明の第１の実施の形態に係る半導体装置の製造方法は、複数の気孔７を有する多孔質金属シート２ｃを形成する工程と、多孔質金属シート２ｃの一方の端面に、金属シート２ｄの一方の端面を溶接により接合して、多孔質領域２ａと金属領域２ｂを有する金属接合部材２を形成する工程と、半田材８を金属接合部材２の気孔７に含浸させる工程と、絶縁性基板３上に金属接合部材２を形成し、半田材８を絶縁性基板３の表面に接合させる工程と、半導体素子１を金属接合部材２の多孔質領域２ａの表面に形成する工程と、金属接合部材２の金属領域２ｂの表面にワイヤボンディングする工程とを有する。
以下に、製造工程を詳述する。
（ａ）まず、図２（ａ）に示すように、本発明の第１の実施の形態で用いられる複数の気孔７を有する多孔質金属シート２ｃは、以下のようにして作製することができる。
まず、銅等からなる金属の粉末を非水溶性有機溶剤からなる発泡剤を含む樹脂結合材に分散させたスラリーを調整する。
このスラリーをシート状に形成した後、分散して閉じ込められていた非水溶性有機溶剤を蒸発させる。蒸発の際、体積膨張により気孔７が多数形成され、多孔質成形体が得られる。
この多孔質成形体を乾燥した後、還元雰囲気中で焼成することにより多孔質金属シート２ｃを得ることができる。樹脂結合材等の樹脂は脱脂により除去する。
なお、気孔率は、多孔質金属シート２ｃを焼成する前に加圧及び加熱をすることにより制御することができる。
（ｂ）次に、図２（ｂ）に示すように、多孔質金属シート２ｃの一方の端面と銅等の金属からなる金属シート２ｄの端面とを溶接等により接合し、多孔質領域２ａと金属領域２ｂを有する金属接合部材２を形成する。
（ｃ）次に、図２（ｃ）に示すように、例えば、錫−インジウムからなる半田材８を金属接合部材２の多孔質領域２ａに形成されている気孔７に含浸させる。
（ｄ）次に、図２（ｄ）に示すように、アルミナ等からなる絶縁性基板３の裏面にスパッタリング等により銅等からなる導電性部材４を形成する。
この絶縁性基板３の表面に金属接合部材２を形成し、半田材８の酸化膜形成を防ぐために、例えばギ酸等の還元雰囲気中で、半田材８を絶縁性基板３の表面に接合させることにより、金属接合部材２と絶縁性基板３とを接合する。
（ｅ）次に、図２（ｅ）に示すように、半導体素子１を金属接合部材２の多孔質領域２ａの表面に形成する。
（ｆ）最後に、金属接合部材２の金属領域２ｂの表面にワイヤボンディングして、図１に示す半導体装置１０が完成する。
このような半導体装置１０は、金属接合部材２が多孔質領域２ａと金属領域２ｂ間で金属材により電気的に接続しているため、金属接合部材２の金属領域２ｂ、つまり半田材８を含有しない金属領域にワイヤボンディングすることにより、従来のように導電性部材及び半田を介してワイヤボンディングする必要がなくなり、電気伝導性を向上させることが可能となる。
また、金属接合部材２が絶縁性基板３に直接接合しているので、半田材８からの伝熱に加えて、金属接合部材２の金属材からも絶縁性基板３に伝熱するため、半導体素子１への通電等により発生する熱を効率よく絶縁性基板３側に放熱することができる。
また、従来のように半田接合材と絶縁性基板間に導電性部材を配置しないので、半導体装置の軽量化が可能となる。
本発明の第１の実施の形態に係る半導体装置によれば、電気伝導性及び熱伝導性が向上し、軽量化が可能となる。
[第２の実施の形態]
本発明の第２の実施の形態に係る半導体装置について、図３を参照して説明する。なお、第２の実施の形態において、第１の実施の形態と同一の部分については、同一の参照符号を付して、重複した説明は省略する。
本発明の第２の実施の形態に係る半導体装置は、図３に示すように、絶縁性基板３と金属接合部材２間に導電性部材５を更に備える。その他の構成は、第１の実施の形態と同様であるので説明は省略する。
導電性部材５は、絶縁性基板３と金属接合部材２間に配置され、金属接合部材２の半田材８との接合により金属接合部材２と接合される。
導電性部材５の材質としては、導電性を有するものであれば、特に限定されないが、銅、アルミニウム、ニッケル等の金属が挙げられる。
第２の実施の形態に係る半導体装置の製造方法は、導電性部材５を形成する方法が第１の実施の形態における製造方法と異なる点であり、他は第１の実施の形態と同様であるので、重複した説明は省略する。
第２の実施の形態に係る半導体装置の製造方法において、導電性部材５を絶縁性基板３の表面にスパッタリング等により形成することにより、半導体装置１０Ａを製造することができる。
導電性部材５は、金属接合部材２の半田材８と接合するので、半田が金属からなる導電性部材５と接合しやすくなり、導電性部材５と金属接合部材２とを良好に接合することができる。
本発明の第２の実施の形態に係る半導体装置によれば、電気伝導性及び熱伝導性が向上し、軽量化が可能となる。
[第３の実施の形態]
本発明の第３の実施の形態に係る半導体装置について、図１を参照して説明する。なお、第３の実施の形態において、第１の実施の形態と同一の部分については、同一の参照符号を付して、重複した説明は省略する。
本発明の第３の実施の形態に係る半導体装置は、図１に示す金属接合部材２の金属領域２ｂが、多孔質領域２ａの気孔率に比べて小さい気孔率を有する。その他の構成は、第１の実施の形態と同様であるので説明は省略する。
第３の実施の形態に係る半導体装置において、金属接合部材２の金属領域２ｂは、気孔率が１〜１０％程度、好ましくは１〜５％程度であるのがよい。
第３の実施の形態に係る半導体装置の製造方法は、金属接合部材２を形成する方法が第１の実施の形態における製造方法と異なる点であり、他は第１の実施の形態と同様であるので、重複した説明は省略する。
第３の実施の形態に係る半導体装置の製造方法において、第１の実施の形態に係る半導体装置の製造方法と同様にして得られる多孔質金属シート２ｃを、焼成する前にボンディングワイヤ６を接続する領域に対して、ホットプレス等により加圧及び加熱をする。これにより、加圧しない部分に多孔質領域２ａが形成され、加圧した部分に多孔質領域２ａの気孔率よりも小さな気孔率を有する金属領域２ｂが形成された金属接合部材２を形成することができる。
本発明の第３の実施の形態に係る半導体装置によれば、電気伝導性及び熱伝導性が向上し、軽量化が可能となる。
[その他の実施の形態]
以上、上述した第１乃至第３の実施の形態によって本発明を詳細に説明したが、当業者にとっては、本発明が本明細書中に説明した第１乃至第３の実施の形態に限定されるものではないということは明らかである。本発明は、特許請求の範囲の記載により定まる本発明の趣旨及び範囲を逸脱することなく修正及び変更形態として実施することができる。従って、本明細書の記載は、例示説明を目的とするものであり、本発明に対して何ら制限的な意味を有するものではない。以下、上述した第１乃至第３の実施の形態を一部変更した変更形態について説明する。
例えば、半導体装置を構成する各材料を変更することは可能である。
上述した第１の実施の形態に係る半導体装置において、半導体素子１としてＩＧＢＴを用いた説明をしたが、パワーＭＯＳＦＥＴ（Metal Oxide Semiconductor Field Effect Transistor）、ダイオード及びサイリスタであってもよい。
本発明の第１の実施の形態に係る半導体装置の模式的断面構造図。 本発明の第１の実施の形態に係る半導体装置の製造方法の説明図であって、（ａ）複数の気孔７を有する多孔質金属シート２ｃを形成する工程図、（ｂ）多孔質金属シート２ｃと金属シート２ｄとを接合する工程図、（ｃ）金属接合部材２を形成する工程図、（ｄ）金属接合部材２を絶縁性基板３上に形成する工程図、（ｅ）半導体素子１を金属接合部材２上に形成する工程図。 本発明の第２の実施の形態に係る半導体装置の模式的断面構造図。 従来の半導体装置の模式的断面構造図。
符号の説明
１・・・半導体素子
２・・・金属接合部材
３・・・絶縁性基板
４、５・・・導電性部材
６・・・ボンディングワイヤ
７・・・気孔
８・・・半田材
１０・・・半導体装置

Claims (3)

  1. 絶縁性基板と、
    前記絶縁性基板上に、内部に複数の気孔を有する多孔質領域と金属領域を前記絶縁性基板の平面方向に隣接して、配置した金属接合部材と、
    前記気孔に含浸された半田材と、
    前記金属接合部材の多孔質領域の表面に配置された半導体素子と、
    前記金属接合部材の金属領域の表面に接続されたボンディングワイヤと
    を備えたことを特徴とする半導体装置。
  2. 前記金属領域は、前記多孔質領域の気孔率に比べて小さい気孔率を有することを特徴とする請求項１に記載の半導体装置。
  3. 前記絶縁性基板と前記金属接合部材間に導電性部材を更に備えたことを特徴とする請求項１又は２に記載の半導体装置。
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JP2012174927A (ja) * 2011-02-22 2012-09-10 Fujitsu Ltd 半導体装置及びその製造方法
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CN115662966A (zh) * 2022-10-27 2023-01-31 大连理工大学 一种功率电子器件高效散热的界面连接结构及制备方法

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