JP2009158816A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009158816A JP2009158816A JP2007337445A JP2007337445A JP2009158816A JP 2009158816 A JP2009158816 A JP 2009158816A JP 2007337445 A JP2007337445 A JP 2007337445A JP 2007337445 A JP2007337445 A JP 2007337445A JP 2009158816 A JP2009158816 A JP 2009158816A
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- metal
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- insulating substrate
- semiconductor device
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Abstract
【解決手段】 本発明による半導体装置10は、絶縁性基板3と、絶縁性基板3上に、内部に複数の気孔7を有する多孔質領域2aと金属領域2bを絶縁性基板3の平面方向に隣接して、配置した金属接合部材2と、気孔7に含浸された半田材8と、金属接合部材2の多孔質領域2aの表面に配置された半導体素子1と、金属接合部材2の金属領域2bの表面に接続されたボンディングワイヤ6とを備えている。
【選択図】図1
Description
(半導体装置の構造)
本発明の第1の実施の形態に係る半導体装置としての半導体パワーモジュールについて、図1及び図2を参照して説明する。
本発明の第1の実施の形態に係る半導体装置の動作原理は以下の通りである。
図2は、本発明の第1の実施の形態による半導体装置の製造方法を説明する図である。
本発明の第2の実施の形態に係る半導体装置について、図3を参照して説明する。なお、第2の実施の形態において、第1の実施の形態と同一の部分については、同一の参照符号を付して、重複した説明は省略する。
本発明の第3の実施の形態に係る半導体装置について、図1を参照して説明する。なお、第3の実施の形態において、第1の実施の形態と同一の部分については、同一の参照符号を付して、重複した説明は省略する。
以上、上述した第1乃至第3の実施の形態によって本発明を詳細に説明したが、当業者にとっては、本発明が本明細書中に説明した第1乃至第3の実施の形態に限定されるものではないということは明らかである。本発明は、特許請求の範囲の記載により定まる本発明の趣旨及び範囲を逸脱することなく修正及び変更形態として実施することができる。従って、本明細書の記載は、例示説明を目的とするものであり、本発明に対して何ら制限的な意味を有するものではない。以下、上述した第1乃至第3の実施の形態を一部変更した変更形態について説明する。
2・・・金属接合部材
3・・・絶縁性基板
4、5・・・導電性部材
6・・・ボンディングワイヤ
7・・・気孔
8・・・半田材
10・・・半導体装置
Claims (3)
- 絶縁性基板と、
前記絶縁性基板上に、内部に複数の気孔を有する多孔質領域と金属領域を前記絶縁性基板の平面方向に隣接して、配置した金属接合部材と、
前記気孔に含浸された半田材と、
前記金属接合部材の多孔質領域の表面に配置された半導体素子と、
前記金属接合部材の金属領域の表面に接続されたボンディングワイヤと
を備えたことを特徴とする半導体装置。 - 前記金属領域は、前記多孔質領域の気孔率に比べて小さい気孔率を有することを特徴とする請求項1に記載の半導体装置。
- 前記絶縁性基板と前記金属接合部材間に導電性部材を更に備えたことを特徴とする請求項1又は2に記載の半導体装置。
Priority Applications (2)
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JP2007337445A JP5140411B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体装置 |
US12/342,161 US20090166893A1 (en) | 2007-12-27 | 2008-12-23 | Semiconductor device |
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JP2007337445A JP5140411B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体装置 |
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JP (1) | JP5140411B2 (ja) |
Cited By (2)
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WO2012081167A1 (ja) * | 2010-12-15 | 2012-06-21 | 日立オートモティブシステムズ株式会社 | 半導体装置及びその製造方法 |
JP2013135054A (ja) * | 2011-12-26 | 2013-07-08 | Kyocera Corp | 回路基板およびこれを備える電子装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5700504B2 (ja) * | 2010-08-05 | 2015-04-15 | 株式会社デンソー | 半導体装置接合材 |
JP2012174927A (ja) * | 2011-02-22 | 2012-09-10 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP5882069B2 (ja) * | 2011-03-29 | 2016-03-09 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置及びその製造方法 |
CN115662966A (zh) * | 2022-10-27 | 2023-01-31 | 大连理工大学 | 一种功率电子器件高效散热的界面连接结构及制备方法 |
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JPH09321187A (ja) * | 1996-05-27 | 1997-12-12 | Mitsubishi Electric Corp | 混成集積回路の製造方法およびその構造 |
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2007
- 2007-12-27 JP JP2007337445A patent/JP5140411B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-23 US US12/342,161 patent/US20090166893A1/en not_active Abandoned
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JPS55107263A (en) * | 1979-02-12 | 1980-08-16 | Mitsubishi Electric Corp | Semiconductor device |
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JP2008311273A (ja) * | 2007-06-12 | 2008-12-25 | Mitsubishi Electric Corp | 接合体および電子モジュールならびに接合方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012081167A1 (ja) * | 2010-12-15 | 2012-06-21 | 日立オートモティブシステムズ株式会社 | 半導体装置及びその製造方法 |
JP2013135054A (ja) * | 2011-12-26 | 2013-07-08 | Kyocera Corp | 回路基板およびこれを備える電子装置 |
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