CN107431058A - 芯片装置和用于构成接触连接部的方法 - Google Patents

芯片装置和用于构成接触连接部的方法 Download PDF

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Publication number
CN107431058A
CN107431058A CN201680015610.6A CN201680015610A CN107431058A CN 107431058 A CN107431058 A CN 107431058A CN 201680015610 A CN201680015610 A CN 201680015610A CN 107431058 A CN107431058 A CN 107431058A
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Prior art keywords
chip
contact
silver paste
conductor material
conductor
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海因里希·吕德克
里卡多·格尔哈尔
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Pac Tech Packaging Technologies GmbH
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Pac Tech Packaging Technologies GmbH
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Publication of CN107431058A publication Critical patent/CN107431058A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract

本发明涉及一种芯片装置(10)以及一种用于在芯片(18)和导体材料带(14)之间构成接触连接部(11)的方法，所述芯片尤其是功率晶体管等，其中导体材料带在不导电的衬底(12)上构成，其中芯片设置在衬底或导体材料带(15)上，其中分别在芯片的芯片接触面(25)和导体材料带(28)上施加银膏(29)或者铜膏，其中接触导体(30)浸入到芯片接触面上的银膏或铜膏中并且浸入到导体材料带上的银膏或铜膏中，其中包含在银膏或铜膏中的溶剂通过加热至少部分地蒸发，其中接触连接部通过如下方式构成：银膏或铜膏借助于激光能量烧结。

Description

芯片装置和用于构成接触连接部的方法
技术领域
本发明涉及一种芯片装置以及一种用于构成在芯片、尤其功率晶体管等和导体材料带之间的接触连接部的方法，其中导体材料带在不导电的衬底上构成，并且其中芯片设置在衬底或者导体材料带上。
背景技术
从现有技术中已知的芯片能够构成有壳体或者构成为无壳体的半导体器件。这些芯片因此通常也称为“单片die”、“裸片bare die”或者“裸芯片bare chip”。这种芯片在没有壳体的情况下被继续加工并且直接施加在衬底或导体板上。在此，芯片的芯片接触面能够直接与导体材料带接触。芯片的其它芯片接触面能够经由接触导体或所谓的键合线与其它的导体材料带接触。这种接触连接部通常也在功率晶体管上构成。在此，例如，功率晶体管或芯片通过下部的芯片接触面设置在导体材料带上并且与该导体材料带基本上整面地接触。芯片的与被接触的下部的芯片接触面相对置的上部的芯片接触面经由多条键合线通过例如超声键合或者焊接与同该芯片相邻地伸展的另一导体材料带材料连接。通过这种芯片装置保证：提供足够大的导体横截面来传输高的电流。对于这种应用情况而言也能够使用相对厚的、由铝构成的键合线。
特别地，在功率晶体管、如MOSFET、IGBT和用于功率模块的二极管中，出现高的热负荷和电负荷，例如在15KW至150KW的功率范围中的热负荷和电负荷。这些负荷能够轻易地导致接触连接部或芯片装置的构件失效。此外，在例如车辆或者风能设备中使用芯片装置会由于强烈的温度波动而还进一步缩短芯片装置的使用寿命。因此，会因这种负荷造成接触连接部断裂或脱离。此外，接触导体与导体材料带材料或芯片接触面的焊接连接部仅可被加热到最大175°的温度，而不使接触连接部受到持久的损伤。此外，制造这种芯片装置是相对耗费成本的，因为必须在芯片接触面和导体材料带之间设置多个接触导体以传输高的电流。
发明内容
因此本发明基于下述目的，提出一种具有接触连接部的芯片装置以及一种用于构成接触连接部的方法，在所述芯片装置或所述方法中接触连接部在简化制造的同时具有改进的耐久性。
该目的通过具有权利要求1的特征的用于构成接触连接部的方法实现并且通过具有权利要求14的特征的芯片装置实现。
在根据本发明的、用于在芯片、尤其功率晶体管等和导体材料带之间构成接触连接部的方法中，导体材料带在不导电的衬底上构成，其中芯片设置在衬底或者导体材料带上，其中分别在芯片的芯片接触面和导体材料带上施加银膏或者铜膏，其中接触导体浸入到芯片接触面上的银膏或铜膏中并且浸入到导体材料带上的银膏或铜膏中，其中包含在银膏或者铜膏中的溶剂通过加热至少部分地蒸发，其中接触连接部通过如下方式构成：银膏或铜膏借助于激光能量烧结。
衬底能够由塑料材料或者陶瓷材料构成，其中首先在衬底上构成导体材料带以连接电子器件或半导体器件。这能够通过从现有技术中众所周知的方法来进行。芯片接下来直接设置在不导电的衬底或者导体材料带上。当芯片设置在导体材料带上时，所述芯片与该导体材料带电接触。在芯片的背离衬底或导体材料带的上侧上，构成有至少一个上部的芯片接触面以接触芯片。通过构成接触连接部，芯片接触面此时借助于接触导体与铜芯片相邻的导体材料带或另一导体材料带连接。为此，首先在同芯片相邻的导体材料带上施加液态的或者膏状的银膏或铜膏。在上部的芯片接触面上也施加膏或者金属膏。施加膏能够自动地借助于施加器(Applikator)进行。此后，接触导体分别浸入到芯片接触面上的膏中并且浸入到导体材料带上的膏中，分别使得接触导体至少部分地由膏围绕。在银膏或铜膏中包含溶剂，所述溶剂通过加热至少部分地蒸发，这能够引起所施加的膏体积减小。根据加热的类型，溶剂能够通过汽化或者沸腾来蒸发。随后构成接触连接部通过借助激光能量或激光烧结对银膏或铜膏进行烧结来进行。在此，激光束直接或间接定向到接触连接部的区域上。包含在银膏中的银粉末或银颗粒于是至少部分地熔化或烧结，使得构成接触导体与芯片接触面或导体材料带的电连接。铜膏的烧结相应地进行。将银膏或铜膏施加到芯片表面、导体材料带上并且必要时施加到接触导体上以及紧随其后的烧结能够并行地或者顺序地进行，其中于是是否首先给芯片接触面或者导体材料带设置膏或将该膏烧结是无关紧要的。也可行的是：首先在芯片接触面或者导体材料带处构成有接触部，以便接下来为了构成第二接触部而施加膏和进行烧结。关于所述方法步骤的顺序，在施加膏之前，也能够首先将接触导体设置在芯片接触面或导体材料带上。随后，将膏施加到具有接触导体的芯片接触面或导体材料带上，使得该接触导体于是同时浸入膏中。
通过替代于焊料使用银膏或者铜膏来制造接触连接部的方式，接触连接部可明显更长久地耐用。烧结的膏相对于强的温度波动和高的运行温度是明显更不敏感的。例如能够借助烧结的银膏达到芯片的高达300℃的运行温度。此外，也不再需要为了能够传输高的电流而在芯片连接面和导体材料带之间构成大量的接触连接部。根据本发明的方法在很大程度上与接触导体的横截面无关，使得能够显著减小接触导体或接触连接部的数量，由此芯片装置整体上可成本更低地制造。
作为接触导体，能够使用绞合线，优选绞合线带，尤其优选由铜或者铜合金构成的绞合线或者绞合线带。绞合线是尤其柔软的，使得相对于作为接触导体的实心线不会在芯片接触面或者导体材料带上在相应的接触部中出现任何剪切应力或拉伸应力，如这因大的温差能够引起。绞合线带相对于金属线或键合线具有相对大的横截面，由此借助于所述绞合线带能够传输高的电流。
绞合线也能够由银膏或铜膏至少部分地渗透。通过将绞合线浸入到膏中，膏或者银颗粒或铜颗粒能够进入到绞合线中，使得在进行烧结时能够构成银颗粒或铜颗粒和绞合线的尤其紧密的连接。膏也能够由于绞合线的毛细作用而由该绞合线吸收，使得绞合线在芯片接触面或导体材料带的区域中由银颗粒或铜颗粒填充。
此外能够提出，对于每个芯片接触面使用进一个绞合线。这通过如下方式变得可行：绞合线或者绞合线带能够具有相对大的宽度，所述宽度接近芯片接触面的尺寸。于是不再需要使用复数的接触导体。当使用仅一条绞合线来连接芯片接触面和导体材料带时，所述方法可尤其快从而成本低地实施。
银膏或者铜膏能够通过将衬底设置在加热元件处或设置在加热元件上来加热。衬底从而导体材料带以及芯片接触面于是能够被加热至，使得引起膏的溶剂的蒸发。由此，能够完全弃用炉子或者类似装置来在外部加热膏。
此外能够提出：在进行加热时借助于夹持机构来固持衬底。衬底于是一方面可精确地定位，而另一方面夹持机构能够具有加热元件或者本身构成加热元件。由此还进一步简化对银膏或铜膏的加热以蒸发溶剂。
在所述方法的过程中，还在完全地蒸发溶剂之前，能够烧结银膏或铜膏。因此能够防止在烧结之前银膏或铜膏完全干燥。完全地没有溶剂或干燥的膏会具有容易因干燥过程或者运动而引起的裂纹，所述裂纹会促使接触连接部失效。
接触导体能够在烧结期间借助于按压装置压到芯片接触面和/或导体材料带上。因此能够在接触导体和芯片接触面或导体材料带之间构成尤其紧密的接触部。此外，能够避免在冷却烧结的银膏或铜膏期间形成不期望的裂纹。
在所述方法的另一实施方式中，能够在进行烧结之后将接触导体分离。接触导体例如能够储存在滚筒或者绞盘上并且自动地被输送给芯片接触面或导体材料带。在此，首先将接触导体的一个端部安置在芯片接触面上。接触导体的一个部段能够设置在导体材料带上或者相反。在烧结银膏或者铜膏并且构成接触连接部之后，能够将接触导体在所述部段处分离或者切断，使得再次提供接触导体的自由端部以构成另一接触连接部。
芯片接触面能够通过将铜带施加到芯片表面上构成。芯片表面于是能够由半导材料，例如硅构成。通过施加铜带，能够尤其简单地进行芯片表面的金属化。铜带于是也能够简化与接触导体的电接触的构成。
此外，接触金属化部能够施加在导体材料带和/或芯片接触面上。接触金属化部能够相对薄地构成并且借助于银膏或铜膏或熔化的银膏或铜膏明显改进芯片接触面或导体材料带的可润湿性。
接触金属化部能够借助于物理气相沉积(PVD)、溅射沉积、电镀沉积或者无电电镀来构成。
接触金属化部能够由银、镍、铜、金、钯、铝或者这些金属中的一种金属的另外的合金构成。例如由银构成的接触金属化部可相对薄地制造并且也实现了相对更好的电流密度分布和尤其好的导热，例如以冷却芯片。此外，银膏或者铜膏能够在烧结时良好地与接触金属化部的银连接。
根据本发明的芯片装置，尤其用于功率晶体管等的芯片装置，包括：芯片；不导电的衬底，所述衬底具有在其上构成的导体材料带；和接触导体，其中芯片设置在衬底或者导体材料带上，其中分别在芯片的芯片接触面和导体材料带上施加银膏或者铜膏，其中接触导体浸入到芯片接触面上的银膏或者铜膏中并且浸入到导体材料带上的银膏或者铜膏中，其中包含在银膏或者铜膏中的溶剂通过加热被蒸发，其中接触连接部通过如下方式构成：银膏或者铜膏借助于激光能量烧结。
关于根据本发明的芯片装置的有利的效果参见对根据本发明的方法的优点描述。芯片装置的其它有利的实施方式从引用权利要求1的从属权利要求中得出。
附图说明
接下来参考附图详细阐述本发明的优选的实施方式。
附图示出：
图1示出在一个方法步骤期间芯片装置的第一实施方式的示意性剖视图；
图2示出在完成制造接触连接部之后的图1中的芯片装置的示意性剖视图；
图3示出芯片装置的第二实施方式的示意性剖视图；
图4示出芯片装置的第三实施方式的示意性剖视图。
具体实施方式
图1示出在制造接触连接部11期间的芯片装置10的示意性剖视图。芯片装置10包括不导电的衬底12，在所述衬底的表面13上构成有多个不同的导体材料带14和15。导体材料带14和15经由绝缘间隙16彼此分开从而彼此电绝缘。在导体材料带14和15上分别施加或构成由银或银合金构成的接触金属化部17。替选地，接触金属化部17也能够由镍、铜、金、钯、铝或者这些金属中的一个金属的另外的合金构成。在导体材料带15上设置有芯片18，所述芯片由半导体材料构成。在芯片18的背离导体材料带15的后侧19上施加有由银或银合金构成的接触金属化部23并且在芯片18的朝向导体材料带15的前侧20上施加有接触墩21。接触墩21将芯片18与导体材料带15连接。因此，在芯片18上构成后部的芯片接触面25和前部的芯片接触面26。芯片18借助芯片接触面26与导体材料带15的导体表面27接触或电连接。在导体材料带14的导体表面28上并且在芯片18的芯片接触面25上分别施加有限定量的银膏29。接触导体30构成为由铜构成的绞合线带31并且借助于其相应的端部32和33浸入到银膏29中，使得银膏29基本上围绕端部32或33。
如从图2中可见：银膏29在包含于其中的溶剂大多数被蒸发之后已经被烧结。所述烧结通过将激光能量引入到银膏29上和相应的端部32或33上来进行。因此，在具有银膏29和端部32的导体表面28上构成第一接触部34，而在具有银膏29和端部33的芯片接触面25上构成接触连接部11的第二接触部35。银膏29的未详细示出的银颗粒分别进入到端部32或33中并且通过烧结彼此烧结或部分地熔化，其中进行与绞合线带31的在此未详细示出的长丝和导体表面28或芯片接触面25的尤其紧密的连接。烧结的银膏29因此固定在接触区域36和37中。
图3示出芯片装置38的第二实施方式，所述芯片装置与图2中所示出的芯片装置的区别在于具有绞合线带39，所述绞合线带仅在银膏39被烧结之后才被分离。绞合线带39的端部40因此从接触区域41中突出，其中绞合线带39的部段42用于构成与芯片18的接触部43。
图4示出芯片装置44的第三实施方式，所述芯片装置与图2中所示出的芯片装置的区别在于具有导体材料带45和46，在所述导体材料带之间设置有芯片47。芯片47在芯片47的前侧50上构成两个前部的芯片接触面48和49，其中芯片47借助后侧51直接设置在衬底52上。芯片接触面48和49分别经由接触导体53或54与导体材料带45或46的导体表面57或58连接，所述接触导体构成为绞合线带55或56。
在之前所描述的实施例中，也能够将银膏更换为铜膏。

Claims (14)

1.一种用于在芯片(18，47)和导体材料带(14，45，46)之间构成接触连接部(11)的方法，所述芯片尤其是功率晶体管等，其中所述导体材料带在不导电的衬底(12，52)上构成，其中所述芯片设置在所述衬底或导体材料带(15)上，
其特征在于，
分别在所述芯片的芯片接触面(25，48，49)和所述导体材料带(14，45，46)上施加银膏(29)或者铜膏，其中接触导体(30，53，54)浸入到所述芯片接触面上的银膏或铜膏中并且浸入到所述导体材料带上的银膏或铜膏中，其中包含在所述银膏或铜膏中的溶剂通过加热至少部分地蒸发，其中所述接触连接部通过如下方式构成：所述银膏或所述铜膏借助于激光能量烧结。
2.根据权利要求1所述的方法，
其特征在于，
使用绞合线作为接触导体(30，53，54)，所述绞合线优选是绞合线带(31，55，56)，尤其优选由铜或者铜合金构成的绞合线或绞合线带。
3.根据权利要求2所述的方法，
其特征在于，
所述绞合线由所述银膏(29)或所述铜膏至少部分地渗透。
4.根据权利要求2或3所述的方法，
其特征在于，
对于每个芯片接触面(25，48，49)仅使用一个绞合线。
5.根据上述权利要求中任一项所述的方法，
其特征在于，
所述银膏(29)或者所述铜膏通过将所述衬底(12，52)设置在加热元件处或者设置在加热元件上来加热。
6.根据上述权利要求中任一项所述的方法，
其特征在于，
在进行加热时借助于夹持机构固持所述衬底(12，52)。
7.根据上述权利要求中任一项所述的方法，
其特征在于，
在完全地蒸发所述溶剂之前还烧结所述银膏(29)或所述铜膏。
8.根据上述权利要求中任一项所述的方法，
其特征在于，
在烧结期间借助于按压装置将所述接触导体(30，53，54)压到所述芯片接触面(25，48，49)和/或所述导体材料带(14，45，46)上。
9.根据上述权利要求中任一项所述的方法，
其特征在于，
在烧结之后将所述接触导体(30，53，54)分离。
10.根据上述权利要求中任一项所述的方法，
其特征在于，
通过将铜带施加到芯片表面上来构成所述芯片接触面(25，26，48，49)。
11.根据上述权利要求中任一项所述的方法，
其特征在于，
将接触金属化部(17，23)施加在所述导体材料带(14，45，46)和/或所述芯片接触面(25，26，48，49)上。
12.根据权利要求11所述的方法，
其特征在于，
借助于物理气相沉积(PVD)、溅射沉积、电镀或者无电电镀构成所述接触金属化部(17，23)。
13.根据权利要求11或12所述的方法，
其特征在于，
所述接触金属化部(17，23)由银、镍、铜、金、钯、铝或者这些金属中的一种的合金构成。
14.一种芯片装置(10，38，44)，其尤其用于功率晶体管等的芯片装置，所述芯片装置包括：芯片(18，47)；不导电的衬底(12，52)，所述衬底具有在其上构成的导体材料带(14，45，46)；和接触导体(30，53，54)，其中所述芯片设置在所述衬底或者导体材料带(15)上，
其特征在于，
将银膏(29)或者铜膏分别施加在所述芯片的芯片接触面(25，48，49)和所述导体材料带(14，45，46)上，其中所述接触导体浸入到所述芯片接触面上的银膏或铜膏中并且浸入到所述导体材料带上的银膏或铜膏中，其中包含在所述银膏或所述铜膏中的溶剂通过加热来蒸发，其中接触连接部(11)通过如下方式构成：所述银膏或所述铜膏借助于激光能量烧结。
CN201680015610.6A 2015-03-16 2016-02-15 芯片装置和用于构成接触连接部的方法 Pending CN107431058A (zh)

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