JP2009158743A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Abstract
【解決手段】半導体チップ11と、半導体チップ11を貫通して形成された15,16とを有した半導体装置であって、半導体チップ11の第1面35A(主面)に対する反対側の第2面35Bに、貫通電極15と接続したグランド層28と、貫通電極16に接続したパッチアンテナ33とをSiO2又はSiNよりなる無機絶縁層30を介して積層した構成とする。
【選択図】図3
Description
11 半導体チップ
11A 半導体基板
12 保護膜
14,71,73 絶縁膜
15,16 貫通電極
15A,16A 貫通部
17A,17B 再配線
18 封止樹脂
20,21 ポスト
22 ソルダーレジスト
25 外部接続端子
28 グランド層
30 無機絶縁層
31 絶縁層
33 パッチアンテナ
35 基板本体
35A 第1面
35B 第2面
36 素子形成層
37 電極パッド
39A,39B 貫通孔
41 ビア部
42 アンテナ部
45,46,48,49,50 レジスト層
61 逆F型アンテナ
62 ダイポールアンテナ
B 半導体装置形成領域
D 切断位置
Claims (9)
- 半導体素子と、該半導体素子を貫通して形成された貫通電極とを有した半導体装置であって、
前記半導体素子の主面に対する反対側面に、前記貫通電極に接続した受動層を無機絶縁層を介して積層してなる構成の半導体装置。 - 前記半導体素子の主面に対する反対側面に、貫通電極に接続したグランド層が設けられ、該グランド層上に前記無機絶縁層を積層してなる構成の半導体装置。
- 前記無機絶縁層は、SiO2又はSiNである請求項1又は2記載の半導体装置。
- 前記受動層は、パッチアンテナ、逆F型アンテナ、及びダイポールアンテナの群から選ばれる少なくともひとつのアンテナである請求項1乃至3のいずれか一項に記載の半導体装置。
- 前記半導体素子の主面に再配線が形成されてなる請求項1乃至4のいずれか一項に記載の半導体装置。
- 半導体基板に貫通孔を形成する工程と、
該貫通孔内に貫通電極を形成する工程と、
前記半導体基板の主面に対する反対側面に無機絶縁層を形成する工程と、
前記無機絶縁層上に受動層を形成する工程と、
前記半導体基板を切断して前記半導体装置を個片化する工程とを含む半導体装置の製造方法。 - 更に、前記半導体基板の主面に対する反対側面にグランド層を形成する工程と、
前記グランド層を被覆して、前記無機絶縁層を形成する工程とを有する請求項6記載の半導体装置の製造方法。 - 前記無機絶縁層をSiO2又はSiNで形成する請求項6又は7記載の半導体装置の製造方法。
- 前記半導体基板の主面に、前記貫通電極と電気的に接続される外部接続端子を形成する工程を更に有する請求項6乃至8のいずれか一項に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2007335690A JP5592053B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体装置及びその製造方法 |
US12/342,755 US8035192B2 (en) | 2007-12-27 | 2008-12-23 | Semiconductor device and manufacturing method thereof |
KR1020080134561A KR20090071482A (ko) | 2007-12-27 | 2008-12-26 | 반도체 장치 및 그 제조 방법 |
TW097150906A TW200931623A (en) | 2007-12-27 | 2008-12-26 | Semiconductor device and manufacturing method thereof |
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JP2007335690A JP5592053B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体装置及びその製造方法 |
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JP2009158743A true JP2009158743A (ja) | 2009-07-16 |
JP2009158743A5 JP2009158743A5 (ja) | 2011-01-06 |
JP5592053B2 JP5592053B2 (ja) | 2014-09-17 |
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US (1) | US8035192B2 (ja) |
JP (1) | JP5592053B2 (ja) |
KR (1) | KR20090071482A (ja) |
TW (1) | TW200931623A (ja) |
Cited By (4)
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KR20140080441A (ko) * | 2012-12-20 | 2014-06-30 | 인텔 코오퍼레이션 | 디바이스 상에 조립된 이산 안테나들을 포함하는 패키지 구조물 |
CN109755225A (zh) * | 2017-11-03 | 2019-05-14 | 三星电机株式会社 | 天线模块 |
US10784587B2 (en) | 2016-06-13 | 2020-09-22 | Lapis Semiconductor Co., Ltd. | Semiconductor device, communication system, and method of manufacturing semiconductor device |
US11791298B2 (en) | 2019-02-15 | 2023-10-17 | Samsung Electronics Co., Ltd. | Semiconductor package including plurality of semiconductor chips on common connection structure |
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WO2009136495A1 (ja) * | 2008-05-09 | 2009-11-12 | 国立大学法人九州工業大学 | チップサイズ両面接続パッケージ及びその製造方法 |
US8896136B2 (en) * | 2010-06-30 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Alignment mark and method of formation |
US20120306094A1 (en) * | 2011-06-06 | 2012-12-06 | Shahrazie Zainal Abu Bakar | Signal routing using through-substrate vias |
EP2648218B1 (en) | 2012-04-05 | 2015-10-14 | Nxp B.V. | Integrated circuit and method of manufacturing the same |
TWI544593B (zh) * | 2013-09-09 | 2016-08-01 | 矽品精密工業股份有限公司 | 半導體裝置及其製法 |
CN108235792B (zh) * | 2016-10-21 | 2021-01-26 | 京瓷株式会社 | 标签用基板、rfid标签以及rfid*** |
KR102334710B1 (ko) | 2017-03-28 | 2021-12-02 | 삼성전기주식회사 | 전자부품 내장 기판 |
US10181447B2 (en) | 2017-04-21 | 2019-01-15 | Invensas Corporation | 3D-interconnect |
CN109411535B (zh) * | 2017-08-15 | 2022-03-18 | 台达电子工业股份有限公司 | 半导体装置 |
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JP2006203176A (ja) * | 2004-12-20 | 2006-08-03 | Sanyo Electric Co Ltd | 半導体装置及び半導体モジュール |
JP2007036571A (ja) * | 2005-07-26 | 2007-02-08 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2007049115A (ja) * | 2005-07-13 | 2007-02-22 | Seiko Epson Corp | 半導体装置 |
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JP4010881B2 (ja) | 2002-06-13 | 2007-11-21 | 新光電気工業株式会社 | 半導体モジュール構造 |
US7531407B2 (en) * | 2006-07-18 | 2009-05-12 | International Business Machines Corporation | Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same |
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JP2006203176A (ja) * | 2004-12-20 | 2006-08-03 | Sanyo Electric Co Ltd | 半導体装置及び半導体モジュール |
JP2007049115A (ja) * | 2005-07-13 | 2007-02-22 | Seiko Epson Corp | 半導体装置 |
JP2007036571A (ja) * | 2005-07-26 | 2007-02-08 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Cited By (9)
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KR20140080441A (ko) * | 2012-12-20 | 2014-06-30 | 인텔 코오퍼레이션 | 디바이스 상에 조립된 이산 안테나들을 포함하는 패키지 구조물 |
JP2014123945A (ja) * | 2012-12-20 | 2014-07-03 | Intel Corp | デバイス上に取り付けられた個別アンテナを含むパッケージ構造 |
US9166284B2 (en) | 2012-12-20 | 2015-10-20 | Intel Corporation | Package structures including discrete antennas assembled on a device |
KR101587331B1 (ko) | 2012-12-20 | 2016-01-20 | 인텔 코포레이션 | 패키지 구조물 및 패키지 구조물을 형성하는 방법 |
US9419339B2 (en) | 2012-12-20 | 2016-08-16 | Intel Corporation | Package structures including discrete antennas assembled on a device |
US10784587B2 (en) | 2016-06-13 | 2020-09-22 | Lapis Semiconductor Co., Ltd. | Semiconductor device, communication system, and method of manufacturing semiconductor device |
CN109755225A (zh) * | 2017-11-03 | 2019-05-14 | 三星电机株式会社 | 天线模块 |
CN109755225B (zh) * | 2017-11-03 | 2023-08-11 | 三星电子株式会社 | 天线模块 |
US11791298B2 (en) | 2019-02-15 | 2023-10-17 | Samsung Electronics Co., Ltd. | Semiconductor package including plurality of semiconductor chips on common connection structure |
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Publication number | Publication date |
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JP5592053B2 (ja) | 2014-09-17 |
KR20090071482A (ko) | 2009-07-01 |
US8035192B2 (en) | 2011-10-11 |
TW200931623A (en) | 2009-07-16 |
US20090166811A1 (en) | 2009-07-02 |
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