JP2008227126A - 微細同軸ワイヤー、その製造方法、及び半導体装置 - Google Patents
微細同軸ワイヤー、その製造方法、及び半導体装置 Download PDFInfo
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- JP2008227126A JP2008227126A JP2007063103A JP2007063103A JP2008227126A JP 2008227126 A JP2008227126 A JP 2008227126A JP 2007063103 A JP2007063103 A JP 2007063103A JP 2007063103 A JP2007063103 A JP 2007063103A JP 2008227126 A JP2008227126 A JP 2008227126A
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- fine coaxial
- wire
- coaxial wire
- insulating layer
- conductive
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Abstract
【効果】本発明の微細同軸ワイヤーを、微細な半導体装置の電極間の導通配線として用いることにより、有効にノイズを低減することができると共に、高い特性インピーダンスを備える微細同軸ワイヤーを用いれば、高い信号周波数(例えば数十〜数百GHz)における高速信号伝送も可能となる。
【選択図】図1
Description
[1] 金属導体からなる導電ワイヤー、該導電ワイヤーの周面を被覆する絶縁層、及び該絶縁層の外周面を被覆する金属導体層からなる微細同軸ワイヤーであって、上記絶縁層が電着法により形成されてなることを特徴とする微細同軸ワイヤー。
[2] 上記導電ワイヤーを構成する金属導体が金であることを特徴とする[1]記載の微細同軸ワイヤー。
[3] 上記絶縁層が電着ポリイミドで形成されていることを特徴とする[1]又は[2]記載の微細同軸ワイヤー。
[4] 上記導電ワイヤーの径が5〜50μmであることを特徴とする[1]乃至[3]のいずれかに記載の微細同軸ワイヤー。
[5] 特性インピーダンスが10〜300Ωであることを特徴とする[1]乃至[4]のいずれかに記載の微細同軸ワイヤー。
[6] 特性インピーダンスが40〜60Ωであることを特徴とする[1]乃至[4]のいずれかに記載の微細同軸ワイヤー。
[7] 金属導体からなる導電ワイヤーの周面上に電着法により絶縁層を形成し、更に、該絶縁層の外周面上に湿式又は乾式めっき法により金属導体層を形成することを特徴とする[1]記載の微細同軸ワイヤーの製造方法。
[8] 上記導電ワイヤーを構成する金属導体が金であることを特徴とする[7]記載の微細同軸ワイヤーの製造方法。
[9] 上記絶縁層として電着ポリイミドを形成することを特徴とする[7]又は[8]記載の微細同軸ワイヤーの製造方法。
[10] 上記金属導体層の一部又は全部を、無電解めっき法にて形成することを特徴とする[7]乃至[9]のいずれかに記載の微細同軸ワイヤーの製造方法。
[11] 上記導電ワイヤーの径が5〜50μmであることを特徴とする[7]乃至[10]のいずれかに記載の微細同軸ワイヤーの製造方法。
[12] 微細同軸ワイヤーの特性インピーダンスが10〜300Ωであることを特徴とする[7]乃至[11]のいずれかに記載の微細同軸ワイヤーの製造方法。
[13] 微細同軸ワイヤーの特性インピーダンスが40〜60Ωであることを特徴とする[7]乃至[11]のいずれかに記載の微細同軸ワイヤーの製造方法。
[14] 上記導電ワイヤーの径に応じて上記絶縁層の厚さを制御して、所定の特性インピーダンスを有する微細同軸ワイヤーを製造することを特徴とする[7]乃至[13]のいずれかに記載の微細同軸ワイヤーの製造方法。
[15] [1]乃至[6]のいずれかに記載の微細同軸ワイヤーを電極間の導通配線として用いてなることを特徴とする半導体装置。
[16] 上記導電ワイヤーを信号電極の導通配線とし、上記金属導体層を接地電極の導通配線として用いてなることを特徴とする[15]記載の半導体装置。
本発明の微細同軸ワイヤーは、金属導体からなる導電ワイヤー、導電ワイヤーの周面を被覆する絶縁層、及び絶縁層の外周面を被覆する金属導体層からなる。図1は、本発明の微細同軸ワイヤーの一例の径方向の断面図であり、微細同軸ワイヤー1は、その中心軸部の金属導体からなる導電ワイヤー2の周面を被覆して絶縁層3が設けられ、更に、この絶縁層3の外周面を被覆して金属導体層3が設けられた構造となっている。図1の場合、断面が円形状のワイヤーの場合を示しているが、これに限定されるものではなく、断面が楕円状、矩形状等の多角形状のものであってもよい。
導電ワイヤーとして直径25μm、長さ約8cmの金ワイヤーを用い、これを10容量%硫酸水溶液中で揺動させながら60秒間浸漬することにより酸洗浄を施し、水洗した。
プレディップ1:市販の電着液用希釈液(株式会社ピーアイ技術研究所製)中で揺動させながら15秒間浸漬。
プレディップ2:市販の電着液(株式会社ピーアイ技術研究所製 Q−ED−21−129)中で揺動させながら15秒間浸漬。
2 導電ワイヤー(心線)
3 絶縁層
4 金属導体層(シールド層)
10 半導体装置
11 配線板
12 半導体チップ
13 チップ接続樹脂(アンダーフィル)
21,22 信号用電極
41,42 接地用電極
Claims (16)
- 金属導体からなる導電ワイヤー、該導電ワイヤーの周面を被覆する絶縁層、及び該絶縁層の外周面を被覆する金属導体層からなる微細同軸ワイヤーであって、上記絶縁層が電着法により形成されてなることを特徴とする微細同軸ワイヤー。
- 上記導電ワイヤーを構成する金属導体が金であることを特徴とする請求項1記載の微細同軸ワイヤー。
- 上記絶縁層が電着ポリイミドで形成されていることを特徴とする請求項1又は2記載の微細同軸ワイヤー。
- 上記導電ワイヤーの径が5〜50μmであることを特徴とする請求項1乃至3のいずれか1項記載の微細同軸ワイヤー。
- 特性インピーダンスが10〜300Ωであることを特徴とする請求項1乃至4のいずれか1項記載の微細同軸ワイヤー。
- 特性インピーダンスが40〜60Ωであることを特徴とする請求項1乃至4のいずれか1項記載の微細同軸ワイヤー。
- 金属導体からなる導電ワイヤーの周面上に電着法により絶縁層を形成し、更に、該絶縁層の外周面上に湿式又は乾式めっき法により金属導体層を形成することを特徴とする請求項1記載の微細同軸ワイヤーの製造方法。
- 上記導電ワイヤーを構成する金属導体が金であることを特徴とする請求項7記載の微細同軸ワイヤーの製造方法。
- 上記絶縁層として電着ポリイミドを形成することを特徴とする請求項7又は8記載の微細同軸ワイヤーの製造方法。
- 上記金属導体層の一部又は全部を、無電解めっき法にて形成することを特徴とする請求項7乃至9のいずれか1項記載の微細同軸ワイヤーの製造方法。
- 上記導電ワイヤーの径が5〜50μmであることを特徴とする請求項7乃至10のいずれか1項記載の微細同軸ワイヤーの製造方法。
- 微細同軸ワイヤーの特性インピーダンスが10〜300Ωであることを特徴とする請求項7乃至11のいずれか1項記載の微細同軸ワイヤーの製造方法。
- 微細同軸ワイヤーの特性インピーダンスが40〜60Ωであることを特徴とする請求項7乃至11のいずれか1項記載の微細同軸ワイヤーの製造方法。
- 上記導電ワイヤーの径に応じて上記絶縁層の厚さを制御して、所定の特性インピーダンスを有する微細同軸ワイヤーを製造することを特徴とする請求項7乃至13のいずれか1項記載の微細同軸ワイヤーの製造方法。
- 請求項1乃至6のいずれか1項記載の微細同軸ワイヤーを電極間の導通配線として用いてなることを特徴とする半導体装置。
- 上記導電ワイヤーを信号電極の導通配線とし、上記金属導体層を接地電極の導通配線として用いてなることを特徴とする請求項15記載の半導体装置。
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