JPH0766236A - 半導体素子用多層被覆ボンディングワイヤ及び半導体装置 - Google Patents

半導体素子用多層被覆ボンディングワイヤ及び半導体装置

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Publication number
JPH0766236A
JPH0766236A JP5216153A JP21615393A JPH0766236A JP H0766236 A JPH0766236 A JP H0766236A JP 5216153 A JP5216153 A JP 5216153A JP 21615393 A JP21615393 A JP 21615393A JP H0766236 A JPH0766236 A JP H0766236A
Authority
JP
Japan
Prior art keywords
wire
bonding wire
semiconductor device
bonding
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5216153A
Other languages
English (en)
Inventor
Takeaki Abe
武明 安倍
Kenichi Kurihara
健一 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP5216153A priority Critical patent/JPH0766236A/ja
Publication of JPH0766236A publication Critical patent/JPH0766236A/ja
Pending legal-status Critical Current

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    • H01L2224/45669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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    • H01L2224/8512—Aligning
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    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
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  • Wire Bonding (AREA)

Abstract

(57)【要約】 【目的】一種類の金属材料よりなる均質構造の従来ワイ
ヤが有する欠点を解消して、伝送特性の劣化を招く恐れ
のない新規なボンディングワイヤ、並びにそのボンディ
ングワイヤを用いてなる半導体装置を提供する。 【構成】芯線１として線径25μｍ程度の金属ワイヤを用
い、この芯線１の外周に厚さ２μｍの絶縁被膜２を形成
し、さらにその外側に厚さ0.5 μｍの金属導体被膜３を
形成し多層被覆構造のボンディングワイヤａを作製し
た。このボンディングワイヤａを用いて、芯線１の一端
を電極５にボールボンディングで接続し他端は信号リー
ド６にウエッジボンディングで接続して、半導体チップ
４上の多数の電極５と各電極５に対応せしめて形成した
信号リード６とをボンディングすると共に、金属導体３
を接地リード７に接続せしめて半導体装置を作製した。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は半導体素子用ボンディン
グワイヤ、詳しくは、半導体装置の製造において半導体
チップの電極と外部リードとを電気的に接続する際に用
いるボンディングワイヤに関する。
【０００２】
【従来の技術】半導体装置の製造における組立工程で
は、所定の集積回路を形成した半導体チップ上の多数の
電極と、各電極に対応して多数設けられ実装時に接続端
子として機能する外部リードとを接続する方法として、
両者の間に導電性の金属ワイヤをループ状に張設するワ
イヤボンディング技術が一般に採用されている。
【０００３】
【発明が解決しようとする課題】しかし乍ら、従来用い
られているボンディングワイヤは所望の一種類の金属材
料からなる均質構造のものであることから特性インピー
ダンスが高く、他の回路との整合が難しいためにワイヤ
両端において高周波信号が反射されて伝送特性の劣化を
招くという欠点があった。
【０００４】本発明はこのような従来事情に鑑みてなさ
れたものであり、従来の一種類の金属材料からなる均質
構造のワイヤが有する欠点を解消して、伝送特性の劣化
を招く恐れのない新規なボンディングワイヤを提供する
ことを目的とする。
【０００５】
【課題を解決するための手段】以上の目的を達成するた
めに、本発明のボンディングワイヤは、金属導体からな
る芯線を絶縁体で被覆して絶縁すると共に、その絶縁被
膜の外側に金属導体被膜を形成してなる多層被覆ワイヤ
であることを特徴とする。このような多層構造とするこ
とによって絶縁被膜が誘電体として作用し、外側の金属
導体被膜を接地することによって高周波信号の内部反射
を抑制する効果を発揮し、高周波特性を改善することが
できる。
【０００６】上記芯線は従来のボンディングワイヤの成
形材料として知られている金属元素、即ちＡｕ，Ａｇ，
Ｃｕ，Ａｌ，Ｐｄ，Ｐｔ，Ｐｂの中の１種、又はその金
属元素を主体とする合金を用いる。
【０００７】絶縁体は誘電体として作用するもので、誘
電率が高く、誘電正接が低く、かつ芯線を被覆可能な合
成樹脂が好ましい。例えばポリウレタン、ホルマール樹
脂、ポリエステル、ポリエチレン、ポリイミド、エポキ
シ樹脂、ポリ四弗化エチレン等が挙げられる。
【０００８】絶縁被膜の外側に設ける金属導体被膜は、
芯線と同じ材料、即ちＡｕ，Ａｇ，Ｃｕ，Ａｌ，Ｐｄ，
Ｐｔ，Ｐｂの中の１種、又はその金属元素を主体とする
合金が使用できる。金属導体被膜を設ける方法は、材質
に応じて無電解めっき，電解めっき，真空蒸着，スパッ
タリング等の手法を適宜選択して行うことができる。
【０００９】
【実施例】以下、本発明の一実施例を図１乃至図３に基
づいて説明する。図１は本実施例にかかるボンディング
ワイヤａの断面構造を表す斜視図、図２は同ワイヤａを
ボールボンディングする際に、ワイヤ先端をボールアッ
プした状態を示す。
【００１０】Ａｕ，Ａｇ，Ｃｕ，Ａｌ，Ｐｄ，Ｐｔ，Ｐ
ｂの中の１種、又はその金属元素を主体とする合金を用
いて、従来のワイヤと同様の方法により線径25μｍ程度
の芯線１を作製し、この芯線１の外周に絶縁被膜２を形
成すると共に、さらにその外側に金属導体被膜３を形成
して多層被覆構造のボンディングワイヤａを得た（図
１，２参照）。
【００１１】絶縁被膜２は誘電率が高く、誘電正接が低
い絶縁体で且つ芯線１の外周を被覆可能な合成樹脂、例
えばポリウレタン，ホルマール樹脂，ポリエステル，ポ
リエチレン，ポリイミド，エポキシ樹脂，ポリ四弗化エ
チレン等からなり、上記芯線１の外周に厚さ２μｍ程度
に被覆する。
【００１２】金属導体被膜３は芯線１と同じ金属元素若
しくはその金属元素を主体とする合金からなり、無電解
めっき，電解めっき，真空蒸着，スパッタリング等の手
法を適宜選択して、上記絶縁被膜２の外周に厚さ0.5 μ
ｍ程度に被覆する。
【００１３】このような構成からなる多層被覆ボンディ
ングワイヤａを用いて、芯線１の一端を電極５にボール
ボンディングで接続し他端は信号リード６にウエッジボ
ンディングで接続して、半導体チップ４上の多数の電極
５と各電極５に対応せしめて形成した信号リード６とを
ボンディングすると共に、金属導体３を接地リード７に
接続せしめて半導体装置を作製した（図３参照）。
【００１４】この半導体装置を評価したところ、伝送特
性の劣化がほとんどなく、さらに隣合うボンディングワ
イヤａ，ａ相互間及びボンディングワイヤａと半導体チ
ップ４のエッジ4aとの間での接触によるショート、並び
に夫々のボンディングワイヤａにおけるループ異常等の
問題は一切なく、良好な動作を確認した。
【００１５】
【発明の効果】本発明のボンディングワイヤは以上説明
したように、金属導体からなる芯線の周囲を絶縁体で被
覆し、さらにその外側に金属導体被膜を形成した多層被
覆構造としたので、絶縁体が誘電体として作用し、外側
の金属導体被膜を接地することによって高周波信号の内
部反射を抑制する効果を発揮し、高周波特性を改善する
ことができる。従って、この多層被覆ボンディングワイ
ヤを用いることで、従来のワイヤの欠点を解消し、伝送
特性の劣化を招く恐れのない信頼性の高い半導体装置を
提供することができる。
【図面の簡単な説明】
【図１】 本発明多層被覆ボンディングワイヤの断面構
造を示す斜視図。
【図２】 図１に示すボンディングワイヤを用いてボー
ルボンディングする際のボールアップした状態を示す断
面図。
【図３】 図１に示すボンディングワイヤを用いてなる
半導体装置の要部拡大断面図。
【符号の説明】
ａ：ボンディングワイヤ １：芯線
２：絶縁被膜 ３：金属導体被膜 ４：半導体チップ
５：電極 ６：信号リード ７：接地リード
８：基板

Claims (5)

    【特許請求の範囲】
  1. 【請求項１】 半導体素子における第１の位置と第２の
    位置とを電気的に接続するボンディングワイヤであっ
    て、金属導体からなる芯線を絶縁体で被覆して絶縁する
    と共に、該絶縁被膜の外側に金属導体被膜を形成してな
    ることを特徴とする多層被覆ボンディングワイヤ。
  2. 【請求項２】 上記芯線がＡｕ，Ａｇ，Ｃｕ，Ａｌ，Ｐ
    ｄ，Ｐｔ，Ｐｂの中の１種又はそれを主体とする合金で
    あることを特徴とする請求項１記載の多層被覆ボンディ
    ングワイヤ。
  3. 【請求項３】 上記絶縁体が合成樹脂であることを特徴
    とする請求項１記載の多層被覆ボンディングワイヤ。
  4. 【請求項４】 上記金属導体被膜がＡｕ，Ａｇ，Ｃｕ，
    Ａｌ，Ｐｄ，Ｐｔ，Ｐｂの中の１種又はそれを主体とす
    る合金であることを特徴とする請求項１記載の多層被覆
    ボンディングワイヤ。
  5. 【請求項５】 第１の位置と第２の位置とをボンディン
    グワイヤで電気的に接続した半導体素子を封止してなる
    半導体装置であって、前記ボンディングワイヤが請求項
    １又は２又は３又は４記載のものであることを特徴とす
    る半導体装置。
JP5216153A 1993-08-31 1993-08-31 半導体素子用多層被覆ボンディングワイヤ及び半導体装置 Pending JPH0766236A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5216153A JPH0766236A (ja) 1993-08-31 1993-08-31 半導体素子用多層被覆ボンディングワイヤ及び半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5216153A JPH0766236A (ja) 1993-08-31 1993-08-31 半導体素子用多層被覆ボンディングワイヤ及び半導体装置

Publications (1)

Publication Number Publication Date
JPH0766236A true JPH0766236A (ja) 1995-03-10

Family

ID=16684121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5216153A Pending JPH0766236A (ja) 1993-08-31 1993-08-31 半導体素子用多層被覆ボンディングワイヤ及び半導体装置

Country Status (1)

Country Link
JP (1) JPH0766236A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424169B1 (ko) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 골드와이어의 강도를 향상시키는 방법
JP2008227126A (ja) * 2007-03-13 2008-09-25 National Institute Of Advanced Industrial & Technology 微細同軸ワイヤー、その製造方法、及び半導体装置
JP2009280917A (ja) * 2004-02-06 2009-12-03 Kansai Engineering:Kk 線材
JP2010062395A (ja) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
JP2016524338A (ja) * 2013-07-03 2016-08-12 ローゼンベルガー ホーフフレクベンツテクニーク ゲーエムベーハー ウント ツェーオー カーゲー 低電磁干渉配線を有するダイパッケージ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100424169B1 (ko) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 골드와이어의 강도를 향상시키는 방법
JP2009280917A (ja) * 2004-02-06 2009-12-03 Kansai Engineering:Kk 線材
JP2008227126A (ja) * 2007-03-13 2008-09-25 National Institute Of Advanced Industrial & Technology 微細同軸ワイヤー、その製造方法、及び半導体装置
JP2010062395A (ja) * 2008-09-04 2010-03-18 Sumitomo Metal Mining Co Ltd 銅ボンディングワイヤ
JP2016524338A (ja) * 2013-07-03 2016-08-12 ローゼンベルガー ホーフフレクベンツテクニーク ゲーエムベーハー ウント ツェーオー カーゲー 低電磁干渉配線を有するダイパッケージ

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