JP2008166789A - 液晶表示装置用アレイ基板及びその製造方法 - Google Patents
液晶表示装置用アレイ基板及びその製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 claims abstract description 42
- 230000004888 barrier function Effects 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 35
- 238000001039 wet etching Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 8
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 15
- 239000011241 protective layer Substances 0.000 claims 3
- 238000010030 laminating Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 17
- 238000000059 patterning Methods 0.000 abstract description 9
- 238000001312 dry etching Methods 0.000 abstract description 5
- 239000007769 metal material Substances 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 230000005540 biological transmission Effects 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 2
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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Abstract
【解決手段】ソース電極及びドレイン電極の下部に、ソース電極及びドレイン電極を構成する金属物質の湿式エッチング液にエッチングされない物質を利用してバリア層を形成して、バリア層を異方性の乾式エッチングによってパターニングし、望むチャンネル部のCDを得る。従って、湿式エッチングの過程でソース電極及びドレイン電極がオーバーエッチングされる場合でも、一定幅のチャンネル部を形成できる。
【選択図】図4
Description
144:ドレイン電極 122:ゲート電極
130 : アクティブ層
132:オーミックコンタクトパターン
136:バリアパターン 150:画素電極
ch:チャンネル
Claims (13)
- 基板上に形成されるゲート配線と;
前記ゲート配線上に形成されるゲート絶縁膜と;
前記ゲート配線と交差するデータ配線と;
前記ゲート配線に連結されるゲート電極と;
前記ゲート絶縁膜上に、前記ゲート電極に対応するアクティブ層と;
前記アクティブ層上に位置して、互いに第1距離離隔されている第1及び第2オーミックコンタクト層と;
前記第1及び第2オーミックコンタクト層上に各々位置して、互いに前記第1距離離隔し、その間に前記アクティブ層が露出される第1及び第2バリアパターンと;
前記第1及び第2バリアパターン上に各々位置して、前記データ配線に連結されるソース電極と前記ソース電極から前記第1距離より大きい第2距離離隔されているドレイン電極と;
前記ドレイン電極に連結される画素電極と
を含む液晶表示装置用アレイ基板。 - 前記第1及び第2バリアパターンは、モリブデン(Mo)、モリブデン−チタン合金(MoTi)のうち、少なくとも一つを含んで構成される
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板。 - 前記ソース電極及びドレイン電極は、銅(Cu)、銅−チタン合金(CuTi)、アルミニウム(Al)及びアルミニウム合金(AlNd)のうち、少なくとも一つを含んで構成される
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板。 - 前記第1及び第2オーミックコンタクト層、前記第1及び第2バリアパターン、前記ソース電極及びドレイン電極各々のペアは、前記ゲート電極の中心部に対して対称的である
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板。 - 前記第1及び第2バリアパターンの間の離隔領域は、前記第1及び第2オーミックコンタクト層間の離隔領域と完全に重なる
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板。 - ドレインコンタクトホールを含む保護層をさらに含み、
前記画素電極は、前記ドレインコンタクトホールを通じて前記ドレイン電極に連結される
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板。 - 基板上にゲート配線と、前記ゲート配線に連結されるゲート電極を形成する段階と;
前記ゲート電極及びゲート配線上にゲート絶縁膜を形成する段階と;
前記ゲート絶縁膜上に、各々が前記ゲート電極に対応するアクティブ層、不純物非晶質シリコンパターン及び金属パターンを順に積層する段階と;
前記金属パターン上に、互いに第1距離離隔するソース電極及びドレイン電極と、前記ゲート配線と交差して前記ソース電極に連結されるデータ配線を形成する段階と;
前記金属パターン及び前記不純物非晶質シリコンパターンをエッチングして、前記ソース電極及びドレイン電極の下部に位置し、互いに前記第1距離より小さい第2距離離隔する第1及び第2バリアパターンと、前記第1及び第2バリアパターンの下部に位置して、互いに前記第2距離離隔する第1及び第2オーミックコンタクト層を形成する段階と;
前記ドレイン電極に連結される画素電極を形成する段階と
を含む液晶表示装置用アレイ基板の製造方法。 - 前記ソース電極及びドレイン電極、データ配線を形成する段階は、
前記金属パターン上に第1金属層を形成する段階と;
前記第1金属層上に位置して前記金属パターンに対応し、互いに前記第2距離離隔される第1及び第2感光物質パターンを形成する段階と;
前記第1及び第2感光物質パターンをマスクとして利用して、第1金属層を湿式エッチングする段階と
を含むことを特徴とする請求項7に記載の液晶表示装置用アレイ基板の製造方法。 - 前記金属層及び不純物非晶質シリコンパターンをエッチングする段階は、
前記第1及び第2感光物質パターンをマスクとして利用して、前記金属パターン及び前記不純物非晶質シリコンパターンを異方性乾式エッチングして前記アクティブ層を露出する段階と;
前記第1及び第2感光物質パターンを除去する段階と
を含むことを特徴とする請求項8に記載の液晶表示装置用アレイ基板の製造方法。 - 前記金属パターンは、モリブデン(Mo)、モリブデン−チタン合金(MoTi)のうち、少なくとも一つを含んで構成される
ことを特徴とする請求項9に記載の液晶表示装置用アレイ基板の製造方法。 - 前記ソース電極及びドレイン電極は、銅(Cu)、銅−チタン合金(CuTi)、アルミニウム(Al)及びアルミニウム合金(AlNd)のうち、少なくとも一つを含んで構成される
ことを特徴とする請求項10に記載の液晶表示装置用アレイ基板の製造方法。 - 前記ソース電極及びドレイン電極上に、ドレインコンタクトホールを含む保護層を形成する段階を含み、
前記保護層上の前記画素電極は、前記ドレインコンタクトホールを通じて前記ドレイン電極に連結される
ことを特徴とする請求項7に記載の液晶表示装置用アレイ基板の製造方法。 - 前記第1及び第2バリアパターンの間の離隔領域は、前記第1及び第2オーミックコンタクト層間の離隔領域と完全に重なる
ことを特徴とする請求項7に記載の液晶表示装置用アレイ基板の製造方法。
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KR1020060133795A KR100937173B1 (ko) | 2006-12-26 | 2006-12-26 | 박막트랜지스터 액정표시장치용 어레이 기판 및 그제조방법 |
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WO2012108301A1 (ja) | 2011-02-07 | 2012-08-16 | シャープ株式会社 | アクティブマトリクス基板、表示パネル及び表示装置 |
KR101338688B1 (ko) | 2011-06-02 | 2013-12-06 | 엘지이노텍 주식회사 | 태양전지 및 그의 제조방법 |
JP2019033288A (ja) * | 2009-11-27 | 2019-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019075593A (ja) * | 2008-07-31 | 2019-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019082691A (ja) * | 2010-02-26 | 2019-05-30 | 株式会社半導体エネルギー研究所 | 液晶表示装置、携帯電話 |
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JP7122421B2 (ja) | 2008-07-31 | 2022-08-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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Also Published As
Publication number | Publication date |
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TW200830015A (en) | 2008-07-16 |
TWI363915B (en) | 2012-05-11 |
KR20080059889A (ko) | 2008-07-01 |
US20080210942A1 (en) | 2008-09-04 |
JP4958764B2 (ja) | 2012-06-20 |
CN101211075A (zh) | 2008-07-02 |
CN100594408C (zh) | 2010-03-17 |
US8497507B2 (en) | 2013-07-30 |
KR100937173B1 (ko) | 2010-01-15 |
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