JP2018117064A - 窒化物半導体デバイス及び窒化物半導体デバイスの製造方法 - Google Patents
窒化物半導体デバイス及び窒化物半導体デバイスの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 3
- 229910002704 AlGaN Inorganic materials 0.000 claims description 64
- 230000004888 barrier function Effects 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 2
- 230000006872 improvement Effects 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 abstract description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 124
- 229910002601 GaN Inorganic materials 0.000 description 123
- 230000000052 comparative effect Effects 0.000 description 18
- 229910010271 silicon carbide Inorganic materials 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 13
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
式(1):NH3/(H2+NH3)<10%
実施例1として、図1に示されるHEMT1を、上記実施形態にて説明した製造方法に沿って形成した。すなわち、実施例1では、SiC基板上に、厚さ20nmのAlNバッファ層と、厚さ500nmのGaNチャネル層と、厚さ1nmのAlNスペーサ層と、Al組成25%、厚さ20nmのAlGaNバリア層と、Ti層/Al層からなるオーミック電極であるソース及びドレインと、Ni層/Au層からなるゲート電極と、表面保護膜であるSiN膜とを有するHEMTを形成した。AlNバッファ層の成長温度は1100℃であり、GaNチャネル層の成長温度は1040℃であり、AlNスペーサ層及びAlGaNバリア層の成長温度は1000℃であった。AlNスペーサ層及びAlGaNバリア層の成長圧力は50Torrであった。AlNスペーサ層を成長する際のNH3の流量は、ガスの全体流量に対して10%に設定した。
比較例1では、実施例1と同様にHEMTを上記製造方法に沿って形成した。比較例1では、実施例1と比較して、GaNチャネル層の厚さを大きくすると共に、GaNチャネル層の成長温度を高くした。具体的には、GaNチャネル層の厚さは1200nmとし、GaNチャネル層の成長温度は1080℃とした。また比較例1では、実施例1と比較して、AlNスペーサ層の成長圧力を高くすると共に、ガスの全体流量に対するNH3の流量を大きくした。具体的には、AlNスペーサ層の成長圧力を150Torrとし、AlNスペーサ層を成長する際のNH3の流量は、ガスの全体流量に対して30%に設定した。
比較例2では、実施例1と同様にHEMTを上記製造方法に沿って形成した。比較例2では、実施例1と比較して、GaNチャネル層の厚さを大きくすると共に、GaNチャネル層の成長温度を高くした。具体的には、比較例1と同様に、GaNチャネル層の厚さは1200nmとし、GaNチャネル層の成長温度は1080℃とした。
Claims (8)
- 炭化ケイ素(SiC)基板の上に1050℃以下の成長温度にて、600nm以下の厚さを有するGaNチャネル層を成長する工程と、
50Torr以下の成長圧力であって、水素(H2)及びアンモニア(NH3)の合計流量で実質的に決定される全体流量に対してアンモニア(NH3)の流量が10%以下である条件にて、前記GaNチャネル層上にAlN層を成長する工程と、
を備える窒化物半導体デバイスの製造方法。 - 50Torr以下の成長圧力であって、水素(H2)及びアンモニア(NH3)の流量が、NH3/(H2+NH3)<10%、を満たす条件にて、前記AlN層上にAlGaN層を成長する工程をさらに備える、請求項1に記載の窒化物半導体デバイスの製造方法。
- 前記AlN層上に、組成がAl0.2Ga0.8Nであり、且つ20nmの厚さを有する前記AlGaN層を成長する、請求項2に記載の窒化物半導体デバイスの製造方法。
- 前記AlGaN層上に3nmの厚さを有するGaN層をさらに成長する、請求項3に記載の窒化物半導体デバイスの製造方法。
- 前記AlN層の厚さは、約1nmである、請求項1〜4のいずれか一項に記載の窒化物半導体デバイスの製造方法。
- 600nm以下の厚さを有するGaNチャネル層と、
前記GaNチャネル層上に設けられ、約1nmの厚さを有するAlN層と、
前記AlN層上に設けられるバリア層と、
を備え、
前記GaNチャネル層は、X線ロッキングカーブ法による(102)面の半値幅が500arcsec以上であり、
前記AlN層の表面は1×109/cm2以上の凹部密度を有する、
窒化物半導体デバイス。 - 600nm以下の厚さを有するGaNチャネル層と、
前記GaNチャネル層上に設けられ、約1nmの厚さを有するAlN層と、
前記AlN層上に設けられるバリア層と、
を備え、
前記GaNチャネル層は、X線ロッキングカーブ法による(102)面の半値幅が500arcsec以上であり、
前記AlN層は0.2nm以上の二乗平均面粗さを有する、
窒化物半導体デバイス。 - 前記バリア層がAlGaN層である請求項6もしくは7に記載の窒化物半導体デバイス。
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US15/874,408 US10263094B2 (en) | 2017-01-19 | 2018-01-18 | Nitride semiconductor device and process of forming the same |
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JP7439536B2 (ja) * | 2020-01-28 | 2024-02-28 | 富士通株式会社 | 半導体装置 |
CN114520263A (zh) * | 2020-11-19 | 2022-05-20 | 联华电子股份有限公司 | 半导体装置及半导体装置的制作方法 |
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