JP2007180384A - 半導体パッケージ及びその製造方法 - Google Patents
半導体パッケージ及びその製造方法 Download PDFInfo
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- JP2007180384A JP2007180384A JP2005378948A JP2005378948A JP2007180384A JP 2007180384 A JP2007180384 A JP 2007180384A JP 2005378948 A JP2005378948 A JP 2005378948A JP 2005378948 A JP2005378948 A JP 2005378948A JP 2007180384 A JP2007180384 A JP 2007180384A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910000679 solder Inorganic materials 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 20
- 229910052802 copper Inorganic materials 0.000 description 20
- 239000010949 copper Substances 0.000 description 20
- 239000011347 resin Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- 238000000465 moulding Methods 0.000 description 7
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 239000011344 liquid material Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract
【解決手段】この半導体パッケージは、多層プリント配線板12と、その表面上に実装されたICチップと、多層プリント配線板12の裏面上に実装された複数のバンプ端子16とを備える。バンプ端子16は、平面40を有する絶縁コア42と、平面40以外の表面上に形成された導電膜44とを含む。導電膜44の端面は絶縁コア42の周囲に環状に現れ、多層プリント配線板12の裏面に形成されている環状の接続パッド52にはんだ付けされる。バンプ端子16の真上にはビア36が形成され、内部配線パターン28,30にはビア36が通るクリアランスホール34が形成される。クリアランスホール34の径はバンプ端子16の径よりも小さくされる。
【選択図】図2
Description
12 多層プリント配線板
14 ICチップ
16,60,66,94 バンプ端子
20 絶縁基板
22 表面配線パターン
23,24,26,28,30 内部配線パターン
32 裏面配線パターン
34 クリアランスホール
36,38 ビア
40 平面
42,62,96 絶縁コア
44,64,68,98 導電膜
45 端面
50,56,58 ビアランド
52 接続パッド
70 バンプ端子成形型
72 凹部
74,76,92 銅膜
78 樹脂
90 絶縁棒
106 位置決め治具
108 貫通孔
Claims (11)
- プリント配線板と、
前記プリント配線板の表面上に実装された集積回路チップと、
前記プリント配線板の裏面上に実装された複数のバンプ端子とを備え、
前記バンプ端子の各々は、
前記プリント配線板の裏面に対向した平面を有する絶縁コアと、
前記絶縁コアの平面以外の表面上に形成され前記プリント配線板の裏面に接合された導電膜とを含むことを特徴とする半導体パッケージ。 - 請求項1に記載の半導体パッケージであって、
前記プリント配線板は、
絶縁基板と、
前記絶縁基板の表面上に形成され、前記集積回路チップと電気的に接続された表面配線パターンと、
前記絶縁基板内に埋設され、クリアランスホールを有する内部配線パターンと、
前記絶縁基板の裏面上に形成され、前記バンプ端子と電気的に接続された裏面配線パターンと、
前記裏面配線パターンと電気的に接続され、前記クリアランスホールを貫通するビアとを含むことを特徴とする半導体パッケージ。 - 請求項2に記載の半導体パッケージであって、
前記裏面配線パターンは、
前記絶縁コアの平面に対向する所定位置に形成され、前記裏面配線パターンと電気的に接続されたビアランドを含み、
前記ビア及び前記クリアランスホールは前記ビアランド上に配置されることを特徴とする半導体パッケージ。 - 請求項3に記載の半導体パッケージであって、
前記クリアランスホールのサイズは前記絶縁コアの平面のサイズよりも小さいことを特徴とする半導体パッケージ。 - プリント配線板と、前記プリント配線板の表面上に実装された集積回路チップとを備えた半導体パッケージに用いられるバンプ端子であって、
前記プリント配線板の裏面に対向すべき平面を有する絶縁コアと、
前記絶縁コアの平面以外の表面上に形成された導電膜とを備えたことを特徴とするバンプ端子。 - プリント配線板と、前記プリント配線板の表面上に実装された集積回路チップとを備えた半導体パッケージの製造方法であって、
前記プリント配線板を準備する工程と、
各々が、前記プリント配線板の裏面に対向すべき平面を有する絶縁コアと、前記絶縁コアの平面以外の表面上に形成された導電膜とを含む複数のバンプ端子を準備する工程と、
前記複数のバンプ端子を前記プリント配線板の裏面に実装する工程とを備えたことを特徴とする半導体パッケージの製造方法。 - 請求項6に記載の半導体パッケージの製造方法であって、
前記バンプ端子の準備工程は、
主面に複数の凹部が形成された型を準備する工程と、
前記凹部内側の表面上に導電膜を形成する工程と、
前記導電膜の形成後、前記凹部内に絶縁材料を充填する工程とを含むことを特徴とする半導体パッケージの製造方法。 - 請求項7に記載の半導体パッケージの製造方法であって、
前記バンプ端子の実装工程は、
前記プリント配線板の裏面及び前記絶縁コアの平面と同一平面上に現れる導電膜の端面のうち少なくとも一方にはんだを付着する工程と、
前記はんだの付着後、前記型の主面が前記プリント配線板の裏面に対向するように前記型と前記プリント配線板とを重ね合わせる工程と、
前記型と前記プリント配線板との重ね合わせ後、前記はんだを所定時間加熱する工程と、
前記加熱工程で溶融したはんだが固化した後、前記型を取り除く工程とを含むことを特徴とする半導体パッケージの製造方法。 - 請求項6に記載の半導体パッケージの製造方法であって、
前記バンプ端子の準備工程は、
絶縁棒を準備する工程と、
前記絶縁棒の側面上に導電膜を形成する工程と、
前記導電膜の形成後、前記絶縁棒を切断する工程とを含むことを特徴とする半導体パッケージの製造方法。 - 請求項9に記載の半導体パッケージの製造方法であって、
前記バンプ端子の実装工程は、
前記プリント配線板の裏面及び前記絶縁棒の切断面と同一平面上に現れる導電膜の端面のうち少なくとも一方にはんだを付着する工程と、
前記はんだの付着後、前記絶縁棒の切断面が前記プリント配線板の裏面に対向するように前記バンプ端子を前記プリント配線板の裏面上に載置する工程と、
前記バンプ端子の載置後、前記はんだを所定時間加熱する工程とを含むことを特徴とする半導体パッケージの製造方法。 - 請求項10に記載の半導体パッケージの製造方法であってさらに、
複数の貫通孔が形成された治具を準備する工程を含み、
前記バンプ端子の載置工程は、
前記プリント配線板の裏面上に前記治具を載置する工程と、
前記治具の載置後、前記貫通孔内に前記バンプ端子を嵌め込む工程とを含み、
前記製造方法はさらに、
前記加熱工程で溶融したはんだが固化した後、前記治具を取り除く工程を含むことを特徴とする半導体パッケージの製造方法。
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JP2005378948A JP4183199B2 (ja) | 2005-12-28 | 2005-12-28 | 半導体パッケージ及びその製造方法 |
CNB2006101446706A CN100444372C (zh) | 2005-12-28 | 2006-11-14 | 半导体封装及其制造方法 |
US11/567,804 US7484293B2 (en) | 2005-12-28 | 2006-12-07 | Semiconductor package and manufacturing method therefor |
US12/250,420 US20090047755A1 (en) | 2005-12-28 | 2008-10-13 | Semiconductor package and manufacturing method therefor |
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JP2008010848A (ja) * | 2006-06-01 | 2008-01-17 | Fujitsu Ltd | ビルドアップ基板、それを有する電子部品及び電子機器 |
JP2011138846A (ja) * | 2009-12-27 | 2011-07-14 | Kyocer Slc Technologies Corp | 配線基板 |
US8330256B2 (en) | 2008-11-18 | 2012-12-11 | Seiko Epson Corporation | Semiconductor device having through electrodes, a manufacturing method thereof, and an electronic apparatus |
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US8330256B2 (en) | 2008-11-18 | 2012-12-11 | Seiko Epson Corporation | Semiconductor device having through electrodes, a manufacturing method thereof, and an electronic apparatus |
US8796823B2 (en) | 2008-11-18 | 2014-08-05 | Seiko Epson Corporation | Semiconductor device having through electrodes, a manufacturing method thereof, and an electronic apparatus |
US9257404B2 (en) | 2008-11-18 | 2016-02-09 | Seiko Epson Corporation | Semiconductor device, having through electrodes, a manufacturing method thereof, and an electronic apparatus |
JP2011138846A (ja) * | 2009-12-27 | 2011-07-14 | Kyocer Slc Technologies Corp | 配線基板 |
JPWO2021131081A1 (ja) * | 2019-12-27 | 2021-07-01 | ||
JP7319724B2 (ja) | 2019-12-27 | 2023-08-02 | ボンドテック株式会社 | 接合方法および接合装置 |
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JP4183199B2 (ja) | 2008-11-19 |
CN100444372C (zh) | 2008-12-17 |
CN1992250A (zh) | 2007-07-04 |
US20090047755A1 (en) | 2009-02-19 |
US7484293B2 (en) | 2009-02-03 |
US20070145551A1 (en) | 2007-06-28 |
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