JP2006517057A - カプセルを有するモジュール構造の部品 - Google Patents
カプセルを有するモジュール構造の部品 Download PDFInfo
- Publication number
- JP2006517057A JP2006517057A JP2006500549A JP2006500549A JP2006517057A JP 2006517057 A JP2006517057 A JP 2006517057A JP 2006500549 A JP2006500549 A JP 2006500549A JP 2006500549 A JP2006500549 A JP 2006500549A JP 2006517057 A JP2006517057 A JP 2006517057A
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Abstract
Description
a)チップ&ワイヤ技術:チップが基板側を向くように実装し、ワイヤボンディングでコンタクトする。機械的安定性のためにチップは付加的に注入材料(例えばグローブトップ)によって包囲される。
b)フリップチップ技術:実装されたチップを注入材料(アンダフィラ/グローブトップ)によって機械的に安定となるように密封する。
Claims (21)
- 少なくとも2つの誘電層(DL)、少なくとも1つの集積回路素子(IE)、上表面の少なくとも1つの導体路構造体(LS)、下表面の少なくとも1つの外部コンタクト(AK)を備えた基板(SU)と、
基板表面に配置され、少なくとも1つの集積回路素子に電気的に接続された少なくとも1つの能動素子(CB)と、
少なくとも1つの素子を完全にカバーし、当該の素子を埃、湿分および機械的影響から保護する少なくとも1つのフィルムカバー(SF)とを有している
ことを特徴とする部品(BE)。 - 少なくとも1つの能動素子(CB)は少なくとも1つのダイオードまたは少なくとも1つのトランジスタを含む、請求項1記載の部品。
- 能動素子(CB)はマイクロ波チップ、ミリ波チップまたはICモジュールのいずれかから選択される、請求項1または2記載の部品。
- 前記ICモジュールはMMICモジュール(Monolithic Microwave Integrated Circuit Module)である、請求項3記載の部品。
- 少なくとも1つの能動素子はフリップチップ技術、ワイヤボンディング技術またはSMD技術により機械的かつ電気的に基板(SU)に接続されている、請求項1から4までのいずれか1項記載の部品。
- 少なくとも1つの受動素子は、コイル、キャパシタおよび抵抗を含む離散的な受動回路素子、またはコイル、キャパシタ、抵抗またはこれらの素子の任意の組み合わせから選択される少なくとも1つの素子を含むコンパクトな回路ブロックから選択される、請求項1から5までのいずれか1項記載の部品。
- 前記少なくとも1つの受動素子は少なくとも1つのフィルタまたはミキサ回路を含む、請求項1から6までのいずれか1項記載の部品。
- 少なくとも1つの能動素子(CB)は注入物質(GT)によって包囲されている、請求項1から7までのいずれか1項記載の部品。
- 基板(SU)はLTCCセラミック(Low Temperature Cofired Ceramic)またはHTCCセラミック(High Temperature Cofired Ceramic)から成る少なくとも2つの層を含む、請求項1から8までのいずれか1項記載の部品。
- 基板(SU)内の少なくとも1つの集積回路素子(IE)はインダクタンス、キャパシタンス、接続線路またはスルーコンタクト(DK)によって実現される垂直方向の信号伝達部から選択される、請求項1から9までのいずれか1項記載の部品。
- 少なくとも1つの集積回路素子(IE)は受動機能を備えた回路の少なくとも一部を形成している、請求項1から10までのいずれか1項記載の部品。
- 少なくとも1つの集積回路素子(IE)は適合化回路の少なくとも一部を形成している、請求項1から11までのいずれか1項記載の部品。
- 全ての信号線路が基板(SU)に埋め込まれている、請求項1から12までのいずれか1項記載の部品。
- 信号線路の少なくとも一部が基板(SU)の表面に配置されている、請求項1から12までのいずれか1項記載の部品。
- フィルムカバー(SF)はポリイミドから成る、請求項1から14までのいずれか1項記載の部品。
- フィルムカバー(SF)は金属から成る、請求項1から14までのいずれか1項記載の部品。
- フィルムカバー(SF)は表面の全ての素子を完全にカバーする、請求項1から16までのいずれか1項記載の部品。
- 複数の能動素子(CB)が設けられており、フィルムカバー(SF)は全ての能動素子を個別にカプセル化する、請求項1から17記載の部品。
- フィルムカバー(SF)は基板(SU)の表面に接続されており、フィルムカバー(SF)と個別の能動素子(CB)と基板(SU)とが閉鎖された中空室をなしており、チップと基板とを接続する電気線路がフィルムカバー(SF)に接触しないように閉鎖された中空室内に配置されている、請求項1から18までのいずれか1項記載の部品。
- 個別の能動素子(CB)はその一方側に、露出した少なくとも1つの能動の高々周波数構造体(HS)を有しており、該能動の高々周波数構造体(HS)はフィルムカバー(SF)に接触しないように閉鎖された中空室内に配置されている、請求項19記載の部品。
- 基板表面および素子表面に配置された高々周波数信号を伝達する全ての構造体は閉鎖された中空室内に配置されている、請求項19または20記載の部品。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10300958A DE10300958A1 (de) | 2003-01-13 | 2003-01-13 | Modul mit Verkapselung |
PCT/EP2004/000150 WO2004064152A2 (de) | 2003-01-13 | 2004-01-12 | Modular aufgebautes bauelement mit verkapselung |
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JP2006517057A true JP2006517057A (ja) | 2006-07-13 |
JP4603527B2 JP4603527B2 (ja) | 2010-12-22 |
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JP2006500549A Expired - Lifetime JP4603527B2 (ja) | 2003-01-13 | 2004-01-12 | カプセルを有するモジュール構造の部品 |
Country Status (5)
Country | Link |
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US (1) | US20060103003A1 (ja) |
JP (1) | JP4603527B2 (ja) |
DE (1) | DE10300958A1 (ja) |
FR (1) | FR2849956B1 (ja) |
WO (2) | WO2004064140A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006245098A (ja) * | 2005-03-01 | 2006-09-14 | Seiko Epson Corp | 電子部品及びその製造方法、並びに電子機器 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7294904B1 (en) * | 2005-02-10 | 2007-11-13 | Xilinx, Inc. | Integrated circuit package with improved return loss |
US7466143B2 (en) * | 2005-09-16 | 2008-12-16 | General Electric Company | Clearance measurement systems and methods of operation |
DE102006025162B3 (de) * | 2006-05-30 | 2008-01-31 | Epcos Ag | Flip-Chip-Bauelement und Verfahren zur Herstellung |
US7404331B2 (en) * | 2006-09-27 | 2008-07-29 | General Electric Company | Sensor assembly, transformers and methods of manufacture |
JP2008251608A (ja) * | 2007-03-29 | 2008-10-16 | Casio Comput Co Ltd | 半導体装置およびその製造方法 |
US8177474B2 (en) * | 2007-06-26 | 2012-05-15 | General Electric Company | System and method for turbine engine clearance control with rub detection |
JP5823219B2 (ja) * | 2011-09-08 | 2015-11-25 | 太陽誘電株式会社 | 電子部品 |
JP6491242B2 (ja) | 2014-03-14 | 2019-03-27 | スナップトラック・インコーポレーテッド | キャリアアグリゲーションモード用フロントエンドモジュール |
US9488719B2 (en) * | 2014-05-30 | 2016-11-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Automotive radar sub-system packaging for robustness |
DE102014115099B4 (de) * | 2014-10-16 | 2021-05-06 | Infineon Technologies Ag | Elektronisches Modul mit elektrisch isolierender Struktur mit Material mit niedrigem Elastizitätsmodul und Verfahren zur Herstellung eines elektronischen Moduls |
DE102015103149B4 (de) * | 2015-03-04 | 2024-06-06 | HELLA GmbH & Co. KGaA | Radarvorrichtung |
DE102016102742A1 (de) * | 2016-02-17 | 2017-08-17 | Snaptrack, Inc. | HF-Frontend für ein Automobilradarsystem |
US11244909B2 (en) * | 2020-03-12 | 2022-02-08 | Advanced Semiconductor Engineering, Inc. | Package structure and method for manufacturing the same |
US11605571B2 (en) * | 2020-05-29 | 2023-03-14 | Qualcomm Incorporated | Package comprising a substrate, an integrated device, and an encapsulation layer with undercut |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04502238A (ja) * | 1989-10-02 | 1992-04-16 | ヒューズ・エアクラフト・カンパニー | 3次元マイクロ回路構造およびそのセラミックテープからの製造方法 |
JP2001176995A (ja) * | 1999-10-15 | 2001-06-29 | Thomson Csf | 電子部品のパッケージ方法 |
JP2002290051A (ja) * | 2001-01-19 | 2002-10-04 | Matsushita Electric Ind Co Ltd | 部品内蔵モジュールとその製造方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3388465A (en) * | 1965-03-01 | 1968-06-18 | Burroughs Corp | Electronic assembly soldering process |
CA1226966A (en) * | 1985-09-10 | 1987-09-15 | Gabriel Marcantonio | Integrated circuit chip package |
JPH02186662A (ja) * | 1989-01-13 | 1990-07-20 | Hitachi Ltd | 弾性表面波素子パッケージ |
FR2666190B1 (fr) * | 1990-08-24 | 1996-07-12 | Thomson Csf | Procede et dispositif d'encapsulation hermetique de composants electroniques. |
US5049978A (en) * | 1990-09-10 | 1991-09-17 | General Electric Company | Conductively enclosed hybrid integrated circuit assembly using a silicon substrate |
JP3378338B2 (ja) * | 1994-03-01 | 2003-02-17 | 新光電気工業株式会社 | 半導体集積回路装置 |
US5639989A (en) * | 1994-04-19 | 1997-06-17 | Motorola Inc. | Shielded electronic component assembly and method for making the same |
EP0759231B1 (de) * | 1994-05-02 | 1998-12-23 | SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG | Verkapselung für elektronische bauelemente |
WO1997002596A1 (fr) * | 1995-06-30 | 1997-01-23 | Kabushiki Kaisha Toshiba | Composant electronique et son procede de fabrication |
US6137125A (en) * | 1995-12-21 | 2000-10-24 | The Whitaker Corporation | Two layer hermetic-like coating for on-wafer encapsulatuon of GaAs MMIC's having flip-chip bonding capabilities |
US5694300A (en) * | 1996-04-01 | 1997-12-02 | Northrop Grumman Corporation | Electromagnetically channelized microwave integrated circuit |
WO1997045955A1 (de) * | 1996-05-24 | 1997-12-04 | Siemens Matsushita Components Gmbh & Co. Kg | Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement |
JP3144345B2 (ja) * | 1997-06-27 | 2001-03-12 | 日本電気株式会社 | 弾性表面波チップの実装方法 |
US6150719A (en) * | 1997-07-28 | 2000-11-21 | General Electric Company | Amorphous hydrogenated carbon hermetic structure and fabrication method |
JPH1174403A (ja) * | 1997-08-28 | 1999-03-16 | Mitsubishi Electric Corp | 半導体装置 |
JP3132449B2 (ja) * | 1998-01-09 | 2001-02-05 | 日本電気株式会社 | 樹脂外装型半導体装置の製造方法 |
US6329739B1 (en) * | 1998-06-16 | 2001-12-11 | Oki Electric Industry Co., Ltd. | Surface-acoustic-wave device package and method for fabricating the same |
ATE331350T1 (de) * | 1999-07-02 | 2006-07-15 | Suisse Electronique Microtech | Adaptiver matrixsensor und elektrische schaltung hierzu |
JP2001024312A (ja) * | 1999-07-13 | 2001-01-26 | Taiyo Yuden Co Ltd | 電子装置の製造方法及び電子装置並びに樹脂充填方法 |
DE10002852A1 (de) * | 2000-01-24 | 2001-08-02 | Infineon Technologies Ag | Abschirmeinrichtung und elektrisches Bauteil mit einer Abschirmeinrichtung |
DE10016867A1 (de) * | 2000-04-05 | 2001-10-18 | Epcos Ag | Bauelement mit Beschriftung |
DE20011590U1 (de) * | 2000-07-03 | 2000-09-07 | Infineon Technologies Ag | Halbleiterchip-Modul mit Schutzfolie |
CN1254914C (zh) * | 2000-07-06 | 2006-05-03 | 株式会社东芝 | 声表面波器件及其生产方法 |
JP4422323B2 (ja) * | 2000-12-15 | 2010-02-24 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2002261177A (ja) * | 2001-02-27 | 2002-09-13 | Nec Corp | 高周波装置 |
DE10137619A1 (de) * | 2001-08-01 | 2003-02-27 | Infineon Technologies Ag | Abdeckelement für Baugruppen |
US6649446B1 (en) * | 2001-11-29 | 2003-11-18 | Clarisay, Inc. | Hermetic package for multiple contact-sensitive electronic devices and methods of manufacturing thereof |
DE10300956B3 (de) * | 2003-01-13 | 2004-07-15 | Epcos Ag | Bauelement mit Höchstfrequenzverbindungen in einem Substrat |
-
2003
- 2003-01-13 DE DE10300958A patent/DE10300958A1/de not_active Ceased
- 2003-12-16 WO PCT/EP2003/014346 patent/WO2004064140A1/de not_active Application Discontinuation
-
2004
- 2004-01-02 FR FR0400004A patent/FR2849956B1/fr not_active Expired - Fee Related
- 2004-01-12 JP JP2006500549A patent/JP4603527B2/ja not_active Expired - Lifetime
- 2004-01-12 WO PCT/EP2004/000150 patent/WO2004064152A2/de active Application Filing
- 2004-01-12 US US10/541,911 patent/US20060103003A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04502238A (ja) * | 1989-10-02 | 1992-04-16 | ヒューズ・エアクラフト・カンパニー | 3次元マイクロ回路構造およびそのセラミックテープからの製造方法 |
JP2001176995A (ja) * | 1999-10-15 | 2001-06-29 | Thomson Csf | 電子部品のパッケージ方法 |
JP2002290051A (ja) * | 2001-01-19 | 2002-10-04 | Matsushita Electric Ind Co Ltd | 部品内蔵モジュールとその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006245098A (ja) * | 2005-03-01 | 2006-09-14 | Seiko Epson Corp | 電子部品及びその製造方法、並びに電子機器 |
US7867830B2 (en) | 2005-03-01 | 2011-01-11 | Seiko Epson Corporation | Manufacturing method for electronic component with sealing film |
US8664730B2 (en) | 2005-03-01 | 2014-03-04 | Seiko Epson Corporation | Manufacturing method for electronic component, electronic component, and electronic equipment |
Also Published As
Publication number | Publication date |
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WO2004064152A2 (de) | 2004-07-29 |
FR2849956B1 (fr) | 2006-02-03 |
US20060103003A1 (en) | 2006-05-18 |
WO2004064140A1 (de) | 2004-07-29 |
FR2849956A1 (fr) | 2004-07-16 |
JP4603527B2 (ja) | 2010-12-22 |
WO2004064152A3 (de) | 2005-09-09 |
DE10300958A1 (de) | 2004-07-22 |
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