JP2006165380A - 可変容量コンデンサ - Google Patents
可変容量コンデンサ Download PDFInfo
- Publication number
- JP2006165380A JP2006165380A JP2004356707A JP2004356707A JP2006165380A JP 2006165380 A JP2006165380 A JP 2006165380A JP 2004356707 A JP2004356707 A JP 2004356707A JP 2004356707 A JP2004356707 A JP 2004356707A JP 2006165380 A JP2006165380 A JP 2006165380A
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- Prior art keywords
- lower electrode
- upper electrode
- electrode
- variable capacitor
- support member
- Prior art date
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- Pending
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- 239000003990 capacitor Substances 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 description 37
- 230000008569 process Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910003438 thallium oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
【解決手段】基板1上に下部電極2が形成され、下部電極2に対向させて上部電極4が配置され、下部電極2と上部電極4との間に、上部電極4を複数の可動領域に分けてそれぞれを下部電極2側に変位させるための絶縁性の支持部材3が配置されているとともに、下部電極2は、それぞれ少なくとも一部が可動領域に対向しており、可動領域を駆動するための制御電圧が印加される複数の第1の下部電極2aと、この第1の下部電極2aと分離されて少なくとも一部が可動領域に対向しており、可動領域との間で容量を形成する第2の下部電極2bとからなる可変容量コンデンサである。
【選択図】図1
Description
2 :下部電極
2a:第1の下部電極
2b:第2の下部電極
3 :支持部材
4 :上部電極
5 :孔
6 :誘電体
7 :犠牲層
Claims (3)
- 基板上に下部電極が形成され、該下部電極に対向させて上部電極が配置され、前記基板または前記下部電極と前記上部電極との間に、前記上部電極を複数の可動領域に分けてそれぞれを前記下部電極側に変位させるための絶縁性の支持部材が配置されているとともに、前記下部電極は、それぞれ少なくとも一部が前記可動領域に対向しており、前記可動領域を駆動するための制御電圧が印加される複数の第1の下部電極と、該第1の下部電極と分離されて少なくとも一部が前記可動領域に対向しており、前記可動領域との間で容量を形成する第2の下部電極とからなることを特徴とする可変容量コンデンサ。
- 前記上部電極の前記可動領域に孔が開いていることを特徴とする請求項1記載の可変容量コンデンサ。
- 前記可動領域の前記上部電極と前記第2の下部電極との間に誘電体が配置されていることを特徴とする請求項1記載の可変容量コンデンサ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004356707A JP2006165380A (ja) | 2004-12-09 | 2004-12-09 | 可変容量コンデンサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004356707A JP2006165380A (ja) | 2004-12-09 | 2004-12-09 | 可変容量コンデンサ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006165380A true JP2006165380A (ja) | 2006-06-22 |
Family
ID=36667039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004356707A Pending JP2006165380A (ja) | 2004-12-09 | 2004-12-09 | 可変容量コンデンサ |
Country Status (1)
Country | Link |
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JP (1) | JP2006165380A (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008053704A1 (fr) * | 2006-10-31 | 2008-05-08 | Advantest Corporation | Elément à capacité variable, résonateur et modulateur |
EP2093778A1 (en) * | 2008-02-20 | 2009-08-26 | Fujitsu Limited | Variable capacitor, matching circuit element, and mobile terminal apparatus |
US20110063773A1 (en) * | 2009-09-16 | 2011-03-17 | Kabushiki Kaisha Toshiba | Mems device |
WO2011158620A1 (ja) * | 2010-06-14 | 2011-12-22 | 株式会社村田製作所 | 可変容量装置 |
WO2011158619A1 (ja) * | 2010-06-14 | 2011-12-22 | 株式会社村田製作所 | 可変容量装置 |
JP2012023273A (ja) * | 2010-07-16 | 2012-02-02 | Fujitsu Ltd | 可変容量素子 |
WO2012170748A3 (en) * | 2011-06-07 | 2013-05-02 | Wispry, Inc. | Systems and methods for current density optimization in cmos-integrated mems capacitive devices |
JP2014150152A (ja) * | 2013-01-31 | 2014-08-21 | Renesas Electronics Corp | インダクタ装置及び半導体装置 |
CN111750905A (zh) * | 2019-03-29 | 2020-10-09 | 财团法人工业技术研究院 | 可调整感应电容值的微机电感测装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0821967A (ja) * | 1993-07-27 | 1996-01-23 | Texas Instr Inc <Ti> | 超小形モノリシック可変電気デバイスおよびそれを含む装置 |
JPH08213803A (ja) * | 1994-10-31 | 1996-08-20 | Texas Instr Inc <Ti> | 高周波信号用スイッチを含む移相器 |
JPH10149951A (ja) * | 1996-11-15 | 1998-06-02 | Murata Mfg Co Ltd | 可変容量コンデンサ |
JPH10267658A (ja) * | 1997-03-24 | 1998-10-09 | Nissan Motor Co Ltd | 振動型角速度センサ |
JP2003297671A (ja) * | 2002-03-22 | 2003-10-17 | Agilent Technol Inc | プレート懸架構造を有するマイクロマシン加工された平行板可変コンデンサ |
JP2004503313A (ja) * | 2000-06-15 | 2004-02-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 容量性マイクロマシン超音波振動子 |
JP2004130509A (ja) * | 2002-09-24 | 2004-04-30 | Eastman Kodak Co | 連続可変変位型マイクロエレクトロメカニカルデバイス |
JP2004172504A (ja) * | 2002-11-21 | 2004-06-17 | Fujitsu Media Device Kk | 可変キャパシタ、それを備えたパッケージ及び可変キャパシタの製造方法 |
-
2004
- 2004-12-09 JP JP2004356707A patent/JP2006165380A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0821967A (ja) * | 1993-07-27 | 1996-01-23 | Texas Instr Inc <Ti> | 超小形モノリシック可変電気デバイスおよびそれを含む装置 |
JPH08213803A (ja) * | 1994-10-31 | 1996-08-20 | Texas Instr Inc <Ti> | 高周波信号用スイッチを含む移相器 |
JPH10149951A (ja) * | 1996-11-15 | 1998-06-02 | Murata Mfg Co Ltd | 可変容量コンデンサ |
JPH10267658A (ja) * | 1997-03-24 | 1998-10-09 | Nissan Motor Co Ltd | 振動型角速度センサ |
JP2004503313A (ja) * | 2000-06-15 | 2004-02-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 容量性マイクロマシン超音波振動子 |
JP2003297671A (ja) * | 2002-03-22 | 2003-10-17 | Agilent Technol Inc | プレート懸架構造を有するマイクロマシン加工された平行板可変コンデンサ |
JP2004130509A (ja) * | 2002-09-24 | 2004-04-30 | Eastman Kodak Co | 連続可変変位型マイクロエレクトロメカニカルデバイス |
JP2004172504A (ja) * | 2002-11-21 | 2004-06-17 | Fujitsu Media Device Kk | 可変キャパシタ、それを備えたパッケージ及び可変キャパシタの製造方法 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008117813A (ja) * | 2006-10-31 | 2008-05-22 | Advantest Corp | 可変容量素子、共振器および変調器 |
WO2008053704A1 (fr) * | 2006-10-31 | 2008-05-08 | Advantest Corporation | Elément à capacité variable, résonateur et modulateur |
US7965491B2 (en) | 2006-10-31 | 2011-06-21 | Advantest Corporation | Variable capacitor, resonator and modulator |
CN101515503B (zh) * | 2008-02-20 | 2013-07-31 | 富士通株式会社 | 可变电容器、匹配电路元件和移动终端设备 |
EP2093778A1 (en) * | 2008-02-20 | 2009-08-26 | Fujitsu Limited | Variable capacitor, matching circuit element, and mobile terminal apparatus |
US8665579B2 (en) | 2008-02-20 | 2014-03-04 | Fujitsu Limited | Variable capacitor, matching circuit element, and mobile terminal apparatus |
US20110063773A1 (en) * | 2009-09-16 | 2011-03-17 | Kabushiki Kaisha Toshiba | Mems device |
US8503157B2 (en) * | 2009-09-16 | 2013-08-06 | Kabushiki Kaisha Toshiba | MEMS device |
WO2011158619A1 (ja) * | 2010-06-14 | 2011-12-22 | 株式会社村田製作所 | 可変容量装置 |
WO2011158620A1 (ja) * | 2010-06-14 | 2011-12-22 | 株式会社村田製作所 | 可変容量装置 |
JP2012023273A (ja) * | 2010-07-16 | 2012-02-02 | Fujitsu Ltd | 可変容量素子 |
WO2012170748A3 (en) * | 2011-06-07 | 2013-05-02 | Wispry, Inc. | Systems and methods for current density optimization in cmos-integrated mems capacitive devices |
US9019687B2 (en) | 2011-06-07 | 2015-04-28 | Wispry, Inc. | Systems and methods for current density optimization in CMOS-integrated MEMS capacitive devices |
JP2014150152A (ja) * | 2013-01-31 | 2014-08-21 | Renesas Electronics Corp | インダクタ装置及び半導体装置 |
CN111750905A (zh) * | 2019-03-29 | 2020-10-09 | 财团法人工业技术研究院 | 可调整感应电容值的微机电感测装置 |
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