JP2006147863A - 電子装置およびその製造方法 - Google Patents
電子装置およびその製造方法 Download PDFInfo
- Publication number
- JP2006147863A JP2006147863A JP2004336113A JP2004336113A JP2006147863A JP 2006147863 A JP2006147863 A JP 2006147863A JP 2004336113 A JP2004336113 A JP 2004336113A JP 2004336113 A JP2004336113 A JP 2004336113A JP 2006147863 A JP2006147863 A JP 2006147863A
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- Prior art keywords
- solder
- electronic device
- wiring board
- substrate
- wiring
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910000679 solder Inorganic materials 0.000 claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 238000000034 method Methods 0.000 claims abstract description 44
- 238000002844 melting Methods 0.000 claims abstract description 23
- 230000008018 melting Effects 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims description 42
- 229920005989 resin Polymers 0.000 claims description 42
- 238000007789 sealing Methods 0.000 claims description 13
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000010295 mobile communication Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 167
- BSFZSQRJGZHMMV-UHFFFAOYSA-N 1,2,3-trichloro-5-phenylbenzene Chemical compound ClC1=C(Cl)C(Cl)=CC(C=2C=CC=CC=2)=C1 BSFZSQRJGZHMMV-UHFFFAOYSA-N 0.000 abstract description 66
- 239000011162 core material Substances 0.000 abstract description 11
- 230000003321 amplification Effects 0.000 description 43
- 238000003199 nucleic acid amplification method Methods 0.000 description 43
- 239000003990 capacitor Substances 0.000 description 26
- 239000010949 copper Substances 0.000 description 21
- 230000005540 biological transmission Effects 0.000 description 14
- PHLXSNIEQIKENK-UHFFFAOYSA-N 2-[[2-[5-methyl-3-(trifluoromethyl)pyrazol-1-yl]acetyl]amino]-4,5,6,7-tetrahydro-1-benzothiophene-3-carboxamide Chemical compound CC1=CC(C(F)(F)F)=NN1CC(=O)NC1=C(C(N)=O)C(CCCC2)=C2S1 PHLXSNIEQIKENK-UHFFFAOYSA-N 0.000 description 12
- 101100230601 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) HBT1 gene Proteins 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 101100381996 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) BRO1 gene Proteins 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 229920001721 polyimide Polymers 0.000 description 8
- 239000009719 polyimide resin Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000001413 cellular effect Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 102100023593 Fibroblast growth factor receptor 1 Human genes 0.000 description 3
- 101000827746 Homo sapiens Fibroblast growth factor receptor 1 Proteins 0.000 description 3
- 101000851018 Homo sapiens Vascular endothelial growth factor receptor 1 Proteins 0.000 description 3
- 229910020220 Pb—Sn Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 102100033178 Vascular endothelial growth factor receptor 1 Human genes 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 101000685663 Homo sapiens Sodium/nucleoside cotransporter 1 Proteins 0.000 description 2
- 101000821827 Homo sapiens Sodium/nucleoside cotransporter 2 Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 102100023116 Sodium/nucleoside cotransporter 1 Human genes 0.000 description 2
- 102100021541 Sodium/nucleoside cotransporter 2 Human genes 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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Abstract
【解決手段】Pbフリー半田による単体チップ部品43、集積チップ部品44および半導体チップIC2の半田接続は、ヒートブロックを用いた280℃未満の温度の加熱処理により行い、高融点半田による半導体チップIC1の半田接続は、ホットジェットを用いた280℃以上の温度の加熱処理により行う。これにより、熱によるPCB38の損傷、例えばソルダーレジストの焦げやプリプレグのコア材からの剥離を生ずることなく、高融点半田を用いて半導体チップIC1をPCB38に半田接続できるので、半導体チップIC1を強い接続強度でPCB38上に搭載することができる。
【選択図】図8
Description
本実施の形態1では、例えばGSM方式のネットワークを利用して情報を伝送するデジタル携帯電話に本発明を適用した場合について説明する。
本実施の形態2である各表面実装部品を一括してモジュール基板に半田接続する実装行程の他の例を説明する。図20は、前記実施の形態1の図16に続く実装方法を説明する半導体装置の要部断面図である。
本実施の形態3である表面実装部品を一括してモジュール基板に半田接続する実装行程の他の例を説明する。図21は、前記実施の形態1の図16に続く実装方法を説明する半導体装置の要部断面図である。
本実施の形態4である各表面実装部品を一括してモジュール基板に半田接続する実装行程の他の例を説明する。図22は、前記実施の形態1の図16に続く実装方法を説明する半導体装置の要部断面図である。
2 ベースバンド回路
3 変復調用回路
4a,4b スイッチ回路
5 分波器
6 周辺回路
6A 制御回路
6B バイアス回路
6A1 電源制御回路
6A2 バイアス電圧生成回路
7a,7b 入力端子
8a,8b 出力端子
9a1〜9a5,9b1〜9b5,9c 伝送線路
10a,10b 入力端子
11a1〜11a3,11b1〜11b3 電源端子
12a,12b 出力端子
13 制御端子
14 絶縁膜
15b 下層電極
15t 上層電極
16a 酸化シリコン膜
16b 窒化シリコン膜
16c 酸化シリコン膜
16d ポリイミド樹脂膜
17 絶縁膜
18a〜18c 接続孔
20 ポリイミド樹脂膜
21 バンプ電極
22 メッキ層
23 ゲート絶縁膜
24 ゲート電極
25 n+型半導体領域
26a n−型半導体領域
26b n+型半導体領域
27a〜27d p++型半導体領域
28 サブコレクタ層
28a メサアイソレーション
29 コレクタ電極
30 コレクタメサ
31 ベースメサ
32 ベース電極
33 エミッタ層
34 エミッタ電極
35a,35b 接続孔
36a,36b,36c 接続孔
37b ベースバンプ電極
37c コレクタバンプ電極
37e エミッタバンプ電極
38 PCB
40a1,40a2,40b,40c 基板側端子
42G,42S 電極
43 単体チップ部品
44 集積チップ部品
45 樹脂
46 半田
47 放熱ビア
48,48a,48b,48c 半田
50 マザーボード
51 単体チップ部品
53 半田
56 コア材
57 内層用銅膜
58 プリプレグ
59 外層用銅膜
60 ソルダーレジスト
61 ビア
63 印刷用マスク
65 スキージ
66 ポッティングノズル
67 ヒートブロック
67a 凹部
68 ホットジェット
68a カバー
69 加重ピン
70 ヒータ
71 ブロック
A 電力増幅回路
A1〜A3 増幅段
AM1〜AM3 整合回路
ANT アンテナ
B 電力増幅回路
B1〜B3 増幅段
BL 裏面電極
BM1〜BM3 整合回路
BW ボンディングワイヤ
C,C1,C2,Cp1〜Cp3,Cm1〜Cm12 コンデンサ
Ca 上部電極
Cb 下部電極
CNT1,CNT2 切換信号
CSL 容量絶縁膜
EP エピタキシャル層
GND 接地電位
FLT1,FLT2 フィルタ
HBT1〜HBT3 ヘテロ接合型倍ポーラトランジスタ
IC1,IC2 半導体チップ
ID 集積チップ部品
L,Lp1〜Lp3 インダクタ
LPF1,LPF2 ロウパスフィルタ
M1 第1層配線
M2 第2層配線
M1b 第1ベース配線
M1c 第1コレクタ配線
M2b 第2ベース配線
M2c 第2コレクタ配線
M2e エミッタ配線
MA モジュール
MN1,MN2 インピーダンス整合回路
PL1〜PL6 プラグ
PM,PM1,PM2 電力増幅器
PWL ウエル
Qn,Qn1,Qn2 nMOS
S1〜S3 半導体基板
Claims (19)
- 電力増幅器回路を有する電子装置であって、
樹脂からなる第1配線基板と、
前記第1配線基板の主面上に搭載された、前記電力増幅回路を構成する能動部品と、
前記第1配線基板の主面上に搭載された受動部品とからなり、
前記能動部品の裏面には電極が形成され、
前記第1配線基板の主面上には第1基板側端子が形成され、
前記能動部品の裏面の電極と前記第1配線基板の第1基板側端子とは、鉛を含む第1半田によって接続されていることを特徴とする電子装置。 - 請求項1記載の電子装置において、前記第1半田は280℃以上の温度で溶融することを特徴とする電子装置。
- 請求項1記載の電子装置において、
前記受動部品は接続端子を有し、
前記第1配線基板の主面上には第2基板側端子が形成され、
前記受動部品の接続端子と前記第1配線基板の第2基板側端子とは、鉛を含まない第2半田によって接続されていることを特徴とする電子装置。 - 請求項3記載の電子装置において、前記受動部品の接続端子はバンプ電極であることを特徴とする電子装置。
- 請求項3記載の電子装置において、
前記能動部品および前記受動部品を覆う封止部と、
をさらに有し、
前記封止部は減圧した状態で樹脂により封止されることを特徴とする電子装置。 - 請求項5記載の電子装置において、前記樹脂の弾性率は、180℃以上の温度において2GPa以下であることを特徴とする電子装置。
- 請求項5記載の電子装置において、前記樹脂はエポキシ樹脂であることを特徴とする電子装置。
- 請求項1記載の電子装置において、
前記電子装置は、主面に電極を有する第2配線基板に搭載され、
前記第1配線基板の裏面には外部接続電極が形成され、
前記第2配線基板の電極と前記第1配線基板の外部接続電極とは第3半田を介して接続され、
前記第1半田の溶融温度は前記第3半田の溶融温度よりも高いことを特徴とする電子装置。 - 請求項1記載の電子装置において、
前記電子装置は、主面に電極を有する第2配線基板に搭載され、
前記第1配線基板の裏面には外部接続電極が形成され、
前記第2配線基板の電極と前記第1配線基板の外部接続電極とは第3半田を介して接続され、
前記第2半田の溶融温度は前記第3半田の溶融温度よりも低いことを特徴とする電子装置。 - 請求項9記載の電子装置において、
前記第3半田の使用量は前記第2半田の使用量よりも多いことを特徴とする電子装置。 - 請求項1記載の電子装置において、前記電力増幅回路は移動通信機器に搭載されることを特徴とする電子装置。
- 請求項11記載の電子装置において、前記電力増幅回路は、800MHz帯、900MHz帯、1800MHz帯または1900MHz帯で動作することを特徴とする電子装置。
- 電力増幅回路を有する電子装置の製造方法であって、
(a)樹脂からなる第1配線基板を準備する工程と、
(b)前記第1配線基板の第1面に形成された第1基板側端子上に、鉛を含む第1半田を介して能動部品を配置する工程と、
(c)前記第1配線基板の前記第1面に形成された第2基板側端子上に、鉛を含まない第2半田を介して受動部品を配置する工程と、
(d)第1温度で前記第1半田を溶融させて、前記能動部品を前記第1配線基板に接続し、第2温度で前記第2半田を溶融させて、前記受動部品を前記第1配線基板に接続する工程と、
(e)前記能動部品および前記受動部品を減圧状態で樹脂封止する工程と、
(f)第2配線基板を準備する工程と、
(g)前記第2配線基板の第1面に、第3半田を介して前記能動部品および前記受動部品を搭載する前記第1配線基板を配置する工程と、
(h)第3温度で前記第3半田を溶融させて、前記第1配線基板を前記第2配線基板に接続する工程と、
を有し、
前記第2温度が前記第1温度よりも低いことを特徴とする電子装置の製造方法。 - 電力増幅回路を有する電子装置の製造方法であって、
(a)樹脂からなる第1配線基板を準備する工程と、
(b)前記第1配線基板の第1面に形成された第1基板側端子上に、鉛を含む第1半田を介して能動部品を配置する工程と、
(c)前記第1配線基板の前記第1面に形成された第2基板側端子上に、鉛を含まない第2半田を介して受動部品を配置する工程と、
(d)第1温度で前記第1半田を溶融させて、前記能動部品を前記第1配線基板に接続し、第2温度で前記第2半田を溶融させて、前記受動部品を前記第1配線基板に接続する工程と、
(e)前記能動部品および前記受動部品を減圧状態で樹脂封止する工程と、
を有し、
前記(d)工程において、前記能動部品のみが局所加熱されることを特徴とする電子装置の製造方法。 - 請求項14記載の電子装置の製造方法において、前記第2半田は、前記能動部品の局所加熱の余熱により溶融して、前記受動部品が前記第1配線基板に接続することを特徴とする電子装置の製造方法。
- 請求項15記載の電子装置の製造方法において、前記能動部品は加重ピンに押さえられて局所加熱されることを特徴とする電子装置の製造方法。
- 請求項15記載の電子装置の製造方法において、前記能動部品はホットジェットからドライエアーを吹き付けることにより局所加熱されることを特徴とする電子装置の製造方法。
- 請求項14記載の電子装置の製造方法において、前記(d)工程では、前記第1配線基板をステージ上に載せた状態で前記第1および第2半田が溶融され、前記能動部品が配置された前記第1配線基板下の前記ステージには、凹部が形成されていることを特徴とする電子装置の製造方法。
- 請求項14記載の電子装置の製造方法において、前記能動部品が配置される前記第1配線基板には、前記第1面から第2面に貫通する放熱ビアが形成されていることを特徴とする電子装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004336113A JP4524454B2 (ja) | 2004-11-19 | 2004-11-19 | 電子装置およびその製造方法 |
US11/281,476 US7396701B2 (en) | 2004-11-19 | 2005-11-18 | Electronic device and manufacturing method of the same |
US12/137,869 US20080253100A1 (en) | 2004-11-19 | 2008-06-12 | Electronic device and manufacturing method of the same |
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US7396701B2 (en) | 2008-07-08 |
US20060110859A1 (en) | 2006-05-25 |
US20110183474A1 (en) | 2011-07-28 |
US20080253100A1 (en) | 2008-10-16 |
US8557633B2 (en) | 2013-10-15 |
JP4524454B2 (ja) | 2010-08-18 |
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