JP2006108620A - 導電性側壁スペーサを有する不揮発性メモリ装置及びその製造方法 - Google Patents
導電性側壁スペーサを有する不揮発性メモリ装置及びその製造方法 Download PDFInfo
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- 125000006850 spacer group Chemical group 0.000 title claims abstract description 144
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 150000004767 nitrides Chemical class 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- -1 spacer nitride Chemical class 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000010405 reoxidation reaction Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 description 6
- 102100025338 Calcium-binding tyrosine phosphorylation-regulated protein Human genes 0.000 description 5
- 101000664527 Homo sapiens Spastin Proteins 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 241000293849 Cordylanthus Species 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
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- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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Abstract
【解決手段】本発明に係る導電性側壁スペーサを有する不揮発性メモリ装置は、半導体基板21と、該半導体基板上のゲート絶縁膜22Aと、該ゲート絶縁膜上に形成されたゲート100と、該ゲートの両側壁に形成された一対の絶縁膜の側壁スペーサ28Aと、該一対の側壁スペーサ上に形成された、電荷を捕獲及び放出する一対の導電性側壁スペーサ29Bと、前記ゲートの両側壁、一対の前記側壁スペーサ及び導電性側壁スペーサの下の半導体基板内に形成された一対のLDD領域26と、前記ゲートの両側の、一対の前記導電性側壁スペーサの外側エッジ部を含む外側領域下の半導体基板内に形成されたソース/ドレイン領域30とを備える。
【選択図】図4
Description
最近、上述したようなフラッシュメモリの短所を克服するために、ソノス(Silicon-Oxide-Nitride-Oxide-Silicon、SONOS)構造を有するソノス型不揮発性メモリ装置に対する研究が活発に行われている。
12 ゲート絶縁膜
13 ゲート電極
14、15A、15B 側壁スペーサ
21 半導体基板
22、22A ゲート絶縁膜
22B バーズビーク
23 第1電極膜
24 第2電極膜
25 ハードマスク膜、ワードライン
26 LDD領域
27 再酸化側壁スペーサ(酸化膜)
28A 側壁スペーサ(窒化膜)
29A 初期の導電性側壁スペーサ
29B 導電性側壁スペーサ
30 ソース/ドレイン領域
31 スペーサ窒化膜
32 層間絶縁膜
33 ビットラインコンタクト
41 マスクパターン
100 ゲート構造
Claims (20)
- 半導体基板と、
前記半導体基板上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲートと、
前記ゲートの両側壁に形成された一対の側壁スペーサと、
一対の前記側壁スペーサ上に形成された、電荷をトラップ及びディトラップする一対の導電性側壁スペーサと、
前記ゲートの両側壁、一対の前記側壁スペーサ、及び一対の前記導電性側壁スペーサの下の前記半導体基板内に形成された一対のLDD領域と、
前記ゲートの両側の、一対の前記導電性側壁スペーサの外側エッジ部を含む外側領域下の前記半導体基板内に形成された、前記LDD領域と接続するソース/ドレイン領域と、を備えることを特徴とする不揮発性メモリ装置。 - 前記ゲートの両側壁に形成された一対の再酸化側壁スペーサをさらに備えることを特徴とする請求項1に記載の不揮発性メモリ装置。
- 前記導電性側壁スペーサが、ポリシリコンを用いて形成されることを特徴とする請求項1に記載の不揮発性メモリ装置。
- 前記導電性側壁スペーサが、ポリシリコンゲルマニウム膜、またはTi、W、Ta及びHfからなるグループから選択された低抵抗金属の膜、または前記低抵抗金属の窒化膜であることを特徴とする請求項1に記載の不揮発性メモリ装置。
- 前記導電性側壁スペーサが、前記ゲート及び前記側壁スペーサよりも低い高さを有するように形成されることを特徴とする請求項1に記載の不揮発性メモリ装置。
- 前記側壁スペーサが、窒化膜、酸化膜、または酸化膜と窒化膜の積層膜であることを特徴とする請求項1に記載の不揮発性メモリ装置。
- 前記側壁スペーサが、Hf、Zr、Al、Ta、Ti、Ce、Pt及びLaからなる群の中から選択された金属が含まれた窒化金属酸化物の膜、またはこれら窒化金属酸化物の積層膜であることを特徴とする請求項1に記載の不揮発性メモリ装置。
- 前記再酸化側壁スペーサが、ゲート再酸化工程によって形成されることを特徴とする請求項2に記載の不揮発性メモリ装置。
- 前記導電性側壁スペーサを含む前記半導体基板全面に形成されたスペーサ窒化膜と、
前記スペーサ窒化膜上に形成された層間絶縁膜と、
前記層間絶縁膜及び前記スペーサ窒化膜を貫通する複数のビットラインコンタクトと、をさらに備えることを特徴とする請求項1に記載の不揮発性メモリ装置。 - 半導体基板上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲートを形成する工程と、
前記ゲート外側の前記半導体基板内に一対のLDD領域を形成する工程と、
前記ゲートの両側壁の一部の上に一対の再酸化側壁スペーサを形成する工程と、
一対の前記再酸化側壁スペーサを含む前記ゲートの両側壁上に一対の側壁スペーサを形成し、前記側壁スペーサ上に、隣接する単位セル間で互いに絶縁される一対の導電性側壁スペーサを形成する工程と、
前記ゲートの両側の、一対の前記導電性側壁スペーサの外側エッジ部を含む外側領域下の前記半導体基板内に、前記LDD領域と接続するソース/ドレイン領域を形成する工程と、を含むことを特徴とする不揮発性メモリ装置の製造方法。 - 前記再酸化側壁スペーサを形成する工程が、ゲート再酸化工程によって行われることを特徴とする請求項10に記載の不揮発性メモリ装置の製造方法。
- 前記ゲート再酸化工程が、酸素(O2)、水素(H2)または水蒸気(H2O)の雰囲気、及び約700゜C〜900゜Cの温度の下で熱処理を利用して行われることを特徴とする請求項11に記載の不揮発性メモリ装置の製造方法。
- 前記ゲート再酸化工程が、前記ゲートを形成する工程で損傷された前記ゲート絶縁膜を回復させることを特徴とする請求項11に記載の不揮発性メモリ装置の製造方法。
- 前記側壁スペーサを形成し前記導電性側壁スペーサを形成する工程が、
前記ゲートを含む前記ゲート絶縁膜全面に絶縁膜を形成する工程と、
前記絶縁膜上に導電膜を形成する工程と、
前記ゲート絶縁膜の表面が露出されるまで前記導電膜と前記絶縁膜とを選択的にエッチングして前記側壁スペーサ、及び初期の導電性側壁スペーサを形成する工程と、
前記初期の導電性側壁スペーサ上にマスクパターンを形成する工程と、
前記マスクパターンによって露出された前記初期の導電性側壁スペーサを選択的にエッチングして、セルトランジスタが形成される部分にだけ前記導電性側壁スペーサとして残留させる工程と、をさらに含むことを特徴とする請求項10に記載の不揮発性メモリ装置の製造方法。 - 前記導電性側壁スペーサが、前記ゲート及び前記側壁スペーサよりも低い高さを有するように形成されることを特徴とする請求項14に記載の不揮発性メモリ装置の製造方法。
- 前記導電性側壁スペーサが、ポリシリコンを用いて形成されることを特徴とする請求項10に記載の不揮発性メモリ装置の製造方法。
- 前記導電性側壁スペーサが、ポリシリコンゲルマニウム膜、またはTi、W、Ta及びHfからなるグループから選択された低抵抗金属の膜、または前記低抵抗金属の窒化膜であることを特徴とする請求項10に記載の不揮発性メモリ装置の製造方法。
- 前記側壁スペーサが、窒化膜、酸化膜、または酸化膜と窒化膜の積層膜であることを特徴とする請求項10に記載の不揮発性メモリ装置の製造方法。
- 前記側壁スペーサが、Hf,Zr,Al,Ta,Ti,Ce、Pt及びLaからなる群の中から選択された金属が含まれた窒化金属酸化物の膜、またはこれら窒化金属酸化物の積層膜であることを特徴とする請求項10に記載の不揮発性メモリ装置の製造方法。
- 前記導電性側壁スペーサが、電荷がトラップ及びディトラップされる媒体として用いられることを特徴とする請求項10に記載の不揮発性メモリ装置の製造方法。
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KR100650369B1 (ko) | 2006-11-27 |
US7667253B2 (en) | 2010-02-23 |
DE102004063690A1 (de) | 2006-04-06 |
KR20060029327A (ko) | 2006-04-06 |
US20060073666A1 (en) | 2006-04-06 |
US7217624B2 (en) | 2007-05-15 |
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