JP2006066408A - ドライエッチング方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000001312 dry etching Methods 0.000 title claims abstract description 20
- 238000012545 processing Methods 0.000 claims abstract description 65
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 92
- 238000005530 etching Methods 0.000 claims description 63
- 230000009467 reduction Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000000460 chlorine Substances 0.000 claims description 12
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052794 bromium Inorganic materials 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 229910052734 helium Inorganic materials 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 44
- 230000008569 process Effects 0.000 description 32
- 150000002500 ions Chemical class 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000009966 trimming Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910014265 BrCl Inorganic materials 0.000 description 2
- CODNYICXDISAEA-UHFFFAOYSA-N bromine monochloride Chemical compound BrCl CODNYICXDISAEA-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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Abstract
【解決手段】パターンニングされたホトレジスト13によりシリコン窒化膜12のマスクを形成した後、ホトレジスト13をドライエッチングにより縮小させ、露出したシリコン窒化膜マスク12の角部分をエッチングすることで、シリコン窒化膜マスク12の角部分にラウンド形状を有する溝加工処理が可能となる半導体装置の製造方法。
【選択図】図2−2
Description
Claims (5)
- 半導体基板に溝及び穴の形成を行うドライエッチング方法であって、ホトレジストのパターンをもとにエッチングにてハードマスクを加工した後、エッチングによりホトレジストのパターンを縮小化してハードマスクの角部を露出させ、露出したハードマスクの角部分をエッチングによって独立してラウンド形状に加工することを特徴とするドライエッチング方法。
- 請求項1記載のドライエッチング方法において、ホトレジストパターンの縮小化は、塩素含有ガスまたは臭素含有ガスまたはCF4,CHF3,CH2F2等のフッ素含有ガスのいずれかに対して、酸素を1〜10%添加した混合ガスを用いたことを特徴とするドライエッチング方法。
- 請求項1記載のドライエッチング方法において、ホトレジストパターンの縮小化は、窒素,アルゴン,ヘリウム等の不活性ガスに対して、酸素を1〜10%添加した混合ガスを用いたことを特徴とするドライエッチング方法。
- 請求項1記載のドライエッチング方法において、ホトレジストパターンの縮小化は、塩素含有ガスまたは臭素含有ガスのハロゲン系ガスと、CF4,CHF3,CH2F2等のフッ素含有ガスと、窒素,アルゴン,ヘリウム等の不活性ガスの少なくとも2種類以上の混合ガスに対して、酸素を1〜10%添加した混合ガスを用いたことを特徴とするドライエッチング方法。
- 請求項1記載のドライエッチング方法において、ハードマスク角部分のラウンド形状加工は、塩素含有ガスまたは臭素含有ガスまたはCF4,CHF3,CH2F2等のフッ素含有ガスのうち少なくとも1種類以上のガス、もしくはこれに酸素または窒素,アルゴン,ヘリウム等の不活性ガスのいずれかのガスを添加したガスを用いたことを特徴とするドライエッチング方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004225668A JP4579611B2 (ja) | 2004-07-26 | 2004-08-02 | ドライエッチング方法 |
US10/928,266 US20060016781A1 (en) | 2004-07-26 | 2004-08-30 | Dry etching method |
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Application Number | Priority Date | Filing Date | Title |
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JP2004217390 | 2004-07-26 | ||
JP2004225668A JP4579611B2 (ja) | 2004-07-26 | 2004-08-02 | ドライエッチング方法 |
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JP2006066408A true JP2006066408A (ja) | 2006-03-09 |
JP4579611B2 JP4579611B2 (ja) | 2010-11-10 |
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JP2004225668A Expired - Fee Related JP4579611B2 (ja) | 2004-07-26 | 2004-08-02 | ドライエッチング方法 |
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US (1) | US20060016781A1 (ja) |
JP (1) | JP4579611B2 (ja) |
Cited By (83)
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JP2008251846A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi High-Technologies Corp | 半導体の製造方法 |
JP2010056389A (ja) * | 2008-08-29 | 2010-03-11 | Hitachi High-Technologies Corp | プラズマ処理方法 |
JP2013021197A (ja) * | 2011-07-13 | 2013-01-31 | Hitachi High-Technologies Corp | ドライエッチング方法 |
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