JP2006012961A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2006012961A JP2006012961A JP2004184806A JP2004184806A JP2006012961A JP 2006012961 A JP2006012961 A JP 2006012961A JP 2004184806 A JP2004184806 A JP 2004184806A JP 2004184806 A JP2004184806 A JP 2004184806A JP 2006012961 A JP2006012961 A JP 2006012961A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 47
- 229920005591 polysilicon Polymers 0.000 claims abstract description 47
- 239000012535 impurity Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 44
- 229910021332 silicide Inorganic materials 0.000 abstract description 42
- 230000009977 dual effect Effects 0.000 abstract description 18
- 230000006866 deterioration Effects 0.000 abstract description 16
- 230000007257 malfunction Effects 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/927—Electromigration resistant metallization
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】 半導体装置は、上部がシリサイド化されたゲート電極22を有するP型MOSトランジスタ100及びN型MOSトランジスタ200を備え、ゲート電極22におけるP型MOSトランジスタ100部分は、P型不純物が導入されたポリシリコンを含み、そのN型MOSトランジスタ200部分は、N型不純物が導入されたポリシリコンを含む。P型MOSトランジスタ100及びN型MOSトランジスタ200の互いのドレインは、シリサイド化されたポリシリコンを含む共有配線23により接続されている。共有配線23の線幅は、ゲート電極22の線幅よりも大きくなるように設定されている。
【選択図】 図3
Description
本発明の第1の実施形態について図面を参照しながら説明する。
以下、本発明の第2の実施形態について図面を参照しながら説明する。
200 N型MOSトランジスタ
10 半導体基板
11 素子分離領域
20 P型拡散領域
21 N型拡散領域
22 ゲート電極(デュアルゲート)
23 第2の共有配線(共有配線)
23a 配線下部
23b 配線上部
23A 第2の共有配線(共有配線)
30 コンタクトプラグ
31 入力信号用配線
32 電源配線
33 接地配線
34 出力信号用配線
35 第1の共有配線
36 第2の共有配線
37 信号配線
38 層間絶縁膜
40 境界線
Claims (7)
- P型不純物が導入されたシリコンを含む第1のゲート電極を有するP型MISトランジスタと、
N型不純物が導入されたシリコンを含む第2のゲート電極を有するN型MISトランジスタと、
前記P型MISトランジスタ及び前記N型MISトランジスタとを互いに接続し、電源電流又は接地電流の経路となり且つシリサイド化されたシリコンを含む共有配線とを備え、
前記第1のゲート電極及び前記第2のゲート電極は、上部をそれぞれシリサイド化されることにより互いに電気的に接続されており、
前記共有配線の線幅は、前記第1のゲート電極及び前記第2のゲート電極の線幅よりも大きく設定されていることを特徴とする半導体装置。 - 前記共有配線は、P型不純物が導入されたP型のポリシリコン又はノンドープのポリシリコンからなることを特徴とする請求項1に記載の半導体装置。
- 前記共有配線は、P型不純物が導入されたP型のポリシリコンからなるP型領域と、N型不純物が導入されたN型のポリシリコンからなるN型領域とにより構成されており、
前記P型領域の線幅は、前記第1のゲート電極及び前記第2のゲート電極の線幅よりも大きいことを特徴とする請求項1に記載の半導体装置。 - 前記第1のゲート電極及び前記第2のゲート電極は半導体基板上に形成され、
前記共有配線は、前記半導体基板上における前記第1のゲート電極及び前記第2のゲート電極の側方の領域に形成されており、
前記共有配線の上には絶縁膜を介在させた配線が形成されていることを特徴とする請求項1〜3のうちのいずれか1項に記載の半導体装置。 - 前記P型トランジスタのソースは電源線と接続され、前記N型トランジスタのソースは接地線と接続され、前記共有配線は前記P型トランジスタ及び前記N型トランジスタの互いのドレインと接続されることにより、前記第1のゲート電極及び前記第2のゲート電極はインバータ回路を構成することを特徴とする請求項1〜4のうちのいずれか1項に記載の半導体装置。
- 前記第1のゲート電極及び前記第2のゲート電極の線幅は0.15μm未満であり、前記共有配線の線幅は0.15μm以上であることを特徴とする請求項1〜5のうちのいずれか1項に記載の半導体装置。
- 前記共有配線の線幅は、前記第1のゲート電極及び前記第2のゲート電極の線幅の1.2倍以上であることを特徴とする請求項1〜5のうちのいずれか1項に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004184806A JP4054321B2 (ja) | 2004-06-23 | 2004-06-23 | 半導体装置 |
US11/033,729 US7518167B2 (en) | 2004-06-23 | 2005-01-13 | Semiconductor device |
CNB2005100788453A CN100514652C (zh) | 2004-06-23 | 2005-06-23 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004184806A JP4054321B2 (ja) | 2004-06-23 | 2004-06-23 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006012961A true JP2006012961A (ja) | 2006-01-12 |
JP4054321B2 JP4054321B2 (ja) | 2008-02-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004184806A Expired - Lifetime JP4054321B2 (ja) | 2004-06-23 | 2004-06-23 | 半導体装置 |
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US (1) | US7518167B2 (ja) |
JP (1) | JP4054321B2 (ja) |
CN (1) | CN100514652C (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4361886B2 (ja) * | 2005-02-24 | 2009-11-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路装置およびその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5586875A (en) | 1978-12-22 | 1980-07-01 | Nec Corp | Fluorescent display tube |
JPH10178107A (ja) * | 1996-12-09 | 1998-06-30 | Texas Instr Inc <Ti> | 接点ゲート構造と方法 |
US6160282A (en) * | 1998-04-21 | 2000-12-12 | Foveon, Inc. | CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance |
JP3160586B2 (ja) * | 1999-04-27 | 2001-04-25 | 松下電子工業株式会社 | Cmosインバータ及びそれを用いたスタンダードセル |
JP3737914B2 (ja) | 1999-09-02 | 2006-01-25 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
JP2001210726A (ja) * | 2000-01-24 | 2001-08-03 | Hitachi Ltd | 半導体装置及びその製造方法 |
US6713335B2 (en) * | 2002-08-22 | 2004-03-30 | Chartered Semiconductor Manufacturing Ltd. | Method of self-aligning a damascene gate structure to isolation regions |
-
2004
- 2004-06-23 JP JP2004184806A patent/JP4054321B2/ja not_active Expired - Lifetime
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2005
- 2005-01-13 US US11/033,729 patent/US7518167B2/en active Active
- 2005-06-23 CN CNB2005100788453A patent/CN100514652C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20050285205A1 (en) | 2005-12-29 |
CN1713382A (zh) | 2005-12-28 |
US7518167B2 (en) | 2009-04-14 |
JP4054321B2 (ja) | 2008-02-27 |
CN100514652C (zh) | 2009-07-15 |
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