JP2005519470A - 半導体ウェーハの乾式蝕刻方法 - Google Patents
半導体ウェーハの乾式蝕刻方法 Download PDFInfo
- Publication number
- JP2005519470A JP2005519470A JP2003573691A JP2003573691A JP2005519470A JP 2005519470 A JP2005519470 A JP 2005519470A JP 2003573691 A JP2003573691 A JP 2003573691A JP 2003573691 A JP2003573691 A JP 2003573691A JP 2005519470 A JP2005519470 A JP 2005519470A
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- JP
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- Prior art keywords
- semiconductor wafer
- plasma
- etching
- electrode
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000001312 dry etching Methods 0.000 title claims abstract description 22
- 238000001020 plasma etching Methods 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 claims 6
- 238000005530 etching Methods 0.000 abstract description 27
- 239000010419 fine particle Substances 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (1)
- 電力が印加される第1電極と接地された第2電極の間でプラズマを発生させ、半導体ウェーハを蝕刻する乾式蝕刻方法であって、
前記第1電極に前記半導体ウェーハ端部の底面部を接触させた状態でプラズマを発生させて、イオン化したプラズマ微粒子により前記半導体ウェーハ端部の上面部と側面部に対して反応性イオン蝕刻を行い、
前記第2電極に前記半導体ウェーハ端部の上面部を接触させた状態でプラズマを発生させて、ラジカル化したプラズマ微粒子により前記半導体ウェーハ端部の底面部と側面部に対してプラズマ蝕刻を行うことを特徴とする半導体ウェーハの乾式蝕刻方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0011397A KR100447891B1 (ko) | 2002-03-04 | 2002-03-04 | 반도체 웨이퍼의 건식 식각 방법 |
PCT/KR2002/000716 WO2003075334A1 (en) | 2002-03-04 | 2002-04-19 | Method for dry etching a semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005519470A true JP2005519470A (ja) | 2005-06-30 |
JP4387801B2 JP4387801B2 (ja) | 2009-12-24 |
Family
ID=27785968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003573691A Expired - Fee Related JP4387801B2 (ja) | 2002-03-04 | 2002-04-19 | 半導体ウェーハの乾式蝕刻方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7094698B2 (ja) |
JP (1) | JP4387801B2 (ja) |
KR (1) | KR100447891B1 (ja) |
AU (1) | AU2002253690A1 (ja) |
TW (1) | TWI227522B (ja) |
WO (1) | WO2003075334A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009540561A (ja) * | 2006-06-20 | 2009-11-19 | ソスル カンパニー, リミテッド | プラズマエッチングチャンバ |
JP2013522896A (ja) * | 2010-03-18 | 2013-06-13 | ソイテック | セミコンダクタオンインシュレータ型の基板の仕上げ処理方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006319043A (ja) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
KR101123003B1 (ko) * | 2005-08-04 | 2012-03-12 | 주성엔지니어링(주) | 플라즈마 처리 장치 |
US8083890B2 (en) * | 2005-09-27 | 2011-12-27 | Lam Research Corporation | Gas modulation to control edge exclusion in a bevel edge etching plasma chamber |
CN1978351A (zh) * | 2005-12-02 | 2007-06-13 | 鸿富锦精密工业(深圳)有限公司 | 一种模仁保护膜的去除装置及方法 |
US9184043B2 (en) * | 2006-05-24 | 2015-11-10 | Lam Research Corporation | Edge electrodes with dielectric covers |
KR100831576B1 (ko) * | 2006-12-27 | 2008-05-21 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US20130098390A1 (en) * | 2011-10-25 | 2013-04-25 | Infineon Technologies Ag | Device for processing a carrier and a method for processing a carrier |
US20140000810A1 (en) * | 2011-12-29 | 2014-01-02 | Mark A. Franklin | Plasma Activation System |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01175738A (ja) * | 1987-12-29 | 1989-07-12 | Sharp Corp | ドライエッチング装置 |
US5271798A (en) | 1993-03-29 | 1993-12-21 | Micron Technology, Inc. | Method for selective removal of a material from a wafer's alignment marks |
JPH07142449A (ja) * | 1993-11-22 | 1995-06-02 | Kawasaki Steel Corp | プラズマエッチング装置 |
US5795399A (en) * | 1994-06-30 | 1998-08-18 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing apparatus, method for removing reaction product, and method of suppressing deposition of reaction product |
KR0122876Y1 (ko) * | 1995-03-30 | 1999-02-18 | 문정환 | 반도체 장치의 플라즈마 식각장치 |
KR19980034188A (ko) * | 1996-11-05 | 1998-08-05 | 김광호 | 반도체 식각설비의 하측전극판 |
JP3987637B2 (ja) * | 1998-05-22 | 2007-10-10 | 東京エレクトロン株式会社 | エッチング方法 |
US6261406B1 (en) * | 1999-01-11 | 2001-07-17 | Lsi Logic Corporation | Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface |
KR100564554B1 (ko) * | 1999-08-26 | 2006-03-29 | 삼성전자주식회사 | 자기강화 반응성 이온 식각장치 |
KR100343286B1 (ko) * | 1999-11-05 | 2002-07-15 | 윤종용 | 웨이퍼 가장자리의 결함 요인 처리 방법 |
TW492100B (en) * | 2000-03-13 | 2002-06-21 | Disco Corp | Semiconductor wafer processing apparatus |
US6468889B1 (en) * | 2000-08-08 | 2002-10-22 | Advanced Micro Devices, Inc. | Backside contact for integrated circuit and method of forming same |
JP4717295B2 (ja) * | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | ドライエッチング装置及びエッチング方法 |
KR100439940B1 (ko) * | 2002-01-11 | 2004-07-12 | 주식회사 래디언테크 | 웨이퍼 에지 식각용 프로세스 모듈 |
KR100442194B1 (ko) * | 2002-03-04 | 2004-07-30 | 주식회사 씨싸이언스 | 웨이퍼 건식 식각용 전극 |
-
2002
- 2002-03-04 KR KR10-2002-0011397A patent/KR100447891B1/ko not_active IP Right Cessation
- 2002-04-19 WO PCT/KR2002/000716 patent/WO2003075334A1/en active Application Filing
- 2002-04-19 AU AU2002253690A patent/AU2002253690A1/en not_active Abandoned
- 2002-04-19 US US10/506,478 patent/US7094698B2/en not_active Expired - Fee Related
- 2002-04-19 JP JP2003573691A patent/JP4387801B2/ja not_active Expired - Fee Related
-
2003
- 2003-03-03 TW TW092104345A patent/TWI227522B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009540561A (ja) * | 2006-06-20 | 2009-11-19 | ソスル カンパニー, リミテッド | プラズマエッチングチャンバ |
KR101346081B1 (ko) * | 2006-06-20 | 2013-12-31 | 참엔지니어링(주) | 플라스마 에칭 챔버 |
JP2013522896A (ja) * | 2010-03-18 | 2013-06-13 | ソイテック | セミコンダクタオンインシュレータ型の基板の仕上げ処理方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2003075334A1 (en) | 2003-09-12 |
US7094698B2 (en) | 2006-08-22 |
TW200304182A (en) | 2003-09-16 |
JP4387801B2 (ja) | 2009-12-24 |
AU2002253690A1 (en) | 2003-09-16 |
US20050112878A1 (en) | 2005-05-26 |
TWI227522B (en) | 2005-02-01 |
KR20030072522A (ko) | 2003-09-15 |
KR100447891B1 (ko) | 2004-09-08 |
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