TWI658508B - 電漿處理方法 - Google Patents
電漿處理方法 Download PDFInfo
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- TWI658508B TWI658508B TW103135310A TW103135310A TWI658508B TW I658508 B TWI658508 B TW I658508B TW 103135310 A TW103135310 A TW 103135310A TW 103135310 A TW103135310 A TW 103135310A TW I658508 B TWI658508 B TW I658508B
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000009832 plasma treatment Methods 0.000 title claims description 11
- 239000007789 gas Substances 0.000 claims abstract description 93
- 238000005530 etching Methods 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 30
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 14
- 150000002367 halogens Chemical class 0.000 claims abstract description 14
- 238000003672 processing method Methods 0.000 claims abstract description 13
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000012805 post-processing Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 69
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 19
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 10
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 9
- 229910003481 amorphous carbon Inorganic materials 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/3105—After-treatment
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Abstract
本發明之課題在於提供一種電漿處理方法,可一邊保護底層、一邊將蝕刻含矽膜之際所產生之反應產物加以除去。
提供一種電漿處理方法,係使用形成有蝕刻圖案之蝕刻遮罩來對基板上所形成之含矽膜進行處理者;包含:除去製程,係將蝕刻該含矽膜之際所產生之反應產物利用從含鹵素、氫以及碳之第1氣體所生成之電漿來加以除去。
Description
本發明係關於一種電漿處理方法。
於半導體裝置之製程中,利用電漿蝕刻於半導體晶圓等基板形成微細圖案。此時,藉由電漿蝕刻,有時基板上的被蝕刻材料與電漿蝕刻所用反應氣體會反應,而主要於受蝕刻後之圖案的側壁部沉積反應產物。
此反應產物成為電漿蝕刻之際用以阻止蝕刻後圖案之側壁部蝕刻的保護膜。另一方面,若於此反應產物殘留之狀態下進行後製程之CVD(Chemical Vapor Deposition)膜之形成、配線形成等,有時反應產物會成為粒子之原因或配線不良之原因。因此,必須將主要沉積於圖案側壁部之反應產物加以除去。
例如,專利文獻1在反應產物之除去方法方面揭示了一種技術,係將形成有圖案之基板以稀氫氟酸水溶液來進行濕式蝕刻處理,於包含蝕刻面之全面處以含有OH或是H之有機材料膜被覆之後,藉由氧電漿進行電漿清洗。
先前技術文獻
專利文獻1 日本特開2007-73840號公報
但是,若將基板以稀氫氟酸水溶液來進行濕式蝕刻處理,於蝕刻後圖案之側壁部所沉積之反應產物受到除去之同時,於基板上所形成之底層也受到蝕刻,是以有時底層會受損。
是以,本發明之一目的係提供一種電漿處理方法,可一面保護底層、一面將蝕刻含矽膜之際所發生之反應產物加以除去。
本發明之一腹案係提供一種電漿處理方法,係使用形成有蝕刻圖案之蝕刻遮罩來對基板上所形成之含矽膜進行處理者;包含除去製程,係將蝕刻該含矽膜之際所產生之反應產物利用從含鹵素、氫以及碳之第1氣體所生成之電漿來加以除去。
依據一態樣,可提供一種電漿處理方法,可一面保護底層、一面將蝕刻含矽膜之際所發生之反應產物加以除去。
1‧‧‧電漿處理裝置
101‧‧‧TEOS膜
102‧‧‧多晶矽膜
103‧‧‧矽氧化膜
104‧‧‧非晶質碳膜
111‧‧‧SiBrO膜
112‧‧‧保護膜
113‧‧‧側壁部
圖1係一實施形態之電漿處理裝置之全體構成圖。
圖2係一實施形態之電漿處理方法之流程圖。
圖3係一實施形態之各製程之含矽膜之概略截面圖。
圖4係顯示一實施形態之沉積物組成之圖。
圖5係顯示一實施形態之TEOS以及多晶矽之蝕刻速率之圖。
以下,針對本發明之實施形態參見所附圖式來說明。此外,本說明書以及圖式中針對實質具有同一機能構成之構成要件,係賦予同一符號而省略重複說明。
(電漿處理裝置之全體構成)
首先,針對本發明之一實施形態之電漿處理裝置1之全體構成,參見圖1來說明。此處,舉出電容耦合型平行平板電漿處理裝置為例,針對電漿處理裝置1說明之。
電漿處理裝置1具有例如表面受陽極氧化處理過之鋁所構成之略圓筒狀之腔室10。腔室10係受到安全接地。
腔室10之底部經由陶瓷等所構成之絕緣板12而配置著圓柱狀晶座支撐台14,於晶座支撐台14之上設有例如鋁所構成之晶座16。晶座16也發揮下部電極功能,其上部載置作為被處理基板之半導體晶圓W。
於晶座16上面設有將半導體晶圓W以靜電力來吸附保持之靜電夾18。靜電夾18具有將導電膜所構成之電極20以一對的絕緣層或是絕緣片來夾持之構造。電極20電性連接著直流電源22。此外,受到來自直流電源22之直流電壓所生庫倫力等靜電力的作用,半導體晶圓W被吸附保持於靜電夾18。
於靜電夾18(半導體晶圓W)周圍在晶座16上面配置有用以提高蝕刻均勻性之例如矽所構成之導電性聚焦環24。於晶座16以及晶座支撐台14之側面設有例如由石英所構成之略圓筒狀內壁構件26。
於晶座支撐台14之內部、例如在圓周上設有冷媒室28。冷媒室28係從設置於外部之未圖示冷凝器單元經由配管30a、30b而被循環供給既定溫度的冷媒(例如冷卻水),可藉由冷媒的溫度來控制晶座16上之半導體晶圓W的處理溫度。
再者,來自未圖示之熱傳導氣體供給機構之熱傳導氣體例如氦(He)氣體係經由氣體供給線路32而被供給至靜電夾18上面與半導體晶圓W內面之間。
於晶座16之上方,以和晶座16成為對向的方式平行地設置有上部電極34,上部電極34以及晶座16之間的空間成為電漿生成空間。上部電極34係和晶座16上之半導體晶圓W相對向而形成與電漿生成空間相接之面(亦即對向面)。
上部電極34經由絕緣性遮蔽構件42而被支撐於腔室10之上部。此外,上部電極34係由電極板36(構成相對於晶座16之對向面,且具有多數氣體噴出孔37)以及電極支撐體38(將電極板36裝卸自如地加以支撐)所構成。電極支撐體38具有由導電性材料(例如表面經過陽極氧化處理之鋁)所構成之水冷構造。
於電極支撐體38之內部設有氣體擴散室40,和氣體噴出孔37連通之多數氣體通流孔41從氣體擴散室40往下方延伸。於電極支撐體38形成有將氣體導至氣體擴散室40之氣體導入口62。氣體導入口62連接著氣體供給管64,氣體供給管64則連接著氣體供給源66。
於氣體供給管64從上游側依序設有質流控制器(MFC)68以及開閉閥70。此外,來自氣體供給源66之蝕刻用氣體係從氣體供給管64到氣體擴散室40,經由氣體通流孔41以及氣體噴出孔37以淋灑狀噴出至電漿生成空間。亦即,上部電極34發揮用以供給氣體之淋灑頭功能。
上部電極34經由第1匹配器46以及供電棒44而電性連接著第1高頻電源48。第1高頻電源48輸出例如60MHz之電漿生成用高頻電力。
第1匹配器46係用以使得負荷阻抗匹配於第1高頻電源48之內部(或是輸出)阻抗者。亦即,第1匹配器46在腔室10內生成電漿時以第1高頻電源48之輸出阻抗與負荷阻抗表觀上一致的方式作用。第1匹配器46之輸出端子連接於供電棒44之上端。
以從腔室10之側壁延伸至較上部電極34之高度位置來得上方的方式設有略圓筒狀之接地導體10a。接地導體10a之頂壁部分係利用筒狀絕緣構件44a而相對於供電棒44受到電絕緣。
晶座16經由第2匹配器88而電性連接著第2高頻電源90。第2高頻電源90輸出300kHz~13.56MHz範圍內之離子拉引(偏壓)用頻率(例如13.56MHz)之高頻電力。藉由從此第2高頻電源90對晶座16供給高頻電力,離子被拉引至半導體晶圓W側。
第2匹配器88乃用以使得負荷阻抗匹配於第2高頻電源90之內部(或是輸出)阻抗。亦即,第2匹配器88在腔室10內生成電漿時以第2高頻電源90之內部阻抗與負荷阻抗表觀上一致的方式作用。
上部電極34電性連接著低通濾波器(LPF)92,來自第1高頻電源48之高頻無法通過而來自第2高頻電源90之高頻則可通往接地。
LPF92較佳係以LR濾波器或是LC濾波器所構成,但即使僅是1根導線,由於也可對來自第1高頻電源48之高頻供應充分大的電抗,故亦可為1根導線。另一方面,於晶座16電性連接著用以使得來自第1高頻電源48之高頻通往接地之高通濾波器(HPF)94。
於腔室10之底部設有排氣口80,排氣口80經由排氣管82連接著排氣裝置84。排氣裝置84例如具有渦輪分子泵等真空泵,可將腔室10內減壓至所希望之真空度。
此外,於腔室10之側壁設有半導體晶圓W之搬出入口85,搬出入口85可藉由閘閥86來開閉。
此外,沿著腔室10之內壁以裝卸自如方式設有防止蝕刻副產物(沉積物)附著於腔室10之沉積屏蔽件11。亦即,沉積屏蔽件11構成腔室壁。此外,沉積屏蔽件11也設於內壁構件26之外周。
於腔室10之底部的腔室壁側之沉積屏蔽件11與內壁構件26側之沉積屏蔽件11之間設有排氣板83。在沉積屏蔽件11以及排氣板83方面可適宜使用於鋁被覆著氧化釔(Y2O3)等陶瓷者。
電漿處理裝置1之各構成部係連接於控制部95而受到控制。控制部95連接著由製程管理者為了管理電漿處理裝置1而進行指令輸入操作等之鍵盤、以及對電漿處理裝置1之運轉狀況進行視覺化顯示之顯示器等所構成之使用者介面96。
再者,控制部95連接著記憶部97,其儲存有用以實現在電漿處理裝置1所實行之各種處理的控制程式、或是用以因應於處理條件而在電漿處理裝置1之各構成部實行處理之程式(亦即配方)。
配方可儲存於硬碟、半導體記憶體,也可在被收容於可由CDROM、DVD等可攜式電腦所讀取之記憶媒體的狀態下被安置於記憶部97之既定位置。
此外,若因應必要性而基於來自使用者介面96之指示等而從記憶部97呼叫任意配方而於控制部95實行,則可在控制部95之控制下進行電漿處理裝置1所希望之處理。此外,本發明之實施形態所述電漿處理裝置1包含此控制部95。
藉由以此方式構成之電漿處理裝置1來進行後述圖2所示電漿處理。
該情況下,首先,開啟閘閥86,經由搬出入口85將作為蝕刻對象之半導體晶圓W搬入腔室10內,載置於晶座16上。其次,以控制部95來控制各部,藉此,氣體、高頻電力被供給至腔室10內,而生成所希望之電漿。可藉由所生成之電漿作用來實行所希望之電漿處理,而於半導體晶圓W形成所希望之圖案。
以上,針對本實施形態之電漿處理裝置1之全體構成來說明。
(電漿處理方法)
其次,參見圖2~圖5來說明使用上述本實施形態之電漿處理裝置1之電漿處理方法之一實施形態。
圖2顯示本實施形態之電漿處理方法之流程圖。
本實施形態之電漿處理方法,如圖2所示般,為使用形成有蝕刻圖案之蝕刻遮罩來處理含矽膜之方法,包含有蝕刻製程(S1)、除去製程(S2)、後製程(S3)這3製程。
S1為利用從含鹵素之第2氣體所生成之電漿來蝕刻含矽膜之製程。
S2為將在S1蝕刻含矽膜之際所生成之反應產物利用從含鹵素、氫(H2)以及碳(C)之第1氣體所生成之電漿來加以除去之製程。
S3為在S2除去反應產物後,利用從含有氧(O2)之第3氣體所生成之電漿來除去蝕刻遮罩之製程。
此外,本實施形態中,係舉出在半導體晶圓W上形成有TEOS(TetraEthOxySilane)膜101、多晶矽膜102、矽氧化膜103以及非晶質碳膜104之情況為一例來說明。
多晶矽膜102為含矽膜之一例,非晶質碳膜104為事先形成有所希望之蝕刻圖案之蝕刻遮罩之一例。
此外,蝕刻多晶矽膜102之際所使用之第2氣體係使用了含溴化氫(HBr)、He以及O2之混合氣體。此外,除去反應產物之際所使用之第1氣體係使用了含四氟甲烷(CF4)以及H2之混合氣體。此外,除去非晶質碳膜104之際所使用之氣體係使用了O2氣體。
以下,針對S1至S3之3製程依序說明。
〔含矽膜之蝕刻製程S1〕
S1係將含矽膜(多晶矽膜102)蝕刻為所希望之圖案。
首先,對於載置於晶座16上之半導體晶圓W,從氣體供給源66供給含有HBr、He以及O2之混合氣體。此時,混合氣體之流量比以HBr/He/O2=400~600/350~530/7~11sccm為佳。
其次,從第1高頻電源48供給60MHz之電漿生成用高頻電力。此外,從第2高頻電源90供給13.56MHz之離子拉引用高頻電力。
藉此,如圖3(A)所示般,多晶矽膜102被蝕刻為非晶質碳膜104之圖案。此外,同時,於圖案之側壁部113(多晶矽膜102、矽氧化膜103以及非晶質碳膜104之側壁部)以及非晶質碳膜104之上部沉積溴化氧化矽(SiBrO)膜111之反應產物。
於圖案側壁部113所形成之SiBrO膜111可抑制圖案側壁部113受到過度蝕刻,而選擇性進行深度方向之蝕刻。
此時,由於以HBr氣體為主而主要以化學性反應進行蝕刻,且從不含碳之第2氣體來生成電漿,故於圖案之側壁部113以及多晶矽膜102之表面不會形成碳鍵結(C-C)所致保護膜112。
從而,S1中能以高的高寬比(縱橫比)來蝕刻多晶矽膜102。
此外,關於含矽膜之蝕刻製程S1中的程序條件(壓力、高頻電力之頻率、功率、氣體流量、處理時間等),業界人士可依據所使用之反應氣體種類、含矽膜之種類等來適宜選擇。
〔反應產物之除去製程S2〕
S2係對於利用S1而被蝕刻為所希望之圖案的多晶矽膜102,將在該圖案側壁部113所沉積之反應產物(SiBrO膜111)予以除去。
首先,從氣體供給源66供給含CF4以及H2之混合氣體。此時,混合氣體之流量比以CF4/H2=80~120/160~240sccm為佳。
其次,從第1高頻電源48供給60MHz之高頻電力。藉此,如圖3(B)所示般,可在TEOS膜101、多晶矽膜102未受蝕刻的情況下將沉積於圖案側壁部113之SiBrO膜111加以除去。
此外,S2中,係將S1中利用第2高頻電源90施加於晶座16之離子拉引用高頻電力之供給加以停止,而成為不施加高頻電力之程序條件。藉此,由於可減小離子在電漿中之加速電壓,故對於形成在半導體晶圓W上之TEOS膜101、多晶矽膜102之離子損傷變小。
以下,針對S2之效果來和電漿處理之機制一同說明。
一般,若利用從含鹵素氣體所生成之電漿來進行基板蝕刻,則於側壁部會沉積保護膜,阻止側壁部之蝕刻,而主要往深度方向進行蝕刻。側壁部之保護膜能以稀氫氟酸水溶液等濕式蝕刻來除去。
但是,若基板以稀氫氟酸水溶液來進行濕式蝕刻處理,則沉積於側壁部之反應產物受到除去之同時,由於底層也受到蝕刻,故有時底層會受損。此外,由於S1所示含矽膜之蝕刻與反應產物之除去必須於不同裝置來進行,故生產量會降低,製造成本會增加。
另一方面,本實施形態之電漿處理方法,於蝕刻多晶矽膜102之際所產生之SiBrO膜111係利用從含鹵素、氫以及碳之第1氣體所生成之電漿來除去。
S2中,可藉由在SiBrO膜111與從前述第1氣體所生成之電漿之間發生後述化學反應而一邊保護TEOS膜101、一邊將蝕刻多晶矽膜102之際所生成之SiBrO膜111加以除去。
圖4乃PR(Photo Resist)利用從CF4氣體或是CF4與H2之混合氣體所生成之電漿來進行電漿處理後,沉積於PR上之沉積物以XPS(X-ray Photoelectron Spectroscopy)分析之結果。
如圖4所示般,若PR以從CF4與H2之混合氣體所生成之電漿來進行電漿處理,則相較於僅以CF4氣體所生成之電漿來對PR進行電漿處理之情況,沉積物中所含C比例大、F比例小。
亦即,作為第1氣體之CF4與H2之混合氣體在電漿中受電子衝撞解離之影響,會發生(1)所示化學反應。
上述反應所生成之各種電漿中之原子以及分子和反應產物之間會進行以下之反應。
亦即,圖3(A)中沉積於圖案側壁部113之SiBrO膜111會如化學反應式(2)所示般被H自由基所還原而生成溴化矽(SiBr)。SiBr如化學反應式(3)所示會和CFx自由基產生反應,而如圖3(B)所示般,以揮發性SiF氣體的形式從圖案側壁部113脫離,從腔室10受到排氣。
另一方面,於(1)所形成之C-C會沉積於TEOS膜101之表面以及圖案側壁部113來形成保護膜112,以抑制TEOS膜101之表面以及圖案側壁部113因CFx自由基而被蝕刻。
亦即,由於SiBrO膜111之除去後所沉積之含碳鍵結(C-C)之保護膜112,故TEOS膜101之表面以及多晶矽膜102之表面幾乎不會因CFx自由基而被蝕刻。
圖5(A)以及(B)分別顯示於基板上所形成之TEOS膜101以及多晶矽膜102以從CF4與H2之混合氣體所生成之電漿來進行電漿處理之情況之蝕刻速率。此外,圖5中,橫軸表示基板位置,縱軸分別表示TEOS膜101以及多晶矽膜102之蝕刻速率。
此外,範例之Xaxis、Yaxis、Vaxis以及Waxis分別表示於半導體晶圓W任意選擇之一徑向。
如圖5(A)以及(B)所示般,TEOS膜101以及多晶矽膜102不論採基板面內任一方向都可藉由從CF4與H2之混合氣體所生成之電漿之作用而幾乎未被蝕刻。
從以上可知,於反應產物之除去製程S2中,可一邊保護底層(TEOS膜101)、一邊除去在蝕刻含矽膜(多晶矽膜102)之際所生反應產物(SiBrO膜111)。
此外,由於含矽膜之蝕刻製程S1與反應產物之除去製程S2可在同一裝置進行,而可提高生產量、降低製造成本。
〔蝕刻遮罩之除去製程S3〕
S3中係利用從含氧(O2)之第3氣體所生成之電漿來將蝕刻遮罩(非晶質碳膜104)以及含碳鍵結(C-C)之保護膜112予以除去。
首先,藉由S2而對於除去了SiBrO膜111之多晶矽膜102從氣體供給源66供給O2氣體。此時,O2氣體之流量以280~420sccm為佳。
其次,從第1高頻電源48供給60MHz之高頻電力,從第2高頻電源90供給13.56MHz之高頻電力。藉此,如圖3(C)所示般,矽氧化膜103、非晶質碳膜104以及保護膜112被除去,形成具有所希望之圖案的多晶矽膜102。
以上,針對使用電漿處理裝置1之電漿處理方法以實施例來說明,但本發明不限定於上述實施例,可於本發明之範圍內進行各種變形以及改良。
例如,於含矽膜之蝕刻製程S1所使用之蝕刻氣體不限於上述實施形態說明時所使用之HBr、He以及O2之混合氣體,只要為含鹵素氣體可為任意氣體。含鹵素氣體之一例可為CF4、六氟化硫(SF6)、三氟化氮(NF3)、氯(Cl2),亦可為此等含鹵素氣體之混合氣體。
若蝕刻氣體使用含鹵素氣體,則被蝕刻材料可成為揮發性高之鹵素化合物而除去。
此外,含鹵素氣體在使用Cl2之情況雖取代SiBrO而改生成SiClO作為反應產物,不過能以和本實施形態同樣方法來除去。
此外,反應產物之除去製程S2所使用之處理氣體不限定於上述實施形態說明時所使用之CF4以及H2之混合氣體,只要是至少含有鹵素、氫以及碳之氣體則可為任意氣體。較佳為使用氟碳氣體與氫、或是氫氟碳氣體與氫之混合氣體。更佳為,氟碳氣體以及氫氟碳氣體使用CF4、二氟甲烷(CH2F2)、氟甲烷(CH3F)之至少一者之混合氣體。
此外,本發明之電漿產生機構可使用電容耦合型電漿(CCP:Capacitively Coupled Plasma)產生機構、感應耦合型電漿(ICP:Inductively Coupled Plasma)產生機構、螺旋波激發型電漿(HWP:Helicon Wave Plasma)產生機構、包含從輻線狹縫天線(RLSA:Radial Line Slot Antenna)所生成之微波電漿或SPA(Slot Plane Antenna)電漿之微波激發表面波電漿產生機構、電子迴旋共振電漿(ECR:Electron Cyclotron Resonance Plasma)產生機構、使用上述產生機構之遠控電漿產生機構等。
此外,基板不限於半導體晶圓W,也可為平面面板顯示器用大型基板、太陽電池用基板等。
Claims (6)
- 一種電漿處理方法,係使用形成有蝕刻圖案之蝕刻遮罩來對基板上所形成之含矽膜進行處理者;包含:除去製程,係將蝕刻該含矽膜之際所產生之反應產物利用從含鹵素、氫以及碳之第1氣體所生成之電漿來加以除去;以及後製程,係於該除去製程後,利用從含氧之第3氣體所生成之電漿來除去該蝕刻遮罩;該第1氣體係流量比為80~120:160~240sccm之CF4與H2的混合氣體;該第3氣體係流量為280~420sccm之O2氣體。
- 如申請專利範圍第1項之電漿處理方法,包含蝕刻製程,係利用從含鹵素之第2氣體所生成之電漿來蝕刻該含矽膜;該除去製程係將該蝕刻製程中所產生之反應產物加以除去。
- 如申請專利範圍第1或2項之電漿處理方法,其中該第1氣體係氟碳氣體與氫、或是氫氟碳氣體與氫。
- 如申請專利範圍第3項之電漿處理方法,其中該氟碳氣體以及氫氟碳氣體係CF4、CH2F2以及CH3F之至少一者。
- 如申請專利範圍第2項之電漿處理方法,其中該第2氣體係不含碳之氣體。
- 如申請專利範圍第2項之電漿處理方法,其中該除去製程係於該蝕刻製程中,將對於載置該基板之晶座已施加之離子拉引用高頻電力之供給加以停止。
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