JP2005509693A - シンナー組成物 - Google Patents
シンナー組成物 Download PDFInfo
- Publication number
- JP2005509693A JP2005509693A JP2003544532A JP2003544532A JP2005509693A JP 2005509693 A JP2005509693 A JP 2005509693A JP 2003544532 A JP2003544532 A JP 2003544532A JP 2003544532 A JP2003544532 A JP 2003544532A JP 2005509693 A JP2005509693 A JP 2005509693A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- resist
- thinner composition
- ether
- sodium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000003960 organic solvent Substances 0.000 claims abstract description 15
- 150000001412 amines Chemical class 0.000 claims abstract description 14
- 239000003513 alkali Substances 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 9
- 239000004094 surface-active agent Substances 0.000 claims abstract description 9
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 11
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- ZPIRTVJRHUMMOI-UHFFFAOYSA-N octoxybenzene Chemical compound CCCCCCCCOC1=CC=CC=C1 ZPIRTVJRHUMMOI-UHFFFAOYSA-N 0.000 claims description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 6
- -1 sodium alkyl sulfate Chemical class 0.000 claims description 6
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims description 4
- 239000004115 Sodium Silicate Substances 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 4
- 239000001488 sodium phosphate Substances 0.000 claims description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 4
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 4
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 claims description 3
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 3
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 3
- XDFGPVSVSMWVQE-UHFFFAOYSA-M sodium;dodecanoic acid;hydrogen sulfate Chemical group [Na+].OS([O-])(=O)=O.CCCCCCCCCCCC(O)=O XDFGPVSVSMWVQE-UHFFFAOYSA-M 0.000 claims description 3
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 2
- PJEXUIKBGBSHBS-UHFFFAOYSA-N 1-(hydroxymethyl)pyrrolidin-2-one Chemical compound OCN1CCCC1=O PJEXUIKBGBSHBS-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 claims description 2
- LCVQGUBLIVKPAI-UHFFFAOYSA-N 2-(2-phenoxypropoxy)propan-1-ol Chemical compound OCC(C)OCC(C)OC1=CC=CC=C1 LCVQGUBLIVKPAI-UHFFFAOYSA-N 0.000 claims description 2
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical group OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 2
- OYQUCYCSSADEIC-UHFFFAOYSA-N 4-phenoxybutan-1-ol Chemical compound OCCCCOC1=CC=CC=C1 OYQUCYCSSADEIC-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 16
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 22
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 6
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- WGYZMNBUZFHYRX-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-ol Chemical compound COCC(C)OCC(C)O WGYZMNBUZFHYRX-UHFFFAOYSA-N 0.000 description 1
- GODZNYBQGNSJJN-UHFFFAOYSA-N 1-aminoethane-1,2-diol Chemical compound NC(O)CO GODZNYBQGNSJJN-UHFFFAOYSA-N 0.000 description 1
- CUNYTKVXYZYERK-UHFFFAOYSA-N 6-(2-prop-2-ynoxyphenyl)hexanoic acid Chemical compound OC(=O)CCCCCC1=CC=CC=C1OCC#C CUNYTKVXYZYERK-UHFFFAOYSA-N 0.000 description 1
- 102100032040 Amphoterin-induced protein 2 Human genes 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 101000776165 Homo sapiens Amphoterin-induced protein 2 Proteins 0.000 description 1
- KWYCPUNAAYFHAK-UHFFFAOYSA-N N-(2,6-Dimethylphenyl)-4-[[(diethylamino)acetyl]amino]benzamide Chemical compound C1=CC(NC(=O)CN(CC)CC)=CC=C1C(=O)NC1=C(C)C=CC=C1C KWYCPUNAAYFHAK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/83—Mixtures of non-ionic with anionic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/10—Carbonates ; Bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
- C11D1/146—Sulfuric acid esters
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
- Materials For Medical Uses (AREA)
Abstract
【解決手段】
本発明はTFT-LCDの製造工程に用いられるレジスト除去用シンナー組成物に関し、より詳しくは、a)無機アルカリ化合物0.1乃至5重量%、b)有機アミン0.1乃至5重量%、c)有機溶剤0.1乃至30重量%、d)アニオン系界面活性剤及びノニオン系界面活性剤を1:5乃至25の重量比で含む界面活性剤0.01乃至5重量%、及びe)水60乃至99重量%を含むレジスト除去用シンナー組成物に関する。本発明のレジスト除去用シンナー組成物は、TFT-LCDディバイスと半導体ディバイス工程で基板上にコーティングされるレジスト膜の縁部または基板の後面に形成される不要な膜成分のレジスト除去能力が優れており、装備に対する腐蝕の心配がない。
Description
下記表1のような成分比を有する有機アミン、有機溶剤、界面活性剤及び水を混合して、実施例1乃至8及び比較例1乃至4のシンナー組成物を各々製造した。
物性試験
試片製造:クロムブラックマトリックスが蒸着されているLCDガラスに汎用のカラーレジスト組成物(FujiFilm Arch社製品、商品名:CR-8131L、CG-8130L、CB-8140L、CR-8100L、CG-8100L、CB-8100L)をスピンコーティングして、最終の膜厚が1.0乃至2.0μmになるように塗布した後で、チャンバーで60秒間真空乾燥(0.5torr)して試片を製造した。
Claims (6)
- a)無機アルカリ化合物0.1乃至5重量%;
b)有機アミン0.1乃至5重量%;
c)有機溶剤0.1乃至30重量%;
d)アニオン系界面活性剤及びノニオン系界面活性剤を1:5乃至25の重量比で含む界面活性剤0.01乃至5重量%;及び
e)水60乃至99重量%、
を含むことを特徴とするレジスト除去用シンナー組成物。 - 前記無機アルカリ化合物が水酸化カリウム、水酸化ナトリウム、リン酸ナトリウム、ケイ酸ナトリウム、炭酸ナトリウム、及び炭酸水素ナトリウムからなる群から1種以上選択される化合物である、請求項1に記載のレジスト除去用シンナー組成物。
- 前記有機アミンがモノエタノールアミン、ジエタノールアミン、トリエタノールアミン、モノエチルアミン、ジエチルアミン、トリエチルアミン、エチレングリコールアミン、プロピレングリコールアミン、ブチレングリコールアミン、ジエチレングリコールアミン、及びジプロピレングリコールアミンからなる群から1種以上選択される化合物である、請求項1に記載のレジスト除去用シンナー組成物。
- 前記有機溶剤は、エチレングリコールフェニルエーテル、プロピレングリコールフェニルエーテル、ブチレングリコールフェニルエーテル、ジエチレングリコールフェニルエーテル、ジプロピレングリコールフェニルエーテル、N−メチルピロリドン(NMP)、N−エチルピロリドン(NEP)、N−プロピルピロリドン(NPP)、N−ヒドロキシメチルピロリドン、及びN−ヒドロキシエチルピロリドンからなる群から1種以上選択される化合物である、請求項1に記載のレジスト除去用シンナー組成物。
- 前記アニオン系界面活性剤がソジウムラウレートスルフェートまたはアルキルスルフェートナトリウム(sodium alkyl sulfate)である、請求項1に記載のレジスト除去用シンナー組成物。
- 前記ノニオン系界面活性剤がポリオキシエチルエーテル、ポリオキシプロピルエーテル、ポリオキシエチルオクチルフェニルエーテル、ポリオキシプロピルオクチルフェニルエーテル、ポリオキシエチルプロピルエーテル、及びポリオキシエチルプロピルオクチルフェニルエーテルからなる群から1種以上選択される化合物である、請求項1に記載のレジスト除去用シンナー組成物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010070364A KR100646793B1 (ko) | 2001-11-13 | 2001-11-13 | 씬너 조성물 |
PCT/KR2002/002117 WO2003042762A1 (en) | 2001-11-13 | 2002-11-13 | Chemical rinse composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005509693A true JP2005509693A (ja) | 2005-04-14 |
JP4225909B2 JP4225909B2 (ja) | 2009-02-18 |
Family
ID=19715928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003544532A Expired - Lifetime JP4225909B2 (ja) | 2001-11-13 | 2002-11-13 | シンナー組成物 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7063930B2 (ja) |
EP (1) | EP1451642B1 (ja) |
JP (1) | JP4225909B2 (ja) |
KR (1) | KR100646793B1 (ja) |
CN (1) | CN1302342C (ja) |
AT (1) | ATE420941T1 (ja) |
DE (1) | DE60230911D1 (ja) |
WO (1) | WO2003042762A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101175225B1 (ko) * | 2005-06-07 | 2012-08-21 | 매그나칩 반도체 유한회사 | 반도체 소자의 패턴 형성방법 및 이를 이용한 금속배선형성방법 |
KR101184381B1 (ko) * | 2005-05-11 | 2012-09-20 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속배선 형성방법 |
WO2016021646A1 (ja) * | 2014-08-08 | 2016-02-11 | 東レ株式会社 | 仮貼り用接着剤、接着剤層、ウエハ加工体およびこれを用いた半導体装置の製造方法、リワーク溶剤、ポリイミド共重合体、ポリイミド混合樹脂、ならびに樹脂組成物 |
WO2017175856A1 (ja) * | 2016-04-08 | 2017-10-12 | 富士フイルム株式会社 | 処理液、その製造方法、パターン形成方法及び電子デバイスの製造方法 |
WO2018047631A1 (ja) * | 2016-09-09 | 2018-03-15 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
WO2019111625A1 (ja) * | 2017-12-08 | 2019-06-13 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
JP2019117331A (ja) * | 2017-12-27 | 2019-07-18 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100485737B1 (ko) * | 2001-11-27 | 2005-04-27 | 주식회사 동진쎄미켐 | 레지스트 제거용 신너 조성물 |
JP4644492B2 (ja) * | 2002-11-15 | 2011-03-02 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 電子デバイスの二次加工に保護層を用いる方法 |
US20040170925A1 (en) * | 2002-12-06 | 2004-09-02 | Roach David Herbert | Positive imageable thick film compositions |
US7078162B2 (en) | 2003-10-08 | 2006-07-18 | Eastman Kodak Company | Developer regenerators |
US7402373B2 (en) * | 2004-02-05 | 2008-07-22 | E.I. Du Pont De Nemours And Company | UV radiation blocking protective layers compatible with thick film pastes |
KR100571721B1 (ko) * | 2004-02-10 | 2006-04-17 | 삼성전자주식회사 | 신너 조성물 및 이를 이용한 포토레지스트의 제거 방법 |
JP4524744B2 (ja) * | 2004-04-14 | 2010-08-18 | 日本電気株式会社 | 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法 |
EP1756673A1 (en) * | 2004-05-27 | 2007-02-28 | E.I.Du pont de nemours and company | Developer for a photopolymer protective layer |
JP4830445B2 (ja) * | 2004-11-15 | 2011-12-07 | Jsr株式会社 | 金属製容器の洗浄方法及び樹脂成形品の洗浄方法 |
CA2597230C (en) | 2005-02-15 | 2012-03-06 | Bhupinder Bharaj | Anti-corrosion detergent compositions and use of same in cleaning dental and medical instruments |
WO2008039730A1 (en) * | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
KR100945157B1 (ko) * | 2008-01-04 | 2010-03-08 | 주식회사 켐트로닉스 | 티에프티 엘씨디용 칼라 레지스트 박리액 조성물 |
JP5052450B2 (ja) * | 2008-07-30 | 2012-10-17 | 富士フイルム株式会社 | 着色感光性組成物用アルカリ現像液、画像形成方法、カラーフイルタ、および液晶表示装置 |
CN101359189B (zh) * | 2008-09-17 | 2011-04-27 | 电子科技大学 | 正性光敏聚酰亚胺光刻胶用显影液 |
CN101520612B (zh) * | 2009-04-01 | 2011-12-21 | 苏州瑞红电子化学品有限公司 | 彩色光刻胶的清洗剂 |
CN101818103B (zh) * | 2010-05-17 | 2012-05-02 | 江西瑞思博化工有限公司 | 电子材料清洗剂 |
CN104629933A (zh) * | 2013-11-11 | 2015-05-20 | 青岛锦涟鑫商贸有限公司 | 一种织物用杀菌清洗剂 |
KR101554103B1 (ko) * | 2014-06-10 | 2015-09-17 | 동우 화인켐 주식회사 | 레지스트 도포성 개선용 및 제거용 신너 조성물 |
US9482957B1 (en) * | 2015-06-15 | 2016-11-01 | I-Shan Ke | Solvent for reducing resist consumption and method using solvent for reducing resist consumption |
CN104893830B (zh) * | 2015-06-29 | 2018-01-30 | 邓婷 | 电子器件用显示屏清洗液 |
CN105505630A (zh) * | 2015-12-07 | 2016-04-20 | 苏州市晶协高新电子材料有限公司 | 一种半导体工艺中用的表面处理剂及方法 |
CN105527804A (zh) * | 2016-03-09 | 2016-04-27 | 长沙晟辉新材料有限公司 | 一种低温型水系正性光阻剥离液 |
CN108863104B (zh) * | 2017-05-10 | 2021-11-23 | 蓝思科技(长沙)有限公司 | 玻璃退镀剂及玻璃退镀工艺 |
JP2019038192A (ja) * | 2017-08-25 | 2019-03-14 | 花王株式会社 | 三次元物体前駆体処理剤組成物 |
CN108319118A (zh) * | 2018-03-15 | 2018-07-24 | 昆山长优电子材料有限公司 | 有机剥膜液 |
CN108227410A (zh) * | 2018-03-15 | 2018-06-29 | 昆山长优电子材料有限公司 | 显影辅助剂 |
US11456170B2 (en) * | 2019-04-15 | 2022-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cleaning solution and method of cleaning wafer |
CN110684602A (zh) * | 2019-09-19 | 2020-01-14 | 江华飞信达科技有限公司 | 一种lcd基板清洗剂及其使用方法 |
EP4334135A1 (en) * | 2021-05-03 | 2024-03-13 | Dow Global Technologies LLC | Solvent composition |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63231343A (ja) * | 1987-03-20 | 1988-09-27 | Hitachi Ltd | レジストパタ−ンの剥離液 |
JP3449651B2 (ja) * | 1994-09-16 | 2003-09-22 | 東京応化工業株式会社 | レジスト剥離液組成物 |
US5593504A (en) | 1995-04-26 | 1997-01-14 | Church & Dwight Co., Inc. | Method of cleaning solder pastes from a substrate with an aqueous cleaner |
US5962197A (en) | 1998-03-27 | 1999-10-05 | Analyze Inc. | Alkaline organic photoresist stripper |
US6080531A (en) * | 1998-03-30 | 2000-06-27 | Fsi International, Inc. | Organic removal process |
DE19845605A1 (de) * | 1998-10-05 | 2000-04-06 | Agfa Gevaert Ag | Konzentrat und daraus hergestellter wäßriger Entwickler für bildmäßig bestrahlte Aufzeichnungsmaterialien |
TW546553B (en) * | 1998-12-25 | 2003-08-11 | Tokyo Ohka Kogyo Co Ltd | Photoresist stripping liquid composition and a method of stripping photoresists using the same |
KR100286860B1 (ko) * | 1998-12-31 | 2001-07-12 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
KR100348434B1 (ko) * | 2000-01-14 | 2002-08-10 | 주식회사 동진쎄미켐 | 레지스트 리무버 조성물 |
US6475966B1 (en) * | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
US6417147B2 (en) | 2000-02-29 | 2002-07-09 | Showa Denko K.K. | Cleaning agent composition, method for cleaning and use thereof |
US6274296B1 (en) | 2000-06-08 | 2001-08-14 | Shipley Company, L.L.C. | Stripper pretreatment |
JP2002075993A (ja) * | 2000-06-15 | 2002-03-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
KR20010113396A (ko) * | 2000-06-19 | 2001-12-28 | 주식회사 동진쎄미켐 | 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물 |
KR20020063096A (ko) * | 2001-01-26 | 2002-08-01 | 동우 화인켐 주식회사 | 포토레지스트의 에지 비드를 제거하는 세정용액 및 이를이용한 세정방법 |
KR100756552B1 (ko) * | 2001-06-23 | 2007-09-07 | 주식회사 동진쎄미켐 | 씬너 조성물 |
-
2001
- 2001-11-13 KR KR1020010070364A patent/KR100646793B1/ko active IP Right Grant
-
2002
- 2002-11-13 WO PCT/KR2002/002117 patent/WO2003042762A1/en active Application Filing
- 2002-11-13 AT AT02788952T patent/ATE420941T1/de not_active IP Right Cessation
- 2002-11-13 EP EP02788952A patent/EP1451642B1/en not_active Expired - Lifetime
- 2002-11-13 JP JP2003544532A patent/JP4225909B2/ja not_active Expired - Lifetime
- 2002-11-13 DE DE60230911T patent/DE60230911D1/de not_active Expired - Lifetime
- 2002-11-13 CN CNB028224248A patent/CN1302342C/zh not_active Expired - Lifetime
- 2002-11-13 US US10/495,056 patent/US7063930B2/en not_active Expired - Lifetime
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101184381B1 (ko) * | 2005-05-11 | 2012-09-20 | 매그나칩 반도체 유한회사 | 반도체 소자의 금속배선 형성방법 |
KR101175225B1 (ko) * | 2005-06-07 | 2012-08-21 | 매그나칩 반도체 유한회사 | 반도체 소자의 패턴 형성방법 및 이를 이용한 금속배선형성방법 |
US10941320B2 (en) | 2014-08-08 | 2021-03-09 | Toray Industries, Inc. | Adhesive for temporary bonding, adhesive layer, wafer work piece and method for manufacturing semiconductor device using same, rework solvent, polyimide copolymer, polyimide mixed resin, and resin compostion |
WO2016021646A1 (ja) * | 2014-08-08 | 2016-02-11 | 東レ株式会社 | 仮貼り用接着剤、接着剤層、ウエハ加工体およびこれを用いた半導体装置の製造方法、リワーク溶剤、ポリイミド共重合体、ポリイミド混合樹脂、ならびに樹脂組成物 |
US10177022B2 (en) | 2014-08-08 | 2019-01-08 | Toray Industries, Inc. | Adhesive for temporary bonding, adhesive layer, wafer work piece and method for manufacturing semiconductor device using same, rework solvent, polyimide copolymer, polyimide mixed resin, and resin composition |
WO2017175856A1 (ja) * | 2016-04-08 | 2017-10-12 | 富士フイルム株式会社 | 処理液、その製造方法、パターン形成方法及び電子デバイスの製造方法 |
US11480880B2 (en) | 2016-04-08 | 2022-10-25 | Fujifilm Corporation | Treatment liquid, method of manufacturing treatment liquid, pattern forming method, and method of manufacturing electronic device |
JPWO2017175856A1 (ja) * | 2016-04-08 | 2019-01-31 | 富士フイルム株式会社 | 処理液、その製造方法、パターン形成方法及び電子デバイスの製造方法 |
WO2018047631A1 (ja) * | 2016-09-09 | 2018-03-15 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
KR20190051965A (ko) | 2016-09-09 | 2019-05-15 | 카오카부시키가이샤 | 수지 마스크 박리용 세정제 조성물 |
KR102455657B1 (ko) * | 2016-09-09 | 2022-10-17 | 카오카부시키가이샤 | 수지 마스크 박리용 세정제 조성물 |
JP2018041033A (ja) * | 2016-09-09 | 2018-03-15 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
WO2019111625A1 (ja) * | 2017-12-08 | 2019-06-13 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
KR20200088365A (ko) | 2017-12-08 | 2020-07-22 | 카오카부시키가이샤 | 수지 마스크 박리용 세정제 조성물 |
JP2019117331A (ja) * | 2017-12-27 | 2019-07-18 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
JP7020905B2 (ja) | 2017-12-27 | 2022-02-16 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
Also Published As
Publication number | Publication date |
---|---|
WO2003042762A1 (en) | 2003-05-22 |
US20050058953A1 (en) | 2005-03-17 |
EP1451642B1 (en) | 2009-01-14 |
KR100646793B1 (ko) | 2006-11-17 |
ATE420941T1 (de) | 2009-01-15 |
CN1585914A (zh) | 2005-02-23 |
JP4225909B2 (ja) | 2009-02-18 |
CN1302342C (zh) | 2007-02-28 |
KR20030052245A (ko) | 2003-06-27 |
DE60230911D1 (de) | 2009-03-05 |
US7063930B2 (en) | 2006-06-20 |
EP1451642A4 (en) | 2005-08-17 |
EP1451642A1 (en) | 2004-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4225909B2 (ja) | シンナー組成物 | |
KR100286860B1 (ko) | 포토레지스트 리무버 조성물 | |
KR100729992B1 (ko) | 결함 감소방법 | |
WO2002012962A1 (fr) | Solution aqueuse de tensioactifs servant a reveler une couche de film de revetement | |
KR20040032774A (ko) | 포토리소그래피용 세정액 및 기판의 처리 방법 | |
TW201533549A (zh) | 光阻剝離液 | |
CN101041794A (zh) | 清洗液组成物和其用途 | |
JP3929518B2 (ja) | レジスト用剥離液組成物 | |
TWI323391B (en) | Remover solution composition and use thereof | |
KR100544889B1 (ko) | 포토레지스트용 스트리퍼 조성물 | |
WO2012161790A1 (en) | Concentrated chemical composition and method for removing photoresist during microelectric fabrication | |
KR100840530B1 (ko) | 포토레지스트 현상액 조성물 | |
KR100485737B1 (ko) | 레지스트 제거용 신너 조성물 | |
KR20080009970A (ko) | 포토레지스트 현상액 및 이를 이용한 포토레지스트 패턴형성 방법 | |
KR100756552B1 (ko) | 씬너 조성물 | |
KR101821034B1 (ko) | 포토레지스트의 박리 방법 | |
KR100378552B1 (ko) | 레지스트 리무버 조성물 | |
JP2005514661A (ja) | ポジ型またはネガ型フォトレジスト用の洗浄剤組成物 | |
US20060177761A1 (en) | Chemical rinse composition | |
KR20010113396A (ko) | 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물 | |
CN1682155B (zh) | 光刻胶剥离剂组合物 | |
JP2010134406A (ja) | 現像剤組成物 | |
JP4262207B2 (ja) | 低気泡性感放射線性組成物用現像液 | |
KR100568558B1 (ko) | 구리 배선용 포토레지스트 스트리퍼 조성물 | |
KR20040089429A (ko) | 포토레지스트 박리액 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051111 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081111 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20081118 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20081125 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111205 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4225909 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111205 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121205 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121205 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131205 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131205 Year of fee payment: 5 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131205 Year of fee payment: 5 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |