JP2005183924A - 半導体チップ実装用基板、半導体チップの実装構造および半導体チップの実装方法 - Google Patents
半導体チップ実装用基板、半導体チップの実装構造および半導体チップの実装方法 Download PDFInfo
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- JP2005183924A JP2005183924A JP2004210626A JP2004210626A JP2005183924A JP 2005183924 A JP2005183924 A JP 2005183924A JP 2004210626 A JP2004210626 A JP 2004210626A JP 2004210626 A JP2004210626 A JP 2004210626A JP 2005183924 A JP2005183924 A JP 2005183924A
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Abstract
【解決手段】 半導体チップ実装用基板は、絶縁層2a,2bと配線層3a,3b,3cを交互に積層した多層基板であって、層間導通用ビアホール4により各配線層3a,3b,3cによる配線が電気的に接続されている。最表層の絶縁層2aにおける、実装する半導体チップ20のバンプ21の配置位置に、最表層の絶縁層2aを貫通する貫通孔10が、バンプ21を挿入可能に形成されるとともに、貫通孔10の開口部において最表層の配線層3aでの配線6の一部が貫通孔10の内部に突き出している。
【選択図】 図1
Description
以下、本発明を具体化した第1の実施の形態を図面に従って説明する。
図1には、本実施形態における半導体チップ実装用基板1と半導体チップ20を示し、実装前の状態である。本実施形態における半導体チップ実装用基板1および半導体チップ20等により車載コンピュータ(電子制御装置)を構成している。半導体チップ20にはバンプ(突起電極)21が設けられている。
図1に示すように、バンプ21を設けた半導体チップ20を、半導体チップ実装用基板1に対し、バンプ21と貫通孔(キャビティー)10の位置を合わせする。そして、この状態で、少なくとも熱と圧力を加えながら、図3に示すように、バンプ21を貫通孔10に挿入してフリップチップ接続する。このとき、バンプ21が貫通孔10内に挿入されたことにより配線の突部(突き出し部)11a,11bが変形し、この変形した突部(突き出し部)11a,11bとバンプ21とが電気的に接続される。詳しくは、貫通孔10へのバンプ21の挿入時に配線の突部(突き出し部)11a,11bがバンプ21によって変形し、バンプ21の側面と配線の突部(突き出し部)11a,11bが接続される。この挿入時に、バンプ21と配線の突部(突き出し部)11a,11bが擦れ、酸化膜が除去されて、新生面が生成される。それにより配線6とバンプ21との金属結合が形成される。
(第2の実施の形態)
次に、第2の実施の形態を図面に従って説明する。
図10は半導体チップ実装用基板50の一部拡大図であり、図10(a)に基板50の平面図を示すとともに図10(b)に図10(a)のA−A線での断面図を示す。図10において、半導体チップ実装用基板50は、絶縁層(基材)51a,51b,…と配線層52a,52b,…が交互に積層されている。絶縁層(基材)51a,51b,…には各層の配線を電気的に接続するための層間導通用ビアホール54が形成され、ビアホール54により、詳しくはビアホール54に充填した導体55により各層の配線が電気的に接続されている。
図9(a)に示すように、バンプ21を設けた半導体チップ20を、半導体チップ実装用基板50に対し、バンプ21と貫通孔56の位置を合わせる。そして、図9(b)に示すように、半導体チップ20の能動面と基板50とが接触するようにしてフリップチップ接続する。このとき、バンプ21が貫通孔56内に挿入され、貫通孔56の底部の配線53とバンプ21とが電気的に接続される。また、半導体チップ20の能動面および接続部は最表層の絶縁層(熱可塑性樹脂層)51aにより、フリップチップ接続と同時に封止される。
半導体チップ実装用基板1,50として、表層配線と層間導通用ビアホールが形成された熱可塑性樹脂基材を複数積層し、一括熱プレスにより形成された積層基板を用いる。
図29において、アルミナを90%以上含む基材を用意し、基材における導通用ビアホール部に穴をあける。そして、金属ペーストを印刷して配線を形成するとともに穴を埋める。さらに、各層を一括積層して一括熱焼成を行う。これにより、積層基板が作られる。
(第3の実施の形態)
次に、第3の実施の形態を図面に従って説明する。
配線82の突部(突き出し部)84a,84bは、図18のように1本の配線を接続箇所中心にてエッジング(削除)することにより形成したものである。これに代わり、図19に示すように、配線82を一方向から突き出させて突部(突き出し部)84cとしてもよい。
図18の半導体チップ実装用基板80を用意し、図17(a)に示すように、バンプ21を設けた半導体チップ20を、基板80に、配線の一部を貫通孔83の開口部に突き出させた面側から、バンプ21と貫通孔83の位置を合わせする。そして、バンプ21と貫通孔83の位置が合った状態で、少なくとも熱と圧力を加えながら、図17(b)に示すように、バンプ21を貫通孔83内に挿入してフリップチップ接続する。このとき、バンプ21が貫通孔83内に挿入されたことにより配線の突部(突き出し部)84a,84bが変形し、この変形した突部(突き出し部)84a,84bとバンプ21とが電気的に接続される。詳しくは、貫通孔83へのバンプ21の挿入時に配線の突部(突き出し部)84a,84bがバンプ21によって変形し、バンプ21の側面と配線の突部(突き出し部)84a,84bが接続される。この挿入時に、バンプ21と配線の突部(突き出し部)84a,84bが擦れ、酸化膜が除去されて、新生面が生成される。それにより配線82とバンプ21との金属結合が形成される。
(第4の実施の形態)
次に、第4の実施の形態を、第3の実施の形態との相違点を中心に説明する。
(第5の実施の形態)
次に、第5の実施の形態を、第3の実施の形態との相違点を中心に説明する。
(第6の実施の形態)
次に、第6の実施の形態を、第4,5の実施の形態との相違点を中心に説明する。
つまり、本基材を用いた場合の実装方法として、図26(a)に示すように、半導体チップ86と基板80を位置合わせして、ボンディングヘッド96を半導体チップ86に当てて200℃〜300℃で10秒程度、圧着することによって、半導体チップ86を基板80に固着させる。即ち、バンプが挿入可能な貫通孔83を有する半導体チップ実装用基板80における、配線の一部を貫通孔83の開口部に突き出させた面とは反対の面側に、半導体チップ86を、半導体チップの電極87と貫通孔83の位置が合った状態でフェースダウンで熱可塑性樹脂基材からなる絶縁基材95に熱圧着する(第1工程)。その後、図26(b)に示すように、上下を逆にして基板80の貫通孔83を通して半導体チップの電極87にバンプ97をボンディングする。即ち、半導体チップ実装用基板80における、配線の一部を貫通孔83の開口部に突き出させた面より、バンプ97を貫通孔83内に挿入して半導体チップの電極87にボンディングする(第2工程)。この方法によれば、フリップチップによるバンプ97との接続部分の配線が絶縁基材81に固着されていないために、配線部分の応力緩和能力が向上して接続信頼性が高いものとなる。また、バンプ97のボンディング工程において、バンプ97の電極87への取付と、バンプ97と配線82との接続を同時に行なうことができ、工程を簡素化することができる。また、熱可塑性樹脂基材を用いることにより、熱圧着することによって半導体チップ86を基材に接着することができ、接着剤を不要にできるとともに接着剤の塗布工程(接着剤供給工程)を無くすことができる。なお、接合原理は、上述した第4の実施形態と同様である。
図27(a)に示すように、半導体チップ実装用基板80は、ボンディングツールの先端部が挿入可能な貫通孔83を有する。この基板80における、配線の一部を貫通孔83の開口部に突き出させた面とは反対の面側に、半導体チップ86を、半導体チップの電極87と貫通孔83の位置が合った状態でフェースダウンで熱可塑性樹脂基材からなる絶縁基材95に熱圧着する(第1工程)。このとき、ボンディングヘッド96にて熱と圧力を加える。そして、図27(b)に示すように、半導体チップ実装用基板80における、配線の一部を貫通孔83の開口部に突き出させた面側より、開口部に突き出した配線(84c)をボンディングツール92により、半導体チップの電極87にボンディングする(第2工程)。その結果、図27(c)に示すように、配線の突部(突き出し部)84cが半導体チップの電極87にボンディングされる。この方法によれば、半導体チップ86との接続部分の配線が絶縁基材95に固着されていないために、配線部分の応力緩和能力が向上して接続信頼性が高いものとなる。また、熱可塑性樹脂基材を用いることにより、熱圧着することによって半導体チップ86を基材に接着することができ、接着剤を不要にできるとともに接着剤の塗布工程(接着剤供給工程)を無くすことができる。
Claims (29)
- 絶縁層(2a,2b)と配線層(3a,3b,3c)を交互に積層した多層基板であって、層間導通用ビアホール(4)により各配線層(3a,3b,3c)による配線が電気的に接続されており、半導体チップ(20)がフリップチップ実装される半導体チップ実装用基板(1)において、
少なくとも最表層の絶縁層(2a)における、実装する半導体チップ(20)のバンプ(21)の配置位置に、当該少なくとも最表層の絶縁層(2a)を貫通する貫通孔(10)が、前記バンプ(21)を挿入可能に形成されるとともに、当該貫通孔(10)の開口部において最表層の配線層(3a)での配線(6)の一部が貫通孔(10)の内部に突き出していることを特徴とする半導体チップ実装用基板。 - 前記少なくとも最表層の絶縁層(2a)を貫通する貫通孔(10)の底部に、フリップチップ接続を行うための配線(12)を設けたことを特徴とする請求項1に記載の半導体チップ実装用基板。
- 前記少なくとも最表層の絶縁層(2a)を貫通する貫通孔(10)は、最表層の絶縁層(2a)よりも内層側の絶縁層(2b)も貫通しており、最表層の配線層(3a)よりも内層側の配線層(3b)による配線の一部が前記貫通孔(10)の側壁から貫通孔(10)内に突き出していることを特徴とする請求項1または2に記載の半導体チップ実装用基板。
- バンプ(21)を設けた半導体チップ(20)が、請求項1〜3のいずれかの半導体チップ実装用基板(1)に、バンプ(21)と貫通孔(10)の位置が合った状態でフリップチップ接続され、バンプ(21)が貫通孔(10)内に挿入されたことにより変形した配線(6)とバンプ(21)が電気的に接続されていることを特徴とする半導体チップの実装構造。
- バンプ(21)を設けた半導体チップ(20)を、請求項1〜3のいずれかの半導体チップ実装用基板(1)に、バンプ(21)と貫通孔(10)の位置が合った状態で、超音波振動を加えながらバンプ(21)を貫通孔(10)内に挿入してバンプと配線との接続部に金属結合を形成しつつ、変形した配線(6)とバンプ(21)を電気的に接続してフリップチップ接続したことを特徴とする半導体チップの実装方法。
- 貫通孔(10)内におけるバンプ(21)と配線との接続部が銀ペースト(35)で満たされていることを特徴とする請求項4に記載の半導体チップの実装構造。
- 絶縁層(51a,51b)と配線層(52a,52b)を交互に積層した多層基板であって、層間導通用ビアホール(54)により各配線層(52a,52b)による配線が電気的に接続されており、半導体チップ(20)がフリップチップ実装される半導体チップ実装用基板(50)において、
少なくとも最表層の絶縁層(51a)における、実装する半導体チップ(20)のバンプ(21)の配置位置に、当該少なくとも最表層の絶縁層(51a)を貫通する貫通孔(56)が、前記バンプ(21)を挿入可能に形成されるとともに、当該貫通孔(56)の底部にバンプ(21)と接続するための配線(53)が設けられ、少なくとも最表層の絶縁層(51a)は熱可塑性樹脂よりなることを特徴とする半導体チップ実装用基板。 - 絶縁層(51a,51b,51c)と配線層(52a,52b,52c)を交互に積層した多層基板であって、層間導通用ビアホール(54)により各配線層(52a,52b,52c)による配線が電気的に接続されており、半導体チップ(20)がフリップチップ実装される半導体チップ実装用基板(50)において、
少なくとも最表層の絶縁層(51a)を含む2層の絶縁層(51a,51b)における、実装する半導体チップ(20)のバンプ(21)の配置位置に、当該少なくとも最表層の絶縁層(51a)を含む2層の絶縁層(51a,51b)を貫通する貫通孔(56)が、前記バンプ(21)を挿入可能に形成されるとともに、当該貫通孔(56)が形成された少なくとも最表層の絶縁層(51a)を含む2層の絶縁層(51a,51b)に挟まれた配線層(52a)による配線の一部が貫通孔(56)内に突き出しており、少なくとも最表層の絶縁層(51a)は熱可塑性樹脂よりなることを特徴とする半導体チップ実装用基板。 - 貫通孔(56)の底部にフリップチップ接続を行うための配線(60)を設けたことを特徴とする請求項8に記載の半導体チップ実装用基板。
- バンプ(21)を設けた半導体チップ(20)が、請求項7〜9のいずれかの半導体チップ実装用基板(50)に、バンプ(21)と貫通孔(56)の位置が合った状態でフリップチップ接続され、バンプ(21)が貫通孔(56)内に挿入されたことにより半導体チップ(20)の能動面と半導体チップ実装用基板(50)とが半導体チップ実装用基板(50)の最表層の熱可塑性樹脂製絶縁層(51a)により接着した状態で配線とバンプ(21)が電気的に接続されていることを特徴とする半導体チップの実装構造。
- バンプ(21)を設けた半導体チップ(20)を、請求項7〜9のいずれかの半導体チップ実装用基板(50)に、バンプ(21)と貫通孔(56)の位置が合った状態で、少なくとも熱と圧力を加えながらバンプ(21)を貫通孔(56)内に挿入して半導体チップ(20)の能動面と半導体チップ実装用基板(50)とを半導体チップ実装用基板(50)の最表層の熱可塑性樹脂製絶縁層(51a)により接着しつつチップ(20)側のバンプ(21)と基板(50)側の配線とを電気的に接続したことを特徴とする半導体チップの実装方法。
- 熱と圧力を加える時に、長くても、バンプ(21)と貫通孔(56)の底部とが接触してから半導体チップ(20)の能動面と半導体チップ実装用基板(50)の最表層の絶縁層(51a)とが接触する前までの間において、超音波振動を加えることによって、バンプ(21)と配線との接続部に金属結合を形成することを特徴とする請求項11に記載の半導体チップの実装方法。
- 貫通孔(56)内においてバンプ(21)と配線との接続部が銀ペースト(70)で満たされていることを特徴とする請求項10に記載の半導体チップの実装構造。
- 絶縁基材(81)の表面に配線(82)がパターニングされており、半導体チップ(20)がフリップチップ実装される半導体チップ実装用基板において、
実装する半導体チップ(20)のバンプ(21)の配置位置に、絶縁基材(81)を貫通する貫通孔(83)が、前記バンプ(21)を挿入可能に形成されるとともに、当該貫通孔(83)の開口部において配線(82)の一部が貫通孔(83)の開口部に突き出していることを特徴とする半導体チップ実装用基板。 - バンプ(21)を設けた半導体チップ(20)が、請求項14の半導体チップ実装用基板(80)に、前記配線の一部を貫通孔(83)の開口部に突き出させた面側から、バンプ(21)と貫通孔(83)の位置が合った状態でフリップチップ接続され、バンプ(21)が貫通孔(83)内に挿入されたことにより変形した配線(82)とバンプ(21)が電気的に接続されていることを特徴とする半導体チップの実装構造。
- バンプ(21)を設けた半導体チップ(20)を、請求項14の半導体チップ実装用基板(80)に、前記配線の一部を貫通孔(83)の開口部に突き出させた面側から、バンプ(21)と貫通孔(83)の位置が合った状態で、超音波振動を加えながらバンプ(21)を貫通孔(83)内に挿入してバンプと配線との接続部に金属結合を形成しつつ、変形した配線(82)とバンプ(21)を電気的に接続してフリップチップ接続したことを特徴とする半導体チップの実装方法。
- 半導体チップ(86)が、請求項14の半導体チップ実装用基板(80)に、前記配線の一部を貫通孔(83)の開口部に突き出させた面とは反対の面側から、半導体チップの電極(87)と貫通孔(83)の位置が合った状態でフェースダウンで接着され、前記配線の一部を貫通孔(83)の開口部に突き出させた面よりバンプ(88)が貫通孔(83)内に挿入されて半導体チップの電極(87)にボンディングされたことにより変形した配線(82)とバンプ(88)が電気的に接続されていることを特徴とする半導体チップの実装構造。
- 前記バンプ(88)の先端が配線(82)にワイヤーボンディングされていることを特徴とする請求項17に記載の半導体チップの実装構造。
- 請求項14の半導体チップ実装用基板(80)における、前記配線の一部を貫通孔(83)の開口部に突き出させた面とは反対の面に、半導体チップ(86)を、半導体チップの電極(87)と貫通孔(83)の位置が合った状態でフェースダウンで接着剤(85)を介在させて搭載する第1工程と、
前記半導体チップ実装用基板(80)における、前記配線の一部を貫通孔(83)の開口部に突き出させた面よりバンプ(88)を貫通孔(83)内に挿入して当該バンプ(88)を半導体チップの電極(87)にボンディングする第2工程と、
を有することを特徴とする半導体チップの実装方法。 - 前記バンプ(88)を半導体チップの電極(87)にボンディングした後に、前記半導体チップ実装用基板(80)の表面から突出した前記バンプ(88)の構成部材を、前記配線の一部を貫通孔(83)の開口部に突き出させた面側から押圧して潰すようにしたことを特徴とする請求項19に記載の半導体チップの実装方法。
- 絶縁基材(81)の表面に配線(82)がパターニングされており、半導体チップ(86)がフリップチップ実装される半導体チップ実装用基板において、
実装する半導体チップ(86)の電極(87)の配置位置に、絶縁基材(81)を貫通する貫通孔(83)が、ボンディングツール(92)の先端部を挿入可能に形成されるとともに、当該貫通孔(83)の開口部において配線(82)の一部が貫通孔(83)の開口部に突き出していることを特徴とする半導体チップ実装用基板。 - 半導体チップ(86)が、請求項21の半導体チップ実装用基板(80)に、前記配線の一部を貫通孔(83)の開口部に突き出させた面とは反対の面側から、半導体チップの電極(87)と貫通孔(83)の位置が合った状態でフェースダウンで接着され、前記開口部に突き出した配線(84c)が半導体チップの電極(87)にボンディングされ、配線(82)と半導体チップの電極(87)が電気的に接続されていることを特徴とする半導体チップの実装構造。
- 電極(87)にスタッドバンプ(93)が形成された半導体チップ(86)が、請求項21の半導体チップ実装用基板(80)に、前記配線の一部を貫通孔(83)の開口部に突き出させた面とは反対の面側から、半導体チップの電極(87)と貫通孔(83)の位置が合った状態でフェースダウンで接着され、前記開口部に突き出した配線(84c)が半導体チップ(86)の前記スタッドバンプ(93)にボンディングされ、配線(82)と半導体チップの電極(87)が電気的に接続されていることを特徴とする半導体チップの実装構造。
- 電極(87)にメッキバンプ(94)が形成された半導体チップ(86)が、請求項21の半導体チップ実装用基板(80)に、前記配線の一部を貫通孔(83)の開口部に突き出させた面とは反対の面側から、半導体チップの電極(87)と貫通孔(83)の位置が合った状態でフェースダウンで接着され、前記開口部に突き出した配線(84c)が半導体チップ(86)の前記メッキバンプ(94)にボンディングされ、配線(82)と半導体チップの電極(87)が電気的に接続されていることを特徴とする半導体チップの実装構造。
- 請求項21の半導体チップ実装用基板(80)における、前記配線の一部を貫通孔(83)の開口部に突き出させた面とは反対の面に、半導体チップ(86)を、半導体チップの電極(87)と貫通孔(83)の位置が合った状態でフェースダウンで接着剤(91)を介在させて搭載する第1工程と、
前記半導体チップ実装用基板(80)における、前記配線の一部を貫通孔(83)の開口部に突き出させた面より、前記開口部に突き出した配線(84c)をボンディングツール(92)により半導体チップの電極(87)にボンディングする第2工程と、
を有することを特徴とする半導体チップの実装方法。 - 前記絶縁基材(95)が熱可塑性樹脂基材からなることを特徴とする請求項14または21に記載の半導体チップ実装用基板。
- 請求項17,18,22,23,24のいずれか1項に記載の半導体チップの実装構造において、請求項26の半導体チップ実装用基板を用いたことを特徴とする半導体チップの実装構造。
- 絶縁基材(95)が熱可塑性樹脂基材からなる請求項14の半導体チップ実装用基板(80)における、前記配線の一部を貫通孔(83)の開口部に突き出させた面とは反対の面側に、半導体チップ(86)を、半導体チップの電極(87)と貫通孔(83)の位置が合った状態でフェースダウンで前記熱可塑性樹脂基材からなる絶縁基材(95)に熱圧着する第1工程と、
前記半導体チップ実装用基板(80)における、前記配線の一部を貫通孔(83)の開口部に突き出させた面より、バンプ(97)を貫通孔(83)内に挿入して半導体チップの電極(87)にボンディングする第2工程と、
を有することを特徴とする半導体チップの実装方法。 - 絶縁基材(95)が熱可塑性樹脂基材からなる請求項21の半導体チップ実装用基板(80)における、前記配線の一部を貫通孔(83)の開口部に突き出させた面とは反対の面側に、半導体チップ(86)を、半導体チップの電極(87)と貫通孔(83)の位置が合った状態でフェースダウンで前記熱可塑性樹脂基材からなる絶縁基材(95)に熱圧着する第1工程と、
前記半導体チップ実装用基板(80)における、前記配線の一部を貫通孔(83)の開口部に突き出させた面側より、前記開口部に突き出した配線(84c)をボンディングツール(92)により、半導体チップの電極(87)にボンディングする第2工程と、
を有することを特徴とする半導体チップの実装方法。
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