JP2005116651A - 半導体装置及びその製造方法 - Google Patents
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- JP2005116651A JP2005116651A JP2003346493A JP2003346493A JP2005116651A JP 2005116651 A JP2005116651 A JP 2005116651A JP 2003346493 A JP2003346493 A JP 2003346493A JP 2003346493 A JP2003346493 A JP 2003346493A JP 2005116651 A JP2005116651 A JP 2005116651A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 90
- 210000000746 body region Anatomy 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 199
- 238000009792 diffusion process Methods 0.000 claims description 48
- 239000002344 surface layer Substances 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 abstract description 27
- 238000000034 method Methods 0.000 description 33
- 230000000694 effects Effects 0.000 description 10
- 238000002513 implantation Methods 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】P型半導体基板1上にN型埋込層2を介してエピタキシャル層からなるドレイン領域7が形成され、ドレイン領域7に、内部にN型ソース領域13を含むP型ボディ領域10とドレイン引き出し領域9とが形成されるDMOSFETにおいて、エピタキシャル成長前にN型高濃度埋込層2aを形成する際に、P型ボディ領域10下層の少なくとも一部にN型高濃度埋込層2aが形成されないようにし、その後の熱処理によって不純物が拡散された状態で、P型ボディ領域10下層の不純物濃度がドリフト領域下層よりも低くなるようにする。これによりブレークダウンを抑制してドレイン耐圧の低下を抑制すると同時に、ドリフト領域下層のN型埋込層2の濃度を高くしてドレイン抵抗の低減を図る。
【選択図】図1
Description
2 N型埋込層
2a N型高濃度埋込層
2b 埋込層拡散領域
3 マスク
4 P型エピタキシャル層
5 N型不純物注入層
6 N型エピタキシャル層
7 ドレイン領域
8 フィールド酸化膜
9 ドレイン引き出し領域
10 P型ボディ領域
11 ゲート電極
12 ドレインコンタクト層
13 N型ソース領域
14 P+領域
15 層間絶縁膜
16 ビア
Claims (7)
- P型半導体基板に形成されたN型埋込層と、前記N型埋込層上に形成されたエピタキシャル層からなるドレイン領域と、前記ドレイン領域内に形成されたP型ボディ領域及びN型ドレイン引き出し領域と、前記P型ボディ領域内に形成されたN型ソース領域と、前記N型ソース領域と前記N型ドレイン引き出し領域との間の領域上の少なくとも一部にゲート絶縁膜を介して形成されたゲート電極と、前記P型ボディ領域と前記N型ドレイン引き出し領域との間のドリフト領域と、を少なくとも有する二重拡散型MOSFETにおいて、
前記N型埋込層は、そのN型不純物濃度が、前記ドリフト領域下層よりも前記P型ボディ領域下層の方が低くなるように形成されていることを特徴とする二重拡散型MOSFET。 - 前記N型埋込層が、前記エピタキシャル層の成長前に前記P型半導体基板の一部に形成されるN型高濃度埋込層と、前記N型高濃度埋込層から不純物が拡散して形成される、前記N型高濃度埋込層よりも不純物濃度が低い拡散領域とからなり、前記P型ボディ領域下層の少なくとも一部には前記拡散領域のみが存在することを特徴とする請求項1記載の二重拡散型MOSFET。
- 前記N型高濃度埋込層が、前記P型ボディ領域下層において、前記拡散領域によって接続されていることを特徴とする請求項2記載の二重拡散型MOSFET。
- 前記拡散領域が、前記P型ボディ領域下層において、前記拡散領域よりもさらに不純物濃度の低い領域によって分離されていることを特徴とする請求項2記載の二重拡散型MOSFET。
- P型半導体基板表層にN型高濃度埋込層を形成する工程と、
前記N型高濃度埋込層上にエピタキシャル層からなるドレイン領域を形成する工程と、
前記ドレイン領域内に、P型不純物を注入してP型ボディ領域を形成する工程と、
前記ドレイン領域内に、N型不純物を注入してN型ドレイン引き出し領域を形成する工程と、
前記P型ボディ領域内に、N型不純物を注入してN型ソース領域を形成する工程と、
前記N型ソース領域と前記N型ドレイン引き出し領域との間の領域上の少なくとも一部にゲート絶縁膜を介してゲート電極を形成する工程と、を少なくとも有する二重拡散型MOSFETの製造方法において、
前記N型高濃度埋込層を、前記P型ボディ領域下層の少なくとも一部を除いて形成することを特徴とする二重拡散型MOSFETの製造方法。 - P型半導体基板表層にN型高濃度埋込層を形成する工程と、
前記N型高濃度埋込層上にP型エピタキシャル層を形成する工程と、
前記P型エピタキシャル層にN型不純物を注入する工程と、
熱処理によって、前記P型エピタキシャル層に前記N型不純物を拡散させてドレイン領域を形成すると共に、前記N型高濃度埋込層からN型不純物を拡散させて、前記N型高濃度埋込層よりも不純物濃度が低い拡散領域を前記N型高濃度埋込層周囲に形成する工程と、
前記ドレイン領域内に、P型不純物を注入してP型ボディ領域を形成する工程と、
前記ドレイン領域内に、N型不純物を注入してN型ドレイン引き出し領域を形成する工程と、
前記P型ボディ領域内に、N型不純物を注入してN型ソース領域を形成する工程と、
前記N型ソース領域と前記N型ドレイン引き出し領域との間の領域上の少なくとも一部にゲート絶縁膜を介してゲート電極を形成する工程と、を少なくとも有する二重拡散型MOSFETの製造方法において、
前記N型高濃度埋込層を、前記P型ボディ領域下層の少なくとも一部を除いて形成することを特徴とする二重拡散型MOSトランジスタの製造方法。 - 前記N型高濃度埋込層が形成されない領域が前記拡散領域で埋設される温度又は時間で、前記熱処理を行うことを特徴とする請求項6記載の二重拡散型MOSFETの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003346493A JP4800566B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体装置及びその製造方法 |
US10/958,732 US7126191B2 (en) | 2003-10-06 | 2004-10-06 | Double-diffused semiconductor device |
CNB2004100833948A CN100438072C (zh) | 2003-10-06 | 2004-10-08 | 半导体器件及其制作方法 |
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JP2003346493A JP4800566B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005116651A true JP2005116651A (ja) | 2005-04-28 |
JP4800566B2 JP4800566B2 (ja) | 2011-10-26 |
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JP2003346493A Expired - Fee Related JP4800566B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体装置及びその製造方法 |
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US (1) | US7126191B2 (ja) |
JP (1) | JP4800566B2 (ja) |
CN (1) | CN100438072C (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101128694B1 (ko) * | 2009-11-17 | 2012-03-23 | 매그나칩 반도체 유한회사 | 반도체 장치 |
CN102280477B (zh) * | 2010-06-09 | 2013-09-11 | 旺宏电子股份有限公司 | 一种半导体装置 |
US8354716B2 (en) * | 2010-07-02 | 2013-01-15 | Macronix International Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
US8921933B2 (en) * | 2011-05-19 | 2014-12-30 | Macronix International Co., Ltd. | Semiconductor structure and method for operating the same |
CN104979376B (zh) * | 2014-04-02 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | 绝缘栅双极晶体管及其形成方法 |
KR102177257B1 (ko) | 2014-04-15 | 2020-11-10 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US10211058B2 (en) * | 2015-04-07 | 2019-02-19 | Nxp Usa, Inc. | ESD protection device |
US10297676B2 (en) * | 2015-09-11 | 2019-05-21 | Nxp Usa, Inc. | Partially biased isolation in semiconductor device |
US10217860B2 (en) | 2015-09-11 | 2019-02-26 | Nxp Usa, Inc. | Partially biased isolation in semiconductor devices |
US9831232B2 (en) | 2015-10-02 | 2017-11-28 | Nxp Usa, Inc. | ESD protection device |
US11557662B2 (en) * | 2020-11-02 | 2023-01-17 | Texas Instruments Incorporated | Junction field effect transistor on silicon-on-insulator substrate |
Citations (4)
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JPH08330444A (ja) * | 1995-05-02 | 1996-12-13 | Sgs Thomson Microelettronica Spa | グラウンドポテンシャルに接続されていないソース又はドレーンを有するHVp−チャンネル及びn−チャンネルデバイスを含む薄いエピタキシャルRESURF集積回路 |
JP2000091414A (ja) * | 1998-09-09 | 2000-03-31 | Nec Corp | 半導体装置及びその製造方法 |
JP2000315792A (ja) * | 1999-05-06 | 2000-11-14 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
JP2002158348A (ja) * | 2000-11-21 | 2002-05-31 | Mitsubishi Electric Corp | 半導体装置 |
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US5132235A (en) * | 1987-08-07 | 1992-07-21 | Siliconix Incorporated | Method for fabricating a high voltage MOS transistor |
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US5517046A (en) * | 1993-11-19 | 1996-05-14 | Micrel, Incorporated | High voltage lateral DMOS device with enhanced drift region |
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JP3831598B2 (ja) * | 2000-10-19 | 2006-10-11 | 三洋電機株式会社 | 半導体装置とその製造方法 |
JP5183835B2 (ja) * | 2000-11-02 | 2013-04-17 | ローム株式会社 | 半導体装置およびその製造方法 |
US20020053695A1 (en) * | 2000-11-07 | 2002-05-09 | Chorng-Wei Liaw | Split buried layer for high voltage LDMOS transistor |
US6870218B2 (en) * | 2002-12-10 | 2005-03-22 | Fairchild Semiconductor Corporation | Integrated circuit structure with improved LDMOS design |
KR100948139B1 (ko) * | 2003-04-09 | 2010-03-18 | 페어차일드코리아반도체 주식회사 | 높은 브레이크다운 전압 및 낮은 온 저항을 위한 다중전류 이동 경로를 갖는 수평형 이중-확산 모스 트랜지스터 |
DE10345347A1 (de) * | 2003-09-19 | 2005-04-14 | Atmel Germany Gmbh | Verfahren zur Herstellung eines DMOS-Transistors mit lateralem Driftregionen-Dotierstoffprofil |
-
2003
- 2003-10-06 JP JP2003346493A patent/JP4800566B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-06 US US10/958,732 patent/US7126191B2/en not_active Expired - Fee Related
- 2004-10-08 CN CNB2004100833948A patent/CN100438072C/zh not_active Expired - Fee Related
Patent Citations (4)
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JPH08330444A (ja) * | 1995-05-02 | 1996-12-13 | Sgs Thomson Microelettronica Spa | グラウンドポテンシャルに接続されていないソース又はドレーンを有するHVp−チャンネル及びn−チャンネルデバイスを含む薄いエピタキシャルRESURF集積回路 |
JP2000091414A (ja) * | 1998-09-09 | 2000-03-31 | Nec Corp | 半導体装置及びその製造方法 |
JP2000315792A (ja) * | 1999-05-06 | 2000-11-14 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
JP2002158348A (ja) * | 2000-11-21 | 2002-05-31 | Mitsubishi Electric Corp | 半導体装置 |
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US20050082603A1 (en) | 2005-04-21 |
CN1606171A (zh) | 2005-04-13 |
US7126191B2 (en) | 2006-10-24 |
CN100438072C (zh) | 2008-11-26 |
JP4800566B2 (ja) | 2011-10-26 |
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