JP2003096313A5 - 薄膜トランジスタ素子 - Google Patents

薄膜トランジスタ素子 Download PDF

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Publication number
JP2003096313A5
JP2003096313A5 JP2001295899A JP2001295899A JP2003096313A5 JP 2003096313 A5 JP2003096313 A5 JP 2003096313A5 JP 2001295899 A JP2001295899 A JP 2001295899A JP 2001295899 A JP2001295899 A JP 2001295899A JP 2003096313 A5 JP2003096313 A5 JP 2003096313A5
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JP
Japan
Prior art keywords
thin film
film transistor
transistor element
polymer
transistor device
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JP2001295899A
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JP2003096313A (ja
JP5061414B2 (ja
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Priority claimed from JP2001295899A external-priority patent/JP5061414B2/ja
Priority to JP2001295899A priority Critical patent/JP5061414B2/ja
Priority to KR1020047004449A priority patent/KR100865500B1/ko
Priority to EP02768046A priority patent/EP1449887B1/en
Priority to PCT/JP2002/009851 priority patent/WO2003029354A1/ja
Priority to AT02768046T priority patent/ATE489431T1/de
Priority to DE60238437T priority patent/DE60238437D1/de
Priority to CNB02818923XA priority patent/CN1300254C/zh
Priority to US10/491,084 priority patent/US7282742B2/en
Publication of JP2003096313A publication Critical patent/JP2003096313A/ja
Publication of JP2003096313A5 publication Critical patent/JP2003096313A5/ja
Publication of JP5061414B2 publication Critical patent/JP5061414B2/ja
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Expired - Fee Related legal-status Critical Current

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【特許請求の範囲】
【請求項１】単層カーボンナノチューブおよび／または多層カーボンナノチューブと重合体とからなり、該カーボンナノチューブの重量分率が重合体に対し０．１％以上７％以下である重合体コンポジットを半導体素材として用いた薄膜トランジスタ素子。
【請求項２】重合体が共役系高分子からなる請求項１記載の薄膜トランジスタ素子。
【請求項３】共役系高分子が螺旋構造を持つ高分子である請求項２記載の薄膜トランジスタ素子。
【０００１】
【発明の属する技術分野】
本発明は、カーボンナノチューブと重合体からなる重合体コンポジットを半導体素材として用いた薄膜トランジスタ素子に関する。
【０００６】
【課題を解決するための手段】
上記課題を達成するために、本発明は下記の構成からなる。
（１）単層カーボンナノチューブおよび／または多層カーボンナノチューブと重合体とからなり、該カーボンナノチューブの重量分率が重合体に対し０．１％以上７％以下である重合体コンポジットを半導体素材として用いた薄膜トランジスタ素子。
（２）重合体が共役系高分子からなる上記（１）の薄膜トランジスタ素子。
（３）共役系高分子が螺旋構造を持つ高分子である上記（２）の薄膜トランジスタ素子。
JP2001295899A 2001-09-27 2001-09-27 薄膜トランジスタ素子 Expired - Fee Related JP5061414B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001295899A JP5061414B2 (ja) 2001-09-27 2001-09-27 薄膜トランジスタ素子
CNB02818923XA CN1300254C (zh) 2001-09-27 2002-09-25 有机半导体材料及使用该材料的有机半导体元件
EP02768046A EP1449887B1 (en) 2001-09-27 2002-09-25 Organic semiconductor material and organic semiconductor element employing the same
PCT/JP2002/009851 WO2003029354A1 (en) 2001-09-27 2002-09-25 Organic semiconductor material and organic semiconductor element employing the same
AT02768046T ATE489431T1 (de) 2001-09-27 2002-09-25 Organisches halbleitermaterial und organisches halbleiterelement, bei dem dieses eingesetzt wird
DE60238437T DE60238437D1 (de) 2001-09-27 2002-09-25 Organisches halbleitermaterial und organisches hal
KR1020047004449A KR100865500B1 (ko) 2001-09-27 2002-09-25 유기 반도체 소재 및 이것을 사용한 유기 반도체 소자
US10/491,084 US7282742B2 (en) 2001-09-27 2002-09-25 Organic semiconductor material and organic semiconductor element employing the same including carbon nanotubes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001295899A JP5061414B2 (ja) 2001-09-27 2001-09-27 薄膜トランジスタ素子

Publications (3)

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JP2003096313A JP2003096313A (ja) 2003-04-03
JP2003096313A5 true JP2003096313A5 (ja) 2008-11-06
JP5061414B2 JP5061414B2 (ja) 2012-10-31

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JP2001295899A Expired - Fee Related JP5061414B2 (ja) 2001-09-27 2001-09-27 薄膜トランジスタ素子

Country Status (8)

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US (1) US7282742B2 (ja)
EP (1) EP1449887B1 (ja)
JP (1) JP5061414B2 (ja)
KR (1) KR100865500B1 (ja)
CN (1) CN1300254C (ja)
AT (1) ATE489431T1 (ja)
DE (1) DE60238437D1 (ja)
WO (1) WO2003029354A1 (ja)

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