JP2002231850A - Semiconductor device storing wiring board - Google Patents

Semiconductor device storing wiring board

Info

Publication number
JP2002231850A
JP2002231850A JP2001022425A JP2001022425A JP2002231850A JP 2002231850 A JP2002231850 A JP 2002231850A JP 2001022425 A JP2001022425 A JP 2001022425A JP 2001022425 A JP2001022425 A JP 2001022425A JP 2002231850 A JP2002231850 A JP 2002231850A
Authority
JP
Japan
Prior art keywords
wiring board
radiator
thermal expansion
semiconductor element
heat radiator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001022425A
Other languages
Japanese (ja)
Inventor
Masahiko Azuma
昌彦 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001022425A priority Critical patent/JP2002231850A/en
Publication of JP2002231850A publication Critical patent/JP2002231850A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device storing wiring board capable of maintaining a stable connection state firmly and over a long period of time even for the application of a thermal cycle due to the operation/stop of a semiconductor device for the connection of the wiring board and an outside circuit board. SOLUTION: A radiator 13 comprises the joined body of a metal member and a ceramic member, and when the thermal expansion coefficient of the whole radiator 13 is α1 and the thermal expansion coefficient of an insulation board 5 is α2, the relation of α1<=α2 is satisfied.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、半導体素子が搭載
されるとともに、熱放散のための放熱体を具備してなる
半導体素子収納用配線基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board for housing a semiconductor element, on which a semiconductor element is mounted and which is provided with a radiator for dissipating heat.

【０００２】[0002]

【従来技術】従来より、半導体素子などを搭載する配線
基板は、セラミックスや有機樹脂からなる絶縁基板の表
面や内部に配線回路層が形成された構造からなり、例え
ば、配線回路層としてタングステンやモリブデン等の高
融点金属を用いたアルミナセラミックス、銅、銀などの
低抵抗金属を使用し、１０００℃以下での焼成が可能な
ガラスセラミックス、そして、微細配線化に有利な銅箔
を利用した有機樹脂が用いられている。2. Description of the Related Art Conventionally, a wiring board on which a semiconductor element or the like is mounted has a structure in which a wiring circuit layer is formed on the surface or inside of an insulating substrate made of ceramic or organic resin. For example, tungsten or molybdenum is used as the wiring circuit layer. Alumina ceramics with high melting point metal such as Alumina, glass ceramics that can be fired at 1000 ° C or less using low resistance metal such as copper and silver, and organic resin using copper foil which is advantageous for fine wiring Is used.

【０００３】さらに、近年、半導体素子の高集積化、高
速化による発熱の増加に伴い、この半導体素子およびそ
の近傍での温度上昇を抑制する必要がある。そのため、
配線基板の放熱性を高めるために、この配線基板の主面
に放熱体が設けられ、放熱性の改善が図られている。Further, in recent years, with the increase in heat generation due to high integration and high speed operation of a semiconductor element, it is necessary to suppress a temperature rise in the semiconductor element and its vicinity. for that reason,
In order to enhance the heat dissipation of the wiring board, a heat radiator is provided on the main surface of the wiring board to improve the heat dissipation.

【０００４】このような放熱体の材料として、例えば、
銅、銅―タングステン焼結体、あるいはＡｌＳｉＣが用
いられており、特に、熱伝導率が高く、熱放散性に優
れ、低コストという点で銅が好適に使用されている。As a material of such a heat radiator, for example,
Copper, a copper-tungsten sintered body, or AlSiC is used. In particular, copper is suitably used in terms of high thermal conductivity, excellent heat dissipation, and low cost.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、このよ
うな放熱体として、例えば、銅を用いた場合、銅は熱伝
導率が３９３Ｗ／ｍ・Ｋと、高い熱伝導性を有している
ものの、熱膨張係数が１７×１０-6（／℃）と高いため
に、放熱体が設けられている絶縁基板（例えば、アルミ
ナセラミックス：７×１０-6（／℃））との熱膨張差が
大きいため、この熱膨張係数の差により発生する応力の
ために、放熱体と配線基板とを接着している接着剤ある
いは配線基板にクラックが発生し破壊に至る恐れがあ
る。However, when copper is used as such a radiator, for example, copper has a high thermal conductivity of 393 W / m · K, Since the coefficient of thermal expansion is as high as 17 × 10 −6 (/ ° C.), the difference in thermal expansion from the insulating substrate (for example, alumina ceramic: 7 × 10 −6 (/ ° C.)) provided with the heat radiator is large. Therefore, there is a possibility that cracks may be generated in the adhesive bonding the heat radiator and the wiring substrate or the wiring substrate to cause breakage due to the stress generated by the difference in the thermal expansion coefficient.

【０００６】また、銅からなる放熱体を配線基板の上面
側に設け、さらに、この配線基板の下面側に複数の半田
ボール等の接続端子を介して外部回路基板（熱膨張係
数：１４〜１６×１０-6（／℃））に接続した半導体素
子収納用配線基板では、半導体素子が作動する際に発生
する熱がこの半導体素子収納用配線基板に繰り返し印加
された場合、あるいは、このような半導体素子収納用配
線基板が温度サイクル試験等の信頼性試験に投入され、
強制的に温度変化が加えられた場合に、半導体素子収納
用配線基板を構成する部材の熱膨張係数の大小関係が、
配線基板＜外部回路基板＜放熱体の順であるために、特
に、冷却時に、上部側の放熱体ならびに下部側の外部回
路基板が、配線基板に向かって凸に変形し易くなるため
に、配線基板が放熱体と外部回路基板の両方から逆向き
の力を受け、接続端子に高い応力が発生し破壊するとい
う問題があった。Further, a heat radiator made of copper is provided on the upper surface side of the wiring board, and the external circuit board (coefficient of thermal expansion: 14 to 16) is provided on the lower surface side of the wiring board via a plurality of connection terminals such as solder balls. × 10 −6 (/ ° C.)), the heat generated when the semiconductor element operates is repeatedly applied to the semiconductor element housing wiring board, The wiring board for storing semiconductor elements is put into reliability tests such as temperature cycle tests,
When the temperature change is forcibly applied, the magnitude relation of the thermal expansion coefficients of the members constituting the semiconductor element housing wiring board is as follows.
Since wiring board <external circuit board <radiator, the upper heat sink and the lower external circuit board tend to be convexly deformed toward the wiring board during cooling. There is a problem that the substrate receives a reverse force from both the heat radiator and the external circuit substrate, and a high stress is generated in the connection terminal and the connection terminal is broken.

【０００７】また、銅よりも熱膨張係数の低い銅−タン
グステン焼結体（熱膨張係数７×１０-6／℃、熱伝導率
１８０Ｗ／ｍ・Ｋ）を用いた場合、放熱体の熱膨張係数
が配線基板の熱膨張係数と近くなり、応力は低減される
ものの、銅―タングステン焼結体の比重が１５と、銅
（比重：８．９）に比較して著しく大きいことから、半
導体素子ならびに放熱体を設けた配線基板を外部回路基
板に実装する際に半田ボールで形成された接続端子が、
その放熱体の重量のために変形し、配線基板と外部回路
基板との間で、隣接する接続端子同士がショートすると
いう問題があった。When a copper-tungsten sintered body (coefficient of thermal expansion: 7 × 10 −6 / ° C., thermal conductivity: 180 W / m · K) having a lower coefficient of thermal expansion than copper is used, the thermal expansion of the radiator is increased. Although the coefficient is close to the coefficient of thermal expansion of the wiring board and the stress is reduced, the specific gravity of the copper-tungsten sintered body is 15 which is significantly higher than that of copper (specific gravity: 8.9). Also, when mounting the wiring board provided with the heat radiator on the external circuit board, the connection terminals formed by solder balls,
There is a problem that the heat dissipating body is deformed due to the weight thereof and adjacent connection terminals are short-circuited between the wiring board and the external circuit board.

【０００８】さらに、放熱体として、ＳｉＣ粉末の成形
体に、溶融した金属アルミニウムを含浸させて形成した
ＡｌＳｉＣ（熱膨張係数７×１０-6／℃、熱伝導率１５
０Ｗ／ｍ・Ｋ、比重２．８）を用いた場合、比重が小さ
いために、銅や銅―タングステン焼結体を用いた場合の
ような上記の問題は軽減されるが、ＡｌＳｉＣは熱伝導
率が低く、高コストであり、近年、高性能化と低コスト
化を両輪として改良されている半導体素子収納用配線基
板に用いることは困難となっている。Further, as a heat radiator, AlSiC (thermal expansion coefficient: 7 × 10 −6 / ° C., thermal conductivity: 15 × 10 −6 / ° C.) formed by impregnating molten metal aluminum into a molded body of SiC powder.
When 0 W / m · K and specific gravity of 2.8) are used, since the specific gravity is small, the above-mentioned problems, such as when copper or a copper-tungsten sintered body is used, are reduced, but AlSiC has thermal conductivity. In recent years, it has been difficult to use a semiconductor device housing wiring board which has been improved in both performance and cost reduction because of its low rate and high cost.

【０００９】従って、本発明は、配線基板と外部回路基
板の接続に対して、半導体素子を作動／停止による熱サ
イクルの印加に対しても、強固にかつ長期にわたり安定
した接続状態を維持できる半導体素子収納用配線基板を
提供することを目的とするものである。Accordingly, the present invention provides a semiconductor which can maintain a strong and stable connection state for a long period of time even in connection with a connection between a wiring board and an external circuit board and application of a thermal cycle by operating / stopping a semiconductor element. It is an object of the present invention to provide a wiring board for element storage.

【００１０】[0010]

【課題を解決するための手段】本発明の半導体素子収納
用配線基板では、略中央部に開口部を有する絶縁基板の
表面および内部に配線回路層が形成された配線基板と、
前記開口部を閉じるように前記配線基板の一方主面に接
合され、且つ前記開口部側に半導体素子が搭載される放
熱体と、前記配線基板の他方主面に設けられた接続端子
と、を具備する半導体素子収納用配線基板であって、前
記放熱体が金属部材とセラミックス部材との接合体から
なり、且つ前記放熱体全体の熱膨張係数をα１、前記絶
縁基板の熱膨張係数をα２とした時に、α１≦α２の関
係を満足することが重要である。According to the present invention, there is provided a wiring board for housing a semiconductor element, wherein a wiring circuit layer is formed on the surface and inside of an insulating substrate having an opening at a substantially central portion;
A radiator that is joined to one main surface of the wiring board so as to close the opening and has a semiconductor element mounted on the opening side, and a connection terminal provided on the other main surface of the wiring board. A wiring board for housing semiconductor elements, wherein the radiator comprises a joined body of a metal member and a ceramic member, and the thermal expansion coefficient of the entire radiator is α1, and the thermal expansion coefficient of the insulating substrate is α2. At this time, it is important to satisfy the relationship α1 ≦ α2.

【００１１】このような構成によれば、放熱体として銅
を用いても、放熱体全体の熱膨張係数を低下させること
ができ、これにより放熱体と配線基板との熱膨張差が小
さくなり、発生する応力が低減されるため、絶縁基板の
クラックや接続端子の破壊が抑制され、半導体素子収納
用配線基板の接続信頼性を高めることができる。According to such a configuration, even when copper is used as the heat radiator, the thermal expansion coefficient of the entire heat radiator can be reduced, thereby reducing the difference in thermal expansion between the heat radiator and the wiring board. Since the generated stress is reduced, cracks in the insulating substrate and destruction of the connection terminals are suppressed, and the connection reliability of the wiring board for housing semiconductor elements can be improved.

【００１２】上記半導体素子収納用配線基板では、金属
部材およびセラミックス部材のそれぞれの熱膨張係数を
α３およびα４とした時に、α３＞α４の関係を満足す
ることが望ましく、このような関係を満足する部材によ
り放熱体を形成することにより、放熱体の熱膨張係数を
調整するこができ、種々の熱膨張係数を有する絶縁基板
に対しても、適正な放熱体を形成することができる。In the wiring board for housing a semiconductor element, when the thermal expansion coefficients of the metal member and the ceramic member are α3 and α4, respectively, it is desirable that the relationship α3> α4 is satisfied, and such a relationship is satisfied. By forming the heat radiator with the members, the coefficient of thermal expansion of the heat radiator can be adjusted, and an appropriate heat radiator can be formed even for insulating substrates having various thermal expansion coefficients.

【００１３】上記半導体素子収納用配線基板では、放熱
体が、セラミックス部材からなる枠体と、該枠体の内側
に形成された金属部材からなる嵌込体との接合体である
ことが望ましい。このように高熱膨張性の金属部材を低
膨張性のセラミックス部材の内側に配置することにより
金属部材を具備する放熱体の熱膨張率を低減できるとと
もに、高熱伝導率の金属部材の直上に半導体素子を配置
させることができるために、高い効率で放熱を行うこと
ができる。In the above-mentioned wiring board for housing semiconductor elements, it is desirable that the heat radiator is a joined body of a frame made of a ceramic member and a fitting body made of a metal member formed inside the frame. By arranging the metal member having high thermal expansion inside the ceramic member having low expansion as described above, the thermal expansion coefficient of the radiator having the metal member can be reduced, and the semiconductor element can be disposed directly above the metal member having high thermal conductivity. Can be disposed, so that heat can be radiated with high efficiency.

【００１４】また、金属部材の周囲に、低熱膨張性のセ
ラミックス部材を配置することにより、内側の金属部材
の熱膨張を抑制するとともに、絶縁基板との接着部が主
にセラミックス部材とすることができ、放熱体と絶縁基
板との熱膨張係数差を小さくすることができる。Further, by arranging a ceramic member having low thermal expansion around the metal member, it is possible to suppress the thermal expansion of the inner metal member and to make the bonding portion with the insulating substrate mainly a ceramic member. As a result, the difference in thermal expansion coefficient between the radiator and the insulating substrate can be reduced.

【００１５】上記半導体素子収納用配線基板では、金属
部材がＣuあるいはＡｌ、セラミックス部材がＡｌ
2Ｏ3、Ｓｉ3Ｎ4、およびＡｌＮから選ばれる少なくとも
１種であり、金属部材の熱による膨張収縮をセラミック
ス部材により抑制されることが望ましい。高い熱伝導性
を有する放熱体を構成するための金属部材として、熱伝
導率が高く、安価なＣｕ、Ａｌが好適である。また、こ
れらの金属部材と組み合わせて接合体を形成した場合
に、高熱伝導性を有するとともに、温度サイクルなど環
境の変化に耐える高強度のセラミックス部材として、Ａ
ｌ2Ｏ3、ＳｉＮ、およびＡｌＮ等のセラミックスが用い
られ、原料価格が安価で、大気中の焼成が可能なＡｌ2
Ｏ3セラミックスが、特に、好適に用いられる。In the above-mentioned wiring board for housing semiconductor elements, the metal member is Cu or Al and the ceramic member is Al.
It is at least one selected from 2 O 3 , Si 3 N 4 , and AlN, and it is desirable that expansion and shrinkage of the metal member due to heat be suppressed by the ceramic member. As a metal member for constituting a heat radiator having high thermal conductivity, Cu and Al, which have high thermal conductivity and are inexpensive, are suitable. Further, when a joined body is formed in combination with these metal members, it has high thermal conductivity and is a high-strength ceramic member that can withstand environmental changes such as temperature cycles.
Ceramics such as l 2 O 3 , SiN, and AlN are used, and raw materials are inexpensive, and Al 2 can be fired in the air.
O 3 ceramics are particularly preferably used.

【００１６】上記半導体素子収納用配線基板では、放熱
体の厚みは１．５以下であることが望ましい。放熱体の
厚みを薄くすることにより、放熱体が反り変形し易くな
り、配線基板の熱膨張によって発生する応力を低減する
ことができる。In the above-mentioned wiring board for housing semiconductor elements, the thickness of the heat radiator is preferably 1.5 or less. By reducing the thickness of the heat radiator, the heat radiator is easily warped and deformed, and the stress generated by the thermal expansion of the wiring board can be reduced.

【００１７】上記半導体素子収納用配線基板では、放熱
体の比重が８以下であることが望ましい。In the wiring board for housing semiconductor elements, the specific gravity of the heat radiator is preferably 8 or less.

【００１８】放熱体の比重を軽くすることにより、体積
が大きく、高放熱性の放熱体が形成でき、また、配線基
板を外部回路基板に実装する際にも接続端子の変形が抑
制され、接続端子同士のショート不良を無くすことがで
きる。By reducing the specific gravity of the heat radiator, a heat radiator having a large volume and a high heat radiating property can be formed. Further, even when the wiring board is mounted on an external circuit board, the deformation of the connection terminal is suppressed, and the connection is improved. Short-circuit defects between terminals can be eliminated.

【００１９】上記半導体素子収納用配線基板では、配線
基板の一辺の寸法が３０ｍｍ以上である場合に好適に用
いることができる。絶縁基板に大型化にともなって、放
熱板と絶縁基板との間の応力が高くなるため、絶縁基板
のサイズが平面的に見て、特に有効である。The above-mentioned wiring board for housing semiconductor elements can be suitably used when the size of one side of the wiring board is 30 mm or more. As the size of the insulating substrate increases, the stress between the radiator plate and the insulating substrate increases, so that the size of the insulating substrate is particularly effective when viewed in plan.

【００２０】上記半導体素子収納用配線基板では、接続
端子が半田ボールからなることが望ましい。半導体素子
収納用配線基板に接続端子として半田ボールを用いるこ
とにより、外部回路基板への表面実装が可能となり半導
体素子の集積度の応じて接続端子数を容易に増やすこと
ができる。In the above-mentioned wiring board for housing semiconductor elements, it is desirable that the connection terminals are made of solder balls. By using solder balls as connection terminals in the wiring board for housing semiconductor elements, surface mounting on an external circuit board becomes possible, and the number of connection terminals can be easily increased according to the degree of integration of the semiconductor elements.

【００２１】[0021]

【発明の実施の形態】図１は、本発明の一例の半導体素
子収納用配線基板を外部回路基板に実装した時の概略断
面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic cross-sectional view when a wiring board for housing a semiconductor element according to an example of the present invention is mounted on an external circuit board.

【００２２】本発明における配線基板１は、略中央部に
開口部３を有する絶縁基板５の表面および内部に配線回
路層７が被着形成され、また、配線基板１の裏面には複
数の接続パッド９が配設され、さらには接続パッド９表
面には、それぞれ半田からなる接続端子１１が取着され
ている。In the wiring board 1 of the present invention, a wiring circuit layer 7 is formed on the surface and inside of an insulating substrate 5 having an opening 3 at a substantially central portion. Pads 9 are provided, and connection terminals 11 made of solder are attached to the surfaces of the connection pads 9.

【００２３】また、絶縁基板５の表面側には、開口部３
を塞ぐように、外形形状が四角形状の放熱体１３が、熱
硬化性樹脂を含む接着剤１５によって絶縁基板５の開口
部３の周囲にて接合されている。An opening 3 is provided on the front side of the insulating substrate 5.
A heat radiator 13 having a quadrangular outer shape is joined around the opening 3 of the insulating substrate 5 by an adhesive 15 containing a thermosetting resin so as to cover the opening 3.

【００２４】さらに、この放熱体１３の裏面、即ち、絶
縁基板５と接合される面側の中央部には、Ｓｉからなる
半導体素子１７がエポキシ樹脂などからなるダイ付剤１
９によって接着固定されている。さらに、半導体素子１
７と絶縁基板５とは金属からなるワイヤ２１にて配線回
路層７と電気的に接続されている。半導体素子１７は、
これらは封止樹脂２２により、完全に被覆されている。Further, on the back surface of the heat radiator 13, that is, on the central portion on the surface side to be joined to the insulating substrate 5, a semiconductor element 17 made of Si is provided with a die attaching agent 1 made of epoxy resin or the like.
9 for fixing. Further, the semiconductor element 1
7 and the insulating substrate 5 are electrically connected to the wiring circuit layer 7 by wires 21 made of metal. The semiconductor element 17
These are completely covered with the sealing resin 22.

【００２５】なお、上記配線基板１の接続端子１１を半
田などの導電性接着剤によって外部回路基板２３の表面
に形成されている導体層２４に接着固定することによっ
て、配線基板１は、外部回路基板２３の表面に実装され
る。The connection terminals 11 of the wiring board 1 are bonded and fixed to a conductor layer 24 formed on the surface of the external circuit board 23 by a conductive adhesive such as solder, so that the wiring board 1 It is mounted on the surface of the substrate 23.

【００２６】尚、この接続端子１１は太鼓状に形成さ
れ、配線基板１の周辺近傍に格子状に配列されている。
また、この接続端子１１を形成するには、略球形状の半
田ボールを用いて、半田ボールと配線基板１の接続パッ
ド９との間、および半田ボールと外部回路基板２３の導
体層２４との間の半田ペーストを塗布して形成される。The connection terminals 11 are formed in a drum shape, and are arranged in a lattice shape near the periphery of the wiring board 1.
In order to form the connection terminal 11, a substantially spherical solder ball is used to form a connection between the solder ball and the connection pad 9 of the wiring board 1 and between the solder ball and the conductor layer 24 of the external circuit board 23. It is formed by applying a solder paste between them.

【００２７】本発明によれば、上記構造の半導体素子収
納用配線基板において、放熱体１３が金属部材とセラミ
ックス部材との接合体からなり、且つこの放熱体１３全
体の熱膨張係数をα１、絶縁基板５の熱膨張係数をα２
とした時に、α１≦α２の関係を満足することが大きな
特徴である。According to the present invention, in the wiring board for housing a semiconductor element having the above structure, the radiator 13 is formed of a joined body of a metal member and a ceramic member. The coefficient of thermal expansion of the substrate 5 is α2
It is a great feature that the relationship of α1 ≦ α2 is satisfied.

【００２８】例えば、放熱体１３は、図２（ａ）の概略
断面図に示すように、セラミックス部材からなる枠体２
５と金属部材からなる嵌込体２７により構成されてい
る。For example, as shown in a schematic cross-sectional view of FIG.
5 and a fitting member 27 made of a metal member.

【００２９】この放熱体１３において、セラミックス部
材からなる枠体２５は、図２（ｂ）に示すように、その
中央部に四角形状の貫通口２９が形成され、この貫通口
２９には、厚み方向に段差が形成され、枠体２５の下面
側の開口面積が上面側の開口面積に比較して大きく開口
するように形成されている。また、この枠体２５に形成
された貫通口２９の４角部に円形状の貫通孔３１が形成
されている。このような構造にすることで、この貫通口
２９に組み込まれ、接合される嵌込体２７の専有領域を
増し、固定を容易にすることができる。As shown in FIG. 2B, in the heat radiator 13, the frame 25 made of a ceramic member has a rectangular through hole 29 formed in the center thereof, and the through hole 29 has a thickness. A step is formed in the direction, and the opening area on the lower surface side of the frame 25 is formed to be larger than the opening area on the upper surface side. In addition, a circular through hole 31 is formed at the four corners of the through hole 29 formed in the frame 25. With such a structure, the occupation area of the fitting body 27 that is incorporated into and joined to the through hole 29 can be increased, and the fixing can be easily performed.

【００３０】一方、金属部材からなる嵌込体２７は、図
２（ｃ）に示すように、セラミックス部材からなる枠体
２５に形成された四角形状の貫通口２９および円形状の
貫通孔３１に嵌合するように形成されている。尚、嵌合
とは、形状の合ったものが寸差無くぴったりと合わさっ
た状態をいう。On the other hand, as shown in FIG. 2C, the fitting body 27 made of a metal member is inserted into a square through hole 29 and a circular through hole 31 formed in a frame 25 made of a ceramic member. It is formed to fit. Note that the term “fitting” refers to a state in which objects having the same shape are fitted exactly without any difference.

【００３１】即ち、嵌込体２７の形状は、上面側と下面
側の面積が異なる四角形状の板体が重ねられて段差を有
する凸状の形状をなしており、その中段面の４角部に
は、枠体２５に嵌込体２７を固定するために、枠体２５
の貫通口２９に挿入される略円柱形状の突起３３が形成
されている。That is, the shape of the fitting body 27 is such that a square plate body having different areas on the upper surface side and the lower surface side is overlapped to form a convex shape having a step. In order to fix the fitting 27 to the frame 25,
A substantially cylindrical projection 33 to be inserted into the through hole 29 is formed.

【００３２】そして、この放熱体１３の中央部に形成さ
れた金属部材からなる嵌込体２７の上面に半導体素子１
７を接着固定することにより、半導体素子１７から発生
する熱を効果的に放散することが出来る。Then, the semiconductor element 1 is placed on the upper surface of the fitting body 27 made of a metal member formed at the center of the heat radiator 13.
By fixing the adhesive 7, the heat generated from the semiconductor element 17 can be effectively dissipated.

【００３３】また、放熱体１３を構成するセラミックス
部材の材質としては、Ａｌ2Ｏ3、Ｓｉ3Ｎ4、ＡｌＮ等の
高強度、高熱伝導性のセラミックスなどの電気絶縁材料
のいずれであってもよいが、配線基板１に設けられ、且
つ半導体素子１７が接着固定された構造においては、配
線基板１との熱膨張差を小さくし、低コストを図る上
で、セラミックス部材はＡｌ2Ｏ3からなることが望まし
い。The material of the ceramic member constituting the heat radiator 13 may be any of high-strength and high-thermal-conductivity ceramics such as Al 2 O 3 , Si 3 N 4 and AlN. However, in the structure provided on the wiring board 1 and the semiconductor element 17 is bonded and fixed, the ceramic member is made of Al 2 O 3 in order to reduce the difference in thermal expansion from the wiring board 1 and reduce the cost. It is desirable to become.

【００３４】また、これらのセラミックス部材の熱膨張
係数は１０×１０-6／℃以下、熱伝導率は２０Ｗ／ｍＫ
以上、およびヤング率は４００ＧＰａ以下であることが
好ましい。The thermal expansion coefficient of these ceramic members is 10 × 10 −6 / ° C. or less, and the thermal conductivity is 20 W / mK.
The above and the Young's modulus are preferably 400 GPa or less.

【００３５】一方、放熱体１３を構成する金属部材の材
質としては、Ｃｕ、Ａｌ等の高熱伝導性の金属材料のい
ずれであってもよいが、配線基板１に設けられ、且つ半
導体素子１１が接着固定された構造においては、エポキ
シ樹脂を介して配線基板１との接着性が高く、低コスト
を図る上で、金属部材はＣｕからなることが望ましい。On the other hand, the material of the metal member constituting the heat radiator 13 may be any of high thermal conductive metal materials such as Cu and Al, but is provided on the wiring board 1 and the semiconductor element 11 In the structure fixed by bonding, the metal member is desirably made of Cu from the viewpoint of high adhesiveness to the wiring board 1 via the epoxy resin and low cost.

【００３６】また、これらの金属部材の熱膨張係数は２
５×１０-6／℃以下、熱伝導率は１５０Ｗ／ｍＫ以上、
およびヤング率は２００ＧＰａ以下であることが好まし
い。The thermal expansion coefficient of these metal members is 2
5 × 10 −6 / ° C. or less, thermal conductivity 150 W / mK or more,
And Young's modulus is preferably 200 GPa or less.

【００３７】また、この放熱体１３が熱膨張係数の高い
金属部材と、熱膨張係数の低いセラミックス部材から構
成されるため、金属部材とセラミックス部材により放熱
体３全体の熱膨張係数を任意に調整することができ、種
々の熱膨張係数を有する絶縁基板５に対しても、適正な
熱膨張係数を有する放熱体１３を形成することができ
る。Since the radiator 13 is composed of a metal member having a high thermal expansion coefficient and a ceramic member having a low thermal expansion coefficient, the thermal expansion coefficient of the entire radiator 3 can be arbitrarily adjusted by the metal member and the ceramic member. The heat radiator 13 having an appropriate coefficient of thermal expansion can be formed on the insulating substrate 5 having various coefficients of thermal expansion.

【００３８】また、放熱体１３、配線基板１、および外
部回路基板２３のそれぞれの熱膨張係数を、上側からこ
の順になるように載置することにより、これら放熱体１
３、配線基板１、および外部回路基板２３のそれぞれの
反り形状をさらに近づけることができ、半導体素子収納
用配線基板の接続信頼性を向上できる。The radiator 13, the wiring board 1, and the external circuit board 23 are placed so that their thermal expansion coefficients are in this order from the upper side.
3, the warp shapes of the wiring board 1 and the external circuit board 23 can be made closer to each other, and the connection reliability of the wiring board for housing semiconductor elements can be improved.

【００３９】また、放熱体１３がセラミックス部材から
なる枠体２５と金属部材からなる嵌込体２７から構成さ
れ、嵌込体２７の主面に半導体素子１７を接着固定し、
配線基板１の開口部３に収容搭載することにより、半導
体素子１７から発生される熱を効果的に嵌込体２７から
放熱するとともに、セラミックス製の枠体２５を配線基
板１に接続しているために、放熱体１３と配線基板１と
の熱膨張係数差を小さくし、応力を抑制することが出来
る。The radiator 13 is composed of a frame 25 made of a ceramic member and a fitting body 27 made of a metal member, and the semiconductor element 17 is bonded and fixed to the main surface of the fitting body 27.
By being housed and mounted in the opening 3 of the wiring board 1, the heat generated from the semiconductor element 17 is effectively radiated from the fitting body 27 and the ceramic frame 25 is connected to the wiring board 1. Therefore, the difference in thermal expansion coefficient between the radiator 13 and the wiring board 1 can be reduced, and the stress can be suppressed.

【００４０】また、これら放熱体１３を構成するセラミ
ックス部材と金属部材とを嵌め込み固着する方法は、圧
入や焼きばめによるか、あるいは接着樹脂を用いて接合
する方法が用いられる。The method of fitting and fixing the ceramic member and the metal member constituting the heat radiator 13 is performed by press-fitting or shrink-fitting or by joining using an adhesive resin.

【００４１】また、放熱体１３の厚みは、配線基板１の
熱膨張によって反り変形し、応力を低減できるととも
に、破壊しない程度の機械的強度を保有するために、２
ｍｍ以下であることが望ましく、また、その放熱特性に
応じて適宜決定されるが、パッケージの軽量化および放
熱性との兼ね合いから、通常、０．３〜１．５ｍｍであ
ることが好適である。The thickness of the heat radiator 13 is set to 2 in order to reduce the stress due to warping and deformation due to the thermal expansion of the wiring board 1 and to maintain the mechanical strength to the extent that it is not broken.
mm or less, and is appropriately determined according to the heat radiation characteristics. However, from the viewpoint of lightening of the package and heat radiation, it is usually preferably 0.3 to 1.5 mm. .

【００４２】また、放熱体１３の比重は８以下が好適で
ある。近年、小型、軽量の所謂モバイル電子機器に使用
される半導体素子収納用配線基板用の部品として、軽量
であることも重要な要素であり、比重を小さくすること
により、実装時の接続端子１１の変形を抑制することが
できる。The specific gravity of the heat radiator 13 is preferably 8 or less. In recent years, as a component for a wiring board for housing a semiconductor element used in a so-called mobile electronic device which is small and light, it is also important that the component is lightweight, and by reducing the specific gravity, the connection terminal 11 at the time of mounting is reduced. Deformation can be suppressed.

【００４３】また、本発明の半導体素子収納用配線基板
では、配線基板１の一辺の寸法が３０ｍｍ以上である場
合に好適に用いることができる。絶縁基板５の一辺が３
０ｍｍ以上に大型化すると、特に有効である。The wiring board for housing a semiconductor element of the present invention can be suitably used when the size of one side of the wiring board 1 is 30 mm or more. One side of the insulating substrate 5 is 3
It is particularly effective to increase the size to 0 mm or more.

【００４４】また、放熱体１３の大きさは、面積比にし
て、配線基板１の大きさの９５％以下、あるいは、配線
基板１に形成された開口部９の大きさの１５０％以上で
あることが好ましい。The size of the heat radiator 13 is 95% or less of the size of the wiring board 1 or 150% or more of the size of the opening 9 formed in the wiring board 1 in terms of area ratio. Is preferred.

【００４５】また、図３（ａ）に示すように、放熱体１
３を配線基板１と接着する部分の枠体２５の厚みｔを中
央部の嵌込体２７よりも薄くすることにより、放熱体１
３の配線基板１との接合部付近における剛性を抑えるこ
とができ、放熱体３と配線基板１との接続信頼性を高め
ることが出来る。Further, as shown in FIG.
By making the thickness t of the frame body 25 at the portion where the base 3 is bonded to the wiring board 1 thinner than the fitting body 27 at the center, the radiator 1
3 can be suppressed in the vicinity of the joint with the wiring board 1, and the connection reliability between the heat radiator 3 and the wiring board 1 can be improved.

【００４６】また、放熱体１３の配線基板１との接合部
付近における剛性を抑える他の方法として、図３（ｂ）
に示すように、上記放熱体１３の配線基板１との接合部
付近に複数の孔３５を空けることもできる。この場合、
孔３５の大きさは大きいほど効果があり、数も多いほど
効果が表われる。また孔３５は貫通していることが望ま
しいが、貫通せず、凹状でもその効果は表われる。FIG. 3B shows another method for suppressing the rigidity of the heat radiator 13 near the joint with the wiring board 1.
As shown in (2), a plurality of holes 35 can be formed near the junction of the heat radiator 13 with the wiring board 1. in this case,
The effect increases as the size of the holes 35 increases, and the effect increases as the number of holes 35 increases. Although it is desirable that the hole 35 penetrates, the effect is exhibited even when the hole 35 does not penetrate and is concave.

【００４７】さらには、図３（ｃ）に示すように、放熱
体１３の接合部付近に溝３７を形成することによって
も、接合部において放熱体１３が撓みやすくなり、放熱
体１３の接合部の剛性を低下させる上で効果的である。Further, as shown in FIG. 3C, by forming the groove 37 near the joint of the heat radiator 13, the heat radiator 13 is easily bent at the joint, and the joint of the heat radiator 13 is formed. This is effective in lowering the rigidity of the device.

【００４８】尚、本発明は、上記例に限定されるもので
はなく、要旨を変更しない範囲で変更可能である。例え
ば、図４（ａ）、（ｂ）に示すように、板状の金属体３
９の内部に格子体４１あるいは円形体４３のセラミック
ス部材を埋設したものが好適に用いられる。It should be noted that the present invention is not limited to the above example, and can be changed without changing the gist. For example, as shown in FIG. 4A and FIG.
9 is preferably used in which a ceramic member of a lattice body 41 or a circular body 43 is embedded inside.

【００４９】また、この配線基板１に放熱体１３を接着
させるには、絶縁基板１３の表面に液状の熱硬化性樹脂
の接着剤を塗布した後、放熱体１３を載置して、５０〜
５００ｇの荷重をかけながら約１００〜２００℃の温度
に加熱することによりこの接着剤が完全に硬化して固定
される。In order to adhere the heat radiator 13 to the wiring board 1, a liquid thermosetting resin adhesive is applied to the surface of the insulating substrate 13 and then the heat radiator 13 is placed thereon.
By heating to a temperature of about 100 to 200 ° C. while applying a load of 500 g, the adhesive is completely cured and fixed.

【００５０】本発明の半導体素子収納用配線基板におい
て、配線基板１を構成する絶縁基板５の材質としては、
アルミナ（Ａｌ2Ｏ3）、窒化珪素（Ｓｉ3Ｎ4）、窒化ア
ルミニウム（ＡｌＮ）、および低温焼成可能なガラスセ
ラミックスなどの電気絶縁材料のいずれであってもよい
が、配線基板１が外部回路基板２３に実装された構造に
おいては、部品相互の熱膨張差を緩和し、発生する応力
を低減する上で絶縁基板５がガラスセラミックス焼結体
からなることが望ましく、これらの材料を用いて構成さ
れた配線基板１の熱膨張係数は、７〜１５×１０-6（／
℃）の範囲であることが望ましい。In the wiring board for housing semiconductor elements of the present invention, the material of the insulating substrate 5 constituting the wiring board 1 is as follows.
Any of electrical insulating materials such as alumina (Al 2 O 3 ), silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), and glass ceramics that can be fired at low temperature may be used. In the structure mounted on the substrate 23, the insulating substrate 5 is desirably made of a glass ceramic sintered body in order to alleviate the difference in thermal expansion between components and reduce the generated stress. The thermal expansion coefficient of the obtained wiring board 1 is 7 to 15 × 10 −6 (/
C).

【００５１】尚、一般に、配線基板１に半導体素子１７
を搭載している半導体素子収納用配線基板では、半導体
素子１７のサイズに比べて、配線基板１のサイズが大き
く、それらの面積比率が大きくなっているために、半導
体素子収納用配線基板の熱膨張係数は主に絶縁基板５の
熱膨張係数で決定される。Generally, the semiconductor element 17 is mounted on the wiring board 1.
Since the size of the wiring board 1 and the area ratio thereof are larger than the size of the semiconductor element 17 in the wiring board for housing the semiconductor element, The expansion coefficient is determined mainly by the thermal expansion coefficient of the insulating substrate 5.

【００５２】また、この絶縁基板１は、特性上では有機
樹脂を含有する外部回路基板７に実装する場合の実装信
頼性を高める上で、４０〜４００℃の熱膨張係数が７×
１０ -6／℃以上、特に８×１０-6／℃であることが望ま
しい。またヤング率が２００ＭＰａ以下、特に１５０Ｍ
Ｐａ以下であることが使用時に発生する応力を低減する
ことができる。This insulating substrate 1 is organically
Mounting signal when mounting on external circuit board 7 containing resin
In order to enhance reliability, the thermal expansion coefficient at 40 to 400 ° C is 7 ×
10 -6/ ° C or higher, especially 8 × 10-6/ ° C is desirable
New In addition, the Young's modulus is 200 MPa or less, especially 150M
When the pressure is Pa or less, the stress generated during use is reduced.
be able to.

【００５３】また、配線回路層７および接続パッド９
は、絶縁基板１３の材質によって、タングステン
（Ｗ）、モリブデン（Ｍｏ）、銅（Ｃｕ）、銀（Ａｇ）
の群から選ばれる少なくとも１種の導体を選択して用い
ることができ、アルミナ（Ａｌ2Ｏ3）、窒化珪素（Ｓｉ
3Ｎ4）、窒化アルミニウム（ＡｌＮ）を主体とするセラ
ミックスに対しては、タングステン（Ｗ）またはモリブ
デン（Ｍｏ）を主として含有する導体が、また、１００
０℃以下での焼成が可能なガラスセラミックスなどの場
合には、銅（Ｃｕ）または銀（Ａｇ）を主体とする導体
を選択して用いることができる。The wiring circuit layer 7 and the connection pad 9
Are tungsten (W), molybdenum (Mo), copper (Cu), silver (Ag) depending on the material of the insulating substrate 13.
At least one conductor selected from the group consisting of alumina (Al 2 O 3 ), silicon nitride (Si
3 N 4), for a ceramic mainly containing aluminum nitride (AlN), a conductor containing tungsten (W) or molybdenum (Mo) primarily are also 100
In the case of a glass ceramic or the like that can be fired at 0 ° C. or lower, a conductor mainly composed of copper (Cu) or silver (Ag) can be selected and used.

【００５４】また、外部回路基板２３は、いわゆるプリ
ント基板からなり、ガラス・エポキシ樹脂、ガラス・ポ
リイミド樹脂複合材料、およびアラミド繊維などの有機
樹脂を含む材料からなる絶縁基板５の表面および内部
に、Ｃｕ、Ａｕ、Ａｌ、Ｎｉ、Ｓｎ−Ｐｂなどの金属か
らなる導体層２４が被着形成されたものであり、熱膨張
係数は１２〜１７×１０-6（／℃）の範囲が望ましい。The external circuit board 23 is made of a so-called printed board, and is provided on the surface and inside of the insulating board 5 made of a material containing an organic resin such as a glass-epoxy resin, a glass-polyimide resin composite material, and aramid fiber. A conductor layer 24 made of a metal such as Cu, Au, Al, Ni, or Sn—Pb is formed thereon, and its thermal expansion coefficient is preferably in a range of 12 to 17 × 10 −6 (/ ° C.).

【００５５】このように、熱膨張係数が１２〜１７×１
０-6（／℃）の範囲の外部回路基板７を用いることによ
り、放熱体１３、配線基板１、および外部回路基板２３
のそれぞれの熱膨張係数をα１、α２、およびα５とし
た時に、α１＜α２＜α５の関係を満足することがで
き、これにより、放熱体１３、配線基板１、および外部
回路基板２３の反り形状を近づけることができるため
に、半導体素子収納用配線基板の接続信頼性を向上でき
る。As described above, the coefficient of thermal expansion is 12 to 17 × 1
By using the external circuit board 7 in the range of 0 −6 (/ ° C.), the heat radiator 13, the wiring board 1, and the external circuit board 23
When the respective thermal expansion coefficients are α1, α2, and α5, the relationship of α1 <α2 <α5 can be satisfied, whereby the warped shape of the radiator 13, the wiring board 1, and the external circuit board 23 can be satisfied. Can be brought close to each other, so that the connection reliability of the wiring board for housing semiconductor elements can be improved.

【００５６】また、外部回路基板２３の厚みは、配線基
板１の熱膨張によって反り変形し、応力を低減できると
ともに、破壊しない程度の機械的強度を保持するため
に、０．５〜２ｍｍの範囲が望ましい。The thickness of the external circuit board 23 is in the range of 0.5 to 2 mm so that the wiring board 1 can be warped and deformed due to thermal expansion, reduce stress and maintain mechanical strength that does not cause breakage. Is desirable.

【００５７】そして、実装面の平坦性を保持したり、実
装操作での変形を防止するために、外部回路基板７のヤ
ング率は、１０〜３０ＧＰａが望ましい。The Young's modulus of the external circuit board 7 is preferably 10 to 30 GPa in order to maintain the flatness of the mounting surface and to prevent deformation during the mounting operation.

【００５８】放熱体１３を配線基板１に接着固定するた
めの接着剤１５は、粒度分布を調整した球状のシリカ粉
末にエポキシ樹脂を混合したものが主に用いられる。こ
の混合系において、シリカ粉末の混合比率を調整するこ
とによって、接着剤１５の熱膨張係数を容易に変更する
ことが出来る。また、この放熱体１３に半導体素子１７
を接着固定するための接着剤１５は、粒度分布を調整し
た球状のシリカ粉末に金属シリコンを加え、エポキシ樹
脂を混合したものが主に用いられる。As the adhesive 15 for bonding and fixing the heat radiator 13 to the wiring board 1, a mixture of an epoxy resin and a spherical silica powder whose particle size distribution is adjusted is mainly used. In this mixed system, the thermal expansion coefficient of the adhesive 15 can be easily changed by adjusting the mixing ratio of the silica powder. Also, a semiconductor element 17 is provided on the radiator 13.
Adhesive 15 for adhering and fixing is mainly formed by adding metallic silicon to spherical silica powder whose particle size distribution is adjusted and mixing with epoxy resin.

【００５９】また、接着剤中のフィラーの含有量は、３
０〜９０体積％が適当であって、用いる樹脂のヤング率
に応じて上記の範囲でフィラー量を調整して接着剤の硬
化後のヤング率を上記の範囲に制御すればよい。The content of the filler in the adhesive is 3
The amount is preferably from 0 to 90% by volume, and the amount of the filler may be adjusted in the above range according to the Young's modulus of the resin to be used, and the Young's modulus after curing of the adhesive may be controlled in the above range.

【００６０】以上のように構成された半導体素子収納用
配線基板では、配線基板１の上面に設けられた放熱体１
３が、金属部材とセラミックス部材との接合体からな
り、且つ前記放熱体１３全体の熱膨張係数をα１、絶縁
基板５の熱膨張係数をα２とした時に、α１≦α２の関
係を満足するように、高熱膨張性の金属部材に低熱膨張
性のセラミックス部材を組み合わせることにより、放熱
体１３全体の熱膨張係数を低下させることができ、放熱
体１３と配線基板１との熱膨張差を低減し、発生する応
力が小さくし、絶縁基板５のクラックや接続端子１１の
破壊を抑制し、半導体素子収納用配線基板の接続信頼性
を高めることができる。In the wiring board for housing a semiconductor element configured as described above, the radiator 1 provided on the upper surface of the wiring board 1 is provided.
3 is made of a joined body of a metal member and a ceramic member, and when the thermal expansion coefficient of the entire radiator 13 is α1, and the thermal expansion coefficient of the insulating substrate 5 is α2, the relationship of α1 ≦ α2 is satisfied. In addition, by combining a high thermal expansion metal member with a low thermal expansion ceramic member, the thermal expansion coefficient of the entire radiator 13 can be reduced, and the difference in thermal expansion between the radiator 13 and the wiring board 1 can be reduced. In addition, the generated stress is reduced, cracks in the insulating substrate 5 and destruction of the connection terminals 11 are suppressed, and connection reliability of the wiring board for housing semiconductor elements can be improved.

【００６１】即ち、図５に示すように、配線基板１とと
もに、その上面に設けられた放熱体１３が配線基板１に
対して凹状に変形するとともに、外部回路基板２３も配
線基板１に追従して凸状に変形しやすくなり、これらの
配線基板１と外部回路基板２３との間の接続端子１１に
作用する歪みや応力を低減でき、半田ボール等で形成さ
れた接続端子１１の疲労断線を抑え、接続信頼性を飛躍
的に向上できる。That is, as shown in FIG. 5, together with the wiring board 1, the radiator 13 provided on the upper surface thereof is deformed into a concave shape with respect to the wiring board 1, and the external circuit board 23 follows the wiring board 1. It is easy to deform into a convex shape, and it is possible to reduce distortion and stress acting on the connection terminal 11 between the wiring board 1 and the external circuit board 23, and to reduce fatigue breakage of the connection terminal 11 formed by a solder ball or the like. It is possible to dramatically improve connection reliability.

【００６２】[0062]

【実施例】放熱体１３は、セラミックス部材からなる枠
体２５に金属部材からなる嵌込体２７をエポキシ樹脂を
用いて接着固定して表１に示す放熱体１３を作製した。EXAMPLE A radiator 13 shown in Table 1 was manufactured by bonding and fixing an insert 27 made of a metal member to a frame 25 made of a ceramic member by using an epoxy resin.

【００６３】このセラミックス部材からなる枠体２５
は、Ａｌ2Ｏ3（比重３．９５、熱膨張係数７×１０
-6（／℃））、Ｓｉ3Ｎ4（比重３．４、熱膨張係数３×
１０-6（／℃））、およびＡｌＮ（比重３、熱膨張係数
４．８×１０-6（／℃））等の粉末とポリビニルアルコ
ールバインダーを混合、粉体プレス成形により成形体を
作製した後、酸化性あるいは還元性の雰囲気下１６５０
℃で焼成して作製した。Frame 25 made of this ceramic member
Means Al 2 O 3 (specific gravity 3.95, coefficient of thermal expansion 7 × 10
-6 (/ ° C.)), Si 3 N 4 (specific gravity 3.4, coefficient of thermal expansion 3 ×)
10 -6 (/ ° C.)) and a powder such as AlN (specific gravity 3, thermal expansion coefficient 4.8 × 10 -6 (/ ° C.)) and a polyvinyl alcohol binder were mixed, and a compact was produced by powder press molding. After that, 1650 in an oxidizing or reducing atmosphere
It was prepared by firing at ℃.

【００６４】また、格子状あるいは円形状のアルミナセ
ラミックス部材も同様の方法により作製した。また、Ｃ
ｕ（比重８．９、熱膨張係数１７×１０-6（／℃））や
Ａｌ（比重２．７、熱膨張係数２３×１０-6（／℃））
の金属部材からなる嵌込体２７は、予め用意した厚み
０．５ｍｍの銅板をフライス加工することによって作製
した。尚、アルミナの絶縁材料を用いて配線基板１を作
製した場合には、絶縁基板５の熱膨張係数を考慮してガ
ラスセラミックスの配線基板１の場合よりもセラミック
ス部材の比率を高めて作製した。A lattice-shaped or circular alumina ceramic member was produced in the same manner. Also, C
u (specific gravity 8.9, coefficient of thermal expansion 17 × 10 −6 (/ ° C.)) and Al (specific gravity 2.7, coefficient of thermal expansion 23 × 10 −6 (/ ° C.))
The fitting body 27 made of the metal member was manufactured by milling a copper plate having a thickness of 0.5 mm prepared in advance. When the wiring board 1 was manufactured using an insulating material of alumina, the ratio of the ceramic members was made higher than that of the wiring board 1 made of glass ceramics in consideration of the thermal expansion coefficient of the insulating substrate 5.

【００６５】一方、配線基板１は、ＢａＯ系ガラス５０
体積％とクォーツ５０体積％からなる組成物を成形し、
９５０℃で焼成して作製したガラスセラミックス（熱膨
張係数１２×１０-6（／℃））およびアルミナセラミッ
クス（熱膨張係数１２×１０ -6（／℃））を絶縁基板１
３とし、その表面および内部に、ガラスセラミックス焼
結体と同時焼成によって銅メタライズからなる配線回路
層７を有する表１に示すサイズの配線基板１を作製し
た。尚、配線基板１の厚みは２ｍｍとした。On the other hand, the wiring board 1 is made of BaO-based glass 50.
Molding a composition consisting of 50% by volume of quartz and 50% by volume of quartz,
Glass ceramics produced by firing at 950 ° C (thermal expansion)
Tension coefficient 12 × 10-6(/ ° C)) and alumina ceramic
Box (coefficient of thermal expansion 12 × 10 -6(/ ° C)) on the insulating substrate 1
3 on the surface and inside
Wiring circuit made of copper metallization by co-firing and co-firing
The wiring board 1 having the size shown in Table 1 having the layer 7 was manufactured.
Was. The thickness of the wiring board 1 was 2 mm.

【００６６】また、この放熱体１３を構成する枠体２５
や嵌込体２７、および配線基板１を構成する絶縁材料の
熱膨張係数を熱機械分析法により−５０〜４００℃の範
囲で測定した。The frame 25 constituting the heat radiator 13
The coefficient of thermal expansion of the insulating material forming the insert 27, the insert 27, and the wiring board 1 was measured in the range of −50 to 400 ° C. by thermomechanical analysis.

【００６７】そして、この配線基板１の表面にエポキシ
樹脂を含む接着剤１５を塗布した後、この放熱体１３を
載置し、１５０℃、２時間の条件で接着剤を硬化接着さ
せた。Then, after applying an adhesive 15 containing an epoxy resin to the surface of the wiring board 1, the radiator 13 was placed, and the adhesive was cured and bonded at 150 ° C. for 2 hours.

【００６８】一方、Ｓｉからなる一辺が１３ｍｍの半導
体素子１７を準備し、前記放熱体１３上にエポキシ樹脂
からなる熱硬化性のダイ付剤１９にて１５０℃、１時間
の条件のもとで接着固定させた。On the other hand, a semiconductor element 17 made of Si and having a side of 13 mm is prepared, and a thermosetting die attaching agent 19 made of an epoxy resin is placed on the radiator 13 at 150 ° C. for 1 hour. The adhesive was fixed.

【００６９】その後、半導体素子１７の接続パッド９と
配線基板１表面の配線回路層７とを金線のワイヤボンデ
ィングによって電気的に接続し、さらにこの半導体素子
１７とワイヤボンディング部にエポキシ樹脂を含む封止
樹脂２２を被覆して１５０℃、３時間にて加熱硬化させ
て封止した。Thereafter, the connection pads 9 of the semiconductor element 17 and the wiring circuit layer 7 on the surface of the wiring board 1 are electrically connected by gold wire bonding, and the semiconductor element 17 and the wire bonding portion contain epoxy resin. The resin was covered with the sealing resin 22, cured by heating at 150 ° C. for 3 hours, and sealed.

【００７０】また、配線基板１の表面の接続パッド１７
には、Ｓｎ６３重量％−Ｐｂ３７重量％の半田からなる
ボール状の接続端子１１を半田によって取着した。The connection pads 17 on the surface of the wiring board 1
, A ball-shaped connection terminal 11 made of solder of 63% by weight of Sn and 37% by weight of Pb was attached by soldering.

【００７１】上記のようにして半導体素子１７を収納し
た配線基板１をガラスエポキシ基板（４０〜１２５℃で
の熱膨張係数１５ｐｐｍ／℃）からなり、表面に銅箔か
らなる導体層２４が形成された外部回路基板２３上に接
続端子１１が接続されるように位置合わせして低融点半
田を用いて窒素雰囲気中で２２０℃、３分間のリフロー
処理を行い半導体素子収納用配線基板を作製した。The wiring board 1 housing the semiconductor element 17 as described above is made of a glass epoxy board (thermal expansion coefficient at 40 to 125 ° C., 15 ppm / ° C.), and a conductor layer 24 made of copper foil is formed on the surface. The connection terminals 11 were positioned on the external circuit board 23 so as to be connected thereto, and reflow treatment was performed at 220 ° C. for 3 minutes in a nitrogen atmosphere using low melting point solder, thereby producing a wiring board for housing semiconductor elements.

【００７２】このようにして半導体素子収納用配線基板
を大気中にて−４０℃と１２５℃の各温度に制御した恒
温槽に試験サンプルを３０分／３０分の保持を１サイク
ルとして最高１０００サイクルまで繰り返した。In this manner, the test sample is held for 30 minutes / 30 minutes in a thermostatic chamber in which the wiring board for semiconductor element storage is controlled at -40 ° C. and 125 ° C. in the atmosphere in the atmosphere, and a maximum of 1000 cycles. Repeated until.

【００７３】そして、１００サイクル毎に配線基板１の
接続パッド９と外部回路基板２３の導体層２４との電気
抵抗の測定、および外観観察によるクラックの発生の確
認、超音波探傷装置によるダイ付剤１９等の剥離の確認
を行い変化が表われるまでのサイクル数をカウントし
た。その結果を表１に示す。Then, every 100 cycles, the electric resistance between the connection pad 9 of the wiring board 1 and the conductor layer 24 of the external circuit board 23 is measured, the occurrence of cracks is confirmed by observing the appearance, and the die attaching agent is inspected by an ultrasonic flaw detector. Confirmation of peeling such as 19 and counting the number of cycles until a change appeared. Table 1 shows the results.

【００７４】[0074]

【表１】 [Table 1]

【００７５】表１より明らかなように、放熱体１３がセ
ラミックス部材と金属部材との接合体により形成された
試料Ｎｏ．１〜１４では、温度サイクル試験回数が８０
０回以上と熱疲労寿命を長くできた。また、配線基板１
の絶縁材料をガラスセラミックスとし、放熱体１３を枠
体２５と嵌込体２７より構成した試料Ｎｏ．３、５、
６、１４では、温度サイクル試験回数を１０００回以上
まで伸ばすことができた。As is clear from Table 1, Sample No. 1 in which the heat radiator 13 was formed of a joined body of a ceramic member and a metal member. In 1 to 14, the number of times of the temperature cycle test is 80
The thermal fatigue life was prolonged as 0 or more times. Also, the wiring board 1
The insulating material of the sample No. was made of glass ceramics, and the radiator 13 was composed of a frame 25 and a fitting body 27. 3, 5,
In Nos. 6 and 14, the number of temperature cycle tests could be increased to 1000 times or more.

【００７６】また、放熱体１３を格子状あるいは円形状
とした試料Ｎｏ．９、１０においても１０００回以上と
することができた。これは放熱体１３をＣｕの金属部材
にＡｌ2Ｏ3のセラミックス部材を組み合わせた接合体と
し、放熱体１３の熱膨張係数を配線基板１の熱膨張係数
よりも小さくすることにより、温度サイクル試験におい
て、例えば、低温に冷却された場合に、配線基板１とと
もに、その上面に設けられた放熱体１３が配線基板１に
対して凹状に変形するとともに、外部回路基板７も配線
基板１に追従して凸状に変形しやすくなり、配線基板１
と外部回路基板２３との間の接続端子１１に作用する歪
みや応力を低減でき、半田ボール等で形成された接続端
子１１の疲労断線を抑えることができたためである。In the case of Sample No. in which the heat radiator 13 was formed in a lattice shape or a circular shape. In Examples 9 and 10, the number could be increased to 1000 times or more. This is because a heat radiator 13 is a joined body in which a Cu metal member and an Al 2 O 3 ceramic member are combined, and the thermal expansion coefficient of the heat radiator 13 is made smaller than the thermal expansion coefficient of the wiring board 1, so that a temperature cycle test is performed. For example, when cooled to a low temperature, the radiator 13 provided on the upper surface thereof together with the wiring board 1 is deformed concavely with respect to the wiring board 1, and the external circuit board 7 also follows the wiring board 1. The wiring board 1
This is because strain and stress acting on the connection terminal 11 between the connection terminal 11 and the external circuit board 23 can be reduced, and fatigue disconnection of the connection terminal 11 formed by a solder ball or the like can be suppressed.

【００７７】一方、放熱体１３を銅や銅―タングステン
焼結体の単体とした試料Ｎｏ．１５〜１７では、温度サ
イクル試験回数が５００回以下となり、特に、銅−タン
グステン焼結体を用いた試料Ｎｏ．１６では、実装工程
において配線基板１と外部回路基板２３とを接続する接
続端子１１に変形が認められた。On the other hand, in the case of Sample No. in which the heat radiator 13 was made of copper or a copper-tungsten sintered body alone. In Nos. 15 to 17, the number of times of the temperature cycle test was 500 times or less. In No. 16, the connection terminals 11 for connecting the wiring board 1 and the external circuit board 23 were deformed in the mounting process.

【００７８】[0078]

【発明の効果】以上詳述したように、本発明の半導体素
子収納用配線基板では、配線基板の上面に設けられた放
熱体が、金属部材とセラミックス部材との接合体からな
り、且つ前記放熱体全体の熱膨張係数をα１、絶縁基板
の熱膨張係数をα２とした時に、α１≦α２の関係を満
足することを特徴とするものである。このように、高熱
膨張性の金属部材に低熱膨張性のセラミックス部材を組
み合わせることにより、放熱体全体の熱膨張係数を低下
させることができ、放熱体と配線基板との熱膨張差を低
減し、発生する応力が小さくし、絶縁基板のクラックや
接続端子の破壊を抑制し、半導体素子収納用配線基板の
接続信頼性を高めることができる。As described above in detail, in the wiring board for housing a semiconductor element according to the present invention, the radiator provided on the upper surface of the wiring board comprises a joined body of a metal member and a ceramic member. When the thermal expansion coefficient of the whole body is α1, and the thermal expansion coefficient of the insulating substrate is α2, the relationship α1 ≦ α2 is satisfied. As described above, by combining the high thermal expansion metal member with the low thermal expansion ceramic member, the thermal expansion coefficient of the entire radiator can be reduced, and the difference in thermal expansion between the radiator and the wiring board can be reduced. The generated stress is reduced, cracks on the insulating substrate and breakage of the connection terminals are suppressed, and the connection reliability of the wiring board for housing semiconductor elements can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の半導体素子収納用配線基板を示す概略
断面図である。FIG. 1 is a schematic sectional view showing a wiring board for housing a semiconductor element of the present invention.

【図２】（ａ）は本発明の枠体と嵌込体を組み合わせた
接合体を示す概略断面図、（ｂ）は放熱体を構成する枠
体を示す斜視図、および（ｃ）嵌込体を示す斜視図であ
る。FIG. 2A is a schematic cross-sectional view showing a joined body in which a frame body and a fitting body of the present invention are combined, FIG. 2B is a perspective view showing a frame body constituting a radiator, and FIG. It is a perspective view showing a body.

【図３】（ａ）は本発明の枠体の厚みを嵌込体の厚みよ
りも薄くした放熱体を示す斜視図、（ｂ）は枠体に孔を
形成した放熱体を示す斜視図、および（ｃ）は枠体に溝
を形成した放熱体を示す斜視図である。3A is a perspective view showing a radiator in which the thickness of the frame body of the present invention is smaller than the thickness of the fitting body, FIG. 3B is a perspective view showing a radiator having holes formed in the frame body, And (c) is a perspective view showing a radiator having a groove formed in the frame.

【図４】（ａ）はセラミックス部材を格子状に形成した
放熱体を示す斜視図、（ｂ）はセラミックス部材を円形
状に形成した放熱体を示す斜視図である。FIG. 4A is a perspective view showing a heat radiator in which a ceramic member is formed in a lattice shape, and FIG. 4B is a perspective view showing a heat radiator in which a ceramic member is formed in a circular shape.

【図５】本発明の半導体素子収納用配線基板が反り変形
した状態を示す模式図である。FIG. 5 is a schematic view showing a state in which the wiring board for housing a semiconductor element of the present invention is warped.

【符号の説明】[Explanation of symbols]

１ 配線基板 ３ 開口部 ５ 絶縁基板 ７ 配線回路層 ９ 接続パッド １１ 接続端子 １３ 放熱体 １５ 接着剤 １７ 半導体素子 １９ ダイ付剤 ２１ ワイヤ ２２ 封止樹脂 ２３ 外部回路基板 ２４ 導体層 ２５ 枠体 ２７ 嵌込体 ２９ 貫通口 ３１ 貫通孔 ３３ 突起 ３５ 孔 ３７ 溝 ３９ 金属体 ４１ 格子体 ４３ 円形体 DESCRIPTION OF SYMBOLS 1 Wiring board 3 Opening 5 Insulating board 7 Wiring circuit layer 9 Connection pad 11 Connection terminal 13 Heat radiator 15 Adhesive 17 Semiconductor element 19 Die attachment 21 Wire 22 Sealing resin 23 External circuit board 24 Conductive layer 25 Frame 27 Fitting Insert 29 Through-hole 31 Through-hole 33 Projection 35 Hole 37 Groove 39 Metal body 41 Lattice body 43 Circular body

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/14 Ｍ 23/36 Ｍ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 23/14 M 23/36 M

Claims (8)

【特許請求の範囲】[Claims] 【請求項１】略中央部に開口部を有する絶縁基板の表面
および内部に配線回路層が形成された配線基板と、前記
開口部を閉じるように前記配線基板の一方主面に接合さ
れ、且つ前記開口部側に半導体素子が搭載される放熱体
と、前記配線基板の他方主面に設けられた接続端子とを
具備する半導体素子収納用配線基板であって、前記放熱
体が金属部材とセラミックス部材との接合体からなり、
且つ前記放熱体全体の熱膨張係数をα１、前記絶縁基板
の熱膨張係数をα２とした時に、α１≦α２の関係を満
足することを特徴とする半導体素子収納用配線基板。1. A wiring board having a wiring circuit layer formed on the surface and inside of an insulating substrate having an opening at a substantially central portion, and joined to one main surface of the wiring board so as to close the opening. A wiring board for housing a semiconductor element, comprising: a radiator on which a semiconductor element is mounted on the opening side; and connection terminals provided on the other main surface of the wiring board, wherein the radiator is made of a metal member and a ceramic. It consists of a joined body with the member,
Further, when the thermal expansion coefficient of the heat radiator is α1 and the thermal expansion coefficient of the insulating substrate is α2, the relationship α1 ≦ α2 is satisfied. 【請求項２】金属部材およびセラミックス部材の熱膨張
係数をそれぞれα３およびα４とした時に、α３＞α４
の関係を満足することを特徴とする請求項１記載の半導
体素子収納用配線基板。2. When the thermal expansion coefficients of a metal member and a ceramic member are α3 and α4, respectively, α3> α4
2. The wiring board for housing a semiconductor element according to claim 1, wherein the following relationship is satisfied. 【請求項３】放熱体が、セラミックス部材からなる枠体
と、該枠体の内側に形成された金属部材からなる嵌込体
との接合体であることを特徴とする請求項１または２に
記載の半導体素子収納用配線基板。3. The radiator according to claim 1, wherein the radiator is a joined body of a frame made of a ceramic member and a fitting body made of a metal member formed inside the frame. The wiring board for storing a semiconductor element according to the above. 【請求項４】金属部材がＣuあるいはＡｌ、セラミック
ス部材がＡｌ2Ｏ3、Ｓｉ3Ｎ4、およびＡｌＮから選ばれ
る少なくとも１種であり、金属部材の熱による膨張収縮
をセラミックス部材により抑制されることを特徴とする
請求項１乃至３のうちいずれかに記載の半導体素子収納
用配線基板。4. The metal member is Cu or Al, and the ceramic member is at least one selected from Al 2 O 3 , Si 3 N 4 and AlN, and expansion and contraction of the metal member due to heat are suppressed by the ceramic member. 4. The wiring board for accommodating a semiconductor element according to claim 1, wherein: 【請求項５】放熱体の厚みが２ｍｍ以下であることを特
徴とする請求項１乃至４のうちいずれかに記載の半導体
素子収納用配線基板。5. The wiring board for accommodating a semiconductor element according to claim 1, wherein a thickness of the heat radiator is 2 mm or less. 【請求項６】放熱体の比重が８以下であることを特徴と
する請求項１乃至５のうちいずれかに記載の半導体素子
収納用配線基板。6. The wiring board for housing a semiconductor element according to claim 1, wherein the specific gravity of the heat radiator is 8 or less. 【請求項７】配線基板の一辺の寸法が３０ｍｍ以上であ
ることを特徴とする請求項１乃至６のうちいずれかに記
載の半導体素子収納用配線基板。7. The wiring board according to claim 1, wherein one side of the wiring board has a dimension of 30 mm or more. 【請求項８】接続端子が半田ボールからなることを特徴
とする請求項１乃至７のうちいずれかに記載の半導体素
子収納用配線基板。8. The wiring board for housing a semiconductor element according to claim 1, wherein the connection terminals are made of solder balls.
JP2001022425A 2001-01-30 2001-01-30 Semiconductor device storing wiring board Pending JP2002231850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001022425A JP2002231850A (en) 2001-01-30 2001-01-30 Semiconductor device storing wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001022425A JP2002231850A (en) 2001-01-30 2001-01-30 Semiconductor device storing wiring board

Publications (1)

Publication Number Publication Date
JP2002231850A true JP2002231850A (en) 2002-08-16

Family

ID=18887841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001022425A Pending JP2002231850A (en) 2001-01-30 2001-01-30 Semiconductor device storing wiring board

Country Status (1)

Country Link
JP (1) JP2002231850A (en)

Cited By (9)

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JP2005050881A (en) * 2003-07-29 2005-02-24 Kyocera Corp Laminated wiring board, its manufacturing method, electric apparatus, and its mounting structure
JP2007149814A (en) * 2005-11-25 2007-06-14 Matsushita Electric Works Ltd Circuit board and method of manufacturing same
JP2011077389A (en) * 2009-09-30 2011-04-14 Dowa Metaltech Kk Metal-ceramic bonded substrate and method of manufacturing the same
JP2011135110A (en) * 2011-04-05 2011-07-07 Nissan Motor Co Ltd Joint structure
JPWO2011074221A1 (en) * 2009-12-14 2013-04-25 パナソニック株式会社 Semiconductor device
JP2013251472A (en) * 2012-06-04 2013-12-12 Toyota Central R&D Labs Inc Heat transfer member and module comprising the same
KR20200137867A (en) * 2019-05-31 2020-12-09 주식회사 코스텍시스 Semiconductor device package with improved heat characteristic and method for forming the same
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005050881A (en) * 2003-07-29 2005-02-24 Kyocera Corp Laminated wiring board, its manufacturing method, electric apparatus, and its mounting structure
JP2007149814A (en) * 2005-11-25 2007-06-14 Matsushita Electric Works Ltd Circuit board and method of manufacturing same
JP2011077389A (en) * 2009-09-30 2011-04-14 Dowa Metaltech Kk Metal-ceramic bonded substrate and method of manufacturing the same
JPWO2011074221A1 (en) * 2009-12-14 2013-04-25 パナソニック株式会社 Semiconductor device
JP2011135110A (en) * 2011-04-05 2011-07-07 Nissan Motor Co Ltd Joint structure
US8933484B2 (en) 2012-06-04 2015-01-13 Toyota Jidosha Kabushiki Kaisha Heat transfer member and module with the same
JP2013251472A (en) * 2012-06-04 2013-12-12 Toyota Central R&D Labs Inc Heat transfer member and module comprising the same
KR20200137867A (en) * 2019-05-31 2020-12-09 주식회사 코스텍시스 Semiconductor device package with improved heat characteristic and method for forming the same
KR102197642B1 (en) * 2019-05-31 2020-12-31 주식회사 코스텍시스 Semiconductor device package with improved heat characteristic and method for forming the same
KR20210155196A (en) * 2020-06-15 2021-12-22 에스티씨 주식회사 Cooling module with improved insulation efficiency
KR102428948B1 (en) * 2020-06-15 2022-08-04 에스티씨 주식회사 Cooling module with improved insulation efficiency
CN115802596A (en) * 2023-02-13 2023-03-14 四川斯艾普电子科技有限公司 Thick-film ceramic circuit board and manufacturing method thereof
CN115802596B (en) * 2023-02-13 2023-05-05 四川斯艾普电子科技有限公司 Thick film ceramic circuit board and manufacturing method thereof

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