JP2001048512A - Preparation of perpendicularly oriented carbon nanotube - Google Patents
Preparation of perpendicularly oriented carbon nanotubeInfo
- Publication number
- JP2001048512A JP2001048512A JP11221708A JP22170899A JP2001048512A JP 2001048512 A JP2001048512 A JP 2001048512A JP 11221708 A JP11221708 A JP 11221708A JP 22170899 A JP22170899 A JP 22170899A JP 2001048512 A JP2001048512 A JP 2001048512A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- carbon nanotubes
- carbon
- producing
- gas
- Prior art date
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- Pending
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、カーボンナノチュ
ーブの作製方法に関するものである。特に、基板に対し
て垂直に配向したカーボンナノチューブの作製方法及び
基板上の任意の位置のみに、基板に対して垂直に配向し
たカーボンナノチューブを選択的に作製する方法に関す
るものである。[0001] The present invention relates to a method for producing carbon nanotubes. In particular, the present invention relates to a method for producing carbon nanotubes oriented perpendicular to the substrate and a method for selectively producing carbon nanotubes oriented perpendicular to the substrate only at an arbitrary position on the substrate.
【０００２】[0002]
【従来の技術】１９９１年にカーボンナノチューブが発
見されて以来、このカーボンナノチューブはアーク放電
法やレーザー蒸発法により作製されてきた。アーク放電
法は、炭素の蒸発にアーク放電を利用するもので、２本
のグラファイト電極を軽く接触させたり、１〜２ｍｍ程
度離した状態でアークを飛ばすことで煤を作製する方法
である。また、レーザー蒸発法は、電気炉の中に挿入し
た石英管の中央にグラファイトのターゲットを置き、１
２００℃に加熱したアルゴンガスを石英管に流し、ガス
の流れの上流部からグラファイトにＹＡＧレーザーを照
射して、グラファイトを蒸発させ、電気炉の出口付近の
石英管に煤を付着せしめる方法である。アーク放電法も
レーザー蒸発法も、作製した煤を精製することによって
カーボンナノチューブを得ている。2. Description of the Related Art Since carbon nanotubes were discovered in 1991, the carbon nanotubes have been produced by an arc discharge method or a laser evaporation method. The arc discharge method uses an arc discharge for evaporating carbon, and is a method of producing soot by making two graphite electrodes lightly contact with each other or by blowing an arc at a distance of about 1 to 2 mm. In the laser evaporation method, a graphite target is placed at the center of a quartz tube inserted in an electric furnace, and
A method in which argon gas heated to 200 ° C. is passed through a quartz tube, and YAG laser is applied to graphite from the upstream of the gas flow to evaporate the graphite and cause soot to adhere to the quartz tube near the outlet of the electric furnace. . In both the arc discharge method and the laser evaporation method, carbon nanotubes are obtained by purifying the produced soot.
【０００３】[0003]
【発明が解決しようとする課題】アーク放電法もレーザ
ー蒸発法も、作製した煤を精製しなくては目的とするカ
ーボンナノチューブを得ることができないという問題が
ある。しかも、精製したとしても、精製したカーボンナ
ノチューブは、長さ、太さがばらばらで、孤を描いてい
るものが大半であった。さらに、精製することにより、
重量が精製前の数％まで減少してしまい、歩留りが悪い
という問題もあった。Both the arc discharge method and the laser evaporation method have a problem in that the desired carbon nanotubes cannot be obtained without purifying the produced soot. Moreover, even if it was purified, most of the purified carbon nanotubes were different in length and thickness, and drawn arcs. Furthermore, by purification,
There was also a problem that the weight was reduced to several percent before purification, and the yield was poor.
【０００４】本発明は、この様な従来のカーボンナノチ
ューブ作製法の問題点を解決するためになされたもので
あり、基板上に所望のカーボンナノチューブを直接作製
することで、精製を行う手間を省くことを可能にし、ま
た、カーボンナノチューブの適切な成長条件を選ぶこと
で、得られるカーボンナノチューブの直径、及び長さの
平均値を制御することを可能にし、さらに、カーボンナ
ノチューブを、基板に対して垂直に配向して作製するこ
とや、基板上の任意の部位にのみ選択的に作製すること
を可能にする方法を提供することを課題とする。The present invention has been made to solve such problems of the conventional method for producing carbon nanotubes, and eliminates the need for purification by directly producing desired carbon nanotubes on a substrate. It is also possible to control the average value of the diameter and length of the obtained carbon nanotube by selecting appropriate growth conditions of the carbon nanotube, It is an object of the present invention to provide a method which can be manufactured by being vertically oriented or selectively manufactured only at an arbitrary site on a substrate.
【０００５】[0005]
【課題を解決するための手段】本発明のカーボンナノチ
ューブの作製方法は、プラズマＣＶＤ法により、基板表
面に、カーボンナノチューブを基板表面に対して垂直方
向に配向させて作製することからなる。The method for producing carbon nanotubes of the present invention comprises producing carbon nanotubes on a substrate surface in a direction perpendicular to the substrate surface by a plasma CVD method.
【０００６】本発明のカーボンナノチューブの作製方法
はまた、プラズマＣＶＤ法により、例えば、Ｎｉ、Ｆ
ｅ、Ｃｏ又はこれらの金属の少なくとも２種類からなる
合金の基板上で、あるいはガラスやＳｉウェハー等のカ
ーボンナノチューブを作製できない基板上の任意の部位
に前記金属からなる種々の任意のパターンを形成した基
板上で、メタン、エタン、エチレン、アセチレン又はそ
の混合物等のような炭化水素系ガスである炭素供給ガス
と水素ガスとを導入ガスとして用い、例えば、基板温度
５００℃以上、成長圧力１００Ｐａ以上、基板への印加
電圧１００Ｖ以上の条件下で、所定の時間カーボンナノ
チューブを成長させることにより、基板全表面にあるい
は該パターンの部分の表面のみに所望のカーボンナノチ
ューブを作製することからなる。基板温度５００℃未満
では、カーボンナノチューブの成長が得られず、成長圧
力１００Ｐａ未満では、カーボンナノチューブの実用的
な成長速度が得られず、基板への印加電圧１００Ｖ未満
では、良質のカーボンナノチューブの成長が得られな
い。[0006] The method for producing carbon nanotubes of the present invention is also characterized in that, for example, Ni, F
Various arbitrary patterns made of the metal were formed on a substrate of e, Co, or an alloy composed of at least two of these metals, or on an arbitrary site on a substrate where a carbon nanotube such as a glass or a Si wafer could not be produced. On the substrate, methane, ethane, ethylene, a carbon-based gas such as a hydrocarbon-based gas such as acetylene or a mixture thereof and a hydrogen gas are used as introduction gases, for example, a substrate temperature of 500 ° C. or more, a growth pressure of 100 Pa or more, By growing the carbon nanotubes for a predetermined time under the condition of a voltage applied to the substrate of 100 V or more, the desired carbon nanotubes are formed on the entire surface of the substrate or only on the surface of the pattern portion. If the substrate temperature is lower than 500 ° C., the growth of carbon nanotubes cannot be obtained. If the growth pressure is lower than 100 Pa, a practical growth rate of carbon nanotubes cannot be obtained. Can not be obtained.
【０００７】前記炭素供給ガスの割合は、全導入ガス基
準で１０vol.％〜５０vol.％であることが望ましい。１
０vol.％未満だと水素ガスのエッチング効果が強すぎ、
また５０vol.％を超えると炭素供給ガス濃度が濃すぎ
て、マイクロ波導入部の石英の消耗が激しいという問題
がある。前記プラズマＣＶＤ法を行う前の予備処理とし
て、ＣＶＤ装置内に水素ガスのみを導入し、カーボンナ
ノチューブの作製可能な基板の表面を水素エッチング処
理して、基板表面をクリーニングしかつ活性化すること
が、効率良くナノチューブを成長させるためには好まし
い。このクリーニングは、水素プラズマを発生させると
低温で処理可能となるが、高温度で水素ガス処理しても
よい。It is desirable that the ratio of the carbon supply gas is 10 vol.% To 50 vol.% Based on the total introduced gas. 1
If less than 0 vol.%, The etching effect of hydrogen gas is too strong,
On the other hand, if it exceeds 50 vol.%, The concentration of the carbon supply gas is too high, and there is a problem that the consumption of quartz in the microwave introduction part is severe. As a preliminary process before performing the plasma CVD method, only a hydrogen gas is introduced into a CVD apparatus, and the surface of the substrate on which carbon nanotubes can be formed is subjected to a hydrogen etching process to clean and activate the substrate surface. This is preferable for efficiently growing nanotubes. This cleaning can be performed at a low temperature by generating hydrogen plasma, but may be performed at a high temperature with hydrogen gas.
【０００８】基板上への任意パターンの形成方法は特に
制限されないが、例えば、スパッタ、メッキ、有機金属
化合物の塗布後焼成等の方法で行うことが好ましい。ま
た、このパターンの形状は特に制限されるわけではな
く、直線でも曲線でも、あるいは点線でも、その他の任
意の形状のものでよい。また、本発明で用いるプラズマ
ＣＶＤ法は、好ましくは電界印加型プラズマＣＶＤ法で
ある。カーボンナノチューブ作製可能な基板としては、
鉄、ニッケル、コバルトなどの鉄系金属を含むものであ
れば使用可能であるが、例えば、ＳＵＳ３０４、ＳＵＳ
３０２、ＳＵＳ３１６などのステンレス鋼、ＮｉとＦｅ
を含む合金であるアンバー、パーマロイ、インコネル
（Henry Wiggins 社の登録商標；インコネル−６００基
板はニラコ社製の商品名）、インバー（インバー−４２
基板はニラコ社製の商品名）、コバール（ウェスチング
・ハウス社開発；コバール基板はニラコ社製の商品名）
などからなる基板を使用することが好ましい、これらは
非常に安価である。The method of forming an arbitrary pattern on the substrate is not particularly limited, but is preferably performed by, for example, a method such as sputtering, plating, or coating and baking after applying an organometallic compound. The shape of the pattern is not particularly limited, and may be a straight line, a curve, a dotted line, or any other shape. Further, the plasma CVD method used in the present invention is preferably an electric field application type plasma CVD method. As a substrate on which carbon nanotubes can be produced,
Any material containing an iron-based metal such as iron, nickel, and cobalt can be used. For example, SUS304, SUS
302, stainless steel such as SUS316, Ni and Fe
, Permalloy, Inconel (registered trademark of Henry Wiggins, Inc .; Inconel-600 substrate is a trade name of Nilaco Inc.), Invar (Invar-42
Substrate is Nilaco product name), Kovar (developed by Westinghouse; Kovar substrate is Nilaco product name)
It is preferable to use substrates made of such as these, which are very inexpensive.
【０００９】上記したように、本発明では、カーボンナ
ノチューブを基板上に直接作製することで、精製を行う
手間を省くことが可能になる。さらに、カーボンナノチ
ューブを基板上に基板に対して垂直に配向して作製する
ことが可能であり、また、カーボンナノチューブを基板
上の任意の位置のみに選択的に作製することが可能であ
るため、カーボンナノチューブを電子材料、ナノテクノ
ロジー、電子放出源などの分野で応用する際に、利用し
易いという利点がある。As described above, according to the present invention, the production of carbon nanotubes directly on a substrate makes it possible to save the labor for purification. Furthermore, since it is possible to produce carbon nanotubes on a substrate in a direction perpendicular to the substrate, and it is possible to selectively produce carbon nanotubes only at arbitrary positions on the substrate, When carbon nanotubes are applied in fields such as electronic materials, nanotechnology, and electron emission sources, they have the advantage of being easy to use.
【００１０】また、得られるカーボンナノチューブ長さ
は、基板の種類と成長反応時間を任意に選ぶことによっ
て制御することができ、また、カーボンナノチューブの
径は、ガラスやＳｉウェハー上に成長させる場合には、
その厚みで制御することができる。The length of the obtained carbon nanotube can be controlled by arbitrarily selecting the type of substrate and the growth reaction time, and the diameter of the carbon nanotube can be controlled when growing on a glass or Si wafer. Is
It can be controlled by its thickness.
【００１１】[0011]
【実施例】次に、実施例により本発明を詳細に説明する
が、本発明はこれらの例によってなんら限定されるもの
ではない。Next, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples.
【００１２】以下の実施例でカーボンナノチューブの作
製に用いた電界印加型プラズマＣＶＤ装置の概略を図１
に示す。真空室１内には陰極２及びこれと対抗してカソ
ード電極３が配置され、陰極２上には基板４が載置され
る。真空室１には反応ガス源（炭素供給ガス、水素ガ
ス）５、排気用真空ポンプ６、マイクロ波プラズマ発生
装置７を接続し、また、電極３にＤＣ電源８を接続する
ように構成されている。かかる構成をとることにより電
界印加型プラズマＣＶＤ法により基板の表面にカーボン
ナノチューブを堆積せしめることができる。このＣＶＤ
装置としては、例えば S.Yugo et al. Appl. Phys. Let
t.,58(1991)1038に記載されている。 実施例１ インコネル−６００基板（ニラコ社製、商品名；縦１０
ｍｍ×横１０ｍｍ×厚み０．５ｍｍ）を、図１に示すプ
ラズマＣＶＤ装置の陰極２上に載置し、装置内を１Ｐａ
にして、３０分間放置した。その後、該ＣＶＤ装置内に
水素ガスのみを導入し、マイクロ波投入電力５００Ｗ、
基板温度７５０℃、基板印加電圧１５０Ｖ、圧力１００
０Ｐａの条件で、１５分間水素エッチング処理を行い、
基板表面のクリーニングと活性化を行った。次いで、炭
素供給ガスとしてのメタンと水素ガスとを導入し、マイ
クロ波投入電力５００Ｗ、基板温度７５０℃、基板印加
電圧２５０Ｖ、成長圧力４０００Ｐａの条件で、３０分
間反応を行い、基板上にカーボンナノチューブを成長せ
しめた。その際の導入メタンの割合は、全導入ガス基準
で２０vol.％であった。得られたカーボンナノチューブ
の形成状態を示す走査型電子顕微鏡像の写真（ＳＥＭ写
真）である図２(Ａ)（１０°傾斜）及び図２(Ｂ)（側面
からみた写真）から明らかなように、カーボンナノチュ
ーブは全て基板に対して垂直に成長していることが確認
された。作製されたカーボンナノチューブは、直径約１
００ｎｍ、長さ１５μｍの多層ナノチューブであった。 実施例２ ＳＵＳ３０４基板（縦１０ｍｍ×横１０ｍｍ×厚み０．
５ｍｍ）を、図１に示すプラズマＣＶＤ装置の陰極２上
に載置し、装置内を１Ｐａにして、３０分間放置した。
その後、該ＣＶＤ装置内に水素ガスのみを導入し、マイ
クロ波投入電力５００Ｗ、基板温度７５０℃、基板印加
電圧１５０Ｖ、成長圧力１０００Ｐａの条件で、１５分
間水素エッチング処理を行い、基板表面のクリーニング
と活性化を行った。次いで、炭素供給ガスとしてのアセ
チレンと水素ガスとを導入し、マイクロ波投入電力５０
０Ｗ、基板温度７５０℃、基板印加電圧２５０Ｖ、成長
圧力３０００Ｐａの条件で、３０分間反応を行い、基板
上にカーボンナノチューブを成長せしめた。その際の導
入アセチレンの割合は、全導入ガス基準で３０vol.％で
あった。得られたカーボンナノチューブの場合も、図２
に示すＳＥＭ写真の場合と同様にナノチューブが基板に
対して垂直に成長していることが確認された。作製され
たカーボンナノチューブは、直径約１００ｎｍ、長さ１
５μｍの多層ナノチューブであった。FIG. 1 schematically shows an electric field application type plasma CVD apparatus used for producing carbon nanotubes in the following examples.
Shown in A cathode 2 and a cathode electrode 3 opposed thereto are arranged in a vacuum chamber 1, and a substrate 4 is mounted on the cathode 2. The vacuum chamber 1 is connected to a reaction gas source (carbon supply gas, hydrogen gas) 5, an evacuation vacuum pump 6, a microwave plasma generator 7, and a DC power supply 8 connected to the electrode 3. I have. With this configuration, carbon nanotubes can be deposited on the surface of the substrate by an electric field application type plasma CVD method. This CVD
As an apparatus, for example, S. Yugo et al. Appl. Phys. Let
t., 58 (1991) 1038. Example 1 Inconel-600 substrate (manufactured by Nilaco, trade name;
mm × width 10 mm × thickness 0.5 mm) was placed on the cathode 2 of the plasma CVD apparatus shown in FIG.
And left for 30 minutes. Thereafter, only hydrogen gas was introduced into the CVD apparatus, and the microwave input power was 500 W,
Substrate temperature 750 ° C, substrate applied voltage 150V, pressure 100
Under a condition of 0 Pa, a hydrogen etching process is performed for 15 minutes,
The substrate surface was cleaned and activated. Then, methane and hydrogen gas as a carbon supply gas were introduced, and a reaction was performed for 30 minutes under the conditions of a microwave input power of 500 W, a substrate temperature of 750 ° C., a substrate applied voltage of 250 V, and a growth pressure of 4000 Pa. Grew. The ratio of the introduced methane at that time was 20 vol.% Based on the total introduced gas. As is clear from FIGS. 2A (10 ° inclination) and FIG. 2B (side view), which are photographs (SEM photographs) of scanning electron microscope images showing the state of formation of the obtained carbon nanotubes. It was confirmed that all the carbon nanotubes were grown perpendicular to the substrate. The produced carbon nanotube has a diameter of about 1
It was a multi-walled nanotube having a thickness of 00 nm and a length of 15 μm. Example 2 SUS304 substrate (length 10 mm × width 10 mm × thickness 0.
5 mm) was placed on the cathode 2 of the plasma CVD apparatus shown in FIG. 1, the inside of the apparatus was set to 1 Pa, and left for 30 minutes.
Thereafter, only hydrogen gas was introduced into the CVD apparatus, and a hydrogen etching treatment was performed for 15 minutes under the conditions of a microwave input power of 500 W, a substrate temperature of 750 ° C., a substrate applied voltage of 150 V, and a growth pressure of 1000 Pa, to clean the substrate surface. Activation was performed. Next, acetylene and hydrogen gas as carbon supply gas were introduced, and microwave
The reaction was carried out for 30 minutes under the conditions of 0 W, the substrate temperature of 750 ° C., the voltage applied to the substrate of 250 V, and the growth pressure of 3000 Pa, to grow carbon nanotubes on the substrate. At that time, the ratio of the introduced acetylene was 30 vol.% Based on the total introduced gas. In the case of the obtained carbon nanotube, FIG.
It was confirmed that the nanotubes were grown perpendicular to the substrate as in the case of the SEM photograph shown in FIG. The produced carbon nanotube has a diameter of about 100 nm and a length of 1
It was a 5 μm multi-walled nanotube.
【００１３】本実施例において、炭素供給ガスとして、
アセチレンとメタンとの混合ガスを用いた場合も、上記
と同様な結果が得られる。 実施例３ ガラス基板（縦１０ｍｍ×横１０ｍｍ×厚み０．５ｍ
ｍ）上の任意の位置に、Ｎｉからなるクロスライン（幅
３０μｍ×長さ１．０ｍｍ）をスパッタ法により形成せ
しめた基板を用意した。このＮｉクロスライン付ガラス
基板を、実施例１と同じプラズマＣＶＤ装置の陰極２上
に載置し、装置内を１Ｐａにして、３０分間放置した。
その後、炭素供給ガスとしてのメタンと水素ガスとを導
入し、マイクロ波投入電力５００Ｗ、基板温度７５０
℃、基板印加電圧２５０Ｖ、成長圧力３０００Ｐａの条
件で、３０分間反応を行い、基板上にカーボンナノチュ
ーブを成長せしめた。その際の導入メタンの割合は、全
導入ガス基準で３０vol.％であった。得られたカーボン
ナノチューブの形成状態を示すＳＥＭ写真（図３）から
明らかなように、カーボンナノチューブは、Ｎｉクロス
ライン部の上だけに選択的に、基板に対して垂直に配向
して成長しており、該クロスライン部以外の部分の上に
は作製されていないことが確認された。作製されたカー
ボンナノチューブは、直径約１００ｎｍ、長さ１５μｍ
の多層ナノチューブであった。In this embodiment, as the carbon supply gas,
When a mixed gas of acetylene and methane is used, the same result as described above is obtained. Example 3 Glass substrate (length 10 mm × width 10 mm × thickness 0.5 m)
m) A substrate in which a cross line (width: 30 μm × length: 1.0 mm) made of Ni was formed at an arbitrary position on the substrate by a sputtering method. The glass substrate with the Ni cross line was placed on the cathode 2 of the same plasma CVD apparatus as in Example 1, the inside of the apparatus was set to 1 Pa, and left for 30 minutes.
Thereafter, methane as a carbon supply gas and hydrogen gas were introduced, and a microwave input power of 500 W and a substrate temperature of 750 were used.
The reaction was carried out for 30 minutes at a temperature of 250 ° C., a voltage applied to the substrate of 250 V, and a growth pressure of 3000 Pa, and carbon nanotubes were grown on the substrate. The ratio of the introduced methane at that time was 30 vol.% Based on the total introduced gas. As is clear from the SEM photograph (FIG. 3) showing the state of formation of the obtained carbon nanotubes, the carbon nanotubes were selectively grown only on the Ni cross-line portion and grown perpendicularly to the substrate. Thus, it was confirmed that no portion was formed on portions other than the cross line portion. The prepared carbon nanotube has a diameter of about 100 nm and a length of 15 μm.
Was a multi-walled nanotube.
【００１４】[0014]
【発明の効果】本発明によれば、基板上に基板に対して
垂直に配向したカーボンナノチューブを直接作製するこ
とができ、また、かかるカーボンナノチューブを基板の
任意の部位のみに選択的に作製することもできるので、
このカーボンナノチューブを電子材料、ナノテクノロジ
ー、電子放出源などの分野で応用する際に、高性能化す
ることが容易になる。According to the present invention, carbon nanotubes oriented perpendicular to the substrate can be directly produced on the substrate, and such carbon nanotubes can be selectively produced only at an arbitrary portion of the substrate. So you can
When this carbon nanotube is applied to fields such as electronic materials, nanotechnology, and electron emission sources, it becomes easy to improve the performance.
【図１】実施例１〜３で使用する電界印加型プラズマＣ
ＶＤ装置の概略を示す側面図。FIG. 1 shows an electric field applied plasma C used in Examples 1 to 3.
The side view which shows the outline of a VD apparatus.
【図２】（Ａ）実施例１で得られたカーボンナノチュー
ブの形成状態を上方からみたＳＥＭ写真（１０°傾
斜）。（Ｂ）図１のカーボンナノチューブの形成状態を
側面から見たＳＭ写真。FIG. 2A is an SEM photograph (10 ° tilt) of the state of formation of the carbon nanotubes obtained in Example 1 as viewed from above. (B) An SM photograph of the formation state of the carbon nanotube of FIG. 1 viewed from the side.
【図３】実施例３で得られたＮｉクロスライン付ガラス
基板上に作製したカーボンナノチューブの形成状態を上
方からみたＳＥＭ写真。FIG. 3 is an SEM photograph of the formation state of carbon nanotubes formed on the glass substrate with Ni cross lines obtained in Example 3 as viewed from above.
１ 真空室 ２ 陰極 ３ カソード電極 ４ 基板 ５ 反応ガス源 ６ 排気用真空
ポンプ ７ マイクロ波プラズマ発生装置 ８ ＤＣ電源DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Cathode 3 Cathode electrode 4 Substrate 5 Reaction gas source 6 Vacuum pump for exhaustion 7 Microwave plasma generator 8 DC power supply
フロントページの続き (72)発明者 村上 裕彦 茨城県つくば市東光台５−９−７ 日本真 空技術株式会社筑波超材料研究所内 (72)発明者 山川 洋幸 茨城県つくば市東光台５−９−７ 日本真 空技術株式会社筑波超材料研究所内 Ｆターム(参考） 4G046 CA01 CB00 CB03 CC06 4K030 AA09 AA10 BA27 BB01 CA02 DA04 FA01 LA11 Continuing from the front page (72) Inventor Hirohiko Murakami 5-9-7 Tokodai, Tsukuba-shi, Ibaraki Pref. Japan Vacuum Engineering Co., Ltd. (72) Inventor Hiroyuki Yamakawa 5-9- Tokodai, Tsukuba-shi, Ibaraki 7 Japan Vacuum Technology Co., Ltd. Tsukuba Super Materials Research Laboratory F-term (reference) 4G046 CA01 CB00 CB03 CC06 4K030 AA09 AA10 BA27 BB01 CA02 DA04 FA01 LA11
Claims (7)
カーボンナノチューブを基板表面に対して垂直方向に配
向させて作製することを特徴とするカーボンナノチュー
ブの作製方法。1. The method according to claim 1, wherein the surface of the substrate is formed by a plasma CVD method.
A method for producing carbon nanotubes, comprising: orienting carbon nanotubes in a direction perpendicular to a substrate surface.
らの金属の少なくとも２種類からなる合金の基板である
ことを特徴とする請求項１記載のカーボンナノチューブ
の作製方法。2. The method according to claim 1, wherein the substrate is a substrate of Ni, Fe, Co, or an alloy composed of at least two of these metals.
スが、炭素供給ガスと水素ガスとからなることを特徴と
する請求項１又は請求項２記載のカーボンナノチューブ
の作製方法。3. The method for producing carbon nanotubes according to claim 1, wherein the gas introduced during the plasma CVD method comprises a carbon supply gas and a hydrogen gas.
炭素供給ガスの割合が、全導入ガス基準で１０vol.％〜
５０vol.％であることを特徴とする請求項３記載のカー
ボンナノチューブの作製方法。4. A ratio of a carbon supply gas at the time of producing the carbon nanotube is 10 vol.
The method for producing carbon nanotubes according to claim 3, wherein the volume is 50 vol.%.
アセチレン又はその混合物であることを特徴とする請求
項３又は請求項４記載のカーボンナノチューブの作製方
法。5. The method of claim 1, wherein the carbon feed gas is methane, ethylene,
The method for producing carbon nanotubes according to claim 3, wherein the method is acetylene or a mixture thereof.
理として、ＣＶＤ装置内に水素ガスのみを導入し、基板
表面を水素エッチング処理して、基板表面をクリーニン
グしかつ活性化し、その後前記プラズマＣＶＤ法を行う
ことを特徴とする請求項１〜請求項５のいずれかに記載
のカーボンナノチューブの作製方法。6. As a preliminary process before performing the plasma CVD method, only a hydrogen gas is introduced into a CVD apparatus, a substrate surface is subjected to a hydrogen etching process, and the substrate surface is cleaned and activated. The method for producing a carbon nanotube according to any one of claims 1 to 5, wherein the method is performed.
を作製できないガラス又はＳｉウェハーの上にＮｉ、Ｆ
ｅ、Ｃｏ又はこれらの金属の少なくとも２種類からなる
合金で任意のパターンを形成したものを用い、前記プラ
ズマＣＶＤ法により、この任意のパターン形成基板表面
上の該任意のパターンの部分のみに、カーボンナノチュ
ーブを基板表面に対して垂直方向に配向させて選択的に
作製することを特徴とする請求項１、又は請求項３〜請
求項５のいずれかに記載のカーボンナノチューブの作製
方法。7. Ni or F is formed on a glass or Si wafer on which carbon nanotubes cannot be formed as the substrate.
e, Co or an alloy having at least two types of these metals and having an arbitrary pattern formed thereon. By the plasma CVD method, only a portion of the arbitrary pattern on the surface of the arbitrary pattern forming substrate is carbon. The method for producing a carbon nanotube according to claim 1, wherein the nanotube is selectively produced by orienting the nanotube in a direction perpendicular to a substrate surface.
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|---|---|---|---|
| JP11221708A JP2001048512A (en) | 1999-08-04 | 1999-08-04 | Preparation of perpendicularly oriented carbon nanotube |
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