IT1232973B - Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos - Google Patents

Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos

Info

Publication number
IT1232973B
IT1232973B IT8722827A IT2282787A IT1232973B IT 1232973 B IT1232973 B IT 1232973B IT 8722827 A IT8722827 A IT 8722827A IT 2282787 A IT2282787 A IT 2282787A IT 1232973 B IT1232973 B IT 1232973B
Authority
IT
Italy
Prior art keywords
switching device
voltage power
power switching
volatile memories
mos technology
Prior art date
Application number
IT8722827A
Other languages
English (en)
Other versions
IT8722827A0 (it
Inventor
Maurizio Secol
Maurizio Gaibotti
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8722827A priority Critical patent/IT1232973B/it
Publication of IT8722827A0 publication Critical patent/IT8722827A0/it
Priority to DE3889211T priority patent/DE3889211T2/de
Priority to EP88202574A priority patent/EP0322002B1/en
Priority to US07/274,886 priority patent/US5003511A/en
Priority to JP30112688A priority patent/JPH0731917B2/ja
Application granted granted Critical
Publication of IT1232973B publication Critical patent/IT1232973B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/066—Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
IT8722827A 1987-12-01 1987-12-01 Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos IT1232973B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8722827A IT1232973B (it) 1987-12-01 1987-12-01 Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos
DE3889211T DE3889211T2 (de) 1987-12-01 1988-11-17 Speisespannungsschalteranordnung für nichtflüchtige Speicher in MOS-Technologie.
EP88202574A EP0322002B1 (en) 1987-12-01 1988-11-17 Voltage supply switching device for nonvolatile memories in MOS technology
US07/274,886 US5003511A (en) 1987-12-01 1988-11-22 Voltage supply switching device for nonvolatile memories in MOS technology
JP30112688A JPH0731917B2 (ja) 1987-12-01 1988-11-30 不揮発性メモリー用電圧供給スイッチングデバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8722827A IT1232973B (it) 1987-12-01 1987-12-01 Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos

Publications (2)

Publication Number Publication Date
IT8722827A0 IT8722827A0 (it) 1987-12-01
IT1232973B true IT1232973B (it) 1992-03-11

Family

ID=11200902

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8722827A IT1232973B (it) 1987-12-01 1987-12-01 Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos

Country Status (5)

Country Link
US (1) US5003511A (it)
EP (1) EP0322002B1 (it)
JP (1) JPH0731917B2 (it)
DE (1) DE3889211T2 (it)
IT (1) IT1232973B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5157280A (en) * 1991-02-13 1992-10-20 Texas Instruments Incorporated Switch for selectively coupling a power supply to a power bus
EP0505653A1 (en) * 1991-03-29 1992-09-30 International Business Machines Corporation Combined sense amplifier and latching circuit for high speed ROMs
US5146110A (en) * 1991-05-22 1992-09-08 Samsung Electronics Co., Ltd. Semiconductor memory with substrate voltage generating circuit for removing unwanted substrate current during precharge cycle memory mode of operation
JP2672740B2 (ja) * 1991-10-07 1997-11-05 三菱電機株式会社 マイクロコンピュータ
GB9423051D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage level converter
EP0782268B1 (en) * 1995-12-29 2002-04-24 STMicroelectronics S.r.l. Supply voltages switch circuit
US6023431A (en) * 1996-10-03 2000-02-08 Micron Technology, Inc. Low current redundancy anti-fuse method and apparatus
DE69823982D1 (de) 1998-05-29 2004-06-24 St Microelectronics Srl Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen
DE60039027D1 (de) 2000-03-29 2008-07-10 St Microelectronics Srl Spannungsauswahlschaltung für nichtflüchtigen Speicher
JP4863844B2 (ja) 2006-11-08 2012-01-25 セイコーインスツル株式会社 電圧切替回路
JP5594191B2 (ja) * 2011-03-08 2014-09-24 株式会社リコー 半導体集積回路の出力バッファ回路、及び半導体集積回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4148099A (en) * 1978-04-11 1979-04-03 Ncr Corporation Memory device having a minimum number of pins
DE3044689C2 (de) * 1980-11-27 1982-08-26 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Schaltung mit nichtflüchtig programmierbaren Halbleiterspeichern
JPS57190352A (en) * 1981-05-20 1982-11-22 Nec Corp Programmable read only memory
JPS58114396A (ja) * 1981-12-26 1983-07-07 Toshiba Corp 不揮発性メモリ−
JPS6020394A (ja) * 1983-07-14 1985-02-01 Ricoh Co Ltd 電源切換回路
JPS6061996A (ja) * 1983-09-14 1985-04-09 Toshiba Corp 不揮発性メモリのアドレスデコ−ダ回路
JPS60124124A (ja) * 1983-12-08 1985-07-03 Nec Corp 入力回路
JPS62124700A (ja) * 1985-11-25 1987-06-05 Mitsubishi Electric Corp 電源切換回路
DE3869229D1 (de) * 1987-06-10 1992-04-23 Siemens Ag Generatorschaltung.

Also Published As

Publication number Publication date
JPH0731917B2 (ja) 1995-04-10
EP0322002A2 (en) 1989-06-28
DE3889211D1 (de) 1994-05-26
DE3889211T2 (de) 1994-11-17
EP0322002B1 (en) 1994-04-20
JPH023193A (ja) 1990-01-08
EP0322002A3 (en) 1990-10-10
IT8722827A0 (it) 1987-12-01
US5003511A (en) 1991-03-26

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227