DE69823982D1 - Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen - Google Patents

Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen

Info

Publication number
DE69823982D1
DE69823982D1 DE69823982T DE69823982T DE69823982D1 DE 69823982 D1 DE69823982 D1 DE 69823982D1 DE 69823982 T DE69823982 T DE 69823982T DE 69823982 T DE69823982 T DE 69823982T DE 69823982 D1 DE69823982 D1 DE 69823982D1
Authority
DE
Germany
Prior art keywords
memory cell
programmable memory
electrically programmable
monolithically integrated
cell devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69823982T
Other languages
English (en)
Inventor
Alessandro Manstretta
Andrea Pierin
Guido Torelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69823982D1 publication Critical patent/DE69823982D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
DE69823982T 1998-05-29 1998-05-29 Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen Expired - Fee Related DE69823982D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP98830332A EP0961288B1 (de) 1998-05-29 1998-05-29 Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen

Publications (1)

Publication Number Publication Date
DE69823982D1 true DE69823982D1 (de) 2004-06-24

Family

ID=8236668

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69823982T Expired - Fee Related DE69823982D1 (de) 1998-05-29 1998-05-29 Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen

Country Status (4)

Country Link
US (1) US6242971B1 (de)
EP (1) EP0961288B1 (de)
JP (1) JP2000067592A (de)
DE (1) DE69823982D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60039027D1 (de) 2000-03-29 2008-07-10 St Microelectronics Srl Spannungsauswahlschaltung für nichtflüchtigen Speicher
US6621745B1 (en) * 2002-06-18 2003-09-16 Atmel Corporation Row decoder circuit for use in programming a memory device
JP2004235499A (ja) * 2003-01-31 2004-08-19 Toshiba Corp 半導体装置
US6847249B1 (en) * 2003-10-09 2005-01-25 Analog Devices, Inc. Highest available voltage selector circuit
KR100564033B1 (ko) * 2003-12-05 2006-03-23 삼성전자주식회사 단일 버퍼 선택 입력 단자를 가지는 반도체 메모리 및반도체 메모리 테스트 방법
JP4143054B2 (ja) * 2004-08-19 2008-09-03 株式会社東芝 電圧生成回路
JP4863844B2 (ja) * 2006-11-08 2012-01-25 セイコーインスツル株式会社 電圧切替回路
US7536357B2 (en) * 2007-02-13 2009-05-19 International Business Machines Corporation Methodologies and analytics tools for identifying potential licensee markets
US8129862B2 (en) * 2009-10-23 2012-03-06 Analog Devices, Inc. Scalable highest available voltage selector circuit
TWI459188B (zh) * 2012-03-09 2014-11-01 Phison Electronics Corp 具智慧卡功能的記憶卡及其電源控制方法與電源控制電路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617473A (en) * 1984-01-03 1986-10-14 Intersil, Inc. CMOS backup power switching circuit
IT1232973B (it) * 1987-12-01 1992-03-11 Sgs Microelettronica Spa Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos
JP2733796B2 (ja) * 1990-02-13 1998-03-30 セイコーインスツルメンツ株式会社 スイッチ回路
US5157280A (en) * 1991-02-13 1992-10-20 Texas Instruments Incorporated Switch for selectively coupling a power supply to a power bus
US5517153A (en) * 1995-06-07 1996-05-14 Sgs-Thomson Microelectronics, Inc. Power supply isolation and switching circuit

Also Published As

Publication number Publication date
US6242971B1 (en) 2001-06-05
JP2000067592A (ja) 2000-03-03
EP0961288B1 (de) 2004-05-19
EP0961288A1 (de) 1999-12-01

Similar Documents

Publication Publication Date Title
DE59915200D1 (de) Elektrisch programmierbare, nichtflüchtige Speicherzellenanordnung
NO20014633D0 (no) Elektrisk programmerbart hukommelseselement med forbedrede kontakter
DE69924916D1 (de) Speicherschaltung
DE69919045D1 (de) Spannungserhöhungsschaltung für Speicheranordnung
DE69901233T2 (de) Isolierung für batteriekontakte
DE69903305D1 (de) Anisotrop leitender klebstoff für feinen kontaktabstand
DE69935273D1 (de) Elektrische Speichervorrichtung für auswechselbares Druckelement
DE69925768D1 (de) Stromzellenanordnung
ATE535975T1 (de) Zellenvereinigungsbaugruppe für elektrische schalteinrichtungen
DE69829011D1 (de) Referenz zelle für ferroelektrischen 1T/1C-Speicher
DE60110297D1 (de) Speichervorrichtung mit elektrisch programmierbaren Sicherungen
DE69921737D1 (de) Magnetische Speicherzelle
DE69832348D1 (de) Speicherschaltung
DE69930586D1 (de) Integrierte Halbleiterspeicherschaltung
DE69932472D1 (de) Halbleiter-Schmelzsicherung
DE59913423D1 (de) Speicherzellenanordnung
DE69627152D1 (de) Leseschaltung für Halbleiter-Speicherzellen
DE69909280D1 (de) Halbleiterspeicher
DE69823982D1 (de) Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen
DE69531349D1 (de) Spannungsgenerator für nichtflüchtige elektrisch-programmierbare Speicherzellen
DE50011761D1 (de) Fuse für halbleiteranordnung
DE69509581D1 (de) Elektrisch programmierbare Speicherzelle
DE50014731D1 (de) Speicherzellenanordnung
FR2776830B1 (fr) Cellule memoire electriquement programmable
DE59807185D1 (de) Elektrisches Kontaktelement

Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee