IL140510A - Install a non-volatile semiconductor memory device - Google Patents
Install a non-volatile semiconductor memory deviceInfo
- Publication number
- IL140510A IL140510A IL14051000A IL14051000A IL140510A IL 140510 A IL140510 A IL 140510A IL 14051000 A IL14051000 A IL 14051000A IL 14051000 A IL14051000 A IL 14051000A IL 140510 A IL140510 A IL 140510A
- Authority
- IL
- Israel
- Prior art keywords
- memory cell
- bit line
- dummy
- nonvolatile semiconductor
- cell
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11588799 | 1999-04-23 | ||
JP2000111573A JP3359615B2 (ja) | 1999-04-23 | 2000-04-13 | 不揮発性半導体記憶装置 |
PCT/JP2000/002653 WO2000065601A1 (fr) | 1999-04-23 | 2000-04-21 | Mémoire rémanente à semiconducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
IL140510A0 IL140510A0 (en) | 2002-02-10 |
IL140510A true IL140510A (en) | 2004-06-20 |
Family
ID=26454308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL14051000A IL140510A (en) | 1999-04-23 | 2000-04-21 | Install a non-volatile semiconductor memory device |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1091359B1 (ja) |
JP (1) | JP3359615B2 (ja) |
KR (1) | KR100598289B1 (ja) |
AT (1) | ATE352842T1 (ja) |
AU (1) | AU3842500A (ja) |
DE (1) | DE60033104T2 (ja) |
IL (1) | IL140510A (ja) |
WO (1) | WO2000065601A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100554829B1 (ko) * | 2002-07-08 | 2006-02-22 | 주식회사 하이닉스반도체 | 센스증폭기 |
EP1597733B1 (de) | 2003-02-27 | 2009-12-02 | Infineon Technologies AG | Verfahren zum auslesen von uniform-channel-program-flash memory zellen |
DE102005058601A1 (de) | 2004-12-27 | 2006-07-06 | Hynix Semiconductor Inc., Icheon | Flash-Speicherbauelement |
KR100739946B1 (ko) | 2004-12-27 | 2007-07-16 | 주식회사 하이닉스반도체 | 더미 워드라인을 구비한 낸드 플래시 메모리 장치 |
KR100784862B1 (ko) | 2006-01-09 | 2007-12-14 | 삼성전자주식회사 | 더미 셀을 포함하는 플래시 메모리 장치 |
JP2010123987A (ja) * | 2010-01-14 | 2010-06-03 | Hitachi Ltd | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06290591A (ja) * | 1993-03-31 | 1994-10-18 | Sony Corp | 半導体不揮発性記憶装置 |
JPH0757484A (ja) * | 1993-08-11 | 1995-03-03 | Sony Corp | Nor型不揮発性メモリ制御回路 |
JP3570038B2 (ja) * | 1994-11-21 | 2004-09-29 | ソニー株式会社 | 半導体不揮発性記憶装置 |
-
2000
- 2000-04-13 JP JP2000111573A patent/JP3359615B2/ja not_active Expired - Lifetime
- 2000-04-21 AT AT00917428T patent/ATE352842T1/de not_active IP Right Cessation
- 2000-04-21 KR KR1020007014756A patent/KR100598289B1/ko not_active IP Right Cessation
- 2000-04-21 IL IL14051000A patent/IL140510A/en not_active IP Right Cessation
- 2000-04-21 DE DE60033104T patent/DE60033104T2/de not_active Expired - Lifetime
- 2000-04-21 EP EP00917428A patent/EP1091359B1/en not_active Expired - Lifetime
- 2000-04-21 WO PCT/JP2000/002653 patent/WO2000065601A1/ja active IP Right Grant
- 2000-04-21 AU AU38425/00A patent/AU3842500A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE60033104T2 (de) | 2007-05-16 |
IL140510A0 (en) | 2002-02-10 |
DE60033104D1 (de) | 2007-03-15 |
EP1091359A4 (en) | 2004-11-24 |
EP1091359A1 (en) | 2001-04-11 |
AU3842500A (en) | 2000-11-10 |
KR100598289B1 (ko) | 2006-07-07 |
ATE352842T1 (de) | 2007-02-15 |
KR20010071596A (ko) | 2001-07-28 |
EP1091359B1 (en) | 2007-01-24 |
WO2000065601A1 (fr) | 2000-11-02 |
JP2001006377A (ja) | 2001-01-12 |
JP3359615B2 (ja) | 2002-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
MM9K | Patent not in force due to non-payment of renewal fees |