DE60033104D1 - Nichtfluechtiger halbleiterspeicher - Google Patents

Nichtfluechtiger halbleiterspeicher

Info

Publication number
DE60033104D1
DE60033104D1 DE60033104T DE60033104T DE60033104D1 DE 60033104 D1 DE60033104 D1 DE 60033104D1 DE 60033104 T DE60033104 T DE 60033104T DE 60033104 T DE60033104 T DE 60033104T DE 60033104 D1 DE60033104 D1 DE 60033104D1
Authority
DE
Germany
Prior art keywords
dummy
bit line
semiconductor memory
volatile semiconductor
tdwl0
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60033104T
Other languages
English (en)
Other versions
DE60033104T2 (de
Inventor
Takafumi Maruyama
Makoto Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE60033104D1 publication Critical patent/DE60033104D1/de
Publication of DE60033104T2 publication Critical patent/DE60033104T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE60033104T 1999-04-23 2000-04-21 Nichtfluechtiger halbleiterspeicher Expired - Lifetime DE60033104T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11588799 1999-04-23
JP11588799 1999-04-23
JP2000111573 2000-04-13
JP2000111573A JP3359615B2 (ja) 1999-04-23 2000-04-13 不揮発性半導体記憶装置
PCT/JP2000/002653 WO2000065601A1 (fr) 1999-04-23 2000-04-21 Mémoire rémanente à semiconducteur

Publications (2)

Publication Number Publication Date
DE60033104D1 true DE60033104D1 (de) 2007-03-15
DE60033104T2 DE60033104T2 (de) 2007-05-16

Family

ID=26454308

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033104T Expired - Lifetime DE60033104T2 (de) 1999-04-23 2000-04-21 Nichtfluechtiger halbleiterspeicher

Country Status (8)

Country Link
EP (1) EP1091359B1 (de)
JP (1) JP3359615B2 (de)
KR (1) KR100598289B1 (de)
AT (1) ATE352842T1 (de)
AU (1) AU3842500A (de)
DE (1) DE60033104T2 (de)
IL (1) IL140510A (de)
WO (1) WO2000065601A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100554829B1 (ko) * 2002-07-08 2006-02-22 주식회사 하이닉스반도체 센스증폭기
EP1597733B1 (de) 2003-02-27 2009-12-02 Infineon Technologies AG Verfahren zum auslesen von uniform-channel-program-flash memory zellen
DE102005058601A1 (de) 2004-12-27 2006-07-06 Hynix Semiconductor Inc., Icheon Flash-Speicherbauelement
KR100739946B1 (ko) 2004-12-27 2007-07-16 주식회사 하이닉스반도체 더미 워드라인을 구비한 낸드 플래시 메모리 장치
KR100784862B1 (ko) 2006-01-09 2007-12-14 삼성전자주식회사 더미 셀을 포함하는 플래시 메모리 장치
JP2010123987A (ja) * 2010-01-14 2010-06-03 Hitachi Ltd 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06290591A (ja) * 1993-03-31 1994-10-18 Sony Corp 半導体不揮発性記憶装置
JPH0757484A (ja) * 1993-08-11 1995-03-03 Sony Corp Ｎｏｒ型不揮発性メモリ制御回路
JP3570038B2 (ja) * 1994-11-21 2004-09-29 ソニー株式会社 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
DE60033104T2 (de) 2007-05-16
IL140510A0 (en) 2002-02-10
EP1091359A4 (de) 2004-11-24
EP1091359A1 (de) 2001-04-11
AU3842500A (en) 2000-11-10
IL140510A (en) 2004-06-20
KR100598289B1 (ko) 2006-07-07
ATE352842T1 (de) 2007-02-15
KR20010071596A (ko) 2001-07-28
EP1091359B1 (de) 2007-01-24
WO2000065601A1 (fr) 2000-11-02
JP2001006377A (ja) 2001-01-12
JP3359615B2 (ja) 2002-12-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP