IL118756A - Ferroelectric cell - Google Patents

Ferroelectric cell

Info

Publication number
IL118756A
IL118756A IL11875696A IL11875696A IL118756A IL 118756 A IL118756 A IL 118756A IL 11875696 A IL11875696 A IL 11875696A IL 11875696 A IL11875696 A IL 11875696A IL 118756 A IL118756 A IL 118756A
Authority
IL
Israel
Prior art keywords
ferroelectric cell
ferroelectric
cell
Prior art date
Application number
IL11875696A
Other languages
English (en)
Other versions
IL118756A0 (en
Original Assignee
Telecordia Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telecordia Tech Inc filed Critical Telecordia Tech Inc
Publication of IL118756A0 publication Critical patent/IL118756A0/xx
Publication of IL118756A publication Critical patent/IL118756A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
IL11875696A 1995-06-28 1996-06-28 Ferroelectric cell IL118756A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49745795A 1995-06-28 1995-06-28

Publications (2)

Publication Number Publication Date
IL118756A0 IL118756A0 (en) 1996-10-16
IL118756A true IL118756A (en) 2000-11-21

Family

ID=23976959

Family Applications (1)

Application Number Title Priority Date Filing Date
IL11875696A IL118756A (en) 1995-06-28 1996-06-28 Ferroelectric cell

Country Status (8)

Country Link
US (1) US5838035A (xx)
EP (1) EP0972309A4 (xx)
JP (1) JP3373525B2 (xx)
KR (1) KR100292012B1 (xx)
CA (1) CA2225681C (xx)
IL (1) IL118756A (xx)
TW (1) TW298649B (xx)
WO (1) WO1997001854A1 (xx)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194751B1 (en) * 1994-11-15 2001-02-27 Radiant Technologies, Inc Ferroelectric based memory devices utilizing low Curie point ferroelectrics and encapsulation
US5541807A (en) * 1995-03-17 1996-07-30 Evans, Jr.; Joseph T. Ferroelectric based capacitor for use in memory systems and method for fabricating the same
JP3417167B2 (ja) * 1995-09-29 2003-06-16 ソニー株式会社 半導体メモリ素子のキャパシタ構造及びその形成方法
US5777356A (en) * 1996-01-03 1998-07-07 Bell Communications Research, Inc. Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
JP3385889B2 (ja) * 1996-12-25 2003-03-10 株式会社日立製作所 強誘電体メモリ素子及びその製造方法
EP1078404A4 (en) * 1997-06-09 2001-02-28 Telcordia Tech Inc ANOVAL OF PEROVKITE CRYSTALS IN FERROELETRIC CELLS AND CELLS WITH IMPROVED BARRIER PROPERTIES
US6020233A (en) * 1997-06-30 2000-02-01 Hyundai Electronics Industries Co., Ltd. Ferroelectric memory device guaranteeing electrical interconnection between lower capacitor electrode and contact plug and method for fabricating the same
US5910880A (en) * 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US6200874B1 (en) * 1997-08-22 2001-03-13 Micron Technology, Inc. Methods for use in forming a capacitor
JPH11195768A (ja) * 1997-10-22 1999-07-21 Fujitsu Ltd ペロブスカイト型酸化物膜を含む電子装置とその製造方法及び強誘電体キャパシタ
US6313539B1 (en) * 1997-12-24 2001-11-06 Sharp Kabushiki Kaisha Semiconductor memory device and production method of the same
US6162744A (en) * 1998-02-28 2000-12-19 Micron Technology, Inc. Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
US6156638A (en) 1998-04-10 2000-12-05 Micron Technology, Inc. Integrated circuitry and method of restricting diffusion from one material to another
US6730559B2 (en) 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
US6700145B1 (en) * 1998-04-30 2004-03-02 International Business Machines Corporation Capacitor with high charge storage capacity
US6165834A (en) * 1998-05-07 2000-12-26 Micron Technology, Inc. Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
US6255186B1 (en) 1998-05-21 2001-07-03 Micron Technology, Inc. Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom
JP3931445B2 (ja) * 1998-09-10 2007-06-13 株式会社日立製作所 半導体装置の製造方法
JP3249496B2 (ja) * 1998-11-10 2002-01-21 株式会社東芝 半導体装置及び半導体装置の製造方法
AU1539900A (en) * 1998-11-30 2000-06-19 Interuniversitair Micro-Elektronica Centrum Method of fabrication of a ferro-electric capacitor and method of growing a pzt layer on a substrate
DE19858357A1 (de) * 1998-12-17 2000-06-29 Siemens Ag Mikroelektronische Struktur sowie Verfahren zu deren Herstellung
US6144053A (en) * 1999-01-20 2000-11-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a capacitor with a high dielectric constant film
US6075264A (en) 1999-01-25 2000-06-13 Samsung Electronics Co., Ltd. Structure of a ferroelectric memory cell and method of fabricating it
US6194754B1 (en) * 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
US6190963B1 (en) * 1999-05-21 2001-02-20 Sharp Laboratories Of America, Inc. Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same
US6688729B1 (en) * 1999-06-04 2004-02-10 Canon Kabushiki Kaisha Liquid discharge head substrate, liquid discharge head, liquid discharge apparatus having these elements, manufacturing method of liquid discharge head, and driving method of the same
US6333202B1 (en) * 1999-08-26 2001-12-25 International Business Machines Corporation Flip FERAM cell and method to form same
KR100335494B1 (ko) * 1999-10-30 2002-05-08 윤종용 Ｂｓｔ 유전막에 구리를 함유한 커패시터 및 그 제조방법
DE19958200B4 (de) * 1999-12-02 2006-07-06 Infineon Technologies Ag Mikroelektronische Struktur und Verfahren zu deren Herstellung
US6475854B2 (en) 1999-12-30 2002-11-05 Applied Materials, Inc. Method of forming metal electrodes
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US7005695B1 (en) 2000-02-23 2006-02-28 Micron Technology, Inc. Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
KR100616211B1 (ko) * 2000-06-19 2006-08-25 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US6597028B2 (en) * 2000-06-26 2003-07-22 Ramtron International Corporation Capacitively coupled ferroelectric random access memory cell and a method for manufacturing the same
US20020000584A1 (en) * 2000-06-28 2002-01-03 Motorola, Inc. Semiconductor structure and device including a monocrystalline conducting layer and method for fabricating the same
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6579783B2 (en) 2000-07-07 2003-06-17 Applied Materials, Inc. Method for high temperature metal deposition for reducing lateral silicidation
US6432546B1 (en) * 2000-07-24 2002-08-13 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
KR100687433B1 (ko) * 2000-07-29 2007-02-26 주식회사 하이닉스반도체 캐패시터의 하부전극 형성 방법
US6518198B1 (en) 2000-08-31 2003-02-11 Micron Technology, Inc. Electroless deposition of doped noble metals and noble metal alloys
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US7378719B2 (en) * 2000-12-20 2008-05-27 Micron Technology, Inc. Low leakage MIM capacitor
US6794705B2 (en) * 2000-12-28 2004-09-21 Infineon Technologies Ag Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials
US6674633B2 (en) * 2001-02-28 2004-01-06 Fujitsu Limited Process for producing a strontium ruthenium oxide protective layer on a top electrode
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
KR100359299B1 (en) * 2001-03-26 2002-11-07 Samsung Electronics Co Ltd Semiconductor memory device having resist pattern and method for forming metal contact thereof
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6858862B2 (en) * 2001-06-29 2005-02-22 Intel Corporation Discrete polymer memory array and method of making same
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6531740B2 (en) 2001-07-17 2003-03-11 Motorola, Inc. Integrated impedance matching and stability network
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6960479B2 (en) * 2001-07-20 2005-11-01 Intel Corporation Stacked ferroelectric memory device and method of making same
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
JP2003051582A (ja) * 2001-08-07 2003-02-21 Hitachi Ltd 半導体装置およびその製造方法
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6743643B2 (en) * 2001-11-29 2004-06-01 Symetrix Corporation Stacked memory cell having diffusion barriers
US6787831B2 (en) * 2002-01-15 2004-09-07 Infineon Technologies Aktiengesellschaft Barrier stack with improved barrier properties
JP2004146772A (ja) * 2002-03-18 2004-05-20 Fujitsu Ltd 半導体装置及びその製造方法
JP4859333B2 (ja) * 2002-03-25 2012-01-25 セイコーエプソン株式会社 電子デバイス用基板の製造方法
JP2004221467A (ja) * 2003-01-17 2004-08-05 Fujitsu Ltd 半導体装置及びその製造方法
US7095067B2 (en) * 2003-05-27 2006-08-22 Lucent Technologies Inc. Oxidation-resistant conducting perovskites
JP4663216B2 (ja) * 2003-06-10 2011-04-06 ルネサスエレクトロニクス株式会社 半導体記憶装置およびその製造方法
DE10341059B4 (de) 2003-09-05 2007-05-31 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
TWI253392B (en) * 2004-03-29 2006-04-21 Canon Kk Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus
TWI244205B (en) * 2004-06-11 2005-11-21 Univ Tsinghua A lead barium zirconate-based fatigue resistance ferroelectric and ferroelectric memory device made from the same
KR100718267B1 (ko) * 2005-03-23 2007-05-14 삼성전자주식회사 강유전체 구조물, 이의 제조 방법, 이를 포함하는 반도체장치 및 그 제조 방법
US20070120164A1 (en) * 2005-10-20 2007-05-31 Canon Kabushiki Kaisha Film forming method and oxide thin film element
JP4433200B2 (ja) * 2005-12-20 2010-03-17 セイコーエプソン株式会社 強誘電体キャパシタおよび半導体装置
KR100713936B1 (ko) * 2006-04-14 2007-05-07 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
KR100823168B1 (ko) * 2007-01-08 2008-04-18 삼성전자주식회사 강유전체 메모리 장치 및 그 형성 방법
JP2011060825A (ja) * 2009-09-07 2011-03-24 Elpida Memory Inc 半導体装置及びその製造方法
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US8685813B2 (en) * 2012-02-15 2014-04-01 Cypress Semiconductor Corporation Method of integrating a charge-trapping gate stack into a CMOS flow
WO2019173626A1 (en) 2018-03-07 2019-09-12 Space Charge, LLC Thin-film solid-state energy-storage devices
WO2020210254A1 (en) 2019-04-08 2020-10-15 Kepler Computing Inc. Doped polar layers and semiconductor device incorporating same

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423087A (en) * 1981-12-28 1983-12-27 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US4495222A (en) * 1983-11-07 1985-01-22 Motorola, Inc. Metallization means and method for high temperature applications
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
US5146299A (en) * 1990-03-02 1992-09-08 Westinghouse Electric Corp. Ferroelectric thin film material, method of deposition, and devices using same
NL9000602A (nl) * 1990-03-16 1991-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum.
US5130275A (en) * 1990-07-02 1992-07-14 Digital Equipment Corp. Post fabrication processing of semiconductor chips
JP3021800B2 (ja) * 1990-07-24 2000-03-15 セイコーエプソン株式会社 半導体装置及びその製造方法
JP3006053B2 (ja) * 1990-08-07 2000-02-07 セイコーエプソン株式会社 半導体装置
JPH04158570A (ja) * 1990-10-22 1992-06-01 Seiko Epson Corp 半導体装置の構造及びその製造方法
US5168420A (en) * 1990-11-20 1992-12-01 Bell Communications Research, Inc. Ferroelectrics epitaxially grown on superconducting substrates
JP3264506B2 (ja) * 1991-11-18 2002-03-11 ローム株式会社 強誘電体不揮発性記憶装置
DE4294151C2 (de) * 1991-12-03 1998-02-05 Denso Corp Magnetoresistives Element und Herstellungsverfahren dafür
US5468684A (en) * 1991-12-13 1995-11-21 Symetrix Corporation Integrated circuit with layered superlattice material and method of fabricating same
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
JPH05283756A (ja) * 1992-03-31 1993-10-29 Murata Mfg Co Ltd 強誘電体薄膜素子
JP3351856B2 (ja) * 1992-04-20 2002-12-03 テキサス インスツルメンツ インコーポレイテツド 構造体およびコンデンサの製造方法
JP3407204B2 (ja) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 強誘電体集積回路及びその製造方法
US5248564A (en) * 1992-12-09 1993-09-28 Bell Communications Research, Inc. C-axis perovskite thin films grown on silicon dioxide
EP0618597B1 (en) * 1993-03-31 1997-07-16 Texas Instruments Incorporated Lightly donor doped electrodes for high-dielectric-constant materials
JP3319869B2 (ja) * 1993-06-24 2002-09-03 三菱電機株式会社 半導体記憶装置およびその製造方法
US5440173A (en) * 1993-09-17 1995-08-08 Radiant Technologies High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same
JPH0793969A (ja) * 1993-09-22 1995-04-07 Olympus Optical Co Ltd 強誘電体容量素子
US5585300A (en) * 1994-08-01 1996-12-17 Texas Instruments Incorporated Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
US5554564A (en) * 1994-08-01 1996-09-10 Texas Instruments Incorporated Pre-oxidizing high-dielectric-constant material electrodes
US5479317A (en) * 1994-10-05 1995-12-26 Bell Communications Research, Inc. Ferroelectric capacitor heterostructure and method of making same
US5519235A (en) * 1994-11-18 1996-05-21 Bell Communications Research, Inc. Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
US5563762A (en) * 1994-11-28 1996-10-08 Northern Telecom Limited Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
US5593914A (en) * 1996-03-19 1997-01-14 Radiant Technologies, Inc. Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces
GB9807028D0 (en) * 1998-04-02 1998-06-03 Technical Fibre Products Limit Intumescent material

Also Published As

Publication number Publication date
EP0972309A1 (en) 2000-01-19
KR19990035743A (ko) 1999-05-25
JPH11502376A (ja) 1999-02-23
WO1997001854A1 (en) 1997-01-16
JP3373525B2 (ja) 2003-02-04
CA2225681A1 (en) 1997-01-16
IL118756A0 (en) 1996-10-16
EP0972309A4 (en) 2000-01-19
TW298649B (xx) 1997-02-21
KR100292012B1 (ko) 2001-11-15
US5838035A (en) 1998-11-17
CA2225681C (en) 2001-09-11

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HK Corrigendum

Free format text: JOURNAL NO. 7/96 PAGE 1740, CORRECT THE PRIORITY NUMBER TO: US 497457 28.06.1995

FF Patent granted
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees