GB2352508B - Method and apparatus for heating a wafer and method and apparatus for baking a photoresist film on a wafer - Google Patents

Method and apparatus for heating a wafer and method and apparatus for baking a photoresist film on a wafer

Info

Publication number
GB2352508B
GB2352508B GB0018386A GB0018386A GB2352508B GB 2352508 B GB2352508 B GB 2352508B GB 0018386 A GB0018386 A GB 0018386A GB 0018386 A GB0018386 A GB 0018386A GB 2352508 B GB2352508 B GB 2352508B
Authority
GB
United Kingdom
Prior art keywords
wafer
baking
heating
photoresist film
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0018386A
Other versions
GB0018386D0 (en
GB2352508A (en
Inventor
Chan-Hoon Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0018386D0 publication Critical patent/GB0018386D0/en
Publication of GB2352508A publication Critical patent/GB2352508A/en
Application granted granted Critical
Publication of GB2352508B publication Critical patent/GB2352508B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0233—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
GB0018386A 1999-07-26 2000-07-26 Method and apparatus for heating a wafer and method and apparatus for baking a photoresist film on a wafer Expired - Fee Related GB2352508B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990030350A KR100351049B1 (en) 1999-07-26 1999-07-26 Wafer heating method and the device adopting the same

Publications (3)

Publication Number Publication Date
GB0018386D0 GB0018386D0 (en) 2000-09-13
GB2352508A GB2352508A (en) 2001-01-31
GB2352508B true GB2352508B (en) 2003-10-08

Family

ID=36693973

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0018282A Withdrawn GB2352507A (en) 1999-07-26 2000-07-25 A method and apparatus for heating a wafer
GB0018386A Expired - Fee Related GB2352508B (en) 1999-07-26 2000-07-26 Method and apparatus for heating a wafer and method and apparatus for baking a photoresist film on a wafer

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB0018282A Withdrawn GB2352507A (en) 1999-07-26 2000-07-25 A method and apparatus for heating a wafer

Country Status (6)

Country Link
JP (2) JP2001093795A (en)
KR (1) KR100351049B1 (en)
CN (2) CN1193266C (en)
DE (2) DE10036001A1 (en)
GB (2) GB2352507A (en)
TW (2) TW428224B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3882141B2 (en) * 2002-06-13 2007-02-14 日鉱金属株式会社 Vapor growth apparatus and vapor growth method
US7170582B2 (en) * 2004-12-13 2007-01-30 Asml Netherlands B.V. Support device and lightographic apparatus
JP4657940B2 (en) * 2006-02-10 2011-03-23 東京エレクトロン株式会社 Substrate processing system
JP2007258303A (en) * 2006-03-22 2007-10-04 Tokyo Electron Ltd Substrate heat-treatment device
JP5384339B2 (en) * 2006-07-28 2014-01-08 マッパー・リソグラフィー・アイピー・ビー．ブイ． Lithography system, method of heat dissipation, and frame
US20080142208A1 (en) * 2006-12-15 2008-06-19 Applied Materials, Inc. Method and apparatus for heating a substrate
US20080145038A1 (en) * 2006-12-15 2008-06-19 Applied Materials, Inc. Method and apparatus for heating a substrate
CN102067039B (en) * 2008-08-08 2014-04-09 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method
TWI757314B (en) * 2016-07-28 2022-03-11 荷蘭商Ａｓｍｌ荷蘭公司 Substrate holding device, method for manufacturing such a device, and apparatus and method for processing or imaging a sample
US20180096867A1 (en) * 2016-09-30 2018-04-05 Momentive Performance Materials Inc. Heating apparatus with controlled thermal contact
JP6837202B2 (en) * 2017-01-23 2021-03-03 パナソニックＩｐマネジメント株式会社 Substrate heating device and method and manufacturing method of electronic device
CN108662930A (en) * 2017-09-28 2018-10-16 上海微电子装备（集团）股份有限公司 A kind of hot plate apparatus
CN108158039B (en) * 2018-01-03 2023-07-11 云南中烟工业有限责任公司 MEMS heating chip integrated with multiple Pt temperature sensors and manufacturing method thereof
CN108158040B (en) * 2018-01-03 2023-11-21 云南中烟工业有限责任公司 MEMS electronic cigarette chip capable of uniformly heating and manufacturing method thereof
CN108185526B (en) * 2018-01-03 2023-09-01 云南中烟工业有限责任公司 MEMS heating chip integrated with diode temperature sensor and manufacturing method thereof
CN108354228B (en) * 2018-01-03 2023-07-25 云南中烟工业有限责任公司 MEMS heating chip integrated with Pt temperature sensor and manufacturing method thereof
CN108538760B (en) * 2018-04-03 2020-11-27 德淮半导体有限公司 Hot plate structure
EP3830864B1 (en) * 2018-08-01 2024-01-03 Momentive Performance Materials Inc. Detachable thermal leveler
KR102236933B1 (en) * 2019-10-21 2021-04-05 정승수 Heat block for manufacturing semiconductor and display panel
US11487206B2 (en) * 2019-12-30 2022-11-01 Texas Instruments Incorporated Methods and apparatus for digital material deposition onto semiconductor wafers
JP2022003285A (en) * 2020-06-23 2022-01-11 トクデン株式会社 Heat transfer plate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534312A (en) * 1982-08-30 1985-08-13 Ricoh Company, Ltd. Vacuum evaporation apparatus
US5025133A (en) * 1989-04-04 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer heating device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3943482C2 (en) * 1989-05-08 1994-07-07 Balzers Hochvakuum Workpiece carrier for a disc-shaped workpiece, as well as vacuum process chamber
JP2935867B2 (en) * 1990-03-28 1999-08-16 ホーヤ株式会社 Substrate heat treatment equipment
JP3119950B2 (en) * 1992-09-30 2000-12-25 株式会社東芝 Pattern formation method
JP2907687B2 (en) * 1993-06-10 1999-06-21 大日本スクリーン製造株式会社 Substrate heating device
JPH07152158A (en) * 1993-11-30 1995-06-16 Sigma Merutetsuku Kk Substrate heater
JP3614503B2 (en) * 1995-04-18 2005-01-26 富士写真フイルム株式会社 Heat treatment method and apparatus for photosensitive lithographic printing plate
JP3983831B2 (en) * 1995-05-30 2007-09-26 シグマメルテック株式会社 Substrate baking apparatus and substrate baking method
JPH10189611A (en) * 1996-12-24 1998-07-21 Sony Corp Device for heating semiconductor wafer
KR100339875B1 (en) * 1998-12-28 2002-10-11 (주) 대홍기업 Plate heating device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534312A (en) * 1982-08-30 1985-08-13 Ricoh Company, Ltd. Vacuum evaporation apparatus
US5025133A (en) * 1989-04-04 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer heating device

Also Published As

Publication number Publication date
CN1282003A (en) 2001-01-31
TW473873B (en) 2002-01-21
CN1282005A (en) 2001-01-31
GB2352507A (en) 2001-01-31
JP2001093795A (en) 2001-04-06
GB0018386D0 (en) 2000-09-13
CN1249522C (en) 2006-04-05
GB0018282D0 (en) 2000-09-13
DE10036001A1 (en) 2001-02-22
KR20010011123A (en) 2001-02-15
GB2352508A (en) 2001-01-31
JP2001085324A (en) 2001-03-30
KR100351049B1 (en) 2002-09-09
DE10036183A1 (en) 2001-02-01
DE10036183B4 (en) 2004-06-17
CN1193266C (en) 2005-03-16
TW428224B (en) 2001-04-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090726