CN108354228B - MEMS heating chip integrated with Pt temperature sensor and manufacturing method thereof - Google Patents
MEMS heating chip integrated with Pt temperature sensor and manufacturing method thereof Download PDFInfo
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- CN108354228B CN108354228B CN201810004078.9A CN201810004078A CN108354228B CN 108354228 B CN108354228 B CN 108354228B CN 201810004078 A CN201810004078 A CN 201810004078A CN 108354228 B CN108354228 B CN 108354228B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 239000003571 electronic cigarette Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 30
- 241000208125 Nicotiana Species 0.000 description 6
- 235000002637 Nicotiana tabacum Nutrition 0.000 description 6
- 238000009529 body temperature measurement Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 4
- 230000032683 aging Effects 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000619 316 stainless steel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 210000002345 respiratory system Anatomy 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000031070 response to heat Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Micromachines (AREA)
Abstract
The invention discloses an MEMS electronic cigarette heating chip integrating a Pt film resistor temperature sensor, which comprises: a first substrate (1-1) having a concave microcavity (2) on its front surface; a micro through hole (3) penetrating through the first substrate (1-1) is arranged in the micro cavity (2); the second substrate (1-2), its back has micro-flow channel array (4) perpendicular to its back, the front central area has porous structure (5) perpendicular to its front, micro-flow channel array (4) communicates with porous structure (5); the front edge of the metal wire is provided with a metal bonding pad (6); the front surface of the device is provided with a Pt film resistor temperature sensor (7); the front surface of the first substrate (1-1) and the back surface of the second substrate (1-2) are bonded together. The temperature of the heating chip of the electronic cigarette can be measured in real time. The invention also discloses a preparation method of the MEMS electronic cigarette heating chip integrated with the Pt film resistance temperature sensor.
Description
Technical Field
The invention relates to the technical field of electronic cigarettes, in particular to an MEMS electronic cigarette heating chip integrated with a Pt film resistor temperature sensor and a manufacturing method thereof.
Background
Most commercial electronic cigarettes adopt heating wires as heating elements, and in a power supply state, the heating wires heat the tobacco liquid to be atomized through high heat generated by electric heating conversion. Due to the spiral structure of the heating wire and the winding mode of the oil guide piece, the phenomenon of local high temperature is unavoidable when the heating wire works. The tobacco juice components and the oil guiding materials can change physicochemical properties at the too high temperature of the electronic cigarette, and harmful cracking products can be generated; at high temperature, some aroma components in the tobacco juice can be destroyed, and the richness of the odor absorption is affected; too high temperature of the electronic cigarette can also cause too high temperature of smoke generated by atomization, and the respiratory tract can be damaged; in the case of insufficient supply of tobacco liquid, too high a temperature may burn the atomized core (paste core) to generate a burnt smell, and the suction experience is deteriorated.
In order to improve the above drawbacks, in recent years, a temperature control technology has appeared in electronic cigarettes. The basic principle of the temperature control technology is as follows: the electronic cigarette temperature control chip monitors the temperature of the heating wire by reading the resistance of the heating wire. The heating wire is essentially a resistance wire, when the temperature of the heating wire is increased, the collision number among metal ions in the heating wire is increased, and then the resistivity of the metal is changed along with the temperature, and the temperature and the resistance are related through the temperature coefficient of resistance. Specifically, the electronic cigarette is internally provided with a heating wire resistance detection circuit, so that a user is allowed to set the highest temperature of the heating wire according to own preference. The reference resistance of the heating wire is measured at room temperature to determine the correct temperature associated with the reference resistance, and then the operating temperature of the electronic cigarette is estimated by continuously measuring the resistance of the electronic cigarette at start-up and applying a resistance-temperature equation. And regulating the output power of the battery through a specific algorithm of the temperature control chip, so that the resistance value of the heating wire does not exceed a calculated value corresponding to the temperature set by a user. The types of temperature control heating wires commonly used at present mainly comprise nickel 200, titanium, 316 stainless steel wires and the like. The advantage of this technique is that the heater can not overheated, can not dry combustion method, also avoided peculiar smell and harmful substance that produces under the excessive evaporating temperature of tobacco juice simultaneously, promotes the whole experience and the safety in utilization of electron cigarette by a wide margin.
At present, the temperature control applied to the electronic cigarette is actually realized by converting the corresponding temperature according to the resistance value change of the metal, so that the temperature control is realized finally according to the resistance change of the heating wire. The temperature control mode does not detect the temperature through a temperature sensor, but converts temperature information through the resistance change of the heating wire calculated by the electronic cigarette host chip, so that the temperature control of the electronic cigarette at present is actually based on the resistance change of the heating wire and is not judged by the actual temperature, and as a result, the accuracy of the temperature is directly related to the accuracy of the resistance, if the initial resistance detected by the chip is inaccurate, the temperature calculated according to the resistance temperature coefficient is inaccurate, and if the base number is wrong, the whole calculation result is wrong. In addition, the temperature control mode still has the following problems: the resistance value of the heating wire can only reflect the overall temperature condition, and when the local temperature is too high, the resistance value cannot be effectively monitored; in the use process, the heating wire can cause resistance change due to high-temperature aging, oxidization and the like, and the temperature measurement error can be larger and larger.
Among the many methods of temperature measurement, a resistance temperature sensor (or resistance temperature detector, often abbreviated as RTD) is one of the most accurate methods, and a thin film resistance temperature sensor has advantages over conventional RTDs in terms of high sensitivity and rapid thermal response because of its smaller size which reduces heat exchange between the sensing element and the environment. Platinum metal (Pt) is the material of choice for thin film resistance temperature sensors due to its good response to heat, a highly linear positive correlation between resistivity and temperature, and long-term chemical stability at high temperatures. Currently, most Pt thin film resistance temperature sensors can be fabricated on silicon or metal substrates using a COMS (complementary metal oxide semiconductor) process or a MEMS (micro-electromechanical systems) process. The use of Pt, in particular in MEMS devices, allows the fabrication of structures that are highly resistant to plastic deformation at elevated temperatures.
Disclosure of Invention
The invention aims to solve the problems of the existing electronic cigarette temperature control technology, and designs an MEMS electronic cigarette heating chip integrating a temperature sensor and a manufacturing method thereof by adopting an advanced MEMS processing technology. Through integrating Pt temperature sensor, the temperature of MEMS heating chip is measured accurately in real time to cooperate outside temperature controller, realize the accurate control of MEMS heating chip, make the even atomizing of tobacco juice.
The first aspect of the invention discloses an MEMS electronic cigarette heating chip integrated with a Pt film resistor temperature sensor, which comprises:
the first substrate 1-1 is sheet-shaped, and the front surface of the first substrate is provided with a concave microcavity 2; the microcavity 2 is internally provided with a micro through hole 3 penetrating through the first substrate 1-1;
the second substrate 1-2 is in a sheet shape, the back surface of the second substrate is provided with a micro-channel array 4 perpendicular to the back surface of the second substrate, the center area of the front surface of the second substrate is provided with a porous structure 5 perpendicular to the front surface of the second substrate, and the micro-channel array 4 is communicated with the porous structure 5; the front edge of the metal pad is provided with a metal bonding pad 6; a Pt film resistor temperature sensor 7 is arranged in the center of the front surface of the glass;
the front surface of the first substrate 1-1 and the back surface of the second substrate 1-2 are bonded together.
Preferably, the depth of the microcavity 2 is 1 to 5 millimeters; the micro-vias 3 have a diameter of 500 microns to 1 mm.
Preferably, the front surface of the second substrate 1-2 is provided with a metal film, and the thickness of the metal film is 200-500 nm; the metal film is made of one or more of Ti/Pt/Au, tiW/Au, al, cr or Pt/Au.
Preferably, the diameter of the micro flow channel array 4 is 10 micrometers to 500 micrometers, and the depth of the micro flow channel is 1/2 to 3/4 of the height of the second substrate 1-2.
Preferably, the pore size of the porous structure 5 is 100 nm to 1000 nm.
Preferably, the first substrate is made of glass or high-resistance monocrystalline silicon, and the resistivity of the high-resistance monocrystalline silicon is greater than 10Ω·cm.
Preferably, the second substrate is made of low-resistance monocrystalline silicon, and the resistivity of the low-resistance monocrystalline silicon is smaller than 0.01Ω·cm.
The invention discloses a preparation method of an MEMS electronic cigarette heating chip integrated with a Pt film resistor temperature sensor, which comprises the following steps:
preparation of the first substrate 1-1:
(1) Photoetching the front surface of a glass sheet or a high-resistance monocrystalline silicon wafer with resistivity larger than 10Ω & cm to form a microcavity pattern, and corroding the microcavity pattern into a microcavity 2 by adopting an etching solution;
(2) Photoetching the back surface of the glass sheet or the high-resistance monocrystalline silicon piece in the step (1), and corroding a micro-through hole 3 penetrating through the glass sheet or the high-resistance monocrystalline silicon piece by adopting an corroding solution; obtaining the first substrate 1-1;
preparation of the second substrate 1-2:
(a) Forming a micro-channel array pattern on the back side of a silicon wafer with low resistivity, wherein the resistivity of the silicon wafer is less than 0.01Ω & cm;
(b) Etching the back surface of the low-resistivity silicon wafer in the step (a) by adopting a deep reactive ion etching process to form a micro-channel array 4;
(c) Depositing a layer of silicon nitride on the front side of the low-resistivity silicon wafer in the step (b) by adopting a low-pressure chemical vapor deposition process;
(d) Photoetching the front surface of the low-resistivity silicon wafer in the step (c), and removing the silicon nitride layer exposed at the middle part by adopting a reactive ion etching process;
(e) Etching the front surface of the low-resistivity silicon wafer obtained in the step (d) by adopting an electrochemical etching process to form a porous structure 5, so that the porous structure is communicated with the micro-channel array on the back surface;
(f) Photoetching the front surface of the low-resistivity silicon wafer obtained in the step (e), sputtering a Pt metal film, and manufacturing a Pt film resistance temperature sensor 7 through a stripping process;
(g) Removing the residual silicon nitride on the front side of the low-resistivity silicon wafer in the step (e) by adopting a reactive ion etching process, sputtering a metal film, and manufacturing a metal bonding pad 6 by adopting a stripping process to obtain the second substrate 1-2;
preparation of MEMS electronic cigarette heating chip integrating Pt film resistance temperature sensor:
(a) closely contacting the front surface of the first substrate 1-1 with the back surface of the second substrate 1-2, and bonding them together by a bonding process;
and (II) scribing the chip obtained in the step (A) by using a scribing machine, and obtaining the MEMS electronic cigarette chip.
Preferably, the etching solution in the step (1) or (2), wherein the etching solution of the glass sheet is a hydrofluoric acid solution, and the etching solution of the high-resistance monocrystalline silicon wafer is one of a potassium hydroxide solution or a tetramethylammonium hydroxide solution.
Preferably, the metal film material sputtered in the step (g) is one or more of Ti/Pt/Au, tiW/Au, al, cr or Pt/Au.
The beneficial results of the invention are:
(1) The temperature of the heating chip of the electronic cigarette is measured in real time by adopting the integrated platinum resistance temperature sensor, the temperature measurement is accurate, the service life of the sensor is long, the operation is reliable, and the problems that the temperature measurement resistance is continuously changed due to inaccurate temperature measurement and aging of the heating element of the traditional electronic cigarette are effectively avoided; meanwhile, the temperature can be adjusted according to the requirements of users, so that the atomization amount is changed.
(2) The MEMS electronic cigarette heating chip integrating the Pt film resistor temperature sensor is simple in manufacturing flow and standard in process, and is suitable for mass production.
Drawings
FIG. 1 is a side cross-sectional view of a MEMS e-cigarette heat generating chip of the integrated Pt thin film resistance temperature sensor of the present invention;
FIG. 2 is a side cross-sectional view of a first substrate of the present invention;
FIG. 3 is a side cross-sectional view of a second substrate;
FIG. 4 is a top plan view of a second substrate front side;
fig. 5 is a top view of the backside of the second substrate.
The reference numerals are: 1-1, a first substrate; 2. a microcavity; 3. a micro-via; 4. a micro flow channel array; 5. a porous structure; 6. a metal pad; 7. a Pt thin film resistance temperature sensor; 8. silicon nitride layer
Detailed Description
The invention relates to an MEMS electronic cigarette heating chip integrated with a Pt film resistor temperature sensor, which comprises the following components:
the first substrate 1-1 is in a disc shape, and the front surface of the first substrate is provided with a concave microcavity 2; the microcavity 2 is internally provided with a micro through hole 3 penetrating through the first substrate 1-1;
the second substrate 1-2 is in a disc shape, the back surface of the second substrate is provided with a micro-channel array 4 perpendicular to the back surface of the second substrate, the center area of the front surface of the second substrate is provided with a porous structure 5 perpendicular to the front surface of the second substrate, and the micro-channel array 4 is communicated with the porous structure 5; the front edge of the metal pad is provided with a metal bonding pad 6; the center of the front surface of the device is provided with a Pt film resistor temperature sensor 7;
the front surface of the first substrate 1-1 and the back surface of the second substrate 1-2 are bonded together.
The depth of the microcavity 2 is selected to be 3 mm; the diameter of the micro-vias 3 is chosen to be 750 microns.
The front surface of the second substrate 1-2 is provided with a metal film, and the thickness of the metal film is 300nm; the material of the metal film is Ti/Pt/Au.
The diameter of the micro flow channel array 4 is selected to be 30 micrometers, and the depth of the micro flow channel is selected to be 1/2 of the height of the second substrate 1-2.
The pore size of the porous structure 5 is selected to be 500 nm.
The first substrate is made of high-resistance monocrystalline silicon, and the resistivity of the high-resistance monocrystalline silicon is 20 ohm cm.
The second substrate is made of low-resistance monocrystalline silicon, and the resistivity of the low-resistance monocrystalline silicon is selected to be 0.005 Ω & cm.
The invention discloses a preparation method of an MEMS electronic cigarette heating chip integrated with a Pt film resistor temperature sensor, which comprises the following steps:
preparation of the first substrate 1-1:
(1) Photoetching the front surface of a high-resistance monocrystalline silicon wafer with the resistivity of 20 omega cm to form a microcavity pattern, and corroding the microcavity 2 by adopting a potassium hydroxide solution as an corroding solution;
(2) Photoetching the back surface of the high-resistance monocrystalline silicon wafer in the step (1), and corroding a micro-through hole 3 penetrating through the high-resistance monocrystalline silicon wafer by adopting a potassium hydroxide solution as an corroding solution; obtaining the first substrate 1-1;
preparation of the second substrate 1-2:
(a) Photoetching the back surface of a silicon wafer with low resistivity of 0.005 omega cm to form a micro-channel array pattern;
(b) Etching the back surface of the low-resistivity silicon wafer in the step (a) by adopting a deep reactive ion etching process to form a micro-channel array 4;
(c) Depositing a layer of silicon nitride on the front surface of the low-resistivity silicon wafer in the step (b) by adopting a low-pressure chemical vapor deposition process;
(d) Photoetching the front surface of the low-resistivity silicon wafer in the step (c), and removing the silicon nitride layer with the exposed middle part by adopting a reactive ion etching process;
(e) Etching the front surface of the low-resistivity silicon wafer obtained in the step (d) by adopting an electrochemical etching process to form a porous structure (5), so that the porous structure is communicated with the micro-channel array on the back surface;
(f) Carrying out photoetching on the front surface of the low-resistivity silicon wafer obtained in the step (e), sputtering a Pt metal film, and manufacturing a Pt film resistance temperature sensor 7 through a stripping process;
(g) Removing the residual silicon nitride on the front surface of the low-resistivity silicon wafer in the step (e) by adopting a reactive ion etching process, sputtering a metal film material which is Ti/Pt/Au, and manufacturing a metal bonding pad 6 by adopting a stripping process, namely the second substrate 1-2;
preparation of MEMS electronic cigarette heating chip integrating Pt film resistance temperature sensor:
(a) bringing the front surface of the first substrate (1-1) into close contact with the back surface of the second substrate 1-2, and bonding them together by a bonding process;
and (II) scribing the chip obtained in the step (A) by using a scribing machine, and obtaining the MEMS electronic cigarette chip with uniform heating.
Claims (8)
1. An integrated Pt thin film resistance temperature sensor's MEMS e-cigarette chip that generates heat, characterized in that includes:
a first substrate (1-1) which is sheet-shaped and has a concave microcavity (2) on the front surface thereof; a micro through hole (3) penetrating through the first substrate (1-1) is formed in the micro cavity (2); the first substrate is made of glass or high-resistance monocrystalline silicon, and the resistivity of the high-resistance monocrystalline silicon is more than 10Ω & cm;
the second substrate (1-2) is in a sheet shape, the back surface of the second substrate is provided with a micro-channel array (4) perpendicular to the back surface of the second substrate, the center area of the front surface of the second substrate is provided with a porous structure (5) perpendicular to the front surface of the second substrate, and the micro-channel array (4) is communicated with the porous structure (5); the front edge of the metal wire is provided with a metal bonding pad (6); the front surface of the device is provided with a Pt film resistor temperature sensor (7); the second substrate is made of low-resistance monocrystalline silicon, and the resistivity of the low-resistance monocrystalline silicon is smaller than 0.01Ω & cm;
the front side of the first substrate (1-1) is bonded to the back side of the second substrate (1-2).
2. The MEMS e-cigarette heat generating chip of claim 1 integrated with a Pt thin film resistance temperature sensor, wherein the microcavity (2) has a depth of 1 mm to 5 mm; the diameter of the micro through holes (3) is 500 micrometers to 1 millimeter.
3. The MEMS e-cigarette heating chip of the integrated Pt thin film resistor temperature sensor of claim 1, wherein the front side of the second substrate (1-2) has a metal thin film with a thickness of 200-500 nm; the metal film is made of one or more of Ti/Pt/Au, tiW/Au, al, cr or Pt/Au.
4. The MEMS e-cigarette heat generating chip of claim 1 integrated with a Pt thin film resistor temperature sensor, wherein the diameter of the micro flow channels of the micro flow channel array (4) is 10-500 microns, and the depth of the micro flow channels is 1/2-3/4 of the height of the second substrate (1-2).
5. The MEMS e-cigarette heat generating chip of claim 1 integrated with a Pt thin film resistance temperature sensor, wherein the pore size of the porous structure (5) is 100 nm to 1000 nm.
6. The preparation method of the MEMS electronic cigarette heating chip integrated with the Pt film resistor temperature sensor is characterized by comprising the following steps of:
preparation of the first substrate (1-1):
(1) Photoetching the front surface of a glass sheet or a high-resistance monocrystalline silicon wafer with resistivity larger than 10Ω & cm to form a microcavity pattern, and then corroding the microcavity pattern into a microcavity (2) by adopting an etching solution;
(2) Photoetching the back surface of the glass sheet or the high-resistance monocrystalline silicon piece in the step (1), and then corroding micro through holes (3) penetrating through the glass sheet or the high-resistance monocrystalline silicon piece by adopting an corroding solution; obtaining said first substrate (1-1);
preparation of the second substrate (1-2):
(a) Forming a micro-channel array pattern on the back side of a silicon wafer with low resistivity, wherein the resistivity of the silicon wafer is less than 0.01Ω & cm;
(b) Etching the back surface of the low-resistivity silicon wafer in the step (a) by adopting a deep reactive ion etching process to form a micro-channel array (4);
(c) Depositing a layer of silicon nitride on the front side of the low-resistivity silicon wafer obtained in the step (b) by adopting a low-pressure chemical vapor deposition process;
(d) Photoetching the front surface of the low-resistivity silicon wafer obtained in the step (c), and removing the silicon nitride layer exposed at the middle part by adopting a reactive ion etching process;
(e) Etching the front surface of the low-resistivity silicon wafer obtained in the step (d) by adopting an electrochemical etching process to form a porous structure (5), so that the porous structure is communicated with the micro-channel array on the back surface;
(f) Photoetching the front surface of the low-resistivity silicon wafer obtained in the step (e), sputtering a Pt metal film, and manufacturing a Pt film resistance temperature sensor (7) through a stripping process;
(g) Removing the residual silicon nitride on the front side of the low-resistivity silicon wafer in the step (e) by adopting a reactive ion etching process, sputtering a metal film, and manufacturing a metal bonding pad (6) by adopting a stripping process to obtain the second substrate (1-2);
preparation of MEMS electronic cigarette heating chip integrating Pt film resistance temperature sensor:
(a) closely contacting the front surface of the first substrate (1-1) with the back surface of the second substrate (1-2), and bonding the substrates together by a bonding process;
and (II) scribing the chip obtained in the step (A) by using a scribing machine, and obtaining the MEMS electronic cigarette chip.
7. The method according to claim 6, wherein the etching solution in the step (1) or (2) is a hydrofluoric acid solution, and the etching solution for the high-resistance monocrystalline silicon wafer is one of a potassium hydroxide solution and a tetramethylammonium hydroxide solution.
8. The method of claim 6, wherein the metal thin film material sputtered in step (g) is one or more of Ti/Pt/Au, tiW/Au, al, cr or Pt/Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810004078.9A CN108354228B (en) | 2018-01-03 | 2018-01-03 | MEMS heating chip integrated with Pt temperature sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810004078.9A CN108354228B (en) | 2018-01-03 | 2018-01-03 | MEMS heating chip integrated with Pt temperature sensor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108354228A CN108354228A (en) | 2018-08-03 |
| CN108354228B true CN108354228B (en) | 2023-07-25 |
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| CN110954244B (en) * | 2018-09-27 | 2021-05-11 | 中国科学院微电子研究所 | Temperature measuring device |
| CN109770438B (en) * | 2019-03-25 | 2023-07-25 | 云南中烟工业有限责任公司 | Film-coated silicon-based electronic cigarette atomization chip and preparation method thereof |
| CN113662250B (en) * | 2021-09-02 | 2024-07-05 | 美满芯盛(杭州)微电子有限公司 | MEMS silicon-based atomization core and manufacturing method thereof |
| CN113876041A (en) * | 2021-09-22 | 2022-01-04 | 深圳市克莱鹏科技有限公司 | Heating sheet and electronic cigarette |
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