TWI757314B - Substrate holding device, method for manufacturing such a device, and apparatus and method for processing or imaging a sample - Google Patents

Substrate holding device, method for manufacturing such a device, and apparatus and method for processing or imaging a sample Download PDF

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TWI757314B
TWI757314B TW106125097A TW106125097A TWI757314B TW I757314 B TWI757314 B TW I757314B TW 106125097 A TW106125097 A TW 106125097A TW 106125097 A TW106125097 A TW 106125097A TW I757314 B TWI757314 B TW I757314B
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substrate
base plate
plate
array
droplets
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TW106125097A
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TW201812429A (en
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保羅 依潔梅爾特 史佛爾斯
傑瑞 約翰尼斯 馬汀納斯 佩斯特
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荷蘭商Ａｓｍｌ荷蘭公司
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Priority claimed from US15/222,705 external-priority patent/US9829804B1/en
Priority claimed from US15/222,708 external-priority patent/US20180033586A1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electron Beam Exposure (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

The invention relates to a substrate holding device comprising a holding plate, a base plate, an array of supports, and an array of droplets of a heat absorbing material. The holding plate comprises a first side for holding a substrate. The base plate is arranged at a distance from the holding plate and provides a gap between the base plate and the holding plate at a side of the holding plate opposite to the first side. The array of supports is arranged in between the holding plate and the base plate. The array of liquid and/or solid droplets is arranged in between the holding plate and the base plate, and the droplets are arranged to contact both the base plate and the holding plate. The droplets are arranged spaced apart from each other and from the supports, and are arranged adjacent to each other in a direction along the gap.

Description

基板夾持裝置、用於製造此裝置之方法及用於處理或將樣本成像之儀器及方法 Substrate holding device, method for making the same, and apparatus and method for processing or imaging a sample

本發明係關於例如用於在微影術系統中使用之基板夾持裝置。本發明進一步係關於用於製造此基板夾持裝置之方法，且係關於此基板夾持裝置在微影術系統中之使用。本發明進一步係關於用於使樣本曝光，特定而言用於處理或將樣本成像之儀器，更特定而言微影術儀器。本發明進一步係關於用於處理或將樣本成像之方法。 The present invention relates to substrate holding devices, eg for use in lithography systems. The invention further relates to a method for manufacturing such a substrate holding device and to the use of this substrate holding device in a lithography system. The invention further relates to an apparatus for exposing a sample, in particular for processing or imaging a sample, more particularly a lithography apparatus. The present invention further relates to a method for processing or imaging a sample.

在微影術系統中，例如，光子或諸如離子或電子之帶電粒子用於照射且圖案化諸如矽晶圓之基板之表面。由於此類光子或帶電粒子之能量負載，基板經至少局部地加熱。尤其在諸如多束帶電粒子微影術系統之帶電粒子微影術系統中，帶電粒子之撞擊可引起基板之顯著加熱，尤其結合帶電粒子在基板上之局部撞擊。 In lithography systems, for example, photons or charged particles such as ions or electrons are used to illuminate and pattern the surface of a substrate such as a silicon wafer. Due to the energy load of such photons or charged particles, the substrate is heated at least locally. Especially in charged particle lithography systems such as multi-beam charged particle lithography systems, the impact of charged particles can cause significant heating of the substrate, especially in conjunction with localized impact of charged particles on the substrate.

已提議各種基板夾持裝置，該等基板夾持裝置抑制基板之溫度上升，且藉此使曝光基板之溫度穩定。 Various substrate holding devices have been proposed which suppress the temperature rise of the substrate and thereby stabilize the temperature of the exposed substrate.

許多此等夾持裝置依賴基板與冷卻劑之熱接觸，該冷卻劑經配置以流過基板夾持裝置。此裝置之一實例揭示於US 5,685,363中，該專利 描述包含將要曝光的晶圓或靶下方的熱吸收流體腔室的基板夾持裝置。此已知基板夾持裝置包含藉由撓性薄片覆蓋的熱吸收流體。在使用中，基板藉由基板保持器按壓抵靠薄片，藉此薄片及因此熱吸收流體進入與將要在溫度上穩定的基板之後面密切熱接觸中。 Many of these clamping devices rely on thermal contact of the substrate with a coolant configured to flow through the substrate clamping device. An example of such a device is disclosed in US 5,685,363, which A substrate holding apparatus containing a chamber of heat absorbing fluid below the wafer or target to be exposed is described. This known substrate holding device contains a heat absorbing fluid covered by a flexible sheet. In use, the substrate is pressed against the sheet by the substrate holder, whereby the sheet, and thus the heat absorbing fluid, comes into intimate thermal contact with the backside of the substrate to be temperature stable.

在諸如在帶電粒子束微影術系統中，基板僅局部地加熱的情況下，當熱吸收流體實際上沿基板的整個後面在下方延伸時，此已知設計中之熱吸收流體之層除充當熱吸收劑之外，充當且形成熱緩衝器。 In cases where the substrate is heated only locally, such as in charged particle beam lithography systems, the layer of heat absorbing fluid in this known design acts in addition to acting as the heat absorbing fluid extends underneath substantially along the entire back of the substrate. In addition to the heat absorber, acts as and forms a heat buffer.

另外，如US 5,685,363中揭示的溫度穩定裝置包含包括在穩定基底中的熱吸收流體通道或冷卻劑通道，熱吸收流體流過該熱吸收流體通道或冷卻劑通道，以便冷卻基板夾持裝置，且輸送熱離開基板夾持裝置。此允許使熱吸收腔室下方的基板夾持裝置之溫度穩定且提供對溫度之較好控制，基板夾持裝置及靶將在該溫度穩定。 In addition, the temperature stabilization device as disclosed in US 5,685,363 comprises a heat absorbing fluid channel or coolant channel included in the stabilization base through which the heat absorbing fluid flows to cool the substrate holding device, and The transport heat leaves the substrate holder. This allows and provides better control of the temperature of the substrate holder below the heat absorption chamber, at which the substrate holder and target will stabilize.

在通常適應於真空環境中的微影曝光系統中，此類冷卻劑通道並非較佳的。一原因在於相關聯冷卻劑導管直接地或經由磁滯妨礙或干擾基板之精確定位。 Such coolant channels are not preferred in lithographic exposure systems that are typically adapted in vacuum environments. One reason is that the associated coolant conduits hinder or interfere with precise positioning of the substrate, either directly or via hysteresis.

在微影術領域內，專利公告US 2005/0128449教導相變材料(所謂的PCM)可促進熱之移除。PCM可在自固體至液體的相變期間將大量能量儲存為潛熱。有利地，可在相對恆定的溫度處儲存大量熱能。因此，PCM之使用可藉由在不顯著地改變溫度的情況下儲存大量熱能來提供溫度穩定化。PCM材料可在無冷卻劑導管的情況下施加，同時仍安全地控制靶或基板及基板夾持裝置將要經穩定所在的溫度。指示來用於實現此熱儲存及使系統穩定的材料包括石蠟及Rubithermtm PX。PCM可經提供為PCM粉 末或為黏結PCM。 In the field of lithography, patent publication US 2005/0128449 teaches that phase change materials (so-called PCMs) can facilitate heat removal. PCMs can store large amounts of energy as latent heat during the phase transition from solid to liquid. Advantageously, a large amount of thermal energy can be stored at a relatively constant temperature. Thus, the use of PCM can provide temperature stabilization by storing large amounts of thermal energy without significantly changing the temperature. The PCM material can be applied without coolant conduits while still safely controlling the temperature at which the target or substrate and substrate holding device will be stabilized. Materials indicated to achieve this thermal storage and to stabilize the system include paraffin and Rubitherm tm PX. The PCM can be provided as a PCM powder or as a bonded PCM.

組合式熱儲存及溫度控制之此方式基於利用材料在恆定溫度處之相變的通常已知原理。在應用此原理中，如可進一步自其中由Mohamed M.Farid等人之「A review of on phase change energy storage：materials and applications」(Energy Conversion and Management 45,2004)的大量文獻已知的，適合的材料可通常自手冊選擇。為在所要溫度處提供大量熱能之儲存，熟悉此項技術者將尋找在所要溫度處擁有相對高的轉變熱或潛熱的材料，在穩定化之溫度的狀況下。一此手冊為「Handbook of chemistry & Physics」，其基於US Atomic Energy Commission,Report ANL-5750由公開的研究列表「thermodynamic properties of the elements」。大量PCM中之某些材料之流行性之指示性為在藉由Costa等人之「Numerical simulation of solid-liquid phase change phenomena」，1991中的石蠟(正十八烷)、鎵及錫之選擇以用於驗證PCM行為之數值模擬。 This approach to combined thermal storage and temperature control is based on the generally known principle of exploiting the phase transition of a material at a constant temperature. In applying this principle, as may be further known from the extensive literature in which it is known from "A review of on phase change energy storage: materials and applications" by Mohamed M. Farid et al. (Energy Conversion and Management 45, 2004), suitable The material can usually be selected from the manual. In order to provide a large amount of thermal energy storage at the desired temperature, one skilled in the art will look for materials that possess a relatively high heat of transition or latent heat at the desired temperature, under conditions of stabilizing temperatures. One such handbook is "Handbook of chemistry & Physics", which is based on the published research list "thermodynamic properties of the elements" by the US Atomic Energy Commission, Report ANL-5750. Indicative of the prevalence of certain materials in bulk PCMs is the selection of paraffin (n-octadecane), gallium and tin by Costa et al., "Numerical simulation of solid-liquid phase change phenomena", 1991. Numerical simulation to verify PCM behavior.

專利公告US 2008/0024743以申請人之名義提供展示此已知溫度穩定化系統的微影靶曝光系統之實例，其中冷卻劑導管藉由以例如十六烷之形式的PCM之應用省略。十六烷出於以下原因經選擇：其相變溫度匹配用於在半導體製造中使用的冷卻劑流體之典型溫度範圍之上端，藉此防止基板熱緩衝器之溫度自工業微影術系統之其他、通常液體冷卻部分偏離至不合需要的程度。在此方面，十六烷之PCM溫度可自藉由Himran及Suwono之「characterization of Alkanes and Paraffin Waxes for application as Phase Change Energy Storage Medium」(Energy sources，第16卷，1994)例如看作為約291 K，而製造廠冷卻劑液體可自藉由Chen,Gautam及Weig之「Bringing energy efficiency to the fab」(McKinsey on semiconductors，2013年秋)看作為在自286 K至291 K(55 F至65 F)之範圍內。 Patent publication US 2008/0024743 in the name of the applicant provides an example of a lithography target exposure system showing this known temperature stabilization system, wherein the coolant conduit is omitted by the application of PCM in the form of eg hexadecane. Hexadecane was chosen for its phase transition temperature to match the upper end of the typical temperature range for coolant fluids used in semiconductor manufacturing, thereby preventing the temperature of the substrate thermal buffer from changing from other industrial lithography systems. , Usually the liquid cooling part deviates to an undesired degree. In this regard, the PCM temperature of hexadecane can be seen, for example, as about 291 K by "characterization of Alkanes and Paraffin Waxes for application as Phase Change Energy Storage Medium" by Himran and Suwono (Energy sources, Vol. 16, 1994) , and the factory coolant liquid can be freely obtained by Chen, Gautam and Weig's "Bringing energy efficiency to the fab" (McKinsey on semiconductors, Fall 2013) is seen to be in the range from 286 K to 291 K (55 F to 65 F).

雖然十六烷具有匹配工業操作溫度，至少工業冷卻劑溫度之相變溫度之優點，但是在實踐中其看起來由於不良熱傳導性而遭受不良效能，而不管用來改良靶與如在此已知的、基於PCM之基板溫度穩定化系統中教導的PCM之間的熱傳導性的措施之使用。 While hexadecane has the advantage of matching the phase transition temperature of industrial operating temperatures, at least industrial coolant temperatures, in practice it appears to suffer from poor performance due to poor thermal conductivity, regardless of whether it is used to improve the target and as known herein The use of measures of thermal conductivity between PCMs taught in the PCM-based substrate temperature stabilization system.

此外，US 7,528,349揭示包含設置成處於與基板熱接觸中的熱吸收材料的溫度穩定化系統。熱吸收材料之特徵在於在用於處理基板之材料之所要溫度範圍中的固體-液體相轉變溫度。根據US 7,528,349，熱吸收材料可經提供為設置在載體之頂部上的平坦層，可經設置以充滿載體之表面中之一或多個凹陷，或可藉由使凹部充滿熱吸收材料嵌入載體中。熱吸收材料配置成處於與基板或與適合的熱傳導層直接接觸中，該適合的熱傳導層處於與兩個基板充分熱接觸中。在諸如在帶電粒子束微影術系統中，基板經僅局部地加熱的情況下，所得熱藉由熱吸收材料局部地吸收。由於熱吸收，熱吸收材料將大體上在帶電粒子束衝擊基板所在的位置處至少部分地經歷相轉變。此局部相轉變導致熱吸收材料之局部膨脹或收縮。此等局部膨脹或收縮產生基板之不希望的扭曲或變形，此使US 7,528,349之溫度穩定系統不適合於高解析度帶電粒子微影術。 Furthermore, US 7,528,349 discloses a temperature stabilization system comprising a heat absorbing material disposed in thermal contact with a substrate. Heat absorbing materials are characterized by solid-liquid phase transition temperatures in the desired temperature range of the material used to process the substrate. According to US 7,528,349, the heat absorbing material may be provided as a flat layer disposed on top of the carrier, may be disposed to fill one or more depressions in the surface of the carrier, or may be embedded in the carrier by filling the depressions with the heat absorbing material . The heat absorbing material is configured to be in direct contact with the substrates or with a suitable thermally conductive layer that is in sufficient thermal contact with both substrates. In cases where the substrate is heated only locally, such as in charged particle beam lithography systems, the resulting heat is locally absorbed by the heat absorbing material. Due to heat absorption, the heat absorbing material will undergo a phase transition at least partially generally at the location where the charged particle beam impinges on the substrate. This localized phase transition results in localized expansion or contraction of the heat absorbing material. These localized expansions or contractions produce undesired distortions or deformations of the substrate, making the temperature stabilization system of US 7,528,349 unsuitable for high resolution charged particle lithography.

本發明因此力圖提供系統、儀器及/或方法，該系統、儀器及/或方法藉由使用良好熱傳導的，通常金屬相變材料來提供用於系統、儀器及/或基板夾持裝置之精確溫度控制之構件，同時仍匹配冷卻劑液體之半導體標準範圍內的溫度。標準金屬材料具有遠離此所要的操作範圍的相變 溫度。具有303 K之轉變溫度的鎵最接近於用於在半導體製造中使用的冷卻劑液體之溫度範圍，但仍偏離12度。其他類金屬材料可選自基於金屬之化合物材料。在此類液體金屬材料可展現類鎵物質行為的情況下，本發明進一步力圖在PCM穩定式基板支撐件作為此液體金屬化合物及基板溫度穩定劑之收容器之組合功能中最佳化PCM穩定式基板支撐件，藉此提供此溫度穩定基板支撐件之新設計。 The present invention therefore seeks to provide systems, apparatus and/or methods for providing accurate temperatures for systems, apparatus and/or substrate holding devices by using well thermally conductive, typically metallic phase change materials Control components while still matching the temperature of the coolant liquid within the semiconductor standard range. Standard metallic materials have phase transitions far from this desired operating range temperature. Gallium, with a transition temperature of 303 K, is closest to the temperature range for coolant liquids used in semiconductor manufacturing, but is still 12 degrees away. Other metalloid materials can be selected from metal-based compound materials. Where such liquid metal materials can exhibit gallium-like species behavior, the present invention further seeks to optimize the PCM-stabilized substrate support in the combined function of the PCM-stabilized substrate support as a receptacle for the liquid metal compound and substrate temperature stabilizer A substrate support, thereby providing a new design for this temperature stable substrate support.

同樣地，雖然根據US 2008/0024743之基板夾持裝置提供用於將基板維持在大體上恆定溫度處的基板夾持裝置之頂部上的極緊湊及精密方式，但其亦經證明難以製造此基板夾持裝置且/或獲得具有適合於在微影術系統中使用的高度精確及可再見尺寸的載體或熱傳導框架。 Likewise, while the substrate clamping device according to US 2008/0024743 provides an extremely compact and precise way on top of the substrate clamping device for maintaining the substrate at a substantially constant temperature, it has also proven difficult to manufacture such a substrate Hold the device and/or obtain a carrier or thermally conductive frame with highly accurate and visible dimensions suitable for use in a lithography system.

另外或替代地，本發明之目標將提供適於、至少處理諸如各種鎵化合物中之任何鎵化合物的類金屬相變材料之特定性質的設計。在實踐中看來，此等材料傾向於表明在冰及水自固體至液體之轉變中的類冰及水行為，因為固體形式中之體積通常可大於在液體形式中，從而由於夾持裝置之上層與包括在下文的相變材料之間的直接接觸之至少潛在損失而引起不良熱傳導性。 Additionally or alternatively, it is an object of the present invention to provide designs suitable for, at least processing, the specific properties of metalloid phase change materials such as any of the various gallium compounds. In practice, these materials tend to exhibit ice- and water-like behavior in the solid-to-liquid transition of ice and water, since the volume in the solid form can generally be greater than in the liquid form, thus due to the tightness of the gripping device. Poor thermal conductivity is caused by at least potential loss of direct contact between the upper layer and the phase change material included below.

另外或替代地，本發明之目標將提供用於該裝置之曝光方法及儀器，該曝光方法及儀器提供基板之精確溫度控制，尤其在用於使電磁輻射或顆粒投影至該基板上的曝光單元配置在該基板之緊密附近處使得曝光單元可熱影響基板的儀器中。 Additionally or alternatively, it is an object of the present invention to provide an exposure method and apparatus for the device which provides precise temperature control of a substrate, especially in an exposure unit for projecting electromagnetic radiation or particles onto the substrate In an apparatus that is arranged in close proximity to the substrate so that the exposure unit can thermally affect the substrate.

另外或替代地，本發明之目標將提供基板夾持裝置，該基板夾持裝置至少部分地避免先前技術之基板夾持裝置之以上提到的缺點中至 少一個。 Additionally or alternatively, it is an object of the present invention to provide a substrate holding device which at least partially avoids the above mentioned disadvantages of prior art substrate holding devices to missing one.

根據一第一態樣，本發明提供一種基板夾持裝置，該基板夾持裝置包含：夾持板，其中該夾持板包含用於夾持基板之第一側，基底板，其配置在距該夾持板一距離處且在該夾持板之背離該第一側的第二側處提供該基底板與該夾持板之間的間隙，一陣列支撐件，該等支撐件至少配置在該夾持板與該基底板之間，及熱吸收材料之一陣列小滴，該等小滴配置在該夾持板與該基底板之間的該間隙中，其中該等小滴經配置成與該等支撐件間隔分開且與該陣列小滴中之其他小滴間隔分開，且其中該等小滴經配置以接觸該基底板及該夾持板兩者。 According to a first aspect, the present invention provides a substrate clamping device, the substrate clamping device includes: a clamping plate, wherein the clamping plate includes a first side for clamping the substrate, and a base plate disposed at a distance from A gap between the base plate and the clamping plate is provided at a distance from the clamping plate and at a second side of the clamping plate facing away from the first side, an array of supports arranged at least in Between the clamping plate and the base plate, and an array of droplets of heat absorbing material, the droplets are arranged in the gap between the clamping plate and the base plate, wherein the droplets are arranged to Spaced apart from the supports and spaced apart from other droplets in the array of droplets, and wherein the droplets are configured to contact both the base plate and the clamping plate.

該基底板與該夾持板之間的該支撐件陣列界定該基底板與該夾持板之間的該間隙之寬度，且提供具有高度精確及可再現的尺寸之框架。用於以適於成功的、至少最佳熱傳導之方式容納相變材料之小滴，至少用於成功的溫度穩定的熱緩衝的此新穎設計靈活地利用，在使液體材料之一部分採用球或小滴形狀的表面張力及內聚力的狀況下，至少使容器設計適於材料性質。因此，本發明之基板夾持裝置經配置以接收且容納相變材料之小滴，尤其與支撐件且與該陣列小滴中之其他小滴間隔分開的小滴，而非充滿PCM容器，亦即，經配置來用於將PCM容納在如例如US 7,528,349中所描述之夾持裝置中的空腔。夾持器較佳地具備各自適於容納PCM之小滴的多個良好散佈的、相對小及/或淺的壓痕或空腔。 The array of supports between the base plate and the clamp plate defines the width of the gap between the base plate and the clamp plate and provides a frame with highly accurate and reproducible dimensions. This novel design for containing droplets of phase change material in a manner suitable for successful, at least optimal thermal conduction, at least for successful temperature-stabilized thermal buffering, flexibly utilizes the use of spheres or small At least the container design is adapted to the material properties, given the surface tension and cohesion of the droplet shape. Accordingly, the substrate clamping device of the present invention is configured to receive and contain droplets of phase change material, especially droplets spaced from the support and from other droplets in the array of droplets, rather than filling the PCM container, and also That is, a cavity configured for receiving a PCM in a clamping device as described, for example, in US 7,528,349. The holder is preferably provided with a plurality of well-dispersed, relatively small and/or shallow indentations or cavities each adapted to accommodate droplets of PCM.

該等小滴經配置成與支撐件且與該陣列小滴中之其他小滴間隔分開，以致能該等小滴至少在沿該基底板與該夾持板之間的該間隙之方向上之膨脹。該陣列小滴中之小滴經配置為具有充分的側向空間，使得小滴至少在沿夾持板與基底板之間的間隙之方向上側向地自由站立。根據此實施例之基板夾持裝置可更容易製造，因為小滴之位置或定位不干擾支撐件之位置或定位。 The droplets are configured to be spaced apart from the support and from other droplets in the array of droplets, so that the droplets can be spaced at least in the direction of the gap between the base plate and the clamping plate swell. The droplets in the array of droplets are configured with sufficient lateral space such that the droplets are free standing laterally at least in the direction of the gap between the clamping plate and the base plate. The substrate clamping device according to this embodiment can be easier to manufacture because the position or positioning of the droplets does not interfere with the position or positioning of the support.

較佳地，PCM展現相較於與夾持板及/或基底板之面對間隙的表面之黏合的更大內聚力。此使得能夠容納在間隙內，尤其在該間隙之壓痕或空腔中平坦化的PCM小滴，使得平坦化的小滴可根據情況縮小或膨脹，同時維持與夾持板及基底板之最佳接觸，且同時將所要功能提供為溫度穩定基板夾持裝置。後者功能尤其在無如以上所描述之解決方案中之缺點的情況下經實現。 Preferably, the PCM exhibits greater cohesion than adhesion to the gap facing surfaces of the clamping plate and/or the base plate. This enables flattened PCM droplets to be accommodated within the gap, especially in the indentations or cavities of the gap, so that the flattened droplets can shrink or expand as appropriate, while maintaining the closest relationship to the clamping plate and base plate. Optimum contact and at the same time provide the desired function as a temperature stable substrate holding device. The latter function is realized especially without the disadvantages as in the solutions described above.

此外，處於液相、固相或液相及固相之組合中的該陣列小滴經配置以橋接夾持板與基底板之間的間隙。因此，小滴處於與夾持板及基底板兩者接觸中。此尤其可藉由單獨小滴之體積及/或基底板與夾持板之間的間隙之寬度之適當選擇加以配置。夾持板與小滴之間的接觸一方面提供自夾持板至熱吸收材料之小滴的適當熱傳導，且基底板與小滴之間的接觸另一方面提供自基底板至熱吸收材料之小滴的適當熱傳導。 Furthermore, the array of droplets in liquid phase, solid phase, or a combination of liquid and solid phases are configured to bridge the gap between the clamping plate and the base plate. Thus, the droplet is in contact with both the clamping plate and the base plate. This can be configured in particular by suitable selection of the volume of the individual droplets and/or the width of the gap between the base plate and the clamping plate. The contact between the clamping plate and the droplets provides, on the one hand, adequate heat conduction from the clamping plate to the droplets of heat absorbing material, and the contact between the base plate and the droplets, on the other hand, provides a connection from the base plate to the heat absorbing material. Proper thermal conduction of the droplets.

當基底板與夾持板之間的整個間隙將充滿熱吸收材料時，歸因於熱吸收的熱吸收材料之任何膨脹或收縮將導致熱吸收材料中之壓力之增加或降低，此狀況可導致基板夾持裝置之尺寸之改變及/或夾持板之變形。此問題已在專利公開案US 2014/0017613中經識別，且US 2014/0017613 聲明，考慮到膨脹，合意的是提前使處於熱I不吸收的狀態中的熱儲存結構之外部尺寸比夾持單元之內徑小。然而，使熱儲存結構小於夾持單元之內徑具有值得注意的缺點：熱儲存結構未配置成處於與基板直接接觸中，如US 2014/0017613中所示。額外構件需要經提供來將產生於基板中之熱移動至熱儲存結構。US 2014/0017613教導使用液體，諸如水，該液體完全地充滿基板與基底之間的間隙。本發明藉由使用熱吸收材料之一陣列小滴提供對此問題的完全不同解決方案，該陣列小滴經配置成與支撐件且與該陣列小滴中之其他小滴間隔分開，且其中該等小滴經配置以接觸基底板及夾持板，較佳地其中該等小滴經擠壓、楔入或保留在基底板與夾持板之間。 When the entire gap between the base plate and the clamping plate will be filled with heat absorbing material, any expansion or contraction of the heat absorbing material due to heat absorption will result in an increase or decrease in pressure in the heat absorbing material, a condition that can result in Changes in the dimensions of the substrate holding device and/or deformation of the holding plate. This problem has been identified in patent publication US 2014/0017613 and US 2014/0017613 It is stated that, considering the expansion, it is desirable to make the outer dimension of the heat storage structure in a state in which the heat I is not absorbed in advance smaller than the inner diameter of the clamping unit. However, making the heat storage structure smaller than the inner diameter of the clamping unit has a notable disadvantage: the heat storage structure is not configured to be in direct contact with the substrate, as shown in US 2014/0017613. Additional components need to be provided to move the heat generated in the substrate to the heat storage structure. US 2014/0017613 teaches the use of a liquid, such as water, which completely fills the gap between the substrate and the substrate. The present invention provides a completely different solution to this problem by using an array of droplets of heat absorbing material that is configured to be spaced apart from the support and from other droplets in the array of droplets, and wherein the array of droplets is The isodroplets are configured to contact the base plate and the clamp plate, preferably wherein the droplets are squeezed, wedged or retained between the base plate and the clamp plate.

應注意，當用如由US 2014/0017613提議的較少熱吸收材料填充PCM容器，亦即經配置來用於容納如例如US 7,528,349中所描述的夾持裝置中之PCM的空腔時，空腔將僅部分地填充且將未填充至夾持板。此提供用於空腔中之熱吸收材料之膨脹的空間，但其將亦剝奪熱吸收材料與夾持板之間的直接接觸，與如申請專利範圍第1項中界定的本發明相反。 It should be noted that when filling a PCM container with less heat absorbing material as proposed by US 2014/0017613, ie a cavity configured to accommodate a PCM in a clamping device as described for example in US 7,528,349, the empty The cavity will only be partially filled and will not be filled to the clamping plate. This provides room for expansion of the heat absorbing material in the cavity, but it will also deprive the heat absorbing material of direct contact with the clamping plate, contrary to the present invention as defined in claim 1.

在一實施例中，小滴經配置以致能該等小滴在沿基底板與夾持板之間的間隙之方向上的實質自由膨脹。大體上單獨小滴之總成允許每一小滴在沿間隙之方向上膨脹或收縮，大體上不提供夾持板或基底板上的該等小滴之壓力之增加或降低。 In one embodiment, the droplets are configured to enable substantially free expansion of the droplets in a direction along the gap between the base plate and the clamping plate. The assembly of generally individual droplets allows each droplet to expand or contract in a direction along the gap, generally providing no increase or decrease in pressure holding the droplets on the plate or base plate.

在一實施例中，支撐件陣列固定地附接至夾持板之第二側。藉由將支撐件陣列附接至夾持板之第二側，支撐件經配置於夾持板之大體上固定位置上。此允許以適合的圖案配置支撐件以對夾持板提供剛性支撐，該剛性支撐在該夾持板之區域上為大體上均勻的。另外，此允許提供 基底板與夾持板之間的具有高度精確及可再現的尺寸的間隙。 In one embodiment, the array of supports is fixedly attached to the second side of the clamping plate. By attaching the array of supports to the second side of the clamp plate, the supports are configured in substantially fixed positions of the clamp plate. This allows the supports to be configured in a suitable pattern to provide rigid support to the clamping plate that is substantially uniform over the area of the clamping plate. Additionally, this allows to provide A gap of highly accurate and reproducible dimensions between the base plate and the clamping plate.

替代地或另外，在一實施例中，該陣列支撐件中之支撐件固定地附接至基底板。在一實施例中，該基底板具備一陣列孔，且其中該陣列支撐件中每一支撐件至少部分地延伸至該陣列孔中之一個孔中，較佳地其中該等支撐件藉由在該孔與延伸至該孔中的該支撐件之間的圓周間隙中提供膠連接固定地配置於該等孔中。藉由在孔之內壁與支撐件之圓周外壁之間提供膠，膠在其硬化期間之任何縮小或膨脹導致在大體上垂直於基底板與夾持板之間的間隙之寬度的方向上作用的力。因此，此等力尤其在膠之硬化或凝結期間大體上不影響或改變基底板與夾持板之間的距離。根據此實施例之基板夾持裝置因此可關於基底板與夾持板之間的間隙之寬度，且亦關於基板夾持裝置之總厚，尤其在垂直於夾持板之第一側的方向上之厚度以高精確度製造。 Alternatively or additionally, in one embodiment, the supports in the array of supports are fixedly attached to the base plate. In one embodiment, the base plate has an array of holes, and wherein each support in the array of supports extends at least partially into one of the holes in the array, preferably wherein the supports are A glue connection is provided in the circumferential gap between the hole and the support extending into the hole to be fixedly arranged in the holes. By providing glue between the inner wall of the hole and the circumferential outer wall of the support, any shrinkage or expansion of the glue during its hardening results in action in a direction substantially perpendicular to the width of the gap between the base plate and the clamping plate strength. Thus, these forces do not substantially affect or change the distance between the base plate and the clamping plate, especially during the hardening or setting of the glue. The substrate clamping device according to this embodiment can thus be related to the width of the gap between the base plate and the clamping plate, and also to the overall thickness of the substrate clamping device, especially in the direction perpendicular to the first side of the clamping plate The thickness is manufactured with high precision.

在一實施例中，該基板夾持裝置進一步包含一陣列環，該等環配置於夾持板與基底板之間的間隙中，且其中該陣列環中每一環經配置以包圍該陣列小滴中之一個小滴。此等環中每一個可用作熱吸收材料之該陣列小滴中之小滴的模具，其中小滴配置在環內側。 In one embodiment, the substrate clamping device further includes an array of rings disposed in the gap between the clamp plate and the substrate plate, and wherein each ring of the array of rings is configured to surround the array of droplets One of the droplets. Each of these rings can be used as a mold for a droplet of the array of droplets of heat absorbing material, with the droplets disposed inside the ring.

在一實施例中，該等環之厚度小於夾持板與基底板之間的間隙之寬度。較佳地，環之尺寸及/或材料經選擇使得該等環之厚度保持小於間隙之寬度，而不管歸因於尤其在基板夾持裝置之工作溫度範圍內的溫度改變的環之任何膨脹或收縮。環並未處於基底板及夾持板兩者之接觸中，且因此環未將實質性力施加至夾持板及基底板。因此，環對間隙之寬度不具有效應。 In one embodiment, the thickness of the rings is less than the width of the gap between the clamping plate and the base plate. Preferably, the dimensions and/or materials of the rings are selected such that the thickness of the rings remains less than the width of the gap, regardless of any expansion or shrink. The ring is not in contact with both the base plate and the clamping plate, and thus the ring does not apply substantial force to the clamping plate and the base plate. Therefore, the ring has no effect on the width of the gap.

當使用此類環作為用於小滴之模具時，在第一情況下亦使小滴比夾持板與基底板之間的間隙之寬度薄，且該等小滴隨後經「凝固」成固體。熱吸收材料之此等固體小滴在基板夾持裝置之製造期間可經容易地處置且配置在基底板與夾持板之間。當夾持板經配置於基底板之頂部上，並且支撐件陣列及固體小滴陣列在之間時，熱吸收材料之小滴熔化以產生接觸基底板及夾持板兩者的液體小滴。另外，小滴在沿間隙之方向上縮小，從而提供空間以致能該等小滴在沿基底板與夾持板之間的間隙之方向上的膨脹。隨後，處於與基底板及夾持板兩者接觸中的小滴再次凝固。此等凝固的小滴提供用於自夾持板及/或基底板吸收熱之構件。 When such rings are used as molds for the droplets, the droplets are also made thinner than the width of the gap between the clamping plate and the base plate in the first case, and the droplets are then "solidified" into a solid . These solid droplets of heat absorbing material can be easily handled and disposed between the base plate and the clamping plate during manufacture of the substrate clamping device. When the clamping plate is disposed on top of the base plate, with the array of supports and the solid droplet array in between, the droplets of heat absorbing material melt to produce liquid droplets that contact both the base plate and the clamping plate. In addition, the droplets shrink in the direction along the gap, thereby providing space to enable expansion of the droplets in the direction along the gap between the base plate and the clamping plate. Subsequently, the droplets in contact with both the base plate and the clamping plate solidify again. These solidified droplets provide means for absorbing heat from the clamping plate and/or the base plate.

較佳地，小滴包含具有相對於夾持板及/或基底板之面對基底板與夾持板之間的間隙的表面的高表面張力之材料。使用具有高表面張力之熱吸收材料有利地促進基底板及夾持板兩者藉由液體小滴之接觸。 Preferably, the droplets comprise a material with high surface tension relative to the surface of the clamping plate and/or the base plate facing the gap between the base plate and the clamping plate. The use of heat absorbing materials with high surface tension advantageously facilitates contact of both the base plate and the clamping plate by liquid droplets.

另外或替代地，環提供用於固定基底板與夾持板之間的間隙中之小滴之位置的構件。 Additionally or alternatively, the ring provides means for fixing the position of the droplet in the gap between the base plate and the clamping plate.

較佳地，環由可撓性或彈性材料製成。此實施例之環亦促進該等小滴在沿基底板與夾持板之間的間隙之方向上的膨脹。 Preferably, the ring is made of flexible or elastic material. The ring of this embodiment also promotes the expansion of the droplets in the direction along the gap between the base plate and the clamping plate.

在一實施例中，基底板及/或夾持板具備一陣列袋部，其中在該陣列袋部中之袋部處的介於夾持板與基底板之間的間隙之寬度大於該袋部周圍的介於夾持板與基底板之間的間隙之寬度，且其中該陣列袋部中每一袋部經配置來用於夾持該陣列小滴中之一個小滴。應注意，每一袋部亦可經提供為壓痕或凹陷，尤其淺壓痕或凹陷。袋部經配置於基底板之面對間隙的表面及/或夾持板之面對間隙的表面中。較佳地，該等袋部之深度 小於該等小滴之高度。袋部提供用於固定基底板與夾持板之間的間隙中之小滴之位置的構件，尤其在不需要使用環的情況下。因為不需要環或其他構件來大體上固定小滴之位置，所以小滴可經配置成較接近在一起，此提供夾持板之第二側處的區域上的熱吸收材料之較好覆蓋。 In one embodiment, the base plate and/or the clamping plate is provided with an array of pockets, wherein the width of the gap between the clamping plate and the base plate at a pocket in the array of pockets is greater than the width of the pocket The width of the surrounding gap between the clamping plate and the base plate, and wherein each pocket in the array of pockets is configured for clamping a droplet in the array of droplets. It should be noted that each pocket may also be provided as an indentation or depression, especially a shallow indentation or depression. The pockets are disposed in the gap-facing surface of the base plate and/or the gap-facing surface of the clamping plate. Preferably, the depth of the pockets less than the height of the droplets. The pockets provide means for securing the position of the droplet in the gap between the base plate and the clamping plate, especially if the use of a ring is not required. Because no rings or other members are required to substantially fix the position of the droplets, the droplets can be arranged closer together, which provides better coverage of the heat absorbing material on the area at the second side of the clamping plate.

在一實施例中，該陣列袋部中之至少一個袋部大體上經成形為圓錐、圓錐形錘台、截斷球形，或球形錘台。較佳地，袋部經成形使得袋部之圓周邊緣處或附近的間隙之寬度小於袋部之中心處或附近的間隙之寬度。在此狀況下，袋部之形狀幫助大體上將小滴保持在所要位置上，尤其當PCM展現相較於與夾持板及/或基底板之面對間隙的表面之黏合的更大內聚力時。 In one embodiment, at least one pocket of the array of pockets is generally shaped as a cone, conical hammer, truncated sphere, or spherical hammer. Preferably, the pocket is shaped such that the width of the gap at or near the circumferential edge of the pocket is smaller than the width of the gap at or near the center of the pocket. In this case, the shape of the pocket helps to generally hold the droplet in the desired position, especially when the PCM exhibits greater cohesion than adhesion to the gap-facing surfaces of the clamping plate and/or the base plate .

在一實施例中，基底板之面對間隙的表面包含一陣列袋部，其中該陣列袋部中每一袋部包含彈性部件，該彈性部件跨過該袋部且配置成與該袋部之底部表面間隔分開，且其中每一袋部包含來自該陣列小滴的小滴，其中該小滴配置在該彈性部件與夾持板之間。彈性部件提供用於藉由彈性部件朝向袋部之底部表面之彎曲來佔據在大體上垂直於間隙之方向上的任何殘餘膨脹之構件。另外，彈性部件可幫助朝向覆蓋板推進小滴，以確保且提供小滴與覆蓋板之間的穩定接觸。較佳地，彈性部件之彈性經選擇使得藉由彎曲的彈性部件提供的彈簧力大體上不導致夾持板之局部變形。 In one embodiment, the gap-facing surface of the base plate includes an array of pockets, wherein each pocket in the array includes an elastic member that spans the pocket and is configured to be in contact with the pocket. The bottom surfaces are spaced apart, and wherein each pocket contains a droplet from the array of droplets, wherein the droplet is disposed between the resilient member and the clamping plate. The elastic member provides means for taking up any residual expansion in a direction substantially perpendicular to the gap by the bending of the elastic member towards the bottom surface of the pocket. Additionally, the elastic member may help propel the droplet towards the cover plate to ensure and provide stable contact between the droplet and the cover plate. Preferably, the elasticity of the elastic member is selected such that the spring force provided by the curved elastic member does not substantially cause local deformation of the clamping plate.

在一實施例中，該彈性部件與該夾持板之間的距離大於該夾持板與該基底板之鄰近於該等袋部的表面之間的距離。因此，彈性部件經配置在對應袋部內側。一方面，彈性部件經配置成與袋部之底部表面間隔 分開，以允許彈性部件朝向袋部之底部表面彎曲。另一方面，彈性部件經配置在包圍袋部的基底板之表面以下，此提供用於固定基底板與夾持板之間的間隙中之小滴之位置的構件。 In one embodiment, the distance between the elastic member and the clamping plate is greater than the distance between the clamping plate and the surfaces of the base plate adjacent to the pockets. Therefore, the elastic members are arranged inside the corresponding pockets. In one aspect, the elastic member is configured to be spaced from the bottom surface of the pocket separated to allow the elastic member to flex towards the bottom surface of the pocket. On the other hand, the elastic member is arranged below the surface of the base plate surrounding the pocket, which provides means for fixing the position of the droplet in the gap between the base plate and the clamping plate.

在一實施例中，彈性部件包含覆蓋，較佳地覆蓋板。因此，覆蓋或覆蓋板覆蓋袋部之底部表面，且較佳地將覆蓋或覆蓋板與袋部之底部表面之間的袋部之部分與覆蓋或覆蓋板上方的袋部之部分分開。在一實施例中，覆蓋或覆蓋板為大體上平坦的。此平坦覆蓋或覆蓋板可容易地藉由自一大塊適合的材料切割該覆蓋或覆蓋板來產生。在一替代性實施例中，覆蓋或覆蓋板為非平坦的，且較佳地經成形為圓錐、圓錐形錘台、截斷球形，或球形錘台。除藉由覆蓋或覆蓋板朝向袋部之底部表面之彎曲來佔據在大體上垂直於間隙之方向上的任何殘餘膨脹之優點之外，此非平坦覆蓋板提供與以上參考錐形袋部所描述的相同優點。在一實施例中，覆蓋或覆蓋板經成形為具有圓周凸緣之杯，該圓周凸緣經置放以至少部分地處於與基底板接觸中以用於支撐杯形覆蓋或覆蓋板。 In one embodiment, the elastic member comprises a cover, preferably a cover plate. Thus, the cover or cover sheet covers the bottom surface of the pocket and preferably separates the portion of the pocket between the cover or cover sheet and the bottom surface of the pocket from the portion of the pocket above the cover or cover sheet. In one embodiment, the cover or cover plate is substantially flat. This flat cover or cover sheet can easily be produced by cutting the cover or cover sheet from a large piece of suitable material. In an alternative embodiment, the cover or cover plate is non-planar, and is preferably shaped as a cone, conical hammer, truncated sphere, or spherical hammer. In addition to taking advantage of any residual expansion in the direction generally perpendicular to the gap by the curvature of the cover or cover sheet towards the bottom surface of the pocket, this non-planar cover sheet provides the same benefits as described above with reference to the tapered pocket the same advantages. In one embodiment, the cover or cover plate is shaped as a cup with a circumferential flange placed to be at least partially in contact with the base plate for supporting the cup-shaped cover or cover plate.

在一實施例中，每一袋部包含用於將該彈性部件之邊緣之至少部分，較佳地覆蓋或覆蓋板之圓周邊緣支撐在該袋部中的支撐元件。因此，支撐元件經配置以用於支撐彈性部件之邊緣之至少部分，此允許彈性部件之中心部分朝向袋部之底部表面彎曲。較佳地，PCM之小滴大體上中心地配置於彈性部件之頂部上。 In one embodiment, each pocket comprises support elements for supporting at least part of the edge of the elastic member, preferably the circumferential edge of the cover or cover plate, in the pocket. Accordingly, the support element is configured for supporting at least part of the edge of the elastic member, which allows the central portion of the elastic member to bend towards the bottom surface of the pocket. Preferably, the droplet of PCM is disposed substantially centrally on top of the elastic member.

在一實施例中，支撐元件包含配置在該袋部之圓周側壁中的輪緣或台階。較佳地在袋部周圍的圓周處延伸的輪緣或台階可藉由首先在基底板中將具有第一直徑之第一袋部部分製造至第一預定深度，及隨後在 第一袋部部分中大體上中心地將具有小於第一直徑之第二直徑的第二袋部部分製造至第二預定深度相對容易地製造。替代地，可藉由首先將具有第二直徑之袋部部分製造至袋部之預定深度，及隨後將旋轉切刀***第一袋部部分中直至輪緣或台階之水平，及圍繞第一袋部部分且在向外方向上循環地驅動旋轉切刀直至第一直徑以用於將圍繞第一袋部部分的基底板之材料銑離，同時維持恆定水平或深度來製造此輪緣或台階。此得到配置在該預定深度處的輪緣或台階。藉由使用具有小於第一直徑但大於第二直徑之直徑的彈性部件，彈性部件之邊緣擱置在該輪緣或台階之頂部。 In one embodiment, the support element comprises a rim or step disposed in the circumferential side wall of the pocket. The rim or step, preferably extending at the circumference around the pocket, can be made by first manufacturing a first pocket portion having a first diameter in the base plate to a first predetermined depth, and then in the base plate. It is relatively easy to manufacture a second pocket portion having a second diameter smaller than the first diameter to a second predetermined depth substantially centrally in the first pocket portion. Alternatively, a pocket portion with the second diameter can be produced by first manufacturing the pocket portion to a predetermined depth of the pocket portion, and then inserting a rotary cutter into the first pocket portion up to the level of the rim or step, and surrounding the first pocket This rim or step is made by driving the rotary cutter cyclically in the outer portion and in the outward direction up to the first diameter for milling away the material of the base plate surrounding the first pocket portion while maintaining a constant level or depth. This results in a rim or step disposed at the predetermined depth. By using an elastic member having a diameter smaller than the first diameter but larger than the second diameter, the edge of the elastic member rests on top of the rim or step.

在一實施例中，每一袋部包含配置在夾持板與彈性覆蓋板之間的間隙中的環或環圈，且其中環或環圈經配置以包圍該口袋中之小滴。環或環圈配置於該袋部中，較佳地在該彈性覆蓋板之頂部上，且充當用於該袋部中之PCM之小滴之限制部件。 In one embodiment, each pocket portion includes a ring or loop disposed in the gap between the clamping plate and the elastic cover plate, and wherein the loop or loop is configured to surround the droplet in the pocket. A ring or loop is arranged in the pocket, preferably on top of the elastic cover plate, and acts as a confinement means for droplets of PCM in the pocket.

在一實施例中，該環或環圈之厚度小於夾持板與彈性覆蓋板之間的距離。較佳地，環或環圈之尺寸及/或材料經選擇使得該環或環圈之厚度保持小於彈性覆蓋板與夾持板之間的寬度，而不管歸因於尤其在基板夾持裝置之工作溫度範圍內的溫度之改變的環或環圈之任何膨脹或收縮。環或環圈處於與覆蓋板及夾持板中僅一個接觸中。 In one embodiment, the thickness of the ring or ring is smaller than the distance between the clamping plate and the elastic cover plate. Preferably, the size and/or material of the ring or ring is chosen such that the thickness of the ring or ring remains smaller than the width between the elastic cover plate and the clamping plate, regardless of the size and/or material due to, inter alia, the substrate clamping device. Any expansion or contraction of the ring or ring with a change in temperature within the operating temperature range. The ring or ring is in contact with only one of the cover plate and the clamping plate.

在一實施例中，環或環圈由可撓性或彈性材料製成。此實施例之環或環圈亦促進該環或環圈內側的PCM之小滴尤其在沿基底板與夾持板之間的間隙之方向上的膨脹。 In one embodiment, the ring or loop is made of a flexible or elastic material. The ring or ring of this embodiment also promotes the expansion of the droplets of PCM inside the ring or ring, especially in the direction along the gap between the base plate and the clamping plate.

在一實施例中，環或環圈包含大體上矩形橫截面。特定而言，環或環圈包含在大體上垂直夾持板之第一側的方向上之矩形橫截面。 較佳地，環或環圈包含大體上平坦上表面，其中該大體上平坦上表面配置成面對夾持板之第二側。在液體PCM之密度高於環或環圈之材料之密度的狀況下，此實施例為尤其有利的。在此狀況下，環或環圈將在其處於液體狀態中時「漂浮」在PCM材料中，此將朝向夾持板之第二側推動環或環圈，且將允許環或環圈之平坦上表面緊靠夾持板之第二側且提供對PCM之限制。 In one embodiment, the ring or loop comprises a substantially rectangular cross-section. In particular, the ring or loop comprises a rectangular cross-section in a direction substantially perpendicular to the first side of the clamping plate. Preferably, the ring or ring includes a substantially flat upper surface, wherein the substantially flat upper surface is configured to face the second side of the clamping plate. This embodiment is particularly advantageous in situations where the density of the liquid PCM is higher than the density of the material of the ring or ring. In this condition, the ring or ring will "float" in the PCM material when it is in the liquid state, which will push the ring or ring towards the second side of the clamping plate and will allow the ring or ring to flatten The upper surface abuts the second side of the clamping plate and provides restraint on the PCM.

在一實施例中，基底板具備排氣孔，該等排氣孔在該等袋部之底部表面中流出，且該等排氣孔較佳地大體上在該等袋部之中心流出。由於排氣孔，底部表面與彈性覆蓋板之間的袋部部分內側的壓力大體上不由彈性覆蓋板之彎曲改變。 In one embodiment, the base plate is provided with vents that flow out in the bottom surfaces of the pockets, and preferably the vents flow out substantially in the center of the pockets. Due to the vent holes, the pressure inside the pocket portion between the bottom surface and the elastic cover plate is not substantially changed by the bending of the elastic cover plate.

在用於在基板處理儀器或基板成像儀器中使用的一實施例中，該陣列小滴中之小滴包含具有在該基板處理儀器至少在該基板之處理期間之溫度，或該基板成像儀器至少在該基板之成像期間之溫度處或附近的熔化溫度或熔化範圍的材料。較佳地，該陣列小滴中之小滴包含具有在工業冷卻劑之工作溫度處或附近的熔化溫度或熔化範圍的材料。較佳地，在使用中，該基板處理儀器之溫度接近於工業冷卻劑之操作溫度或稍微高於該操作溫度，該操作溫度較佳地在室內溫度處或稍微低於室內溫度，較佳地在18攝氏度處或稍微低於18攝氏度。因此，該基板處理儀器或基板成像儀器之機器部分不需要在溫度上上升，且工業冷卻劑可容易地藉由包含根據本發明之基板夾持裝置的基板處理儀器或基板成像儀器應用或應用於該基板處理儀器或基板成像儀器中。 In an embodiment for use in a substrate processing apparatus or a substrate imaging apparatus, the droplets in the array of droplets comprise a temperature at least during processing of the substrate by the substrate processing apparatus, or the substrate imaging apparatus at least A material having a melting temperature or melting range at or near the temperature during imaging of the substrate. Preferably, the droplets in the array of droplets comprise a material having a melting temperature or melting range at or near the operating temperature of the industrial coolant. Preferably, in use, the temperature of the substrate processing apparatus is close to or slightly above the operating temperature of industrial coolants, preferably at or slightly below room temperature, preferably At or slightly below 18 degrees Celsius. Therefore, the machine part of the substrate processing apparatus or the substrate imaging apparatus does not need to rise in temperature, and the industrial coolant can be easily applied or applied by the substrate processing apparatus or the substrate imaging apparatus comprising the substrate holding device according to the present invention in the substrate processing apparatus or the substrate imaging apparatus.

在一實施例中，間隙包含至基板夾持裝置外側的敞開連接。 間隙內側的空氣壓力或真空壓力大體上等於基板夾持裝置外側的空氣壓力或真空壓力。在一實施例中，間隙在基板夾持裝置之周圍側邊緣處為大體上敞開的，較佳地間隙沿基板夾持裝置之大體上完整周圍側邊緣為大體上敞開的。 In one embodiment, the gap includes an open connection to the outside of the substrate clamping device. The air pressure or vacuum pressure inside the gap is substantially equal to the air pressure or vacuum pressure outside the substrate holding device. In one embodiment, the gap is substantially open at the peripheral side edge of the substrate gripping device, preferably the gap is generally open along a substantially complete peripheral side edge of the substrate gripping device.

根據一第二態樣，本發明提供一種基板夾持裝置，該基板夾持裝置包含：夾持板，其中該夾持板包含用於夾持基板之第一側，基底板，其配置在距該夾持板一距離處且在該夾持板之背離該第一側的第二側處提供該基底板與該夾持板之間的間隙，一陣列支撐件，該等支撐件至少配置在該夾持板與該基底板之間，及熱吸收材料之一陣列小滴，該等小滴配置在該夾持板與該基底板之間，其中該等小滴在大體上垂直於該夾持板之該第一側的方向上藉由該夾持板及該基底板限制，且其中該等小滴經配置以致能該等小滴至少在沿該基底板與該夾持板之間的該間隙之方向上之膨脹。 According to a second aspect, the present invention provides a substrate clamping device comprising: a clamping plate, wherein the clamping plate includes a first side for clamping the substrate, and a base plate disposed at a distance from A gap between the base plate and the clamping plate is provided at a distance from the clamping plate and at a second side of the clamping plate facing away from the first side, an array of supports arranged at least in Between the clamp plate and the base plate, and an array of droplets of heat absorbing material, the droplets are disposed between the clamp plate and the base plate, wherein the droplets are substantially perpendicular to the clamp The direction of the first side of the holding plate is limited by the clamping plate and the base plate, and wherein the droplets are configured so that the droplets are at least along the direction between the base plate and the clamping plate. Expansion in the direction of the gap.

較佳地包含液體及/或固體小滴的小滴陣列大體上限制在夾持板與基底板之間。因此，小滴處於與夾持板及基底板兩者接觸中。此尤其可藉由單獨小滴之體積及/或基底板與夾持板之間的間隙之寬度之適當選擇加以配置。夾持板與小滴之間的接觸一方面提供自夾持板至熱吸收材料之小滴的適當熱傳導，且基底板與小滴之間的接觸另一方面提供自基底板至熱吸收材料之小滴的適當熱傳導。 The droplet array, preferably comprising liquid and/or solid droplets, is generally confined between the clamping plate and the base plate. Thus, the droplet is in contact with both the clamping plate and the base plate. This can be configured in particular by suitable selection of the volume of the individual droplets and/or the width of the gap between the base plate and the clamping plate. The contact between the clamping plate and the droplets provides, on the one hand, adequate heat conduction from the clamping plate to the droplets of heat absorbing material, and the contact between the base plate and the droplets, on the other hand, provides a connection from the base plate to the heat absorbing material. Proper thermal conduction of the droplets.

根據一第三態樣，本發明提供一種用於處理或將樣本成像之儀器，其中該儀器包含 源，其用於具有能量之電磁輻射或粒子，曝光單元，其用於使該樣本曝光於該具有能量之電磁輻射或粒子，及如以上所描述之基板夾持裝置，或其實施例，該基板夾持裝置用於至少在該曝光期間夾持該樣本。 According to a third aspect, the present invention provides an apparatus for processing or imaging a sample, wherein the apparatus comprises a source for energized electromagnetic radiation or particles, an exposure unit for exposing the sample to the energized electromagnetic radiation or particles, and a substrate holding device as described above, or an embodiment thereof, the A substrate holding device is used to hold the sample at least during the exposure.

在一實施例中，曝光單元包含用於至少部分地及/或暫時地操縱及/或阻擋電磁輻射或帶電粒子之至少部分的組件，其中該組件具備導管以用於導引冷卻流體穿過導管，其中該等導管經配置成處於與該組件熱接觸中。因此，導管中之冷卻流體經配置以用於移除藉由電磁輻射或帶電粒子之至少部分藉由該組件之該部分地及/或暫時地操縱及/或阻擋產生的熱。此組件包含例如膜片、靜電束偏轉器，或靜電或磁透鏡系統。 In one embodiment, the exposure unit comprises an assembly for at least partially and/or temporarily manipulating and/or blocking at least part of the electromagnetic radiation or charged particles, wherein the assembly is provided with a conduit for guiding a cooling fluid through the conduit , wherein the conduits are configured to be in thermal contact with the component. Accordingly, the cooling fluid in the conduit is configured for removing heat generated by electromagnetic radiation or charged particles, at least in part, by the partial and/or temporary manipulation and/or blocking of the component. Such components include, for example, diaphragms, electrostatic beam deflectors, or electrostatic or magnetic lens systems.

通常，曝光單元經配置在基板之背離基板夾持裝置的側處。當曝光單元包含用於電磁輻射或帶電粒子之至少部分之至少部分地及/或暫時地操縱及/或阻擋的一或多個組件時，該組件在使用中升溫。例如，當該等電磁輻射或帶電粒子之至少部分衝擊在組件上時。除藉由在曝光期間衝擊於基板中的電磁輻射或帶電粒子產生的熱之外，來自曝光單元之一或多個組件的輻射熱可進一步使基板升溫，尤其當一或多個組件配置成接近於基板之表面時。來自曝光單元的此額外熱將亦藉由本發明之基板夾持裝置中之熱吸收材料吸收，此導致熱吸收材料之較快速耗盡，尤其當熱吸收材料為PCM時。因此，有利的是盡可能多地降低來自曝光單元的額外熱，且組合本發明之基板夾持裝置與具有用於冷卻該曝光單元之該至少一個組件之冷卻配置的曝光單元。 Typically, the exposure unit is arranged at the side of the substrate facing away from the substrate clamping device. When the exposure unit comprises one or more components for at least partial and/or temporary manipulation and/or blocking of electromagnetic radiation or at least part of charged particles, the components heat up in use. For example, when at least part of the electromagnetic radiation or charged particles impinges on the component. In addition to heat generated by electromagnetic radiation or charged particles impinging on the substrate during exposure, radiant heat from one or more components of the exposure unit can further heat the substrate, especially when the one or more components are configured close to the surface of the substrate. This additional heat from the exposure unit will also be absorbed by the heat absorbing material in the substrate clamping device of the present invention, which results in a faster depletion of the heat absorbing material, especially when the heat absorbing material is PCM. Therefore, it is advantageous to reduce the extra heat from the exposure unit as much as possible, and to combine the substrate holding device of the present invention with an exposure unit having a cooling arrangement for cooling the at least one component of the exposure unit.

在一實施例中，投影透鏡系統經配置以用於在多束帶電粒子 微影術系統中使用，其中導管之至少一第一部分配置在兩個帶電粒子束之間的區域中，且其中導管之該第一部分之中心軸線在大體上垂直於曝光單元之中心軸線或光學軸線的方向上延伸。因此，導管之第一部分經配置成接近於帶電粒子束在使用中行進穿過投影透鏡系統所在的區域，此允許有效地自此區域移除任何產生的熱。 In one embodiment, the projection lens system is configured for use in multiple beams of charged particles For use in a lithography system, wherein at least a first portion of the conduit is disposed in the region between two charged particle beams, and wherein the central axis of the first portion of the conduit is substantially perpendicular to the central or optical axis of the exposure unit extending in the direction. Thus, the first portion of the conduit is configured to be close to the area where the charged particle beam travels through the projection lens system in use, which allows for effective removal of any heat generated from this area.

在一實施例中，導管之至少一第二部分經配置以延伸，使得導管之該第二部分之中心軸線在大體上平行於曝光單元之中心軸線或光學軸線的方向上延伸。因此，導管之第一部分可配置在曝光單元之在使用中面對基板的第一末端處或附近。導管之第二部分提供導管遠離曝光單元之第一末端的延伸，此允許提供用於與第一末端適合地間隔分開的流體的輸入連接及/或輸出連接，且將曝光單元之第一末端配置成極接近於基板。在一實施例中，該組件包含配置在曝光單元之該第一末端處的投影透鏡系統。 In one embodiment, at least a second portion of the conduit is configured to extend such that the central axis of the second portion of the conduit extends in a direction substantially parallel to the central or optical axis of the exposure unit. Thus, the first portion of the conduit may be arranged at or near the first end of the exposure unit which, in use, faces the substrate. The second portion of the conduit provides an extension of the conduit away from the first end of the exposure unit, which allows providing input and/or output connections for fluids suitably spaced from the first end and configures the first end of the exposure unit very close to the substrate. In one embodiment, the assembly includes a projection lens system disposed at the first end of the exposure unit.

根據一第四態樣，本發明係關於一種用於在用於以具有能量之電磁輻射或帶電粒子曝光基板之曝光單元中使用的投影透鏡系統，其中該投影透鏡系統包含用於至少部分地及/或暫時地操縱及/或阻擋電磁輻射或帶電粒子之至少部分的組件，其中該組件具備導管以用於導引冷卻流體穿過該等導管，其中該等導管經配置成處於與該組件熱接觸中。 According to a fourth aspect, the present invention relates to a projection lens system for use in an exposure unit for exposing a substrate with energetic electromagnetic radiation or charged particles, wherein the projection lens system comprises a projection lens system for at least partially and An assembly that temporarily manipulates and/or blocks at least part of electromagnetic radiation or charged particles, wherein the assembly is provided with conduits for directing cooling fluid through the conduits, wherein the conduits are configured to be in contact with the assembly in contact.

投影透鏡系統因此提供用於在例如溫度穩定微影系統中使用的溫度控制的曝光單元。投影透鏡經有效地冷卻至較好地在普通製造廠溫度之溫度範圍內的溫度範圍，以便具有處於穩定及內部一致，亦即平衡熱狀態中的微影術系統，藉此一方面避免儀器設計中之複雜性且節省能量，且另一方面促進最佳曝光條件，如對於曝光中之最後精確度且在當代 微影術內極度所需要的。 The projection lens system thus provides a temperature-controlled exposure unit for use in eg a temperature-stabilized lithography system. The projection lens is effectively cooled to a temperature range that is well within the temperature range of ordinary manufacturing temperatures in order to have a lithography system in a stable and internally consistent, i.e., equilibrium thermal state, thereby avoiding instrument design on the one hand complexity and energy saving in the Extremely needed in lithography.

在一實施例中，投影透鏡系統經配置以用於在多束帶電粒子微影術系統中使用，其中導管之至少一第一部分配置在兩個帶電粒子束之間的區域中，其中導管之該第一部分之中心軸線在大體上垂直於投影透鏡系統之中心軸線或光學軸線的方向上延伸。 In one embodiment, the projection lens system is configured for use in a multibeam charged particle lithography system, wherein at least a first portion of the conduit is disposed in the region between two charged particle beams, wherein the The central axis of the first portion extends in a direction substantially perpendicular to the central or optical axis of the projection lens system.

在一實施例中，導管之至少一第二部分經配置以延伸，使得導管之該第二部分之中心軸線在大體上平行於投影透鏡系統之中心軸線或光學軸線的方向上延伸。 In one embodiment, at least a second portion of the conduit is configured to extend such that a central axis of the second portion of the conduit extends in a direction substantially parallel to the central or optical axis of the projection lens system.

根據一第五態樣，本發明提供一種用於製造基板夾持裝置之方法，該基板夾持裝置包含：夾持板，其中該夾持板包含用於夾持基板之第一側；基底板，其配置在距該夾持板一距離處且在該夾持板之背離該第一側的第二側面處提供該基底板與該夾持板之間的間隙；一陣列支撐件，該等支撐件至少配置在該夾持板與該基底板之間；以及熱吸收材料之一陣列小滴，其中該方法包含以下步驟：將與該支撐件且與該陣列小滴中之其他小滴間隔分離的小滴配置在該夾持板與該基底板之間，其中該等小滴至少在其液相中經配置以接觸該夾持板及該基底板兩者，且/或其中該等小滴在大體上垂直於該夾持板之該第一側的方向上藉由該夾持板及該基底板限制，且其中該等小滴經配置以致能該等小滴在沿該基底板與該夾持板之間的該間隙之方向上的膨脹。 According to a fifth aspect, the present invention provides a method for manufacturing a substrate clamping device, the substrate clamping device comprising: a clamping plate, wherein the clamping plate includes a first side for clamping a substrate; a base plate , which is arranged at a distance from the clamping plate and provides a gap between the base plate and the clamping plate at a second side of the clamping plate facing away from the first side; an array of supports, the etc. a support disposed at least between the clamping plate and the base plate; and an array of droplets of heat absorbing material, wherein the method includes the steps of: spacing the support and other droplets in the array of droplets Separated droplets are disposed between the clamp plate and the base plate, wherein the droplets are disposed at least in their liquid phase to contact both the clamp plate and the base plate, and/or wherein the droplets are Droplets are confined by the clamp plate and the base plate in a direction substantially perpendicular to the first side of the clamp plate, and wherein the droplets are configured such that the droplets are oriented along the base plate and the base plate. Expansion in the direction of the gap between the clamping plates.

根據一第六態樣，本發明係關於用於裝配基板夾持裝置之方法，其中該方法包含以下步驟：提供夾持板，其中該夾持板包含用於夾持基板之第一側，及一陣列支 撐件，該等支撐件固定至該夾持板之背離該第一側的第二側，其中該等支撐件經配置以大體上垂直於該第二側延伸；提供基底板，該基底板包含一陣列孔以用於將該等支撐件安裝於該等孔中；將與該等支撐件且與該陣列小滴中之其他小滴間隔分開的熱吸收材料之一陣列小滴在面對該基底板的一側處配置於該夾持板上，或在面對該夾持板的一側處配置於該基底板上；將具有該等支撐件之該夾持板及該基底板朝向彼此移動，直至已達到該夾持板與該基底板之間的所要距離，其中該等支撐件定位於該等孔中，且該陣列小滴配置於該夾持板與該基底板之間的間隙中；以及將該等支撐件中一或多個固定於該對應孔中。 According to a sixth aspect, the present invention relates to a method for assembling a substrate clamping device, wherein the method comprises the steps of: providing a clamping plate, wherein the clamping plate includes a first side for clamping the substrate, and an array of branches braces secured to a second side of the clamping plate facing away from the first side, wherein the braces are configured to extend substantially perpendicular to the second side; providing a base plate comprising an array of holes for mounting the supports in the holes; placing an array of droplets of heat absorbing material spaced from the supports and from other droplets in the array of droplets facing the One side of the base plate is disposed on the clamping plate, or the side facing the clamping plate is disposed on the base plate; the clamping plate with the supports and the base plate are facing each other moving until the desired distance between the clamping plate and the base plate has been reached, wherein the supports are positioned in the holes and the array of droplets is disposed in the gap between the clamping plate and the base plate and one or more of the supports are fixed in the corresponding holes.

在一實施例中，支撐件經由膠連接固定至該第二側。在一實施例中，一或多個支撐件經由膠連接固定於對應孔中，該膠連接提供於該孔與延伸至該孔中的支撐件之間的圓周間隙中。 In one embodiment, the support is fixed to the second side via a glue connection. In one embodiment, one or more supports are fixed in the corresponding holes via glue connections provided in the circumferential gaps between the holes and the supports extending into the holes.

根據一第七態樣，本發明係關於如以上所描述之此基板夾持裝置在用於處理或將樣本成像之儀器，較佳地微影術系統，更佳地帶電粒子束微影術系統，諸如多束帶電粒子微影術系統中之使用。 According to a seventh aspect, the present invention relates to the substrate holding device as described above in an apparatus for processing or imaging a sample, preferably a lithography system, more preferably a charged particle beam lithography system , such as those used in multibeam charged particle lithography systems.

在一實施例中，用於處理或將樣本成像之儀器包含用於具有能量之電磁輻射或粒子之源，及用於使該樣本曝光於具有能量之該等電磁輻射或帶電粒子之曝光單元，其中該曝光單元包含用於至少部分地及/或暫時地操縱及/或阻擋電磁輻射或帶電粒子之至少部分的組件，其中該部件具備導管以用於導引冷卻流體穿過該導管，其中該等導管經配置成處於與該 組件熱接觸中。 In one embodiment, the apparatus for processing or imaging the sample comprises a source for electromagnetic radiation or particles with energy, and an exposure unit for exposing the sample to the electromagnetic radiation or charged particles with energy, wherein the exposure unit comprises a component for at least partially and/or temporarily manipulating and/or blocking at least part of the electromagnetic radiation or charged particles, wherein the component is provided with a conduit for guiding a cooling fluid through the conduit, wherein the and other conduits are configured to be in contact with the Components are in thermal contact.

根據一第八態樣，本發明提供一種用於曝光樣本之儀器，其中該儀器包含源，其用於具有能量之電磁輻射或粒子，曝光單元，其用於將該樣本曝光於該等電磁輻射或粒子，其中該曝光單元包含用於至少部分地及/或暫時地操縱及/或阻擋該等電磁輻射或帶電粒子之至少部分的組件，其中該組件包含冷卻配置，該冷卻配置經配置以用於將該組件大體上維持在預定第一溫度處，及基板夾持裝置，其用於至少在該曝光期間夾持該樣本，其中該基板夾持裝置包含溫度穩定配置，該溫度穩定配置經配置以大體上穩定配置於該基板夾持裝置上的樣本之該溫度，其中該溫度穩定配置包含具有在第二溫度處之相變的相變材料，其中該冷卻配置包含控制裝置，該控制裝置經組配來將該第一溫度調節至在該第二溫度附近或等於該第二溫度。 According to an eighth aspect, the present invention provides an apparatus for exposing a sample, wherein the apparatus comprises a source for electromagnetic radiation or particles having energy, an exposure unit for exposing the sample to the electromagnetic radiation or particles, wherein the exposure unit includes components for at least partially and/or temporarily manipulating and/or blocking at least part of the electromagnetic radiation or charged particles, wherein the components include a cooling arrangement configured to use at substantially maintaining the assembly at a predetermined first temperature, and a substrate holding device for holding the sample at least during the exposure, wherein the substrate holding device includes a temperature stable configuration configured at the temperature of the sample disposed on the substrate holding device in a substantially stable configuration, wherein the temperature stable configuration includes a phase change material having a phase change at a second temperature, wherein the cooling configuration includes a control device that is configured to adjust the first temperature to be around or equal to the second temperature.

因為曝光單元經配置以使用具有能量之電磁輻射或粒子曝光樣本，所以曝光單元及/或樣本將吸收能量之至少部分且將在曝光單元及/或基板夾持裝置上之樣本之溫度方面升高。應注意，通常，樣本經配置在距曝光單元之一距離處，使得曝光單元之可能加熱對樣本具有可忽略的效應或大體上無效應，且曝光單元之任何冷卻可與樣本之冷卻無關。特定而言，如申請人之WO 2013/171216中所描述的用於曝光單元之冷卻配置經最佳化以為曝光單元提供最佳溫度，且不需要考慮此最佳溫度對樣本之影響。 Because the exposure unit is configured to expose the sample using electromagnetic radiation or particles with energy, the exposure unit and/or the sample will absorb at least part of the energy and will increase in temperature of the sample on the exposure unit and/or substrate holder . It should be noted that typically, the sample is arranged at a distance from the exposure unit such that possible heating of the exposure unit has negligible or substantially no effect on the sample, and any cooling of the exposure unit may be independent of cooling of the sample. In particular, the cooling arrangement for the exposure unit as described in Applicant's WO 2013/171216 is optimized to provide an optimal temperature for the exposure unit and does not need to consider the effect of this optimal temperature on the sample.

發明人已認識到，有利的是為基板夾持裝置及曝光單元兩者 提供用於控制其溫度之配置，尤其對於曝光單元經配置成接近於樣本的系統，且基於基板夾持裝置之溫度穩定配置之溫度(第二溫度)來控制曝光單元之冷卻配置之溫度(第一溫度)。藉由為曝光單元及基板夾持裝置兩者提供其自有的冷卻配置及溫度穩定配置，可獲得對基板之精確溫度控制，該溫度控制允許在該基板藉由該等電磁輻射或粒子之曝光期間至少大體上將基板之溫度維持在第二溫度處。 The inventors have realised that it is advantageous to provide both the substrate clamping device and the exposure unit Provides a configuration for controlling its temperature, especially for systems in which the exposure unit is configured close to the sample, and controls the temperature of the cooling configuration of the exposure unit based on the temperature of the temperature-stabilizing configuration of the substrate holder (the second temperature). a temperature). By providing both the exposure unit and the substrate holding device with their own cooling configuration and temperature stabilization configuration, precise temperature control of the substrate is obtained, which temperature control allows exposure of the substrate by the electromagnetic radiation or particles The temperature of the substrate is at least substantially maintained at the second temperature during the period.

本發明提出用於界定曝光過程及用於該曝光過程之儀器之概念，該概念適於實踐環境之限制。特定而言，在用於將電磁輻射或粒子投影至該基板上之曝光單元經配置在極接近於該基板處的儀器中，曝光單元之溫度可熱影響基板。藉由例如使用冷卻配置來控制曝光單元之溫度，可大體上防止曝光單元之溫度對基板之負效應。 The present invention proposes a concept for defining the exposure process and the apparatus used for the exposure process, which concept is adapted to the constraints of the practical environment. In particular, in instruments where the exposure unit for projecting electromagnetic radiation or particles onto the substrate is arranged in close proximity to the substrate, the temperature of the exposure unit can thermally affect the substrate. By controlling the temperature of the exposure unit, eg, using a cooling arrangement, negative effects of the temperature of the exposure unit on the substrate can be substantially prevented.

進一步考慮，對於以最經濟的方式獲得此方法或過程，任何此調態此外應以最小努力保持。一方面，在經濟的曝光儀器或方法中，操作溫度不應處在事實上晶圓載體之整個周圍應維持在29,8℃之升高溫度處所在的水平處，如將為在鎵之建議使用的情況下之狀況。在基板夾持裝置中所使用的相變材料之熔化溫度應在相當低的水平處。 On further consideration, for the most economical way to obtain this method or process, any such modulation should additionally be maintained with minimal effort. On the one hand, in an economical exposure apparatus or method, the operating temperature should not be at a level where in fact the entire circumference of the wafer carrier should be maintained at an elevated temperature of 29,8°C, as would be recommended for gallium condition of use. The melting temperature of the phase change material used in the substrate holding device should be at a relatively low level.

另一方面，操作溫度出於如下原因不應大體上高於18℃：當根據哪一冷卻劑應在較低，較佳地相較於操作溫度的僅稍微較低溫度，在曝光期間至少在靶處維持的溫度處，在整合於本發明中時施加進一步考慮時，以此方式，標準製造廠(Fab)冷卻劑可直接地或僅在適度調態的情況下使用於該過程中。考慮到製造廠冷卻劑通常範圍自12℃直至18℃，且偏差應為最小的製造廠環境溫度可通常為室內溫度，亦即不超過25℃，較佳 地不超過22℃，等於第二溫度的相變材料熔化溫度根據本發明之一實施例將經界定，且因此將當選的材料根據靶曝光過程經界定為具有高於18℃之製造廠冷卻劑溫度，較佳地高於18,5℃，且低於25℃之最大室內溫度，較佳地低於22,5℃的操作溫度。 On the other hand, the operating temperature should not be substantially higher than 18°C for the following reasons: when depending on which coolant should be lower, preferably only slightly lower than the operating temperature, at least during exposure The temperature maintained at the target, when incorporating further considerations into the present invention, in this way standard fab coolants can be used in the process directly or only with moderate conditioning. Considering that the factory coolant usually ranges from 12°C to 18°C, and the deviation should be minimal, the ambient temperature of the factory can usually be the room temperature, that is, not more than 25°C, preferably The melting temperature of the phase change material equal to the second temperature, which does not exceed 22°C, will be defined according to one embodiment of the present invention, and therefore the selected material will be defined according to the target exposure process as having a fab coolant above 18°C The temperature, preferably above 18,5°C, and below the maximum room temperature of 25°C, preferably below the operating temperature of 22,5°C.

應注意，如本申請案中涉及的操作溫度為用於曝光樣本之儀器在操作期間的溫度。 It should be noted that the operating temperature as referred to in this application is the temperature during operation of the apparatus used to expose the sample.

在一實施例中，該冷卻配置及該溫度穩定配置經配置使得該第一溫度與該第二溫度之間的差不超過4℃，較佳地不超過2℃。此為樣本提供大體上熱穩定的環境。藉由主動地控制冷卻配置且藉由選擇正確的相變材料，曝光單元及基板夾持裝置之組件經配置以分別大體上維持該第一溫度及該第二溫度，且因此在樣本之曝光期間維持該熱穩定的環境。 In one embodiment, the cooling configuration and the temperature stabilization configuration are configured such that the difference between the first temperature and the second temperature does not exceed 4°C, preferably not more than 2°C. This provides a generally thermally stable environment for the sample. By actively controlling the cooling configuration and by selecting the correct phase change material, the components of the exposure unit and substrate holding device are configured to substantially maintain the first temperature and the second temperature, respectively, and thus during exposure of the sample This thermally stable environment is maintained.

在一實施例中，該第一溫度低於該第二溫度。因此，在使用中，曝光單元，至少其組件之溫度低於基板夾持裝置之溫度及該夾持裝置之頂部上的樣本之溫度。此措施藉由曝光單元之組件大體上防止樣本之任何升溫，即使當用於將電磁輻射或粒子投影至該基板上的曝光單元之組件經配置在極接近樣本處時。 In one embodiment, the first temperature is lower than the second temperature. Thus, in use, the exposure unit, at least its components, are at a temperature lower than the temperature of the substrate holder and the temperature of the sample on top of the holder. This measure substantially prevents any heating of the sample by the components of the exposure unit, even when the components of the exposure unit for projecting electromagnetic radiation or particles onto the substrate are arranged in close proximity to the sample.

在一較佳實施例中，該第一溫度大體上等於該第二溫度。在一實施例中，該第一溫度及該第二溫度大體上等於室內溫度，特定而言等於製造廠(Fab)中的室內溫度。 In a preferred embodiment, the first temperature is substantially equal to the second temperature. In one embodiment, the first temperature and the second temperature are substantially equal to the room temperature, in particular the room temperature in the Fab.

在一實施例中，相變材料包含金屬、合金，或基於金屬的材料。在一較佳實施例中，相變材料包含共熔金屬合金。基於金屬的相變材料在固相及液相兩者中提供高熱傳導率，此確保即使當該相變材料之相當 大的部分已液化時，藉由樣本之曝光產生的熱經導引至相變材料且藉由該相變材料吸收。 In one embodiment, the phase change material comprises a metal, alloy, or metal-based material. In a preferred embodiment, the phase change material comprises a eutectic metal alloy. Metal-based phase change materials provide high thermal conductivity in both the solid and liquid phases, which ensures that even when the phase change materials are comparable When a large portion has liquefied, the heat generated by exposure of the sample is directed to and absorbed by the phase change material.

在一實施例中，該冷卻配置包含導管以用於導引冷卻流體穿過該等導管，其中該等導管經配置成處於與該組件熱接觸中。因此，諸如冷卻水的標準製造廠(Fab)冷卻劑可用於至少冷卻曝光單元之組件。 In one embodiment, the cooling arrangement includes conduits for directing cooling fluid through the conduits, wherein the conduits are configured to be in thermal contact with the component. Thus, standard fab coolant such as cooling water can be used to cool at least the components of the exposure unit.

在一實施例中，該冷卻配置經配置使得該冷卻流體之溫度與該第二溫度之間的差不超過4℃，較佳地不超過2℃。在一實施例中，該冷卻配置包含溫度控制系統，該溫度控制系統經配置以相對於基板夾持裝置之溫度控制冷卻流體之溫度。在一實施例中，該儀器包含用於量測該基板夾持裝置之該溫度及/或該曝光單元，特定而言該曝光單元之鄰近該基板夾持裝置配置的部分之該溫度的溫度感測器。在一實施例中，該冷卻配置包含用於將冷卻流體冷卻至低於第一溫度之溫度的冷卻裝置，及用於加熱該冷卻流體之加熱裝置，其中該加熱裝置在相對於該組件的上游位置處配置於導管中。特定而言，用於量測曝光單元之面對基板夾持裝置的部分之溫度的溫度感測器、用於精確地控制冷卻流體之溫度的組合式冷卻裝置及加熱裝置，及用於基於來自溫度感測器的信號來控制冷卻流體之溫度的溫度控制系統之組合允許以高精度控制曝光裝置之溫度且將基板夾持裝置與曝光單元，特定而言該曝光單元之面對基板夾持裝置的部分之間的溫度差調節至小於4℃，較佳地小於2℃，更佳地小於1℃。 In one embodiment, the cooling arrangement is configured such that the difference between the temperature of the cooling fluid and the second temperature does not exceed 4°C, preferably does not exceed 2°C. In one embodiment, the cooling arrangement includes a temperature control system configured to control the temperature of the cooling fluid relative to the temperature of the substrate holding device. In one embodiment, the apparatus comprises a temperature sense for measuring the temperature of the substrate holding device and/or the exposure unit, in particular the temperature of the portion of the exposure unit disposed adjacent to the substrate holding device tester. In one embodiment, the cooling arrangement comprises cooling means for cooling the cooling fluid to a temperature below the first temperature, and heating means for heating the cooling fluid, wherein the heating means is upstream relative to the component The location is disposed in the conduit. In particular, a temperature sensor for measuring the temperature of the part of the exposure unit facing the substrate holding device, a combined cooling device and a heating device for precisely controlling the temperature of the cooling fluid, and a The combination of a temperature control system that controls the temperature of the cooling fluid by the signal of the temperature sensor allows to control the temperature of the exposure device with high precision and to connect the substrate holding device with the exposure unit, in particular the exposure unit facing the substrate holding device The temperature difference between the parts is adjusted to less than 4°C, preferably less than 2°C, more preferably less than 1°C.

在一實施例中，該部件包含用於將電磁輻射或粒子投影至樣本上的投影透鏡。在其中冷卻配置包含導管以用於導引冷卻流體穿過導管且其中導管經配置成處於與組件熱接觸中的一實施例中，該等導管經配置 以用於穿過或圍繞投影透鏡輸送冷卻流體。特定而言，在用於帶電粒子之投影透鏡中，透鏡效應藉由需要產生的磁場及/或靜電場建立。在使用中，磁性及/或靜電透鏡亦產生可使用根據此實施例之冷卻配置移除的熱量。 In one embodiment, the component includes a projection lens for projecting electromagnetic radiation or particles onto the sample. In an embodiment wherein the cooling arrangement includes conduits for directing cooling fluid through the conduits and wherein the conduits are configured to be in thermal contact with the components, the conduits are configured for delivery of cooling fluid through or around the projection lens. In particular, in projection lenses for charged particles, the lens effect is created by the magnetic and/or electrostatic fields that need to be generated. In use, the magnetic and/or electrostatic lenses also generate heat that can be removed using the cooling arrangement according to this embodiment.

在一實施例中，該組件包含用於調變電磁輻射或粒子之調變裝置。在其中冷卻配置包含導管以用於導引冷卻流體穿過導管且其中導管經配置成處於與組件熱接觸中的一實施例中，該等導管經配置以用於穿過或圍繞調變裝置輸送冷卻流體。在使用中，調變裝置亦產生可使用根據此實施例之冷卻配置移除的熱量。 In one embodiment, the device includes modulation means for modulating electromagnetic radiation or particles. In an embodiment wherein the cooling arrangement includes conduits for directing cooling fluid through the conduits and wherein the conduits are configured to be in thermal contact with components, the conduits are configured for delivery through or around the modulation device cooling fluid. In use, the modulation device also generates heat that can be removed using the cooling arrangement according to this embodiment.

在一實施例中，該調變裝置包含束熄滅總成，該束熄滅總成包含用於偏轉電磁輻射或粒子之束的束偏轉器及用於阻擋電磁輻射或粒子之該束的束終止器，其中該等導管經配置以用於穿過或圍繞該束終止器輸送該冷卻流體。當電磁輻射或粒子之束經導向至束終止器時，電磁輻射或粒子在極大程度上由束終止器吸收。在使用中，粒子之電磁輻射之吸收亦在束終止器中產生可使用根據此實施例之冷卻配置移除的熱量。 In one embodiment, the modulation device includes a beam extinguishing assembly including a beam deflector for deflecting a beam of electromagnetic radiation or particles and a beam terminator for blocking the beam of electromagnetic radiation or particles , wherein the conduits are configured for conveying the cooling fluid through or around the bundle terminator. When a beam of electromagnetic radiation or particles is directed to the beam terminator, the electromagnetic radiation or particles are largely absorbed by the beam terminator. In use, the absorption of electromagnetic radiation by the particles also produces heat in the beam terminator that can be removed using the cooling arrangement according to this embodiment.

在一實施例中，源為用於帶電粒子之源，且曝光單元包含用於將一或多個帶電粒子束投影至該樣本上的帶電粒子光學系統。在一實施例中，該源經配置以提供多個帶電粒子束，且其中該帶電粒子光學系統經配置以用於將該等多個帶電粒子束中之一或多個投影至該樣本上，其中該等導管之至少一第一部分配置於兩個帶電粒子束之間的區域中。 In one embodiment, the source is a source for charged particles, and the exposure unit includes a charged particle optical system for projecting one or more charged particle beams onto the sample. In one embodiment, the source is configured to provide a plurality of charged particle beams, and wherein the charged particle optical system is configured for projecting one or more of the plurality of charged particle beams onto the sample, wherein at least a first portion of the conduits is disposed in the region between the two charged particle beams.

在一實施例中，該曝光單元包含一或多個溫度感測器，較佳地其中該一或多個溫度感測器中之一個配置在該曝光單元之面對基板夾持裝置的側處。 In one embodiment, the exposure unit comprises one or more temperature sensors, preferably wherein one of the one or more temperature sensors is arranged at the side of the exposure unit facing the substrate holding device .

根據一第九態樣，本發明提供一種用於使用如以上所描述之儀器或實施例處理或將樣本成像之方法，其中溫度穩定配置之調態在該樣本之該處理或成像之前執行，其中該調態包含以下步驟：固化該溫度穩定配置之相變材料之至少部分。當該相變材料吸收熱時，該相變材料之部分液化或熔化；該相變材料之相自固體改變成液體。此吸收的熱可在其中使熱交換材料固化或凝固的調態過程中自相變材料移除；使相變材料之相自液體改變回至固體。在此調態之後，固態相變材料可再次用來吸收熱。 According to a ninth aspect, the present invention provides a method for processing or imaging a sample using an apparatus or embodiment as described above, wherein conditioning of a temperature stable configuration is performed prior to the processing or imaging of the sample, wherein The conditioning includes the step of curing at least a portion of the phase change material in the temperature stable configuration. When the phase change material absorbs heat, a portion of the phase change material liquefies or melts; the phase change material changes from a solid to a liquid. This absorbed heat may be removed from the phase change material during conditioning processes in which the heat exchange material solidifies or solidifies; changing the phase of the phase change material from a liquid back to a solid. After this conditioning, the solid phase change material can be used again to absorb heat.

在一實施例中，該調態進一步包含以下步驟：在該樣本之該處理或成像之前將該溫度穩定配置之該溫度設定在該第二溫度處。該第二溫度為相變材料之熔化溫度，因此相變材料之相自固體改變成液體的溫度。當相變材料之固相及液相兩者存在且處於熱平衡中時，相變材料將在此第二溫度處。因此，為確保至少少量相變材料處於液相中且大多數相變材料處於固相中，溫度穩定配置在第二溫度處，且準備吸收藉由曝光過程誘發的任何熱。 In one embodiment, the conditioning further comprises the step of setting the temperature of the temperature stable configuration at the second temperature prior to the processing or imaging of the sample. This second temperature is the melting temperature of the phase change material, and thus the temperature at which the phase of the phase change material changes from a solid to a liquid. The phase change material will be at this second temperature when both the solid and liquid phases of the phase change material are present and in thermal equilibrium. Thus, to ensure that at least a small amount of the phase change material is in the liquid phase and the majority of the phase change material is in the solid phase, the temperature stable configuration is at the second temperature and is prepared to absorb any heat induced by the exposure process.

在一實施例中，加熱裝置及/或冷卻裝置經控制以建立基板夾持裝置與曝光單元，特定而言該曝光之面對基板夾持裝置的部分之間的溫度差，該溫度差小於4℃，較佳地小於2℃，更佳地小於1℃。 In one embodiment, the heating means and/or the cooling means are controlled to establish a temperature difference between the substrate holding means and the exposure unit, in particular the exposed portion facing the substrate holding means, the temperature difference being less than 4 °C, preferably less than 2 °C, more preferably less than 1 °C.

在一實施例中，儀器在操作期間的溫度在自19℃至22℃之溫度範圍內，較佳地其中第一溫度及第二溫度亦經配置在自19℃至22℃之溫度範圍內。 In one embodiment, the temperature of the instrument during operation is in a temperature range from 19°C to 22°C, preferably wherein the first temperature and the second temperature are also configured in a temperature range from 19°C to 22°C.

根據一第十態樣，本發明提供如以上所描述之儀器或實施例對於處理或將樣本成像之使用。 According to a tenth aspect, the present invention provides the use of an apparatus or embodiment as described above for processing or imaging a sample.

根據一第十一態樣，本發明提供藉助於根據如前文所描述之儀器製造半導體裝置之方法，該方法包含以下步驟：- 將晶圓置放在該基板夾持裝置上且將該晶圓定位在該曝光單元之下游；- 處理該晶圓，包括藉助於來自該源的具有能量之該等電磁輻射或粒子將影像或圖案投影於該晶圓上；以及- 執行後續步驟以便藉助於該處理後晶圓產生半導體裝置。 According to an eleventh aspect, the present invention provides a method of manufacturing a semiconductor device by means of an apparatus according to the foregoing, the method comprising the steps of: placing a wafer on the substrate holding device and placing the wafer on the substrate positioned downstream of the exposure unit; - processing the wafer, including projecting an image or pattern on the wafer by means of the electromagnetic radiation or particles with energy from the source; and - performing subsequent steps in order to use the The processed wafers produce semiconductor devices.

根據一第十二態樣，本發明提供用於藉助於如前文所描述之儀器檢查靶之方法，該方法包含以下步驟：- 將該靶置放在該基板夾持裝置上且將該晶圓定位在該曝光單元之下游；- 將來自該源的具有能量之該等電磁輻射或粒子投影於該靶上；- 在來自該源的具有能量之該等電磁輻射或粒子入射於該靶上時偵測藉由該靶傳輸、發射且/或反射的電磁輻射或帶電粒子；以及- 執行後續步驟以便藉助於來自偵測帶電粒子之該步驟的資料檢查該靶。 According to a twelfth aspect, the present invention provides a method for inspecting a target by means of an instrument as described above, the method comprising the steps of: - placing the target on the substrate holder and the wafer positioned downstream of the exposure unit; - projecting the electromagnetic radiation or particles with energy from the source on the target; - when the electromagnetic radiation or particles with energy from the source is incident on the target detecting electromagnetic radiation or charged particles transmitted, emitted and/or reflected by the target; and - performing subsequent steps to inspect the target with the aid of data from the step of detecting charged particles.

以上關於第一態樣所提到的實施例根據其他態樣可亦適合地應用於本發明中。 The embodiments mentioned above with respect to the first aspect can also be suitably applied in the present invention according to other aspects.

只要可能，說明書中所描述且展示的各種態樣及特徵可單獨地應用。可使此等單獨態樣，特定而言在所附從屬請求項中所描述的態樣及特徵成為分開的專利申請案之主題。 Wherever possible, the various aspects and features described and illustrated in the specification can be applied individually. These individual aspects, in particular the aspects and features described in the appended dependent claims, may be made the subject of a separate patent application.

1:基板夾持裝置 1: Substrate clamping device

1’:基板夾持裝置 1': Substrate clamping device

1”:基板夾持裝置 1": Substrate clamping device

2:夾持板 2: Clamping plate

2’:夾持板 2': Clamping plate

2”:夾持板 2": Clamping Plate

3:第一側 3: First side

4:基底板 4: base plate

4’:基底板 4': base plate

4”:基底板 4": base plate

5:間隙 5: Gap

5’:間隙 5': Gap

5”:間隙 5": Clearance

6:第二側 6: Second side

7:支撐件 7: Supports

8:小滴 8: Droplets

9:袋部 9: bag part

9’:袋部 9': bag part

11:基板夾持裝置 11: Substrate clamping device

12:夾持板 12: Clamping plate

14:基底板 14: base plate

17:支撐件 17: Supports

18:小滴 18: Droplets

19:袋部 19: Bag Department

21:基板夾持裝置 21: Substrate clamping device

22:夾持板 22: Clamping plate

23:夾持板 23: Clamping plate

24:基底板 24: base plate

25:間隙 25: Gap

27:支撐件 27: Supports

28:小滴 28: Droplets

29:袋部 29: Bag Department

31:基板夾持裝置 31: Substrate clamping device

31’:基板夾持裝置 31': Substrate clamping device

32:夾持板 32: Clamping plate

32’:夾持板 32': Clamping plate

33:第一側 33: First side

34:基底板 34: base plate

34’:基底板 34': base plate

35:間隙 35: Gap

35’:間隙 35': Gap

36:第二側 36: Second side

36’:第二側 36': second side

37:支撐件 37: Supports

37’:支撐件 37': Supports

38:小滴 38: Droplets

38’:小滴 38': droplets

39:O環 39: O Ring

39’:O環 39': O ring

41:孔 41: Hole

51:基板夾持裝置 51: Substrate clamping device

52:夾持板 52: Clamping plate

53:第一側 53: First side

54:基底板 54: base plate

55:間隙 55: Gap

56:第二側 56: Second side

57:支撐件 57: Supports

58:小滴 58: Droplets

59:袋部 59: Bag Department

60:彈性覆蓋板 60: Elastic cover plate

61:台階 61: Steps

62:環圈 62: Ring

63:表面 63: Surface

71:膠連接 71: glue connection

91:圓錐形邊緣 91: Conical edge

92:袋部 92: Bag Department

101:帶電粒子束源 101: Charged Particle Beam Sources

102:束準直系統 102: Beam Collimation System

103:孔徑陣列 103: Aperture Array

104:冷凝器透鏡陣列 104: Condenser Lens Array

105:束熄滅裝置陣列 105: Array of beam extinguishing devices

108:束終止器陣列 108: Beam Terminator Array

109:束偏轉器陣列 109: Beam Deflector Array

110:投影透鏡陣列 110: Projection lens array

130:晶圓 130: Wafer

141:孔 141: Hole

142:排氣孔 142: exhaust hole

150:示意性流程圖 150: Schematic flow chart

151:步驟 151: Steps

152:步驟 152: Steps

153:步驟 153: Steps

160:示意性流程圖 160: Schematic flow chart

161:步驟 161: Steps

162:步驟 162: Steps

163:步驟 163: Steps

164:步驟 164: Steps

200:微影術儀器 200: Lithography Instruments

201:照明光學模組 201: Lighting Optical Module

202:冷凝器透鏡模組 202: Condenser lens module

203:束轉換模組 203: Beam Conversion Module

204:投影光學模組 204: Projection Optical Module

205:對準內副架 205: Align the inner sub-frame

206:對準外副架 206: Align the outer sub-frame

207:振動阻尼機架 207: Vibration Damping Rack

208:框架 208: Frame

209:基板夾持裝置 209: Substrate clamping device

209’:第一側 209’: first side

210:卡盤 210: Chuck

211:短衝程級段 211: Short stroke stage

212:長衝程級段 212: Long Stroke Stage

215:阿姆科鐵(μ金屬)屏蔽層 215: Amco Iron (μ Metal) Shield

220:基底板 220: base plate

221:框架部件 221: Frame Parts

230:真空腔室 230: Vacuum Chamber

250:量測裝置 250: Measuring device

251:鏡 251: Mirror

252:光束 252: Beam

300:改良式投影透鏡總成 300: Improved projection lens assembly

301:第一電極 301: first electrode

302:第二電極 302: Second electrode

303:第一末端 303: First End

304:輸入連接 304: input connection

305:輸出連接 305: Output connection

306:導管之第二部分 306: Catheter Part 2

307:導管之第一部分 307: Catheter Part 1

308:束終止器陣列 308: Beam Terminator Array

309:導管 309: Catheter

310:周圍側邊緣 310: Peripheral side edge

313:貫穿開口 313: Through opening

330:電氣傳導性圓周壁 330: Electrically Conductive Circumferential Wall

340:支撐元件 340: Support element

341:孔 341: Hole

341’:孔 341': hole

370:靶 370: Target

400:投影透鏡總成 400: Projection lens assembly

401:第一電極 401: First electrode

402:第二電極 402: Second electrode

403:第一末端 403: First End

404:導管 404: Catheter

405:導管 405: Catheter

406:導管 406: Catheter

406’:導管 406’: Catheter

408:束終止器陣列 408: Beam Terminator Array

409:導管 409: Catheter

410:覆蓋元件 410: Cover Components

413:貫穿開口 413: Through opening

430:電氣傳導性圓周壁 430: Electrically Conductive Circumferential Wall

440:支撐元件 440: Support element

450:冷卻裝置 450: Cooling device

451:熱交換迴路 451: heat exchange circuit

470:加熱裝置 470: Heating device

480:基板夾持裝置 480: Substrate clamping device

481:夾持板 481: Clamping plate

482:基底板 482: Base Plate

483:相變材料 483: Phase Change Materials

490:溫度控制系統 490: Temperature Control System

541:孔 541: Hole

542:排氣孔 542: exhaust hole

591:底部表面 591: Bottom Surface

592:上袋部部分 592: Upper pocket part

593:下袋部部分 593: Lower pocket part

A-A:線 A-A: Line

OA:中心軸線/光學軸線 OA: central axis/optical axis

d:厚度 d: thickness

d1:厚度 d1: thickness

d2:厚度 d2: thickness

h:同度 h: same degree

w:寬度 w: width

w’:寬度 w': width

s:距離 s: distance

T1:第一溫度感測器 T1: The first temperature sensor

T2:第二溫度感測器 T2: Second temperature sensor

T3:第一溫度感測器 T3: The first temperature sensor

T4:第四溫度感測器 T4: Fourth temperature sensor

將基於隨附圖式中所示之示範性實施例說明本發明，在圖式中：圖1為基板夾持裝置的示意性俯視圖；圖2為沿圖1中之線A-A的示意性部分橫截面；圖3A、圖3B及圖3C示意性地展示用於製造基板夾持裝置之方法之步驟；圖4A及圖4B為基板夾持裝置之第二示範性實施例及第三示範性實施例的示意性部分橫截面；圖5為基板夾持裝置之第四示範性實施例的示意性部分橫截面；圖6為圖5之基板夾持裝置之基底板的示意性部分俯視圖；圖7為基板夾持裝置之第五示範性實施例的示意性部分橫截面；圖8為基板夾持裝置之第六示範性實施例的示意性部分橫截面；圖9A、圖9B及圖9C示意性地展示用於製造根據如圖8中所示之第六實施例之基板夾持裝置之替代性方法的步驟；圖10為基板夾持裝置之第七示範性實施例的示意性部分橫截面；圖11示意性地展示用於處理或將樣本成像之儀器，其中該儀器包含本發明之基板夾持裝置；圖12示意性地展示例如用於在如示意性地展示於圖11中的儀器中使用之投影透鏡系統總成之實施例的橫截面；圖13示意性地展示用於在如示意性地展示於圖12中的投影透鏡系統中使用之冷卻裝置；圖14示意性地展示儀器之一部分，該儀器包含：投影透鏡系統，其包 含冷卻配置；及基板夾持裝置，其包含溫度穩定配置，圖15例示用於製造半導體裝置之示範性過程，且圖16例示用於檢查靶之示範性過程。 The present invention will be described based on an exemplary embodiment shown in the accompanying drawings, in which: FIG. 1 is a schematic top view of a substrate clamping device; FIG. 2 is a schematic partial transverse view along the line A-A in FIG. 1 Cross-sections; Figures 3A, 3B and 3C schematically show steps of a method for manufacturing a substrate clamping device; Figures 4A and 4B are second and third exemplary embodiments of the substrate clamping device Fig. 5 is a schematic partial cross-section of the fourth exemplary embodiment of the substrate holding device; Fig. 6 is a schematic partial top view of the base plate of the substrate holding device of Fig. 5; A schematic partial cross-section of a fifth exemplary embodiment of a substrate holding device; FIG. 8 is a schematic partial cross-section of a sixth exemplary embodiment of a substrate holding device; FIGS. 9A , 9B and 9C schematically Shows the steps of an alternative method for manufacturing a substrate clamping device according to the sixth embodiment as shown in FIG. 8; FIG. 10 is a schematic partial cross-section of a seventh exemplary embodiment of the substrate clamping device; FIG. 11 shows schematically an apparatus for processing or imaging a sample, wherein the apparatus comprises a substrate holding device of the invention; FIG. 12 shows schematically, for example, for use in the apparatus as shown schematically in FIG. 11 A cross-section of an embodiment of the projection lens system assembly of the , the instrument contains: a projection lens system, which includes Including a cooling configuration; and a substrate clamping device including a temperature stabilizing configuration, FIG. 15 illustrates an exemplary process for fabricating a semiconductor device, and FIG. 16 illustrates an exemplary process for inspecting a target.

圖1展示根據本發明之基板夾持裝置之第一實例的俯視圖，且圖2展示沿圖1中之線A-A的第一實例的部分橫截面。基板夾持裝置1包含夾持板2，該夾持板具有用於夾持基板(未示出)之第一側3。基板夾持裝置1進一步包含基底板4，該基底板配置在距夾持板2一距離處且配置在該夾持板2之背離第一側3的第二側6處。在基底板4與夾持板2之間，提供間隙5，該間隙在大體上平行於夾持板2之第一側3的方向上延伸。一陣列支撐件7配置在夾持板2與基底板4之間，該等支撐件界定夾持板2與基底板4之間的距離，且因此界定間隙5之寬度w。夾持板2、基底板4及支撐件7提供用於提供間隙5中之熱吸收材料的框架，該熱吸收材料在使用中被配置來用於自配置在基板夾持裝置1之第一側3上的基板移除熱。 FIG. 1 shows a top view of a first example of a substrate clamping device according to the present invention, and FIG. 2 shows a partial cross-section of the first example along the line A-A in FIG. 1 . The substrate clamping device 1 comprises a clamping plate 2 having a first side 3 for clamping a substrate (not shown). The substrate clamping device 1 further comprises a base plate 4 arranged at a distance from the clamping plate 2 and at a second side 6 of the clamping plate 2 facing away from the first side 3 . Between the base plate 4 and the clamping plate 2 a gap 5 is provided which extends in a direction substantially parallel to the first side 3 of the clamping plate 2 . An array of supports 7 are arranged between the clamping plate 2 and the base plate 4 , the supports defining the distance between the clamping plate 2 and the base plate 4 and thus the width w of the gap 5 . The clamping plate 2, the base plate 4 and the support 7 provide a frame for providing a heat absorbing material in the gap 5 which, in use, is configured for self-positioning on the first side of the substrate clamping device 1 3 on the substrate to remove heat.

夾持板2包含例如Si板。基底板4包含例如碳化矽板，該碳化矽板具有大體上與矽之膨脹係數相同的膨脹係數。另外，碳化矽為大體上惰性的且允許使用大範圍的熱吸收材料。此外，碳化矽具有高熱傳導率，該高熱傳導率允許經由基底板4冷卻基板夾持裝置1，且沿基底板4提供實質恆定溫度。 The clamping plate 2 includes, for example, a Si plate. The base plate 4 includes, for example, a silicon carbide plate having an expansion coefficient substantially the same as that of silicon. Additionally, silicon carbide is substantially inert and allows the use of a wide range of heat absorbing materials. Furthermore, silicon carbide has a high thermal conductivity that allows cooling of the substrate clamping device 1 through the base plate 4 and provides a substantially constant temperature along the base plate 4 .

支撐件7包含例如鈦支撐件，該等鈦支撐件為無磁性的。當將基板夾持裝置1使用於帶電粒子處理或成像儀器中時，無磁性支撐件為有利的。儘管支撐件7可夾緊在夾持板2與基底板4之間，但是較佳的是， 支撐件7固定地附接至夾持板2之第二側6及/或附接至基底板4，如以下將參考圖2、圖3A、圖3B及圖3C更詳細地解釋。 The supports 7 comprise eg titanium supports, which are non-magnetic. The absence of magnetic supports is advantageous when the substrate holding device 1 is used in charged particle processing or imaging apparatus. Although the support 7 may be clamped between the clamping plate 2 and the base plate 4, preferably, The support 7 is fixedly attached to the second side 6 of the clamping plate 2 and/or to the base plate 4, as will be explained in more detail below with reference to Figures 2, 3A, 3B and 3C.

根據本發明，熱吸收材料之一陣列小滴8配置在夾持板2與基底板4之間。液體及/或固體小滴8經配置來橋接基底板4與夾持板2之間的間隙5；因此小滴8經配置以接觸基底板4及夾持板2兩者。小滴8經配置成彼此間隔分開，經配置成在沿間隙5之方向上彼此鄰近，且經配置成大體上與支撐件7間隔分開。小滴8在大體上垂直於夾持板2之第一側3的方向上由夾持板2及基底板4限制。另外，小滴8經配置以致能該等小滴8在沿基底板4與夾持板2之間的間隙5之方向上之膨脹。如圖2中示意性地所示，小滴8配置成處於與夾持板2及基底板4(熱)接觸中。較佳地，小滴8包含具有在基板處理儀器至少在該基板之處理期間之溫度處或附近，或在基板成像儀器至少在該基板之成像期間之溫度處或附近的熔化溫度或熔化範圍之材料。熱移除藉由使用小滴8之相轉變，尤其熔化來提供。因為小滴8經配置以致能該等小滴8在沿間隙5之方向上之膨脹，小滴8在自固體變成液體時的收縮或膨脹反之亦然大體上對包含該夾持板2、該基底板4及支撐件7之組件之尺寸無效應。 According to the invention, an array of droplets 8 of heat absorbing material is arranged between the clamping plate 2 and the base plate 4 . The liquid and/or solid droplets 8 are configured to bridge the gap 5 between the base plate 4 and the clamp plate 2 ; thus the droplets 8 are configured to contact both the base plate 4 and the clamp plate 2 . The droplets 8 are configured to be spaced apart from each other, configured to be adjacent to each other in the direction along the gap 5 , and configured to be generally spaced apart from the support 7 . The droplets 8 are confined by the clamping plate 2 and the base plate 4 in a direction substantially perpendicular to the first side 3 of the clamping plate 2 . In addition, the droplets 8 are configured so as to enable expansion of the droplets 8 in the direction along the gap 5 between the base plate 4 and the clamping plate 2 . As shown schematically in FIG. 2 , the droplets 8 are arranged in (thermal) contact with the clamping plate 2 and the base plate 4 . Preferably, the droplets 8 comprise a melting temperature or range of melting at or near the temperature of the substrate processing instrument at least during processing of the substrate, or at or near the temperature of the substrate imaging instrument at least during imaging of the substrate. Material. Heat removal is provided by phase inversion, especially melting, using droplets 8 . Because the droplets 8 are configured so as to enable expansion of the droplets 8 in the direction along the gap 5, the shrinkage or expansion of the droplets 8 when changing from solid to liquid and vice versa is generally important to the inclusion of the clamping plate 2, the The dimensions of the assembly of base plate 4 and support 7 have no effect.

熱吸收材料較佳地以具有近似15mm之直徑及近似0,8mm之厚度的平坦小滴8之陣列配置。使用具有近似15mm之直徑的小滴8允許將一陣列支撐件7提供在該等小滴之間，該等支撐件7經配置成彼此足夠接近，以提供夾持板2之高度平坦的第一側3。在此特定實例中，支撐件7經配置以便提供具有近似0,8mm之寬度w的間隙5。 The heat absorbing material is preferably arranged in an array of flat droplets 8 having a diameter of approximately 15 mm and a thickness of approximately 0,8 mm. The use of droplets 8 having a diameter of approximately 15 mm allows to provide between the droplets an array of supports 7 which are arranged close enough to each other to provide a first, highly flat gripping plate 2. side 3. In this particular example, the support 7 is configured so as to provide a gap 5 having a width w of approximately 0,8 mm.

在此第一實例中，基底板4具備一陣列袋部9，該等袋部經 配置為基底板4之面對間隙5的表面中之淺壓痕或空腔。此第一實例之袋部9大體上成形為圓錐形錘台。例如，該圓錐之下降斜率91可為近似15度，且在袋部9之中心處，大體上平坦區域經配置。小滴8經配置以接觸基底板4及夾持板2兩者。袋部9之圓錐形邊緣91將大體上固定熱吸收材料之小滴8之位置。另外，袋部9之圓錐形邊緣91及小滴8之液相中之表面張力提供定位力以將液體小滴8大體上保持在袋部9中。不需要其他部分來固定小滴8之位置。此允許將此第一實例之基板夾持裝置1中之小滴8配置成彼此更接近，此舉提供具有熱吸收材料的基底板4及夾持板2之區域之適合的覆蓋。由於袋部9之中心中的大體上平坦區域，第一實例之基板夾持裝置1中之袋部9為淺的，此減少需要的熱吸收材料之量。 In this first example, the base plate 4 is provided with an array of pockets 9 which are Configured as a shallow indentation or cavity in the surface of the base plate 4 facing the gap 5 . The pocket 9 of this first example is generally shaped as a conical hammer. For example, the descending slope 91 of the cone may be approximately 15 degrees, and at the center of the pocket 9, a generally flat area is configured. The droplets 8 are configured to contact both the base plate 4 and the clamping plate 2 . The conical edge 91 of the pocket 9 will substantially fix the position of the droplet 8 of heat absorbing material. In addition, the conical edge 91 of the pocket portion 9 and the surface tension in the liquid phase of the droplet 8 provide a positioning force to substantially retain the liquid droplet 8 in the pocket portion 9 . No other part is needed to fix the position of droplet 8. This allows the droplets 8 in the substrate clamping device 1 of this first example to be arranged closer to each other, which provides suitable coverage of the area of the base plate 4 and the clamping plate 2 with heat absorbing material. Due to the generally flat area in the center of the pocket 9, the pocket 9 in the substrate holding device 1 of the first example is shallow, which reduces the amount of heat absorbing material required.

如圖2中所示，基底板4具備一陣列孔41，且一系列支撐件中每一支撐件7之第一末端配置在該等孔41中之一個中且經由膠連接固定於該孔41中。每一支撐件7之與該第一末端相對的第二末端藉助於膠連接固定至夾持板2。 As shown in FIG. 2 , the base plate 4 is provided with an array of holes 41 , and the first end of each support 7 in the series of supports is disposed in one of the holes 41 and fixed to the hole 41 by glue connection middle. The second end of each support 7 opposite the first end is fixed to the clamping plate 2 by means of a glue connection.

圖3A、圖3B及圖3C示意性地展示用於裝配基板夾持裝置1，尤其用於裝配根據圖2之實施例之基板夾持裝置之步驟。並且根據如以下參考圖4A、圖4B、圖5、圖7及圖10所描述之實施例之基板夾持裝置可以此方式裝配。 FIGS. 3A , 3B and 3C schematically show steps for assembling the substrate clamping device 1 , in particular the substrate clamping device according to the embodiment of FIG. 2 . And substrate clamping devices according to embodiments as described below with reference to FIGS. 4A , 4B, 5, 7 and 10 can be assembled in this way.

首先，如圖3A中所示，提供基底板4，該基底板包含一陣列袋部9。鄰近於此等袋部9，提供孔41以用於將支撐件7安裝於該等孔中。另外，夾持板2具備一系列支撐件7，該等支撐件固定至夾持板2之背對第一側3的第二側6，以用於至少在使用中夾持基板。支撐件7經配置以大體 上垂直於第二側6延伸，且經由膠連接71固定至該第二側6。 First, as shown in FIG. 3A , a base plate 4 is provided, which includes an array of pockets 9 . Adjacent to these pockets 9, holes 41 are provided for mounting the supports 7 in these holes. In addition, the clamping plate 2 is provided with a series of supports 7 fixed to a second side 6 of the clamping plate 2 facing away from the first side 3 for clamping the substrate, at least in use. The support 7 is configured to substantially The upper portion extends perpendicular to the second side 6 and is fixed to the second side 6 via a glue connection 71 .

隨後，液態熱吸收材料之小滴8經配置在袋部9中，如圖3B中示意性地所示。在大體上相同大小之每一袋部9中，施配大體上相同體積的熱吸收材料。較佳地，熱吸收材料展現相較於與夾持板2及/或基底板4之面對間隙5的表面之黏合的更大內聚力。由於表面張力，液體小滴8呈近乎球形形狀。 Subsequently, droplets 8 of liquid heat absorbing material are arranged in the pockets 9, as schematically shown in Fig. 3B. In each pocket 9 of substantially the same size, substantially the same volume of heat absorbing material is dispensed. Preferably, the heat absorbing material exhibits greater cohesion than its adhesion to the surfaces of the clamping plate 2 and/or the base plate 4 facing the gap 5 . Due to the surface tension, the liquid droplets 8 have an almost spherical shape.

接下來，具有支撐件7之夾持板2經朝向基底板4移動，且支撐件7經定位在孔41中。夾持板2向下移動，直至已到達夾持板2與基底板4之間的所要距離w。在此位置中，使小滴8在基底板4與夾持板2之間平坦，如圖3C中所示。熱吸收材料之表面張力提供且維持小滴8接觸夾持板2及基底板4兩者。 Next, the clamping plate 2 with the supports 7 is moved towards the base plate 4 and the supports 7 are positioned in the holes 41 . The clamping plate 2 is moved downward until the desired distance w between the clamping plate 2 and the base plate 4 has been reached. In this position, the droplet 8 is flattened between the base plate 4 and the clamping plate 2, as shown in Figure 3C. The surface tension of the heat absorbing material provides and maintains the droplets 8 in contact with both the clamping plate 2 and the base plate 4 .

隨後，該等支撐件7中一或多個經由膠連接固定於對應孔41中，該膠連接提供於孔41與延伸至該孔41中的支撐件7之間的圓周間隙中。 Subsequently, one or more of the supports 7 are fixed in the corresponding holes 41 via glue connections provided in the circumferential gap between the holes 41 and the supports 7 extending into the holes 41 .

在使用之前，裝配的基板夾持裝置1經配置於在熱吸收相變材料之凝固溫度以下的溫度處的「冷」環境中，且液體小滴8將大體上以如圖3C中所示之形狀固化。因此，固體小滴8橋接基底板4與夾持板2之間的間隙5。現在，基板夾持裝置1準備使用。 Before use, the assembled substrate clamping device 1 is configured in a "cold" environment at a temperature below the freezing temperature of the heat absorbing phase change material, and the liquid droplets 8 will be substantially as shown in Figure 3C The shape is solidified. Thus, the solid droplets 8 bridge the gap 5 between the base plate 4 and the clamping plate 2 . Now, the substrate holding device 1 is ready for use.

在先前第一實例中，用於夾持固體及/或液體小滴8之袋部9配置於基底板4中，如以上所描述。然而，在基板夾持裝置1’之第二實例中，袋部9’配置於夾持板2’中，與具有面對間隙5’之大體上平坦表面的基底板4’結合，如圖4A中示意性地所示。 In the previous first example, pockets 9 for holding solid and/or liquid droplets 8 were arranged in the base plate 4, as described above. However, in the second example of the substrate clamping device 1', the pockets 9' are arranged in the clamping plate 2' in combination with the base plate 4' having a substantially flat surface facing the gap 5', as shown in Fig. 4A shown schematically in .

替代地，在基板夾持裝置1”之第三實例中，基底板4”及夾持板2”之面對間隙5”的兩個表面具備袋部92、93，如圖4B中示意性地所示。在此實施例中，與根據第一實例及第二實例之基板夾持裝置1、1’之袋部9、9’相比，基底板4”及夾持板2”之面對間隙5”的表面中之形成袋部92、93的壓痕或空腔可更淺且不太深。 Alternatively, in the third example of the substrate clamping device 1", the two surfaces of the base plate 4" and the clamping plate 2" facing the gap 5" are provided with pockets 92, 93, as schematically shown in Fig. 4B shown. In this embodiment, compared to the pockets 9, 9' of the substrate clamping devices 1, 1' according to the first and second examples, the facing gap 5" of the base plate 4" and the clamping plate 2" The indentations or cavities forming pockets 92, 93 may be shallower and less deep in the surface of the .

圖5為基板夾持裝置11之第四示範性實施例的示意性部分橫截面。圖6為圖5之基板夾持裝置之基底板14的示意性部分俯視圖。在此第四實例中，基底板14具備一陣列袋部19，該等袋部大體上成形為圓錐。例如、該圓錐之下降斜率可為近似15度。小滴18經配置於該等袋部19中，且經配置來橋接基底板14與夾持板12之間的間隙。袋部19之圓錐形狀將大體上固定熱吸收材料之液體及/或固體小滴18之位置。另外，袋部19之圓錐形狀及處於液相中的熱吸收材料之表面張力提供力以大體上將液體小滴18保持在袋部19之中心中。不需要其他部分來固定小滴18之位置。 FIG. 5 is a schematic partial cross-section of a fourth exemplary embodiment of the substrate clamping device 11 . FIG. 6 is a schematic partial top view of the base plate 14 of the substrate holding device of FIG. 5 . In this fourth example, the base plate 14 is provided with an array of pockets 19 that are generally conical shaped. For example, the descending slope of the cone may be approximately 15 degrees. Droplets 18 are arranged in the pockets 19 and are arranged to bridge the gap between the base plate 14 and the clamping plate 12 . The conical shape of the pockets 19 will generally fix the position of the liquid and/or solid droplets 18 of heat absorbing material. Additionally, the conical shape of the pocket portion 19 and the surface tension of the heat absorbing material in the liquid phase provide a force to substantially retain the liquid droplet 18 in the center of the pocket portion 19 . No other parts are needed to fix the position of the droplet 18.

另外在此第四實例中，基底板14具備一陣列孔141，且一系列支撐件中每一支撐件17在一側上配置於該等孔141中之一個中且經由膠連接固定於該孔141中。支撐件17之另一側固定至夾持板12。 Also in this fourth example, the base plate 14 is provided with an array of holes 141, and each support 17 in the series of supports is disposed on one side in one of the holes 141 and fixed to the hole via glue connection 141. The other side of the support 17 is fixed to the clamping plate 12 .

另外，基底板14可具備排氣孔142，該等排氣孔大體上在袋部19之中心流出。排氣孔142經配置來防止空氣包括在小滴18下方。 In addition, the base plate 14 may be provided with vent holes 142 that flow out substantially in the center of the pocket portion 19 . The vents 142 are configured to prevent air from being included under the droplets 18 .

圖7為基板夾持裝置21之第五示範性實施例的示意性部分橫截面。在此第五實例中，基底板24具備一陣列袋部29，該等袋部大體上成形為具有大體上圓形底部區域的直圓柱體。小滴28配置在袋部29中，且接觸基底板24中之袋部29之圓形底部區域及夾持板22兩者。為允許小滴 28至少在沿間隙25之方向上膨脹，小滴28之體積經配置，使得小滴28在平行於袋部29之底部區域之方向上的直徑小於圓柱形袋部29之直徑。圓柱形袋部29將大體上建立處於固體中及處於液相中的熱吸收材料之小滴28之位置。不需要其它部分來大體上固定小滴28之位置。此實例之優點在於基底板24之無袋部29經配置的表面可經配置成接近於夾持板22。因此，夾持板22可以極短的支撐件27，或甚至完全不用支撐件連接至基底板24，此舉將得到極具剛性的基板夾持裝置21。 FIG. 7 is a schematic partial cross-section of a fifth exemplary embodiment of the substrate holding device 21 . In this fifth example, the base plate 24 is provided with an array of pockets 29 that are generally shaped as right cylinders with a generally circular bottom area. The droplets 28 are disposed in the pockets 29 and contact both the circular bottom area of the pockets 29 in the base plate 24 and the clamping plate 22 . to allow droplets 28 expands at least in the direction along the gap 25 , the volume of the droplet 28 is configured such that the diameter of the droplet 28 in a direction parallel to the bottom region of the pocket 29 is smaller than the diameter of the cylindrical pocket 29 . The cylindrical pocket 29 will generally establish the location of the droplets 28 of heat absorbing material in the solid and in the liquid phase. No other parts are required to substantially fix the position of the droplet 28 . An advantage of this example is that the configured surface of the pocketless portion 29 of the base plate 24 can be configured close to the clamp plate 22 . Thus, the clamping plate 22 can be connected to the base plate 24 with very short supports 27, or even no supports at all, which results in a very rigid substrate clamping device 21.

在基板夾持裝置31之第六實例中，如圖8中示意性地所示，小滴38配置在O環39內側，該O環由諸如橡膠例如Viton®的可撓性或彈性材料製成。該等小滴38中每一個配置在O環39內側，該O環提供小滴38之側向圍阻，且由於該O環39之可撓性或彈性材料而允許該等小滴38在沿間隙35之方向上之收縮及膨脹。 In a sixth example of the substrate holding device 31, as shown schematically in Figure 8, the droplets 38 are arranged inside an O-ring 39, which is made of a flexible or elastic material such as rubber, eg Viton® . Each of the droplets 38 is disposed inside an O-ring 39 which provides lateral containment of the droplets 38 and allows the droplets 38 to move along the edge due to the flexible or elastic material of the O-ring 39 Contraction and expansion in the direction of the gap 35 .

較佳地，O環39之厚度小於夾持板32與基底板34之間的間隙35之寬度w’。此允許裝配包含夾持板32、基底板34及支撐件37的基板夾持裝置31且獲得具有所需要的寬度w’之間隙35而無O環39之干擾。避免了O環39接觸夾持板32及基底板34兩者或在夾持板32與基底板34之間壓縮，因為此可對夾持板32之第一側33之平坦度具有負面影響。 Preferably, the thickness of the O-ring 39 is smaller than the width w' of the gap 35 between the clamping plate 32 and the base plate 34 . This allows to assemble the substrate clamping device 31 comprising the clamping plate 32, the base plate 34 and the support 37 and obtain a gap 35 with the required width w' without the interference of the O-ring 39. O-ring 39 is prevented from contacting or compressing between clamp plate 32 and base plate 34 , as this can negatively affect the flatness of first side 33 of clamp plate 32 .

如圖8中所指示，間隙35在基板夾持裝置31之周圍側邊緣310處大體上敞開。間隙35甚至可為大體上沿基板夾持裝置31之完整周圍側邊緣310大體上敞開的。因此，間隙35包含至基板夾持裝置31外側的敞開連接。間隙35內側的空氣壓力或真空壓力大體上等於基板夾持裝置31外側的空氣壓力或真空壓力。 As indicated in FIG. 8 , the gap 35 is substantially open at the peripheral side edge 310 of the substrate clamping device 31 . The gap 35 may even be substantially open along substantially the entire peripheral side edge 310 of the substrate clamping device 31 . Thus, the gap 35 contains an open connection to the outside of the substrate clamping device 31 . The air pressure or vacuum pressure inside the gap 35 is substantially equal to the air pressure or vacuum pressure outside the substrate holding device 31 .

在圖9A、圖9B及圖9C中示意性地展示用於構造根據圖8之實施例之基板夾持裝置31’之方法之步驟，具有在此實例中支撐件37’配置於基底板34’之一陣列孔341’中的此差異。 The steps of a method for constructing a substrate clamping device 31 ′ according to the embodiment of FIG. 8 are shown schematically in FIGS. 9A , 9B and 9C, with supports 37 ′ arranged in this example on the base plate 34 ′ This difference in one of the array holes 341'.

首先，提供包含一陣列孔341’的基底板34’。一系列支撐件37’經提供，且該系列支撐件中之每一支撐件37’配置於該等孔341’中之一個中且較佳地經由膠連接固定於該孔341’中。 First, a base plate 34' containing an array of holes 341' is provided. A series of supports 37' are provided, and each support 37' of the series is arranged in one of the holes 341' and is preferably fixed in the hole 341' by a glue connection.

隨後，內側具有熱吸收材料之固體丸或小滴38’的O環39’之總成配置在支撐件37’之間，如圖9A中示意性地所示。應注意，小滴38’及O環39’之總成之厚度d小於支撐件37’突出基底板34’的高度h。 Subsequently, an assembly of O-rings 39' with solid pellets or droplets 38' of heat absorbing material on the inside is disposed between supports 37', as shown schematically in Figure 9A. It should be noted that the combined thickness d of droplet 38' and O-ring 39' is less than the height h at which support 37' protrudes from base plate 34'.

接下來，夾持板32’經配置於支撐件37’之頂部上，且較佳地經由膠連接固定至該等支撐件37’。如圖9B中示意性地指示，夾持板32’在O環39’及熱吸收材料之固體小滴38’之總成上方具有間隙的情況下配置於支撐件37’之頂部上。 Next, clamping plates 32' are arranged on top of the supports 37' and are preferably fixed to the supports 37' via glue connections. As schematically indicated in Figure 9B, the clamping plate 32' is disposed on top of the support 37' with a gap above the O-ring 39' and the assembly of solid droplets 38' of heat absorbing material.

隨後，熱吸收材料之固體小滴38’例如藉由將總成配置於在熔化溫度以上的溫度處的爐中熔化。由於熱吸收材料之液體小滴38’中之表面張力，液體小滴38’將呈更球形形狀，如圖9C中示意性地指示，且接觸夾持板32’之第二側36’。小滴38’現在經配置以橋接基底板34’與夾持板32’之間的間隙35。 Subsequently, the solid droplets 38' of heat absorbing material are melted, for example, by placing the assembly in a furnace at a temperature above the melting temperature. Due to the surface tension in the liquid droplet 38' of the heat absorbing material, the liquid droplet 38' will take on a more spherical shape, as schematically indicated in Figure 9C, and contact the second side 36' of the clamping plate 32'. The droplet 38' is now configured to bridge the gap 35 between the base plate 34' and the clamping plate 32'.

接下來，裝配的基板夾持裝置31’經配置在熱吸收材料之凝固溫度以下的溫度處之「冷」環境中，且液體小滴38’將大體上以如圖9C中所示之形狀固化。因此，固體小滴38’充滿間隙35’且接觸基底板34’及夾持板32’兩者。現在，基板夾持裝置31’準備使用。 Next, the assembled substrate holding device 31' is configured in a "cold" environment at a temperature below the freezing temperature of the heat absorbing material, and the liquid droplet 38' will solidify generally in the shape shown in Figure 9C . Thus, solid droplets 38' fill gaps 35' and contact both base plate 34' and clamping plate 32'. Now, the substrate holding device 31' is ready for use.

圖10為基板夾持裝置51之第七示範性實施例的示意性部分橫截面。在此第七實例中，基底板54具備一陣列袋部59，該等袋部大體上成形為具有大體上圓形底部表面591之直圓柱體。袋部59包含具有第一直徑之第一或上袋部部分592，及具有小於第一直徑的第二直徑之第二或下袋部部分593。第二袋部部分593大體上中心地配置在第一袋部部分592中。此得到配置在該袋部59內側的輪緣或台階61，該輪緣或台階沿該袋部59之圓周側壁延伸。 FIG. 10 is a schematic partial cross-section of a seventh exemplary embodiment of a substrate holding device 51 . In this seventh example, the base plate 54 is provided with an array of pockets 59 that are generally shaped as right cylinders with a generally circular bottom surface 591 . Pocket 59 includes a first or upper pocket portion 592 having a first diameter, and a second or lower pocket portion 593 having a second diameter smaller than the first diameter. The second pocket portion 593 is disposed generally centrally in the first pocket portion 592 . This results in a rim or step 61 disposed on the inside of the pocket 59 , which rim or step extends along the circumferential side wall of the pocket 59 .

該陣列袋部中每一袋部59包含彈性部件，尤其彈性覆蓋板60，該彈性部件跨過該袋部59且配置成與該袋部59之底部表面591間隔分開。彈性覆蓋板60具有小於第一直徑但大於第二直徑的直徑。因此，彈性覆蓋板60之圓周邊緣擱置在該輪緣或台階61之頂部上。彈性覆蓋板60提供用於藉由覆蓋板60之至少中心部分朝向袋部59之底部表面591之彎曲或撓屈來佔據在大體上垂直於間隙55之方向上的任何殘餘膨脹之構件。較佳地，彈性覆蓋板60為鈦板。 Each pocket 59 of the array of pockets includes a resilient member, particularly a resilient cover panel 60 , which spans the pocket 59 and is configured to be spaced apart from the bottom surface 591 of the pocket 59 . The elastic cover plate 60 has a diameter smaller than the first diameter but larger than the second diameter. Thus, the circumferential edge of the resilient cover plate 60 rests on top of this rim or step 61 . The resilient cover sheet 60 provides means for taking up any residual expansion in a direction generally perpendicular to the gap 55 by bending or flexing of at least a central portion of the cover sheet 60 towards the bottom surface 591 of the pocket 59 . Preferably, the elastic cover plate 60 is a titanium plate.

每一袋部59包含來自該陣列小滴的小滴58，該小滴58配置在彈性覆蓋板60與夾持板52之第二側56之間。PCM之小滴58大體上中心地配置在彈性覆蓋板60之頂部上。 Each pocket 59 contains a droplet 58 from the array of droplets disposed between the resilient cover plate 60 and the second side 56 of the clamping plate 52 . The droplets 58 of PCM are disposed generally centrally on top of the elastic cover plate 60 .

如圖10中示意性地所示，覆蓋板60配置在對應袋部59內側、在包圍袋部的基底板54之表面63以下，此舉提供用於固定基底板54與夾持板52之間的間隙55中之小滴58之位置的構件。為增加彈性夾持板60與基底板54之間的熱輸運，熱傳導糊較佳地經配置在彈性夾持板60之圓周邊緣與輪緣或台階61之間。 As schematically shown in FIG. 10 , the cover plate 60 is disposed inside the corresponding pocket portion 59 below the surface 63 of the base plate 54 surrounding the pocket portion, which provides for securing between the base plate 54 and the clamping plate 52 The component of the position of the droplet 58 in the gap 55. To increase the heat transport between the elastic clamping plate 60 and the base plate 54 , the thermally conductive paste is preferably disposed between the circumferential edge of the elastic clamping plate 60 and the rim or step 61 .

另外，每一袋部59包含經配置以包圍該袋部59中之小滴58的環或環圈62。較佳地，環由合成材料或橡膠材料諸如Viton®製成。環或環圈62配置於該袋部59中，較佳地在該彈性覆蓋板60之頂部上，且充當用於該袋部59中之PCM之小滴58之限制部件。該環或環圈62之厚度小於夾持板52與彈性覆蓋板60之間的距離。因此，環或環圈62並未處於與覆蓋板60及夾持板52兩者直接接觸中。環或環圈62包含在大體上垂直夾持板52之第一側53的方向上的大體上矩形橫截面。該環或環圈62之大體上平坦上表面經配置成面對夾持板52之第二側56。當使用具有高密度之PCM諸如具有類鎵物質行為的類金屬材料時，環或環圈62藉由PCM向上推動，此舉將朝向夾持板52之第二側56推動環或環圈62。環或環圈62之平坦上表面經推抵夾持板52之第二側56且提供用於將PCM容納在環或環圈62內側的密封件。 Additionally, each pocket 59 includes a ring or loop 62 configured to enclose the droplets 58 in that pocket 59 . Preferably, the ring is made of synthetic or rubber material such as Viton® . A ring or loop 62 is disposed in the pocket 59 , preferably on top of the elastic cover plate 60 , and acts as a confinement member for the droplets 58 of PCM in the pocket 59 . The thickness of the ring or ring 62 is smaller than the distance between the clamping plate 52 and the elastic cover plate 60 . Thus, the ring or ring 62 is not in direct contact with both the cover plate 60 and the clamping plate 52 . The ring or loop 62 includes a generally rectangular cross-section in a direction generally perpendicular to the first side 53 of the clamp plate 52 . The generally flat upper surface of the ring or collar 62 is configured to face the second side 56 of the clamping plate 52 . When using a PCM with a high density such as a metal-like material with gallium-like behavior, the ring or ring 62 is pushed up by the PCM, which will push the ring or ring 62 towards the second side 56 of the clamping plate 52 . The flat upper surface of the ring or ring 62 is pushed against the second side 56 of the clamping plate 52 and provides a seal for containing the PCM inside the ring or ring 62 .

在圖10中所示之實例中，基底板54具備排氣孔542，該等排氣孔在該等袋部59之底部表面591中，較佳地在該等袋部59之中心流出。由於排氣孔591，底部表面591與彈性覆蓋板60之間的袋部59之下部分593內側的壓力大體上等於包圍基板夾持裝置51的壓力。 In the example shown in FIG. 10 , the base plate 54 is provided with vent holes 542 that flow out in the bottom surface 591 of the pockets 59 , preferably in the center of the pockets 59 . Due to the vent holes 591 , the pressure inside the lower portion 593 of the pocket 59 between the bottom surface 591 and the elastic cover plate 60 is substantially equal to the pressure surrounding the substrate clamping device 51 .

另外在此第七實例中，基底板54具備一陣列孔541，且夾持板52具備一陣列支撐件57。每一支撐件57配置在該等孔541中之對應一個中，且經由膠連接固定於該孔541中。 Also in this seventh example, the base plate 54 is provided with an array of holes 541 , and the clamping plate 52 is provided with an array of support members 57 . Each support member 57 is disposed in a corresponding one of the holes 541 , and is fixed in the hole 541 through glue connection.

應注意，以上呈現的實例全部描述根據本發明適合於夾持熱吸收材料，較佳地相變材料(PCM)，更佳地類金屬PCM之一陣列小滴的基板夾持裝置。此類材料之實例呈現於以下表中：

Figure 106125097-A0305-02-0040-1
It should be noted that the examples presented above all describe a substrate holding device suitable for holding an array of droplets of a heat absorbing material, preferably a phase change material (PCM), more preferably a metal-like PCM, according to the present invention. Examples of such materials are presented in the following table:
Figure 106125097-A0305-02-0040-1

圖11展示用於處理或將樣本130成像之儀器的簡圖。該儀器包含：模組201，其包含用於具有能量之電磁輻射或粒子之源；模組204， 其包含用於將該樣本130曝光於具有能量之該等電磁輻射或粒子；及根據本發明之基板夾持裝置209。 FIG. 11 shows a simplified diagram of the apparatus used to process or image the sample 130 . The apparatus comprises: a module 201 containing a source for electromagnetic radiation or particles with energy; a module 204, It comprises for exposing the sample 130 to the electromagnetic radiation or particles with energy; and a substrate holding device 209 according to the present invention.

特定而言，圖11示意性地表示多束帶電粒子微影術系統，其包含：- 照明光學模組201，其包括帶電粒子束源101及束準直系統102，- 孔徑陣列及冷凝器透鏡模組202，其包括孔徑陣列103及冷凝器透鏡陣列104，- 束轉換模組203，其包括束熄滅裝置陣列105，及- 投影光學模組204，其包括束終止器陣列108、束偏轉器陣列109，及投影透鏡陣列110。 In particular, Figure 11 schematically represents a multi-beam charged particle lithography system comprising: an illumination optics module 201 comprising a charged particle beam source 101 and a beam collimation system 102, an aperture array and a condenser lens Module 202, which includes aperture array 103 and condenser lens array 104, - Beam conversion module 203, which includes beam extinguishing device array 105, and - Projection optics module 204, which includes beam terminator array 108, beam deflectors Array 109, and projection lens array 110.

在圖11中所示之實例中，模組配置於對準內副架205及對準外副架206中。框架208經由振動阻尼機架207支撐對準副架205及206。 In the example shown in FIG. 11 , the modules are arranged in alignment with inner subframe 205 and in alignment with outer subframe 206 . Frame 208 supports alignment subframes 205 and 206 via vibration damping frame 207 .

模組201、202、203、204一起形成用於產生多個帶電粒子束、調變該等帶電粒子束，及朝向基板夾持裝置209之第一側209’導向該等帶電粒子束的帶電粒子光學單元。 The modules 201 , 202 , 203 , 204 together form charged particles for generating a plurality of charged particle beams, modulating the charged particle beams, and directing the charged particle beams towards the first side 209 ′ of the substrate holder 209 optical unit.

基板夾持裝置209配置於卡盤210之頂部上。在基板夾持裝置209之第一側209’上，可配置靶，例如晶圓130。 The substrate holding device 209 is disposed on top of the chuck 210 . On the first side 209' of the substrate holder 209, a target, such as a wafer 130, may be disposed.

基板夾持裝置209及卡盤210配置於短衝程級段211上，該短衝程級段經配置來用於沿全部六個自由度在小距離內驅動該卡盤210。短衝程級段211安裝於長衝程級段212之頂部上，該長衝程級段經配置來用於土至少大體上水平面中沿兩個正交方向(X及Y)驅動該短衝程級段211及卡盤210。 The substrate gripper 209 and chuck 210 are configured on a short stroke stage 211 configured for driving the chuck 210 over small distances along all six degrees of freedom. A short-stroke stage 211 is mounted on top of a long-stroke stage 212 configured for driving the short-stroke stage 211 in two orthogonal directions (X and Y) in an at least substantially horizontal plane and chuck 210.

微影術儀器200配置在真空腔室230內側，該真空腔室包括一或多個阿姆科鐵(μ金屬)屏蔽層215。屏蔽215以便利方式配置為真空腔室230之襯裡。機器擱置在藉由框架部件221支撐的基底板220上。 The lithography instrument 200 is disposed inside a vacuum chamber 230 that includes one or more Amco iron ( μ -metal) shielding layers 215 . Shield 215 is configured to line vacuum chamber 230 in a convenient manner. The machine rests on a base plate 220 supported by frame members 221 .

晶圓130及基板夾持裝置209相對於帶電粒子光學單元201、202、203、204之位置由量測裝置250量測，該量測裝置附接至對準副架205，該量測裝置250監測卡盤210相對於量測裝置250之位置。量測裝置250包含例如干涉計系統，且卡盤210隨後經提供鏡251以用於反射來自干涉計系統的光束252。 The position of the wafer 130 and the substrate holding device 209 relative to the charged particle optical units 201, 202, 203, 204 is measured by a measurement device 250 attached to the alignment sub-frame 205, the measurement device 250 The position of the chuck 210 relative to the measuring device 250 is monitored. The measurement device 250 comprises, for example, an interferometer system, and the chuck 210 is then provided with a mirror 251 for reflecting the light beam 252 from the interferometer system.

圖12展示例如用於在圖11之多束帶電粒子微影術系統之投影光學模組204中使用的改良式投影透鏡總成300之實施例的橫截面圖。投影透鏡總成300包含殼體，該殼體具有較佳地由金屬製成的電氣傳導性圓周壁330。投影透鏡總成300進一步包含覆蓋元件310，及該殼體之下游末端處的支撐元件340。用於帶電粒子束之通道自覆蓋元件310中之貫穿開口313、穿過投影透鏡總成之內部朝向第一電極301延伸，穿過支撐元件340，且最後在第二電極302中流出。大量帶電粒子束可在衝擊在配置於基板夾持裝置之頂部上的靶370之前穿過該貫穿開口，該基板夾持裝置較佳地但並非必須為如以上實例一至六中所描述之基板夾持裝置1。在所示實施例中，支撐元件340大體上平行於第一電極301及第二電極302兩者延伸。較佳地，支撐元件340徑向遠離第一電極301及第二電極302中之透鏡孔陣列延伸。 FIG. 12 shows a cross-sectional view of an embodiment of an improved projection lens assembly 300 , such as for use in projection optics module 204 of the multibeam charged particle lithography system of FIG. 11 . Projection lens assembly 300 includes a housing having an electrically conductive circumferential wall 330, preferably made of metal. The projection lens assembly 300 further includes a cover element 310, and a support element 340 at the downstream end of the housing. The channel for the charged particle beam extends from the through opening 313 in the cover element 310 , through the interior of the projection lens assembly towards the first electrode 301 , through the support element 340 , and finally out in the second electrode 302 . The bulk charged particle beam can pass through the through opening before impinging on the target 370 disposed on top of a substrate holding device, preferably but not necessarily a substrate holder as described in Examples one to six above Hold device 1. In the illustrated embodiment, the support element 340 extends substantially parallel to both the first electrode 301 and the second electrode 302 . Preferably, the support element 340 extends radially away from the array of lens holes in the first electrode 301 and the second electrode 302 .

為避免靶370與投影透鏡總成300之間的電場之形成，兩者可接地及/或彼此導體地連接。根據本發明之結構上強健的投影透鏡總成可 整體地置放於已知微影術系統中，或可出於維護目的換出或移除。 To avoid the formation of an electric field between target 370 and projection lens assembly 300, the two may be grounded and/or conductively connected to each other. The structurally robust projection lens assembly according to the present invention can Integrally placed in known lithography systems, or can be swapped out or removed for maintenance purposes.

大量帶電粒子束首先通過覆蓋元件310中之貫穿通道313。一旦帶電粒子束已穿過貫穿開口313，其到達束終止器陣列308。束終止器陣列308經配置來阻擋已藉由束轉換模組203之束熄滅裝置陣列105偏轉的帶電粒子束。藉由束熄滅裝置陣列105(參見例如圖11)偏轉的帶電粒子束藉由束終止器陣列308阻擋且未到達靶370。因此，帶電粒子束可藉由束熄滅裝置陣列個別地調變以允許單獨帶電粒子束衝擊在靶370上或並不衝擊在靶370上。未由否熄滅裝置陣列偏轉的束行進穿過束終止器陣列308且藉由靜電透鏡投影至靶370之表面上，該等靜電透鏡藉由第一電極301及第二電極302提供。使用此調變及靶370相對於包含投影透鏡總成300的曝光單元之相對移動允許圖案寫至靶370之表面上。 The bulk charged particle beam first passes through the through-channels 313 in the cover element 310 . Once the charged particle beam has passed through the through opening 313 , it reaches the beam terminator array 308 . The array of beam terminators 308 is configured to block the charged particle beam that has been deflected by the array of beam extinguishing devices 105 of the beam conversion module 203 . The charged particle beam deflected by beam extinction device array 105 (see eg FIG. 11 ) is blocked by beam terminator array 308 and does not reach target 370 . Thus, charged particle beams can be individually modulated by the array of beam extinguishing devices to allow individual charged particle beams to impinge on target 370 or not to impinge on target 370 . The beam that is not deflected by the non-extinguishing device array travels through the beam terminator array 308 and is projected onto the surface of the target 370 by electrostatic lenses provided by the first electrode 301 and the second electrode 302 . Using this modulation and relative movement of target 370 with respect to the exposure unit comprising projection lens assembly 300 allows a pattern to be written onto the surface of target 370 .

在一些投影透鏡系統中，偏轉器單元配置在束終止器陣列308與第一電極301及第二電極302之間，該偏轉器單元經配置來提供已經過樣本307之表面上的束終止器陣列308的束之掃描偏轉。較佳地，偏轉器單元包含X偏轉器及Y偏轉器以使束在垂直於投影透鏡系統300之光學軸線OA的正交方向上偏轉。 In some projection lens systems, a deflector unit is configured between the beam terminator array 308 and the first and second electrodes 301 and 302, the deflector unit being configured to provide the beam terminator array that has passed over the surface of the sample 307 308 beam scan deflection. Preferably, the deflector unit includes an X deflector and a Y deflector to deflect the beam in an orthogonal direction perpendicular to the optical axis OA of the projection lens system 300 .

如以上所指示，束終止器陣列308為用於至少部分地及/或暫時地阻擋大量帶電粒子束中之帶電粒子之至少部分的組件。為移除藉由帶電粒子束之阻擋產生的熱，束終止器陣列308組件具備導管309。在使用中，冷卻流體經由導管309導引，其中導管309配置成處於與束終止器陣列308熱接觸中。導管之至少一第一部分307配置在兩個帶電粒子束之間的區域中，如圖13中示意性地指示。導管之該第一部分307之中心軸線在大體 上垂直於投影透鏡系統300之中心軸線或光學軸線OA的方向上延伸。 As indicated above, beam terminator array 308 is a component for at least partially and/or temporarily blocking at least a portion of charged particles in a bulk charged particle beam. To remove the heat generated by the blocking of the charged particle beam, the beam terminator array 308 assembly is provided with conduits 309. In use, the cooling fluid is directed via conduit 309 configured to be in thermal contact with array 308 of beam terminators. At least a first portion 307 of the conduit is arranged in the region between the two charged particle beams, as schematically indicated in FIG. 13 . The central axis of the first portion 307 of the conduit is generally It extends in a direction perpendicular to the central axis or optical axis OA of the projection lens system 300 .

如圖12及圖13中所指示，導管之至少一第二部分306經配置以延伸使得導管之該第二部分306之中心軸線在大體上平行於投影透鏡系統300之中心軸線或光學軸線OA的方向上延伸。因此，導管之第一部分307可配置在投影透鏡系統300之第一末端303處或附近，該投影透鏡系統在使用中經配置成接近於靶370。導管之第二部分提供導管遠離投影透鏡系統300之該第一末端303的延伸，此允許提供用於與第一末端303適合地間隔分開的流體的輸入連接304及/或輸出連接305，且將投影透鏡系統300之第一末端303配置成極接近於靶370。 As indicated in FIGS. 12 and 13 , at least a second portion 306 of the conduit is configured to extend such that the central axis of the second portion 306 of the conduit is substantially parallel to the central axis or optical axis OA of the projection lens system 300 extending in the direction. Accordingly, the first portion 307 of the catheter may be disposed at or near the first end 303 of the projection lens system 300 which is disposed proximate the target 370 in use. A second portion of the conduit provides an extension of the conduit away from the first end 303 of the projection lens system 300, which allows for the provision of input connections 304 and/or output connections 305 for fluid suitably spaced from the first end 303, and to The first end 303 of the projection lens system 300 is disposed in close proximity to the target 370 .

應注意，如圖13中所示之冷卻單元亦可用於冷卻用於至少部分地或暫時地操縱帶電粒子束之主動組件，諸如但不限於靜電偏轉器或透鏡，以移動藉由配置在此類主動組件上或中的電子組件產生的熱。主動組件例如第一電極301及第二302可配置在導管307之間。 It should be noted that the cooling unit as shown in Figure 13 can also be used to cool active components for at least partially or temporarily steering the charged particle beam, such as but not limited to electrostatic deflectors or lenses, to move by disposing in such Heat generated by electronic components on or in active components. Active components such as the first electrode 301 and the second electrode 302 may be disposed between the conduits 307 .

圖14展示展示包含用於使樣本470曝光之曝光單元及用於至少在該曝光期間夾持該樣本470之基板夾持裝置480的總成之一部分之實施例的橫截面圖。圖14中所示之總成例如適合於在圖11之多束帶電粒子微影術系統之投影光學模組204中使用。 14 shows a cross-sectional view showing an embodiment of a portion of an assembly including an exposure unit for exposing a sample 470 and a substrate holding device 480 for holding the sample 470 at least during the exposure. The assembly shown in FIG. 14 is suitable, for example, for use in the projection optics module 204 of the multibeam charged particle lithography system of FIG. 11 .

曝光單元包含投影透鏡總成400，該投影透鏡總成包含具有較佳地由金屬製成的電氣傳導性圓周壁430的殼體。正如圖12中所示之投影透鏡總成300，投影透鏡總成400包含覆蓋元件410、覆蓋元件410中之貫穿開口413、束終止器陣列408、支撐元件440、第一電極401、第二電極402。 The exposure unit includes a projection lens assembly 400 that includes a housing having an electrically conductive circumferential wall 430, preferably made of metal. Like projection lens assembly 300 shown in FIG. 12, projection lens assembly 400 includes cover element 410, through openings 413 in cover element 410, beam terminator array 408, support element 440, first electrode 401, second electrode 402.

另外，投影透鏡總成400包含用於至少部分地及/或暫時地操縱及/或阻擋帶電粒子束之至少部分的組件。一此組件為束終止器陣列408，該束終止器陣列經配置來阻擋已由圖11中所示之束轉換模組203之束熄滅裝置陣列105偏轉的帶電粒子束。束終止器陣列408包含冷卻配置，該冷卻配置經配置來用於將束終止器陣列408大體上維持在預定第一溫度處。在圖14中所示之實例中，冷卻配置亦冷卻投影透鏡總成之其他部分，且在使用中，大體上整個投影透鏡總成處於該第一溫度處。投影透鏡總成包含第一溫度感測器T1，該第一溫度感測器配置在例如支撐元件440處，該第一溫度感測器T1經配置來用於量測投影透鏡總成，尤其該投影透鏡總成之面對基板夾持裝置480的部分之溫度。 Additionally, projection lens assembly 400 includes components for at least partially and/or temporarily steering and/or blocking at least a portion of the charged particle beam. One such component is beam terminator array 408 that is configured to block the charged particle beam that has been deflected by beam extinguishing device array 105 of beam conversion module 203 shown in FIG. 11 . Beam terminator array 408 includes a cooling arrangement configured to maintain beam terminator array 408 substantially at a predetermined first temperature. In the example shown in Figure 14, the cooling arrangement also cools other parts of the projection lens assembly and, in use, substantially the entire projection lens assembly is at the first temperature. The projection lens assembly includes a first temperature sensor T1, which is configured, for example, at the support element 440, the first temperature sensor T1 is configured for measuring the projection lens assembly, in particular the The temperature of the portion of the projection lens assembly facing the substrate holder 480 .

冷卻配置包含用於冷卻流體，尤其冷卻液體，諸如高純水的導管或管道之大體上閉合迴路。冷卻配置進一步包含用於將冷卻流體冷卻至低於第一溫度之溫度的冷卻裝置450。冷卻裝置450包含在使用耦接至製造廠冷卻劑迴路的熱交換迴路451。 The cooling arrangement comprises a substantially closed circuit of conduits or pipes for cooling a fluid, particularly a cooling liquid, such as high purity water. The cooling arrangement further includes a cooling device 450 for cooling the cooling fluid to a temperature below the first temperature. Cooling device 450 is included in the use of a heat exchange circuit 451 coupled to the manufacturing plant coolant circuit.

在冷卻裝置450之下游，加熱裝置470配置於閉合迴路中。加熱裝置470經配置來用於加熱冷卻液體。冷卻裝置450及加熱裝置470之組合提供用於精確地控制冷卻流體之溫度的構件。加熱裝置配置於相對於投影透鏡總成400的上游位置處之導管中。 Downstream of the cooling device 450, the heating device 470 is arranged in a closed circuit. The heating device 470 is configured for heating the cooling liquid. The combination of cooling device 450 and heating device 470 provides means for precisely controlling the temperature of the cooling fluid. The heating device is disposed in the conduit at an upstream position relative to the projection lens assembly 400 .

如以上所指示，束終止器陣列408為用於至少部分地及/或暫時地阻擋大量帶電粒子束中之帶電粒子之至少部分的組件。為移除藉由帶電粒子束之阻擋產生的熱，束終止器陣列408組件具備為冷卻配置之部分的導管409。在使用中，來自冷卻裝置450及來自加熱裝置470的冷卻流 體經配置以經由導管406朝向導管409流動，其中導管409配置成處於與束終止器陣列408熱接觸中。隨後，冷卻流體經由導管406’、405向回流動至冷卻裝置450。如圖14中所指示，導管409在投影透鏡系統400之第一末端403處或附近配置在投影透鏡系統400內側，該投影透鏡系統在使用中經配置成接近於基板470。 As indicated above, beam terminator array 408 is a component for at least partially and/or temporarily blocking at least a portion of charged particles in a bulk charged particle beam. To remove the heat generated by the blocking of the charged particle beam, the beam terminator array 408 assembly is provided with conduits 409 that are part of the cooling configuration. In use, cooling flow from cooling device 450 and from heating device 470 The body is configured to flow via conduit 406 towards conduit 409 , wherein conduit 409 is configured to be in thermal contact with array 408 of beam terminators. The cooling fluid then flows back to the cooling device 450 via conduits 406', 405. As indicated in FIG. 14 , the conduit 409 is disposed inside the projection lens system 400 at or near the first end 403 of the projection lens system 400 which, in use, is disposed proximate the substrate 470 .

此外，閉合迴路包含用於量測導管404、406、409、406’、405中之冷卻流體之溫度的一或多個溫度感測器。在圖14中所示之特定實例中：第二溫度感測器T2配置於冷卻裝置450與加熱裝置470之間的導管中；第三溫度感測器T3配置於加熱裝置470與束終止器陣列408之間的導管中；且第四溫度感測器T4配置於束終止器陣列408之下游的導管中。 Additionally, the closed loop includes one or more temperature sensors for measuring the temperature of the cooling fluid in the conduits 404, 406, 409, 406', 405. In the specific example shown in Figure 14: the second temperature sensor T2 is arranged in the conduit between the cooling device 450 and the heating device 470; the third temperature sensor T3 is arranged in the heating device 470 and the array of beam terminators 408; and a fourth temperature sensor T4 is disposed in the duct downstream of the beam terminator array 408.

溫度感測器T1、T2、T3及T4提供用於溫度控制系統490之輸入，該溫度控制系統經配置以控制穿過冷卻裝置450中之熱交換迴路451的製造廠冷卻液體之流量且/或控制藉由加熱裝置470的冷卻流體之加熱。溫度控制系統490經配置以控制加熱裝置470及/或冷卻裝置450，以在基板夾持裝置480與投影透鏡系統400，尤其投影透鏡系統400之面對基板夾持裝置480的第一末端403之間建立溫度差，該溫度差較佳地在1℃至1,5℃之範圍內。 Temperature sensors T1, T2, T3, and T4 provide input for temperature control system 490 configured to control the flow of factory cooling liquid through heat exchange loop 451 in cooling device 450 and/or The heating of the cooling fluid by the heating device 470 is controlled. The temperature control system 490 is configured to control the heating device 470 and/or the cooling device 450 for the temperature between the substrate holding device 480 and the projection lens system 400, especially the first end 403 of the projection lens system 400 facing the substrate holding device 480 A temperature difference is established between, preferably in the range of 1°C to 1,5°C.

樣本470經配置在用於至少在曝光期間夾持該樣本470的基板夾持裝置480之頂部上。基板夾持裝置480包含夾持板481，其中夾持板包含用於夾持基板470之第一側，及基底板482。在夾持板481與基底板482 之間，配置包含相變材料483的溫度穩定配置，該相變材料具有在第二溫度處的相變。基板夾持裝置480較佳地但並非必要地為如以上實例一至六中所描述之基板夾持裝置。 The sample 470 is configured on top of a substrate holder 480 for holding the sample 470 at least during exposure. The substrate clamping device 480 includes a clamping plate 481 , wherein the clamping plate includes a first side for clamping the substrate 470 , and a base plate 482 . between the clamping plate 481 and the base plate 482 In between, the configuration includes a temperature stable configuration of phase change material 483 having a phase change at the second temperature. The substrate clamping device 480 is preferably, but not necessarily, a substrate clamping device as described in Examples 1-6 above.

在圖14中所示之實例中，基板夾持裝置480及投影透鏡系統400兩者各自具備用於控制其溫度的配置。特定而言，因為投影透鏡系統400經配置以使用具有能量的帶電粒子束使樣本470曝光，所以投影透鏡系統400，尤其束終止器陣列408及/或樣本470將吸收能量之至少部分。通過為投影透鏡系統400及基板夾持裝置480兩者提供其自有的冷卻配置及溫度穩定配置，可獲得基板470之精確溫度控制，該溫度控制允許：較佳地使用容易得到的製造廠冷卻劑至少大體上將投影透鏡系統400，尤其該投影透鏡系統之束終止器陣列408之溫度維持在第一溫度處，且使用具有在第二溫度處的相變的相變材料將基板470之溫度維持在第二溫度處。 In the example shown in Figure 14, both the substrate holding device 480 and the projection lens system 400 are each provided with a configuration for controlling their temperature. In particular, because projection lens system 400 is configured to expose sample 470 using a charged particle beam having energy, projection lens system 400, especially beam terminator array 408 and/or sample 470, will absorb at least a portion of the energy. By providing both projection lens system 400 and substrate holding device 480 with their own cooling and temperature stabilizing configurations, precise temperature control of substrate 470 can be achieved that allows: preferably the use of readily available fab cooling The agent maintains at least substantially the temperature of the projection lens system 400, and in particular the beam terminator array 408 of the projection lens system, at a first temperature, and the temperature of the substrate 470 is reduced using a phase change material having a phase change at the second temperature. maintained at the second temperature.

應注意，示意圖12及圖14尤其對於使用低千電子伏特帶電粒子的帶電粒子束曝光系統未按比例繪製，該低千電子伏特帶電粒子例如具有大體上低於10keV，較佳地約5keV之能量的帶電粒子。在使用低千電子伏特帶電粒子的此類帶電粒子束曝光系統中，投影透鏡系統400之第一末端403與基板470之頂部表面之間的距離s極小。距離s較佳地小於樣本470之厚度d2。在樣本470為矽晶圓之狀況下，厚度d2通常為330微米。較佳地，距離s小於第二電極402之厚度d1，該第二電極界定投影透鏡系統400之第一末端403。特定而言，距離s小於100微米，較佳地50微米。 It should be noted that schematic diagrams 12 and 14 are not drawn to scale, especially for charged particle beam exposure systems using low keV charged particles, such as having energies substantially below 10 keV, preferably about 5 keV charged particles. In such charged particle beam exposure systems using low keV charged particles, the distance s between the first end 403 of the projection lens system 400 and the top surface of the substrate 470 is extremely small. The distance s is preferably less than the thickness d2 of the sample 470 . In the case where the sample 470 is a silicon wafer, the thickness d2 is typically 330 μm. Preferably, the distance s is less than the thickness d1 of the second electrode 402 defining the first end 403 of the projection lens system 400 . In particular, the distance s is less than 100 microns, preferably 50 microns.

如圖12及圖14之實例中所示，基板夾持裝置480及曝光單元，尤其該曝光單元之投影透鏡系統400兩者具備用於控制其溫度的配置。另外，如圖14中示意性地所示，曝光單元之冷卻配置之溫度係基於基板夾持裝置480之溫度穩定配置之溫度加以控制。因此，冷卻配置包含控制裝置490，該控制裝置經組配來將第一溫度，尤其如由第一溫度感測器T1量測的溫度，調節至在相變材料483展現相變的第二溫度附近或等於該第二溫度。 As shown in the example of Figures 12 and 14, both the substrate holding device 480 and the exposure unit, in particular the projection lens system 400 of the exposure unit, are provided with arrangements for controlling their temperature. In addition, as schematically shown in FIG. 14 , the temperature of the cooling configuration of the exposure unit is controlled based on the temperature of the temperature stabilization configuration of the substrate holding device 480 . Thus, the cooling arrangement includes control means 490 configured to adjust the first temperature, in particular as measured by the first temperature sensor T1, to a second temperature at which the phase change material 483 exhibits a phase change near or equal to the second temperature.

較佳地，冷卻配置及溫度穩定配置經配置使得第二溫度至少在藉由該等帶電粒子束的該基板之曝光期間在第一溫度處或附近。 Preferably, the cooling configuration and the temperature stabilization configuration are configured such that the second temperature is at or near the first temperature at least during exposure of the substrate by the charged particle beams.

圖15展示用於藉助於根據如上文所描述之儀器製造半導體裝置之方法之實例的示意性流程圖150。方法包含以下步驟：151：將晶圓置放在基板夾持裝置上且將該晶圓定位在該曝光單元之下游；152：處理該晶圓，包括藉助於來自該源的具有能量之電磁輻射或粒子將影像或圖案投影於該晶圓上；以及153：執行後續步驟以便藉助於該處理後晶圓產生半導體裝置。 15 shows a schematic flow diagram 150 of an example of a method for fabricating a semiconductor device by means of an apparatus as described above. The method comprises the steps of: 151: placing a wafer on a substrate holder and positioning the wafer downstream of the exposure unit; 152: processing the wafer, including by means of energetic electromagnetic radiation from the source or particles to project an image or pattern on the wafer; and 153: Perform subsequent steps to produce semiconductor devices by means of the processed wafer.

圖16展示用於藉助於如上文所描述之儀器檢查靶之方法之實例的示意性流程圖160，該方法包含以下步驟：161：將該靶置放在基板夾持裝置上且將該晶圓定位在該曝光單元之下游；162：將來自該源的具有能量之該等電磁輻射或粒子投影於靶上；163：在來自該源的具有能量之該等電磁輻射或粒子入射於該靶上時 偵測藉由該靶傳輸、發射且/或反射的電磁輻射或帶電粒子；以及164：執行後續步驟以便藉助於來自偵測帶電粒子之步驟的資料檢查該靶。 16 shows a schematic flow diagram 160 of an example of a method for inspecting a target by means of an instrument as described above, the method comprising the steps of: 161 : placing the target on a substrate holder and the wafer positioned downstream of the exposure unit; 162: projecting the electromagnetic radiation or particles with energy from the source on the target; 163: upon the electromagnetic radiation or particles with energy from the source incident on the target Time Detecting electromagnetic radiation or charged particles transmitted, emitted and/or reflected by the target; and 164: Performing subsequent steps to inspect the target with data from the step of detecting charged particles.

應理解，以上描述經包括來例示較佳實施例之操作且不意味限制本發明之範疇。自以上論述，熟習此項技術者將顯而易見本發明之精神及範疇將仍涵蓋的許多變化。 It should be understood that the above description has been included to illustrate the operation of the preferred embodiment and is not meant to limit the scope of the invention. From the above discussion, many variations that would still be encompassed by the spirit and scope of the invention will be apparent to those skilled in the art.

例如，儘管以上所描述之實例中的袋部之形狀及直徑對於所有所示袋部為大體上相同的，但基底板亦可具備具有不同大小及/或具有不同形狀之袋部。特定而言，沿基板夾持裝置之邊緣的袋部可小於該等袋部以沿基板夾持裝置之邊緣獲得熱吸收材料之較好覆蓋。 For example, although the shape and diameter of the pockets in the examples described above are substantially the same for all of the pockets shown, the base plate may also have pockets of different sizes and/or of different shapes. In particular, the pockets along the edge of the substrate gripping device can be smaller than the pockets to obtain better coverage of the heat absorbing material along the edge of the substrate gripping device.

此外，可使用大量熱吸收材料。如已指示，熱吸收材料較佳地經選擇以便具有在使用基板夾持裝置的基板處理儀器之操作溫度處或附近的熔化溫度或熔化範圍。此類熱吸收材料亦以相變材料或簡稱PCM的名義為已知的。 Additionally, a number of heat absorbing materials can be used. As indicated, the heat absorbing material is preferably selected so as to have a melting temperature or melting range at or near the operating temperature of the substrate processing apparatus using the substrate clamping device. Such heat absorbing materials are also known under the name Phase Change Materials or PCM for short.

總之，本發明係關於基板夾持裝置，該基板夾持裝置包含夾持板、基底板、一陣列支撐件，及熱吸收材料之一陣列小滴。夾持板包含用於夾持基板之第一側。基底板配置在距夾持板之一距離處且在夾持板之與第一側相反的側處提供基底板與夾持板之間的間隙。該陣列支撐件配置在夾持板與基底板之間。該陣列液體及/或固體小滴配置在夾持板與基底板之間，且小滴經配置以接觸基底板及夾持板兩者。小滴配置成彼此且與支撐件間隔分開，且經配置成在沿間隙的方向上彼此鄰近。 In summary, the present invention relates to a substrate holding device comprising a holding plate, a base plate, an array of supports, and an array of droplets of heat absorbing material. The clamping plate includes a first side for clamping the substrate. The base plate is disposed at a distance from the clamp plate and provides a gap between the base plate and the clamp plate at a side of the clamp plate opposite the first side. The array support is disposed between the clamping plate and the base plate. The array of liquid and/or solid droplets are disposed between the clamp plate and the base plate, and the droplets are disposed to contact both the base plate and the clamp plate. The droplets are arranged spaced apart from each other and from the support, and are arranged adjacent to each other in a direction along the gap.

另外或替代地，本發明係關於用於使樣本曝光之儀器及方 法。該儀器包含用於具有能量之電磁輻射或粒子之源、用於使該樣本曝光於該等電磁輻射或粒子之曝光單元，及用於至少在該曝光期間夾持該樣本之基板夾持裝置。該曝光單元包含用於操縱及/或阻擋電磁輻射或帶電粒子之至少部分之組件。該線件包含冷卻配置，該冷卻配置經配置來用於將組件大體上維持在預定第一溫度處。該基板夾持裝置包含溫度穩定配置，該溫度穩定配置經配置以大體上穩定配置於該基板夾持裝置上的樣本之溫度。該溫度穩定配置包含具有在第二溫度處的相變的相變材料，該第二溫度在第一溫度處或附近。 Additionally or alternatively, the present invention relates to apparatus and methods for exposing a sample Law. The apparatus comprises a source for energetic electromagnetic radiation or particles, an exposure unit for exposing the sample to the electromagnetic radiation or particles, and a substrate holding device for holding the sample at least during the exposure. The exposure unit includes components for manipulating and/or blocking at least part of the electromagnetic radiation or charged particles. The wire includes a cooling arrangement configured for maintaining the assembly substantially at a predetermined first temperature. The substrate holding device includes a temperature stable configuration configured to substantially stabilize the temperature of a sample disposed on the substrate holding device. The temperature stable configuration includes a phase change material having a phase change at a second temperature, the second temperature being at or near the first temperature.

1:基板夾持裝置 1: Substrate clamping device

2:夾持板 2: Clamping plate

3:第一側 3: First side

4:基底板 4: base plate

5:間隙 5: Gap

6:第二側 6: Second side

7:支撐件 7: Supports

8:小滴 8: Droplets

9:袋部 9: bag part

41:孔 41: Hole

91:圓錐形邊緣 91: Conical edge

w:寬度 w: width

Claims (20)

一種基板夾持(holding)裝置，其包含：一夾持板，其中該夾持板包含用於夾持一基板之一第一側，一基底(base)板，其配置在距該夾持板一距離處且在該夾持板之背離該第一側的一第二側處提供該基底板與該夾持板之間的一間隙，一陣列支撐件，該支撐件至少配置在該夾持板與該基底板之間，及一熱吸收材料之一陣列小滴，該小滴配置在該夾持板與該基底板之間的該間隙中，其中該小滴經配置成與該支撐件間隔分開且與該陣列小滴中之其他小滴間隔分開，且其中該小滴經配置以接觸該基底板及該夾持板兩者。 A substrate holding device, comprising: a holding plate, wherein the holding plate includes a first side for holding a substrate, and a base plate disposed at a distance from the holding plate A gap is provided between the base plate and the clamping plate at a distance and at a second side of the clamping plate facing away from the first side, an array of supports disposed at least on the clamping plate between the plate and the base plate, and an array of droplets of heat absorbing material disposed in the gap between the clamp plate and the base plate, wherein the droplets are disposed to contact the support spaced apart and spaced apart from other droplets in the array of droplets, and wherein the droplet is configured to contact both the base plate and the clamping plate. 根據申請專利範圍第1項之基板夾持裝置，其中該小滴經配置以致能該小滴在沿該間隙之方向上的一實質自由膨脹。 The substrate holding device according to claim 1, wherein the droplet is configured to enable a substantially free expansion of the droplet in a direction along the gap. 根據申請專利範圍第1或2項之基板夾持裝置，其中該陣列支撐件固定地附接至該夾持板之該第二側。 The substrate clamping device according to claim 1 or 2, wherein the array support is fixedly attached to the second side of the clamping plate. 根據申請專利範圍第1或2項之基板夾持裝置，其中該陣列支撐件固定地附接至該基底板。 The substrate clamping device according to claim 1 or 2, wherein the array support is fixedly attached to the base plate. 根據申請專利範圍第1或2項之基板夾持裝置，其中該基板夾持裝置進一步包含一陣列環，該環配置於該夾持板與該基底板之間的該間隙中，且其中該陣列環中每一環經配置以包圍該陣列小滴中之一個小滴。 The substrate clamping device according to claim 1 or 2, wherein the substrate clamping device further comprises an array ring disposed in the gap between the clamping plate and the base plate, and wherein the array Each of the rings is configured to enclose one droplet in the array of droplets. 根據申請專利範圍第5項之基板夾持裝置，其中該環之一厚度小於該夾持板與該基底板之間的該間隙之寬度。 The substrate clamping device according to claim 5, wherein a thickness of the ring is smaller than a width of the gap between the clamping plate and the base plate. 根據申請專利範圍第5項之基板夾持裝置，其中該環由一可撓性或 彈性材料製成。 The substrate holding device according to claim 5, wherein the ring is made of a flexible or Made of elastic material. 根據申請專利範圍第1或2項之基板夾持裝置，其中該基底板之面對該間隙的一表面及/或該夾持板之面對該間隙的一表面具備一陣列袋部，其中在該陣列袋部中之一袋部處的該夾持板與該基底板之間的該間隙之該寬度大於該袋部周圍的該夾持板與該基底板之間的該間隙之該寬度，且其中該陣列袋部中每一袋部經配置來用於夾持該陣列小滴中之一個小滴。 The substrate clamping device according to claim 1 or 2, wherein a surface of the base plate facing the gap and/or a surface of the clamping plate facing the gap is provided with an array of pockets, wherein the The width of the gap between the clamping plate and the base plate at one of the pockets of the array is greater than the width of the gap between the clamping plate and the base plate around the pocket, and wherein each pocket of the array of pockets is configured to hold one droplet of the array of droplets. 根據申請專利範圍第1或2項之基板夾持裝置，其中該基底板之面對該間隙的一衰面包含一陣列袋部，其中該陣列袋部中每一袋部包含一彈性部件，該彈性部件跨過該袋部且經配置成與該袋部之一底部表面間隔分開，且其中每一袋部包含來自該陣列小滴之一小滴，其中該小滴配置在該彈性部件板與該夾持板之間。 The substrate clamping device according to claim 1 or 2, wherein a dead surface of the base plate facing the gap includes an array of pockets, wherein each pocket in the array of pockets includes an elastic member, the A resilient member spans the pocket portion and is configured to be spaced apart from a bottom surface of the pocket portion, and wherein each pocket portion contains a droplet from the array of droplets, wherein the droplet is disposed between the resilient member plate and a bottom surface of the pocket portion. between the clamping plates. 根據申請專利範圍第9項之基板夾持裝置，其中該彈性部件與該夾持板之間的距離大於該夾持板與該基底板之鄰近於該袋部的該表面之間的該距離。 The substrate clamping device according to claim 9, wherein the distance between the elastic member and the clamping plate is greater than the distance between the clamping plate and the surface of the base plate adjacent to the pocket portion. 根據申請專利範圍第9項之基板夾持裝置，其中該彈性部件包含一覆蓋，較佳地一覆蓋板。 The substrate clamping device according to claim 9, wherein the elastic member comprises a cover, preferably a cover plate. 根據申請專利範圍第9項之基板夾持裝置，其中每一袋部包含用於將該彈性部件之一邊緣之至少部分，較佳地該彈性覆蓋之一圓周邊緣支撐於該袋部中的一支撐元件。 The substrate clamping device according to claim 9, wherein each pocket portion includes a portion for supporting at least a portion of an edge of the elastic member, preferably a circumferential edge of the elastic cover in the pocket portion support element. 根據申請專利範圍第11項之基板夾持裝置，其中每一袋部包含一環或一環圈，該環或該環圈配置於該夾持板與該彈性部件之間的該間隙中，且其中該環或該環圈經配置以將一小滴包圍在該口袋中。 The substrate holding device according to claim 11, wherein each pocket portion includes a ring or a ring, the ring or the ring is disposed in the gap between the holding plate and the elastic member, and wherein the The ring or the loop is configured to enclose a droplet in the pocket. 根據申請專利範圍第13項之基板夾持裝置，其中該環或環圈之一厚度小於該夾持板與該彈性部件之間的該距離。 The substrate clamping device according to claim 13, wherein the ring or a thickness of the ring is smaller than the distance between the clamping plate and the elastic member. 根據申請專利範圍第13項之基板夾持裝置，其中該環或環圈包含一大體上短形橫截面。 The substrate holding device according to claim 13, wherein the ring or ring comprises a generally short cross-section. 根據申請專利範圍第8項之基板夾持裝置，其中該基底板具備排氣孔，該排氣孔在該袋部之一底部表面中流出，且該排氣孔較佳地大體上在該袋部之中心流出。 The substrate holding device according to claim 8, wherein the base plate is provided with a vent hole that flows out in a bottom surface of the pocket portion, and the vent hole is preferably substantially in the pocket The center of the department flows out. 根據申請專利範圍第1或2項之基板夾持裝置，對於在一基板處理儀器或基板成像儀器中之使用，其中該陣列小滴中之該小滴包含具有在該基板處理儀器或基板成像儀器之一操作溫度處或附近之一熔化溫度或一熔他範圍的一材料。 The substrate holding device according to claim 1 or 2, for use in a substrate processing apparatus or substrate imaging apparatus, wherein the droplets in the array of droplets comprise a A material at or near an operating temperature, a melting temperature or a range of other melting points. 根據申請專利範團第1或2項之基板夾持裝置，其中該間隙包含至該基板夾持裝置之外側的一敞開連接，較佳地該問除在該基板夾持裝置之一周圍側邊緣處大體上敞開。 The substrate holding device according to claim 1 or 2, wherein the gap comprises an open connection to the outside of the substrate holding device, preferably the interposition is at a peripheral side edge of the substrate holding device is generally open. 一種用於處理或將一樣本成像之儀器，其中該儀器包含一源，其用於具有能量之電磁輻射或粒子，一曝光單元，其用於使該樣本曝光於該其有能量之電磁輻射或粒子，及用於至少在該曝光期間夾持該樣本的根據申請專利範圍第1-18項中任一項之一基板夾持裝置。 An apparatus for processing or imaging a sample, wherein the apparatus comprises a source for energetic electromagnetic radiation or particles, an exposure unit for exposing the sample to the energetic electromagnetic radiation or Particles, and a substrate holding device according to any one of claims 1-18 of the patented scope for holding the sample at least during the exposure. 一種用於製造一基板夾持裝置之方法，該基板夾持裝置包含：一夾持板，其中該夾持板包含用於夾持一基板之一第一側；一基底板，其配置 在距該夾持板之一距離處且在該夾持板之背離該第一側的一第二側處提供該基底板與該夾持板之間的一間隙；一陣列支撐件，其至少配置在該夾持板與該基底板之間；以及一熱吸收材料之一陣列小滴，其中該方法包含以下步驟：將與該支撐件且與該陣列小滴中其他小滴間隔分開的該小滴配置在該夾持板與該基底板之間，其中該小滴至少在其液相中經配置以接觸該夾持板及該基底板兩者。 A method for manufacturing a substrate clamping device, the substrate clamping device comprising: a clamping plate, wherein the clamping plate includes a first side for clamping a substrate; a base plate, which is configured providing a gap between the base plate and the clamping plate at a distance from the clamping plate and at a second side of the clamping plate facing away from the first side; an array of supports at least disposed between the clamping plate and the base plate; and an array of droplets of heat absorbing material, wherein the method includes the steps of: spacing the droplet from the support and from other droplets in the array of droplets A droplet is disposed between the clamp plate and the base plate, wherein the droplet is disposed at least in its liquid phase to contact both the clamp plate and the base plate.
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