GB1299113A - Improvements in and relating to monolithic data storage matrices - Google Patents
Improvements in and relating to monolithic data storage matricesInfo
- Publication number
- GB1299113A GB1299113A GB00254/70A GB1025470A GB1299113A GB 1299113 A GB1299113 A GB 1299113A GB 00254/70 A GB00254/70 A GB 00254/70A GB 1025470 A GB1025470 A GB 1025470A GB 1299113 A GB1299113 A GB 1299113A
- Authority
- GB
- United Kingdom
- Prior art keywords
- collector
- region
- resistors
- march
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000013500 data storage Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
- H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
- H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
- H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1912176A DE1912176C2 (de) | 1969-03-11 | 1969-03-11 | Monolithische Speicherzelle |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1299113A true GB1299113A (en) | 1972-12-06 |
Family
ID=5727705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB00254/70A Expired GB1299113A (en) | 1969-03-11 | 1970-03-04 | Improvements in and relating to monolithic data storage matrices |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5120858B1 (ja) |
DE (1) | DE1912176C2 (ja) |
FR (1) | FR2059996B1 (ja) |
GB (1) | GB1299113A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2131604A (en) * | 1982-12-03 | 1984-06-20 | Itt Ind Ltd | Semiconductor memories |
GB2195496A (en) * | 1984-08-31 | 1988-04-07 | Hitachi Ltd | A semiconductor integrated circuit device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3421026A (en) * | 1964-06-29 | 1969-01-07 | Gen Electric | Memory flip-flop |
US3354440A (en) * | 1965-04-19 | 1967-11-21 | Ibm | Nondestructive memory array |
US3493788A (en) * | 1967-01-16 | 1970-02-03 | Ibm | Memory cell having a resistance network to prevent saturation |
BE712913A (ja) * | 1967-05-25 | 1968-07-31 |
-
1969
- 1969-03-11 DE DE1912176A patent/DE1912176C2/de not_active Expired
-
1970
- 1970-02-19 FR FR7006058A patent/FR2059996B1/fr not_active Expired
- 1970-03-04 GB GB00254/70A patent/GB1299113A/en not_active Expired
- 1970-03-10 JP JP45019860A patent/JPS5120858B1/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2131604A (en) * | 1982-12-03 | 1984-06-20 | Itt Ind Ltd | Semiconductor memories |
US4663739A (en) * | 1982-12-03 | 1987-05-05 | Stc Plc | Semiconductor memories |
GB2195496A (en) * | 1984-08-31 | 1988-04-07 | Hitachi Ltd | A semiconductor integrated circuit device |
GB2195496B (en) * | 1984-08-31 | 1989-05-17 | Hitachi Ltd | A semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPS5120858B1 (ja) | 1976-06-28 |
DE1912176C2 (de) | 1983-10-27 |
FR2059996B1 (ja) | 1976-02-06 |
DE1912176A1 (de) | 1970-09-17 |
FR2059996A1 (ja) | 1971-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |