GB1271154A - Improvements in and relating to integrated capacitor memories - Google Patents
Improvements in and relating to integrated capacitor memoriesInfo
- Publication number
- GB1271154A GB1271154A GB2074369A GB2074369A GB1271154A GB 1271154 A GB1271154 A GB 1271154A GB 2074369 A GB2074369 A GB 2074369A GB 2074369 A GB2074369 A GB 2074369A GB 1271154 A GB1271154 A GB 1271154A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistors
- april
- capacitors
- common
- delay time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 4
- 230000015654 memory Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
1,271,154. Active delay lines. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES LTD. 23 April, 1969 [23 April, 1968], No. 20743/69. Heading H3U. [Also in Division H1] An integrated capacitor memory used inter alia for delaying transit times of A.F. and V.F. signals comprises a chain of capacitors between which charge can be transferred via a corresponding chain of transistors in response to control signals applied through their bases, the capacitors being constituted by the collector-base capacitances of the transistors, which are formed in islands on a common substrate. Independent signals can be applied to each transistor (Fig. 1, not shown) to give the maximum delay time per transistor but the number of switching sources can be reduced with only a slight loss of delay time by arranging the transistors in a series of groups (Fig. 6) and applying a common signal to the corresponding transistors in each group, which preferably have a common base region with an N+ underlayer, as in the Fig. 10 structure (not shown), which lacks the final diode D of the Fig. 6 circuit. The circuit operates as described in Specification 1,175,600. In Fig. 10 (not shown) the transistors are of lateral type with the emitter and collector zones formed by diffusion into an epitaxial N-type base layer, which may be contacted at one or several points, on a P-type silicon substrate.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6805704A NL162500C (en) | 1968-04-23 | 1968-04-23 | INTEGRATED CAPACITOR MEMORY. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1271154A true GB1271154A (en) | 1972-04-19 |
Family
ID=19803412
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB369171A Expired GB1271155A (en) | 1968-04-23 | 1969-04-23 | Improvements in transistors |
| GB2074369A Expired GB1271154A (en) | 1968-04-23 | 1969-04-23 | Improvements in and relating to integrated capacitor memories |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB369171A Expired GB1271155A (en) | 1968-04-23 | 1969-04-23 | Improvements in transistors |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS509515B1 (en) |
| AT (1) | AT301908B (en) |
| BE (1) | BE731974A (en) |
| CH (1) | CH511496A (en) |
| DE (2) | DE1966847A1 (en) |
| DK (1) | DK131253B (en) |
| ES (2) | ES366285A1 (en) |
| FR (1) | FR2011816A1 (en) |
| GB (2) | GB1271155A (en) |
| NL (1) | NL162500C (en) |
| SE (1) | SE386299B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8574629B2 (en) * | 2008-08-01 | 2013-11-05 | Anteis S.A. | Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3356860A (en) * | 1964-05-08 | 1967-12-05 | Gen Micro Electronics Inc | Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation |
-
1968
- 1968-04-23 NL NL6805704A patent/NL162500C/en active
-
1969
- 1969-04-17 DE DE19691966847 patent/DE1966847A1/en not_active Withdrawn
- 1969-04-17 DE DE19691919507 patent/DE1919507C3/en not_active Expired
- 1969-04-18 DK DK214469A patent/DK131253B/en unknown
- 1969-04-21 CH CH600269A patent/CH511496A/en not_active IP Right Cessation
- 1969-04-21 ES ES366285A patent/ES366285A1/en not_active Expired
- 1969-04-21 AT AT383569A patent/AT301908B/en not_active IP Right Cessation
- 1969-04-22 SE SE571169A patent/SE386299B/en unknown
- 1969-04-23 GB GB369171A patent/GB1271155A/en not_active Expired
- 1969-04-23 JP JP44031055A patent/JPS509515B1/ja active Pending
- 1969-04-23 FR FR6912840A patent/FR2011816A1/fr not_active Withdrawn
- 1969-04-23 BE BE731974D patent/BE731974A/xx unknown
- 1969-04-23 GB GB2074369A patent/GB1271154A/en not_active Expired
-
1970
- 1970-12-31 ES ES386979A patent/ES386979A1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE386299B (en) | 1976-08-02 |
| NL6805704A (en) | 1969-10-27 |
| DE1919507C3 (en) | 1982-06-09 |
| DE1919507A1 (en) | 1969-11-20 |
| ES366285A1 (en) | 1971-05-01 |
| DE1919507B2 (en) | 1979-12-06 |
| DE1966847A1 (en) | 1974-09-19 |
| DK131253B (en) | 1975-06-16 |
| AT301908B (en) | 1972-09-25 |
| BE731974A (en) | 1969-10-23 |
| NL162500B (en) | 1979-12-17 |
| ES386979A1 (en) | 1973-12-01 |
| CH511496A (en) | 1971-08-15 |
| JPS509515B1 (en) | 1975-04-14 |
| DK131253C (en) | 1975-11-17 |
| GB1271155A (en) | 1972-04-19 |
| FR2011816A1 (en) | 1970-03-13 |
| NL162500C (en) | 1980-05-16 |
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