GB1263817A - Improvements in or relating to integrated circuits - Google Patents

Improvements in or relating to integrated circuits

Info

Publication number
GB1263817A
GB1263817A GB5485569A GB5485569A GB1263817A GB 1263817 A GB1263817 A GB 1263817A GB 5485569 A GB5485569 A GB 5485569A GB 5485569 A GB5485569 A GB 5485569A GB 1263817 A GB1263817 A GB 1263817A
Authority
GB
United Kingdom
Prior art keywords
base regions
semi
parasitic transistor
region
adjacent base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5485569A
Inventor
Glyn John Odell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Electronics Ltd
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Priority to GB5485569A priority Critical patent/GB1263817A/en
Priority to AU20354/70A priority patent/AU2035470A/en
Priority to FR7040407A priority patent/FR2067080A1/fr
Priority to DE19702055299 priority patent/DE2055299A1/en
Publication of GB1263817A publication Critical patent/GB1263817A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,263,817. Semi-conductor devices. MARCONI CO. Ltd. 28 Aug., 1970 [10 Nov., 1969], No. 54855/69. Heading H1K. Means are provided for inhibiting or reducing parasitic transistor action between the base regions of switching transistors having a common collector region and constituting a highspeed integrated switching circuit by impeding the flow of minority carriers between the base regions. The means may comprise, for NPN transistors A, B, a P-type region I interposed between adjacent base regions. Alternative means are a region doped either with gold or so as to have N + conductivity, in order to reduce the transport factor of the parasitic transistor, or a field plate situated on the semi-conductor surface between adjacent base regions and arranged to carry a suitable potential.
GB5485569A 1969-11-10 1969-11-10 Improvements in or relating to integrated circuits Expired GB1263817A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB5485569A GB1263817A (en) 1969-11-10 1969-11-10 Improvements in or relating to integrated circuits
AU20354/70A AU2035470A (en) 1969-11-10 1970-09-25 Improvements in or relating to integrated circuits
FR7040407A FR2067080A1 (en) 1969-11-10 1970-11-10
DE19702055299 DE2055299A1 (en) 1969-11-10 1970-11-10 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5485569A GB1263817A (en) 1969-11-10 1969-11-10 Improvements in or relating to integrated circuits

Publications (1)

Publication Number Publication Date
GB1263817A true GB1263817A (en) 1972-02-16

Family

ID=10472266

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5485569A Expired GB1263817A (en) 1969-11-10 1969-11-10 Improvements in or relating to integrated circuits

Country Status (4)

Country Link
AU (1) AU2035470A (en)
DE (1) DE2055299A1 (en)
FR (1) FR2067080A1 (en)
GB (1) GB1263817A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
US4136355A (en) * 1976-02-10 1979-01-23 Matsushita Electronics Corporation Darlington transistor
GB1549130A (en) * 1977-06-01 1979-08-01 Hughes Microelectronics Ltd Cm Monolithic integrated circuit
IT1214806B (en) * 1984-09-21 1990-01-18 Ates Componenti Elettron INTEGRATED MONOLITHIC POWER AND SEMICONDUCTOR DEVICE

Also Published As

Publication number Publication date
AU2035470A (en) 1972-03-30
DE2055299A1 (en) 1971-05-27
FR2067080A1 (en) 1971-08-13

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