GB1299113A - Improvements in and relating to monolithic data storage matrices - Google Patents

Improvements in and relating to monolithic data storage matrices

Info

Publication number
GB1299113A
GB1299113A GB00254/70A GB1025470A GB1299113A GB 1299113 A GB1299113 A GB 1299113A GB 00254/70 A GB00254/70 A GB 00254/70A GB 1025470 A GB1025470 A GB 1025470A GB 1299113 A GB1299113 A GB 1299113A
Authority
GB
United Kingdom
Prior art keywords
collector
region
resistors
march
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB00254/70A
Inventor
Siegfried Kurt Wiedmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1299113A publication Critical patent/GB1299113A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

1299113 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 4 March 1970 [11 March 1969] 10254/70 Heading H1K [Also in Divisions G4 and H3] In a matrix of bi-stable cells each (Fig. 1, not shown) has a pair of diodes (D1, D2) connecting its collector loads (R1, R0) to a respective pair of bit lines (B1, B0) which have resistors (R0) lower than R1, R2 acting as loads for the bistable when it is addressed. In integrated form, Figs. 3, 3A, each transistor has an N epitaxial layer forming the collector, an N+ emitter region contacted by the W line, and a P base region contacted by a connector B and extended to contact the V1 line, the resistor R1 or R2 being formed in this extended P region as a pinch resistor by a covering N+ diffusion. This diffusion also forms a connection to the collector region and is connected by a metal connector to the opposite base B. The diodes D1, D2 are formed in the epitaxial layer N. P + isolation zones are provided, and the layout is said to require a reduced number of isolation zones to carry all the components. The resistors R1, R2 may be formed alternatively as further, complementary, transistors.
GB00254/70A 1969-03-11 1970-03-04 Improvements in and relating to monolithic data storage matrices Expired GB1299113A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1912176A DE1912176C2 (en) 1969-03-11 1969-03-11 Monolithic storage cell

Publications (1)

Publication Number Publication Date
GB1299113A true GB1299113A (en) 1972-12-06

Family

ID=5727705

Family Applications (1)

Application Number Title Priority Date Filing Date
GB00254/70A Expired GB1299113A (en) 1969-03-11 1970-03-04 Improvements in and relating to monolithic data storage matrices

Country Status (4)

Country Link
JP (1) JPS5120858B1 (en)
DE (1) DE1912176C2 (en)
FR (1) FR2059996B1 (en)
GB (1) GB1299113A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2131604A (en) * 1982-12-03 1984-06-20 Itt Ind Ltd Semiconductor memories
GB2195496A (en) * 1984-08-31 1988-04-07 Hitachi Ltd A semiconductor integrated circuit device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3421026A (en) * 1964-06-29 1969-01-07 Gen Electric Memory flip-flop
US3354440A (en) * 1965-04-19 1967-11-21 Ibm Nondestructive memory array
US3493788A (en) * 1967-01-16 1970-02-03 Ibm Memory cell having a resistance network to prevent saturation
FR1564148A (en) * 1967-05-25 1969-04-18

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2131604A (en) * 1982-12-03 1984-06-20 Itt Ind Ltd Semiconductor memories
US4663739A (en) * 1982-12-03 1987-05-05 Stc Plc Semiconductor memories
GB2195496A (en) * 1984-08-31 1988-04-07 Hitachi Ltd A semiconductor integrated circuit device
GB2195496B (en) * 1984-08-31 1989-05-17 Hitachi Ltd A semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS5120858B1 (en) 1976-06-28
FR2059996B1 (en) 1976-02-06
FR2059996A1 (en) 1971-06-11
DE1912176A1 (en) 1970-09-17
DE1912176C2 (en) 1983-10-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee