WO2011019209A3 - Composition d'agent de gravure destinée à former des interconnexions métalliques - Google Patents

Composition d'agent de gravure destinée à former des interconnexions métalliques Download PDF

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Publication number
WO2011019209A3
WO2011019209A3 PCT/KR2010/005277 KR2010005277W WO2011019209A3 WO 2011019209 A3 WO2011019209 A3 WO 2011019209A3 KR 2010005277 W KR2010005277 W KR 2010005277W WO 2011019209 A3 WO2011019209 A3 WO 2011019209A3
Authority
WO
WIPO (PCT)
Prior art keywords
film
etchant composition
metal film
indium
titanium
Prior art date
Application number
PCT/KR2010/005277
Other languages
English (en)
Korean (ko)
Other versions
WO2011019209A2 (fr
Inventor
양승재
이석준
장상훈
이준우
임민기
권오병
박영철
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090074367A external-priority patent/KR20110016724A/ko
Priority claimed from KR1020090083461A external-priority patent/KR20110025408A/ko
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN2010800356463A priority Critical patent/CN102471687A/zh
Publication of WO2011019209A2 publication Critical patent/WO2011019209A2/fr
Publication of WO2011019209A3 publication Critical patent/WO2011019209A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Abstract

L'invention concerne une composition d'agent de gravure destinée à un film métallique comprenant au moins un film sélectionné parmi un film conducteur transparent à base d'indium, un film métallique à base d'aluminium et un film métallique à base de titane, utilisé dans l'interconnexion d'une électrode de pixel, d'une électrode de grille, d'une électrode source et d'une électrode de drainage. La composition d'agent de gravure présente d'excellentes caractéristiques de gravure sur un film conducteur transparent à base d'indium, un film métallique à base d'aluminium et un film métallique à base de titane, respectivement, et plus particulièrement sur un film d'alliage à base d'Al-La. En outre, la composition d'agent de gravure permet de graver efficacement un film à trois couches comprenant un film conducteur transparent à base d'indium, un film d'alliage à base d'Al-La et un film métallique à base de titane en une fois.
PCT/KR2010/005277 2009-08-12 2010-08-11 Composition d'agent de gravure destinée à former des interconnexions métalliques WO2011019209A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800356463A CN102471687A (zh) 2009-08-12 2010-08-11 用于形成金属互连的刻蚀剂组合物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090074367A KR20110016724A (ko) 2009-08-12 2009-08-12 금속 배선 형성을 위한 식각액 조성물
KR10-2009-0074367 2009-08-12
KR1020090083461A KR20110025408A (ko) 2009-09-04 2009-09-04 금속 배선 형성을 위한 식각액 조성물
KR10-2009-0083461 2009-09-04

Publications (2)

Publication Number Publication Date
WO2011019209A2 WO2011019209A2 (fr) 2011-02-17
WO2011019209A3 true WO2011019209A3 (fr) 2011-06-03

Family

ID=43586648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005277 WO2011019209A2 (fr) 2009-08-12 2010-08-11 Composition d'agent de gravure destinée à former des interconnexions métalliques

Country Status (2)

Country Link
CN (1) CN102471687A (fr)
WO (1) WO2011019209A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102464392A (zh) * 2011-10-20 2012-05-23 常州亚环环保科技有限公司 一种去除高浓度含氯废水的复合除氯剂及其应用方法
KR20140063284A (ko) * 2012-11-16 2014-05-27 동우 화인켐 주식회사 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법
CN103087718B (zh) * 2013-01-16 2014-12-31 四川大学 湿法刻蚀镍酸镧薄膜和铁电薄膜/镍酸镧复合薄膜的腐蚀液及其制备方法
KR20180049844A (ko) * 2016-11-03 2018-05-14 삼성디스플레이 주식회사 식각액 조성물, 이를 이용한 배선 패턴 형성 방법 및 유기발광 표시장치의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050056153A (ko) * 2003-12-09 2005-06-14 간토 가가꾸 가부시키가이샤 포토레지스트 잔사 제거용 액상 조성물과 상기 조성물을사용한 반도체 회로 소자 제조공정
KR20060050581A (ko) * 2004-08-25 2006-05-19 삼성전자주식회사 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법
KR20060094706A (ko) * 2005-02-25 2006-08-30 동우 화인켐 주식회사 평판디스플레이의 박막트랜지스터 형성을 위한 금속 전극용식각액 조성물
KR20080018010A (ko) * 2006-08-23 2008-02-27 간또 가가꾸 가부시끼가이샤 티탄 및 알루미늄 금속 적층막용 에칭액 조성물
KR20080051249A (ko) * 2006-12-05 2008-06-11 동우 화인켐 주식회사 티타늄 또는 티타늄 합금막, 및 알루미늄 또는 알루미늄합금막을 포함하는 다층막 식각액 조성물

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050056153A (ko) * 2003-12-09 2005-06-14 간토 가가꾸 가부시키가이샤 포토레지스트 잔사 제거용 액상 조성물과 상기 조성물을사용한 반도체 회로 소자 제조공정
KR20060050581A (ko) * 2004-08-25 2006-05-19 삼성전자주식회사 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법
KR20060094706A (ko) * 2005-02-25 2006-08-30 동우 화인켐 주식회사 평판디스플레이의 박막트랜지스터 형성을 위한 금속 전극용식각액 조성물
KR20080018010A (ko) * 2006-08-23 2008-02-27 간또 가가꾸 가부시끼가이샤 티탄 및 알루미늄 금속 적층막용 에칭액 조성물
KR20080051249A (ko) * 2006-12-05 2008-06-11 동우 화인켐 주식회사 티타늄 또는 티타늄 합금막, 및 알루미늄 또는 알루미늄합금막을 포함하는 다층막 식각액 조성물

Also Published As

Publication number Publication date
CN102471687A (zh) 2012-05-23
WO2011019209A2 (fr) 2011-02-17

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