FR2807951B1 - Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteur - Google Patents
Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteurInfo
- Publication number
- FR2807951B1 FR2807951B1 FR0005096A FR0005096A FR2807951B1 FR 2807951 B1 FR2807951 B1 FR 2807951B1 FR 0005096 A FR0005096 A FR 0005096A FR 0005096 A FR0005096 A FR 0005096A FR 2807951 B1 FR2807951 B1 FR 2807951B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor equipment
- transfer chambers
- equipment transfer
- pumping semiconductor
- pumping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Non-Positive Displacement Air Blowers (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0005096A FR2807951B1 (fr) | 2000-04-20 | 2000-04-20 | Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteur |
US09/614,593 US6402479B1 (en) | 2000-04-20 | 2000-07-12 | Apparatus for pumping out transfer chambers for transferring semiconductor equipment |
EP01928018A EP1194610A1 (fr) | 2000-04-20 | 2001-04-20 | Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteur |
JP2001578718A JP2003531503A (ja) | 2000-04-20 | 2001-04-20 | 半導体装置の移送チャンバから排気する方法およびシステム |
PCT/FR2001/001219 WO2001081651A1 (fr) | 2000-04-20 | 2001-04-20 | Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteur |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0005096A FR2807951B1 (fr) | 2000-04-20 | 2000-04-20 | Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2807951A1 FR2807951A1 (fr) | 2001-10-26 |
FR2807951B1 true FR2807951B1 (fr) | 2003-05-16 |
Family
ID=8849456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0005096A Expired - Fee Related FR2807951B1 (fr) | 2000-04-20 | 2000-04-20 | Procede et systeme de pompage des chambres de transfert d'equipement de semi-conducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US6402479B1 (fr) |
EP (1) | EP1194610A1 (fr) |
JP (1) | JP2003531503A (fr) |
FR (1) | FR2807951B1 (fr) |
WO (1) | WO2001081651A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004510221A (ja) * | 2000-06-14 | 2004-04-02 | アプライド マテリアルズ インコーポレイテッド | 環境が制御されたチャンバ内で圧力を維持するための装置及び方法 |
US6663352B2 (en) * | 2001-07-25 | 2003-12-16 | Itt Manufacturing Enterprises, Inc. | Method and apparatus for dynamically determining vapor pressure in pumping systems |
EP1668253B1 (fr) * | 2003-09-26 | 2008-05-07 | Edwards Limited | Detection de contaminants dans un fluide pompe par une pompe a vide |
GB0329933D0 (en) * | 2003-12-24 | 2004-01-28 | Boc Group Plc | Load lock |
US8333569B2 (en) * | 2003-12-30 | 2012-12-18 | Intel Corporation | Method and apparatus for two-phase start-up operation |
US20070020115A1 (en) * | 2005-07-01 | 2007-01-25 | The Boc Group, Inc. | Integrated pump apparatus for semiconductor processing |
FR2940322B1 (fr) * | 2008-12-19 | 2011-02-11 | Alcatel Lucent | Procede de descente en pression dans un sas de chargement et de dechargement et equipement associe |
DE102012010522A1 (de) * | 2012-05-25 | 2013-11-28 | Hydac Fluidtechnik Gmbh | Ventil für Ventilanordnung |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5729577A (en) * | 1980-07-30 | 1982-02-17 | Anelva Corp | Automatic continuous sputtering apparatus |
US4835114A (en) * | 1986-02-19 | 1989-05-30 | Hitachi, Ltd. | Method for LPCVD of semiconductors using oil free vacuum pumps |
US4699570A (en) * | 1986-03-07 | 1987-10-13 | Itt Industries, Inc | Vacuum pump system |
US4987933A (en) * | 1989-03-03 | 1991-01-29 | Eaton Corporation | Fluid flow control method and apparatus for minimizing particle contamination |
WO1991009230A1 (fr) * | 1989-12-20 | 1991-06-27 | Allied-Signal Inc. | Turbopompe a vide a vitesse variable |
FR2656658B1 (fr) * | 1989-12-28 | 1993-01-29 | Cit Alcatel | Pompe a vide turbomoleculaire mixte, a deux arbres de rotation et a refoulement a la pression atmospherique. |
JPH04326943A (ja) * | 1991-04-25 | 1992-11-16 | Hitachi Ltd | 真空排気システム及び排気方法 |
US5314541A (en) * | 1991-05-28 | 1994-05-24 | Tokyo Electron Limited | Reduced pressure processing system and reduced pressure processing method |
US5766360A (en) * | 1992-03-27 | 1998-06-16 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
JPH06104178A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | 真空処理方法及び真空処理装置 |
JPH06173044A (ja) * | 1992-12-09 | 1994-06-21 | Kyocera Corp | アモルファスシリコン系成膜方法 |
US5733104A (en) * | 1992-12-24 | 1998-03-31 | Balzers-Pfeiffer Gmbh | Vacuum pump system |
JP3847357B2 (ja) * | 1994-06-28 | 2006-11-22 | 株式会社荏原製作所 | 真空系の排気装置 |
JPH08134649A (ja) * | 1994-11-14 | 1996-05-28 | Fujitsu Ltd | 半導体製造装置の圧力制御方法及び圧力制御装置 |
JPH0982651A (ja) * | 1995-09-14 | 1997-03-28 | Toshiba Corp | 半導体装置の製造方法 |
KR100189981B1 (ko) * | 1995-11-21 | 1999-06-01 | 윤종용 | 진공 시스템을 구비한 반도체 소자 제조장치 |
WO1997024760A1 (fr) * | 1995-12-28 | 1997-07-10 | Nippon Sanso Corporation | Procede et dispositif de transfert de substrats en plaques minces |
JP3555717B2 (ja) * | 1996-05-09 | 2004-08-18 | シャープ株式会社 | 半導体製造方法 |
KR0183912B1 (ko) * | 1996-08-08 | 1999-05-01 | 김광호 | 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법 |
JPH11204508A (ja) * | 1998-01-09 | 1999-07-30 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置 |
US6257835B1 (en) * | 1999-03-22 | 2001-07-10 | Quantachrome Corporation | Dry vacuum pump system for gas sorption analyzer |
JP2002541541A (ja) * | 1999-04-07 | 2002-12-03 | アルカテル | 真空チャンバ内の圧力を調整するためのシステム、このシステムを装備した真空ポンピングユニット |
-
2000
- 2000-04-20 FR FR0005096A patent/FR2807951B1/fr not_active Expired - Fee Related
- 2000-07-12 US US09/614,593 patent/US6402479B1/en not_active Expired - Fee Related
-
2001
- 2001-04-20 EP EP01928018A patent/EP1194610A1/fr not_active Withdrawn
- 2001-04-20 JP JP2001578718A patent/JP2003531503A/ja active Pending
- 2001-04-20 WO PCT/FR2001/001219 patent/WO2001081651A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1194610A1 (fr) | 2002-04-10 |
FR2807951A1 (fr) | 2001-10-26 |
JP2003531503A (ja) | 2003-10-21 |
US6402479B1 (en) | 2002-06-11 |
WO2001081651A1 (fr) | 2001-11-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |
Effective date: 20111230 |