FR2778012B1 - Dispositif et procede de lecture de cellules de memoire eeprom - Google Patents

Dispositif et procede de lecture de cellules de memoire eeprom

Info

Publication number
FR2778012B1
FR2778012B1 FR9805330A FR9805330A FR2778012B1 FR 2778012 B1 FR2778012 B1 FR 2778012B1 FR 9805330 A FR9805330 A FR 9805330A FR 9805330 A FR9805330 A FR 9805330A FR 2778012 B1 FR2778012 B1 FR 2778012B1
Authority
FR
France
Prior art keywords
memory cells
eeprom memory
reading eeprom
reading
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9805330A
Other languages
English (en)
Other versions
FR2778012A1 (fr
Inventor
Jean Devin
David Naura
Sebastien Zink
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR9805330A priority Critical patent/FR2778012B1/fr
Priority to US09/300,527 priority patent/US6219277B1/en
Publication of FR2778012A1 publication Critical patent/FR2778012A1/fr
Application granted granted Critical
Publication of FR2778012B1 publication Critical patent/FR2778012B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
FR9805330A 1998-04-28 1998-04-28 Dispositif et procede de lecture de cellules de memoire eeprom Expired - Fee Related FR2778012B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9805330A FR2778012B1 (fr) 1998-04-28 1998-04-28 Dispositif et procede de lecture de cellules de memoire eeprom
US09/300,527 US6219277B1 (en) 1998-04-28 1999-04-27 Device and method for the reading of EEPROM cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9805330A FR2778012B1 (fr) 1998-04-28 1998-04-28 Dispositif et procede de lecture de cellules de memoire eeprom

Publications (2)

Publication Number Publication Date
FR2778012A1 FR2778012A1 (fr) 1999-10-29
FR2778012B1 true FR2778012B1 (fr) 2001-09-28

Family

ID=9525770

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9805330A Expired - Fee Related FR2778012B1 (fr) 1998-04-28 1998-04-28 Dispositif et procede de lecture de cellules de memoire eeprom

Country Status (2)

Country Link
US (1) US6219277B1 (fr)
FR (1) FR2778012B1 (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291389A (ja) 2000-03-31 2001-10-19 Hitachi Ltd 半導体集積回路
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
US6584017B2 (en) * 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
US6535426B2 (en) 2001-08-02 2003-03-18 Stmicroelectronics, Inc. Sense amplifier circuit and method for nonvolatile memory devices
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
EP1426965A1 (fr) * 2002-12-04 2004-06-09 STMicroelectronics S.r.l. Circuit de lecture pour une cellule mémoire non-volatile, en particulier fonctionnant sous faible tension d'alimentation et hautes charges capacitives
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7237074B2 (en) 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
WO2005094178A2 (fr) * 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Procede, circuit et systemes pour effacer une ou plusieurs cellules de memoire non volatile
DE102004045207B3 (de) * 2004-09-17 2006-05-04 Infineon Technologies Ag Verfahren und Schaltungsanordnung zum Auslesen einer Flash-/EEPROM-Speicherzelle
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
DE102004055466B4 (de) * 2004-11-17 2006-09-21 Infineon Technologies Ag Einrichtung und Verfahren zum Messen von Speicherzell-Strömen
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) * 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) * 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
EP1746645A3 (fr) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Matrice de mémoire avec espacement des lignes de mot inférieur aux limites lithographiques et méthode de fabrication
US20070036007A1 (en) * 2005-08-09 2007-02-15 Saifun Semiconductors, Ltd. Sticky bit buffer
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US20070255889A1 (en) * 2006-03-22 2007-11-01 Yoav Yogev Non-volatile memory device and method of operating the device
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
ITMI20062211A1 (it) * 2006-11-17 2008-05-18 St Microelectronics Srl Circuito e metodo per generare una tensione di riferimento in dispositivi di memoria a matrice di celle non volatili
KR102025251B1 (ko) * 2012-10-31 2019-09-25 삼성전자주식회사 메모리 시스템 및 그것의 프로그램 방법
FR3059497A1 (fr) * 2016-11-25 2018-06-01 Exagan Procede et circuit de commande d'un dispositif de commutation d'un circuit de puissance

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173300A (ja) * 1984-09-17 1986-04-15 Toshiba Corp 半導体記憶装置
US5406514A (en) * 1991-12-21 1995-04-11 Kawasaki Steel Corporation Semiconductor memory
JPH08180697A (ja) * 1994-09-16 1996-07-12 Texas Instr Inc <Ti> センス増幅器用の基準電流を供給する基準回路及び方法
FR2734390B1 (fr) * 1995-05-19 1997-06-13 Sgs Thomson Microelectronics Circuit de detection de courant pour la lecture d'une memoire en circuit integre
JP3132637B2 (ja) * 1995-06-29 2001-02-05 日本電気株式会社 不揮発性半導体記憶装置
FR2760888B1 (fr) * 1997-03-11 1999-05-07 Sgs Thomson Microelectronics Circuit de lecture pour memoire adapte a la mesure des courants de fuite

Also Published As

Publication number Publication date
FR2778012A1 (fr) 1999-10-29
US6219277B1 (en) 2001-04-17

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Effective date: 20091231