FR2760888B1 - Circuit de lecture pour memoire adapte a la mesure des courants de fuite - Google Patents
Circuit de lecture pour memoire adapte a la mesure des courants de fuiteInfo
- Publication number
- FR2760888B1 FR2760888B1 FR9703219A FR9703219A FR2760888B1 FR 2760888 B1 FR2760888 B1 FR 2760888B1 FR 9703219 A FR9703219 A FR 9703219A FR 9703219 A FR9703219 A FR 9703219A FR 2760888 B1 FR2760888 B1 FR 2760888B1
- Authority
- FR
- France
- Prior art keywords
- reading circuit
- leakage currents
- memory suitable
- measuring leakage
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. by varying supply voltage
- G01R31/3004—Current or voltage test
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9703219A FR2760888B1 (fr) | 1997-03-11 | 1997-03-11 | Circuit de lecture pour memoire adapte a la mesure des courants de fuite |
US09/031,748 US5889702A (en) | 1997-03-11 | 1998-02-27 | Read circuit for memory adapted to the measurement of leakage currents |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9703219A FR2760888B1 (fr) | 1997-03-11 | 1997-03-11 | Circuit de lecture pour memoire adapte a la mesure des courants de fuite |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2760888A1 FR2760888A1 (fr) | 1998-09-18 |
FR2760888B1 true FR2760888B1 (fr) | 1999-05-07 |
Family
ID=9504869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9703219A Expired - Fee Related FR2760888B1 (fr) | 1997-03-11 | 1997-03-11 | Circuit de lecture pour memoire adapte a la mesure des courants de fuite |
Country Status (2)
Country | Link |
---|---|
US (1) | US5889702A (fr) |
FR (1) | FR2760888B1 (fr) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69827109D1 (de) * | 1998-02-13 | 2004-11-25 | St Microelectronics Srl | Abfühlverstärker für nichtflüchtigen Speicher mit niedriger Spannung |
FR2778012B1 (fr) * | 1998-04-28 | 2001-09-28 | Sgs Thomson Microelectronics | Dispositif et procede de lecture de cellules de memoire eeprom |
ATE287544T1 (de) * | 1999-05-14 | 2005-02-15 | Infineon Technologies Ag | Integrierte schaltung und verfahren zum bestimmen der stromergiebigkeit eines schaltungsteils der integrierten schaltung |
JP3596808B2 (ja) * | 2000-08-10 | 2004-12-02 | 沖電気工業株式会社 | 不揮発性半導体記憶装置 |
US6538922B1 (en) * | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
DE10113239C1 (de) * | 2001-03-19 | 2002-08-22 | Infineon Technologies Ag | Bewerterschaltung zum Auslesen einer in einer Speicherzelle gespeicherten Information |
EP1288955A3 (fr) * | 2001-08-17 | 2004-09-22 | Kabushiki Kaisha Toshiba | Dispositifs de mémoire à semiconducteurs |
US6538940B1 (en) * | 2002-09-26 | 2003-03-25 | Motorola, Inc. | Method and circuitry for identifying weak bits in an MRAM |
US7237074B2 (en) * | 2003-06-13 | 2007-06-26 | Sandisk Corporation | Tracking cells for a memory system |
DE10327284B4 (de) * | 2003-06-17 | 2005-11-03 | Infineon Technologies Ag | Prüflesevorrichtung für Speicher |
KR100517561B1 (ko) * | 2003-08-19 | 2005-09-28 | 삼성전자주식회사 | 불 휘발성 반도체 메모리 장치 |
US7301807B2 (en) | 2003-10-23 | 2007-11-27 | Sandisk Corporation | Writable tracking cells |
DE102004055466B4 (de) * | 2004-11-17 | 2006-09-21 | Infineon Technologies Ag | Einrichtung und Verfahren zum Messen von Speicherzell-Strömen |
CN100362902C (zh) * | 2004-11-18 | 2008-01-16 | 华为技术有限公司 | 一种实现过载拥塞控制的方法 |
ITTO20070109A1 (it) * | 2007-02-14 | 2008-08-15 | St Microelectronics Srl | Circuito e metodo di lettura per un dispositivo di memoria non volatile basati sulla generazione adattativa di una grandezza elettrica di riferimento |
US8068367B2 (en) | 2007-06-15 | 2011-11-29 | Micron Technology, Inc. | Reference current sources |
TWI334604B (en) * | 2007-06-25 | 2010-12-11 | Ind Tech Res Inst | Sensing circuits of phase change memory |
JP5127439B2 (ja) * | 2007-12-28 | 2013-01-23 | 株式会社東芝 | 半導体記憶装置 |
JP5331031B2 (ja) * | 2010-02-25 | 2013-10-30 | ラピスセミコンダクタ株式会社 | 電流検出回路 |
EP2641330B1 (fr) * | 2010-11-19 | 2016-04-27 | Hewlett-Packard Development Company, L.P. | Procédé et circuit destinés à commuter un dispositif memristif dans un réseau |
US8537625B2 (en) * | 2011-03-10 | 2013-09-17 | Freescale Semiconductor, Inc. | Memory voltage regulator with leakage current voltage control |
US9312002B2 (en) | 2014-04-04 | 2016-04-12 | Sandisk Technologies Inc. | Methods for programming ReRAM devices |
US10181358B2 (en) | 2016-10-26 | 2019-01-15 | Mediatek Inc. | Sense amplifier |
CN111435154B (zh) * | 2018-12-25 | 2022-08-09 | 北京兆易创新科技股份有限公司 | 漏电检测电路、闪存存储器漏电检测装置和漏电检测方法 |
CN113257322B (zh) * | 2021-06-21 | 2021-10-08 | 上海亿存芯半导体有限公司 | 读取电路及非易失性存储器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1244293B (it) * | 1990-07-06 | 1994-07-08 | Sgs Thomson Microelectronics | Dispositivo di lettura per celle eprom con campo operativo indipendente dal salto di soglia delle celle scritte rispetto alle celle vergini |
FR2665792B1 (fr) * | 1990-08-08 | 1993-06-11 | Sgs Thomson Microelectronics | Memoire integree pourvue de moyens de test ameliores. |
FR2690751B1 (fr) * | 1992-04-30 | 1994-06-17 | Sgs Thomson Microelectronics | Procede et circuit de detection de fuites de courant dans une ligne de bit. |
FR2694119B1 (fr) * | 1992-07-24 | 1994-08-26 | Sgs Thomson Microelectronics | Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture. |
JP3164663B2 (ja) * | 1992-09-25 | 2001-05-08 | オリンパス光学工業株式会社 | 光学式情報記録再生装置 |
EP0740307B1 (fr) * | 1995-04-28 | 2001-12-12 | STMicroelectronics S.r.l. | Circuit amplificateur de détection pour dispositifs de mémoire à semi-conducteurs |
US5530403A (en) * | 1995-05-03 | 1996-06-25 | Motorola, Inc. | Low-voltage differential amplifier |
FR2734390B1 (fr) * | 1995-05-19 | 1997-06-13 | Sgs Thomson Microelectronics | Circuit de detection de courant pour la lecture d'une memoire en circuit integre |
JP2800740B2 (ja) * | 1995-09-28 | 1998-09-21 | 日本電気株式会社 | 半導体記憶装置 |
-
1997
- 1997-03-11 FR FR9703219A patent/FR2760888B1/fr not_active Expired - Fee Related
-
1998
- 1998-02-27 US US09/031,748 patent/US5889702A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2760888A1 (fr) | 1998-09-18 |
US5889702A (en) | 1999-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20071130 |