FR2710190B1 - Module pour dispositif à semi-conducteur à haute puissance avec une résistance thermique faible et une fabrication simplifiée. - Google Patents
Module pour dispositif à semi-conducteur à haute puissance avec une résistance thermique faible et une fabrication simplifiée.Info
- Publication number
- FR2710190B1 FR2710190B1 FR9410965A FR9410965A FR2710190B1 FR 2710190 B1 FR2710190 B1 FR 2710190B1 FR 9410965 A FR9410965 A FR 9410965A FR 9410965 A FR9410965 A FR 9410965A FR 2710190 B1 FR2710190 B1 FR 2710190B1
- Authority
- FR
- France
- Prior art keywords
- terminal board
- ims
- board
- bosses
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Multi-Conductor Connections (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/122,052 US5408128A (en) | 1993-09-15 | 1993-09-15 | High power semiconductor device module with low thermal resistance and simplified manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2710190A1 FR2710190A1 (fr) | 1995-03-24 |
FR2710190B1 true FR2710190B1 (fr) | 1997-04-11 |
Family
ID=22400324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9410965A Expired - Fee Related FR2710190B1 (fr) | 1993-09-15 | 1994-09-14 | Module pour dispositif à semi-conducteur à haute puissance avec une résistance thermique faible et une fabrication simplifiée. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5408128A (fr) |
JP (1) | JP2801534B2 (fr) |
DE (1) | DE4430047C2 (fr) |
FR (1) | FR2710190B1 (fr) |
GB (1) | GB2282007B (fr) |
IT (1) | IT1280673B1 (fr) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002183A (en) * | 1995-05-04 | 1999-12-14 | Iversen; Arthur H. | Power semiconductor packaging |
JP2979923B2 (ja) * | 1993-10-13 | 1999-11-22 | 富士電機株式会社 | 半導体装置 |
JP3051011B2 (ja) * | 1993-11-18 | 2000-06-12 | 株式会社東芝 | パワ−モジュ−ル |
US5539254A (en) * | 1994-03-09 | 1996-07-23 | Delco Electronics Corp. | Substrate subassembly for a transistor switch module |
JP3316714B2 (ja) * | 1994-05-31 | 2002-08-19 | 三菱電機株式会社 | 半導体装置 |
DE4421319A1 (de) * | 1994-06-17 | 1995-12-21 | Abb Management Ag | Niederinduktives Leistungshalbleitermodul |
US5902959A (en) * | 1996-09-05 | 1999-05-11 | International Rectifier Corporation | Lead frame with waffled front and rear surfaces |
DE19646396C2 (de) * | 1996-11-11 | 2001-06-28 | Semikron Elektronik Gmbh | Leistungshalbleitermodul für verschiedene Schaltungsvarianten |
DE19719703C5 (de) * | 1997-05-09 | 2005-11-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul mit Keramiksubstrat |
US6828600B2 (en) * | 1997-05-09 | 2004-12-07 | Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh | Power semiconductor module with ceramic substrate |
DE19722355A1 (de) * | 1997-05-28 | 1998-12-03 | Bosch Gmbh Robert | Verfahren zur Herstellung elektrischer Baugruppen und elektrische Baugruppe |
US6147869A (en) * | 1997-11-24 | 2000-11-14 | International Rectifier Corp. | Adaptable planar module |
US6078501A (en) * | 1997-12-22 | 2000-06-20 | Omnirel Llc | Power semiconductor module |
US5895974A (en) * | 1998-04-06 | 1999-04-20 | Delco Electronics Corp. | Durable substrate subassembly for transistor switch module |
US6127727A (en) * | 1998-04-06 | 2000-10-03 | Delco Electronics Corp. | Semiconductor substrate subassembly with alignment and stress relief features |
US6166464A (en) * | 1998-08-24 | 2000-12-26 | International Rectifier Corp. | Power module |
US6302192B1 (en) * | 1999-05-12 | 2001-10-16 | Thermal Corp. | Integrated circuit heat pipe heat spreader with through mounting holes |
US6896039B2 (en) * | 1999-05-12 | 2005-05-24 | Thermal Corp. | Integrated circuit heat pipe heat spreader with through mounting holes |
US6362964B1 (en) | 1999-11-17 | 2002-03-26 | International Rectifier Corp. | Flexible power assembly |
DE10024377B4 (de) * | 2000-05-17 | 2006-08-17 | Infineon Technologies Ag | Gehäuseeinrichtung und darin zu verwendendes Kontaktelement |
JP2002026251A (ja) * | 2000-07-11 | 2002-01-25 | Toshiba Corp | 半導体装置 |
US20020185726A1 (en) * | 2001-06-06 | 2002-12-12 | North Mark T. | Heat pipe thermal management of high potential electronic chip packages |
US6729908B2 (en) * | 2001-07-31 | 2004-05-04 | Delphi Technologies, Inc. | Battery pack having perforated terminal arrangement |
US6534857B1 (en) * | 2001-11-02 | 2003-03-18 | Northrop Grumman Corporation | Thermally balanced power transistor |
DE10214448A1 (de) * | 2002-03-30 | 2003-10-16 | Hella Kg Hueck & Co | Trennschalter |
US6880626B2 (en) * | 2002-08-28 | 2005-04-19 | Thermal Corp. | Vapor chamber with sintered grooved wick |
KR20060079137A (ko) * | 2002-11-08 | 2006-07-05 | 베르트링크 코오퍼레이션. | 척추경 추간판 접근방법 및 그 장치 |
US6889755B2 (en) * | 2003-02-18 | 2005-05-10 | Thermal Corp. | Heat pipe having a wick structure containing phase change materials |
US6945317B2 (en) | 2003-04-24 | 2005-09-20 | Thermal Corp. | Sintered grooved wick with particle web |
US20050022976A1 (en) * | 2003-06-26 | 2005-02-03 | Rosenfeld John H. | Heat transfer device and method of making same |
US6994152B2 (en) * | 2003-06-26 | 2006-02-07 | Thermal Corp. | Brazed wick for a heat transfer device |
WO2005006395A2 (fr) * | 2003-06-26 | 2005-01-20 | Thermal Corp. | Dispositif de transfert de chaleur et procede de fabrication |
US6938680B2 (en) * | 2003-07-14 | 2005-09-06 | Thermal Corp. | Tower heat sink with sintered grooved wick |
DE102005037191A1 (de) * | 2005-08-06 | 2007-02-08 | Vorwerk & Co. Interholding Gmbh | Küchengefäß mit einem Heizboden |
DE112005003653B4 (de) * | 2005-08-26 | 2013-05-16 | Siemens Aktiengesellschaft | Leistungshalbleitermodul mit auf Schaltungsträger aufgebrachten Lastanschlusselementen und Anschlussklemmelementen |
JP4825259B2 (ja) * | 2008-11-28 | 2011-11-30 | 三菱電機株式会社 | 電力用半導体モジュール及びその製造方法 |
JP5283277B2 (ja) * | 2009-09-04 | 2013-09-04 | 日本インター株式会社 | パワー半導体モジュール |
CN102013578B (zh) * | 2009-09-07 | 2014-05-28 | 比亚迪股份有限公司 | 导体引出结构以及功率模块 |
US20110134607A1 (en) * | 2009-12-07 | 2011-06-09 | Schnetker Ted R | Solid state switch arrangement |
EP2688100B1 (fr) * | 2011-03-16 | 2018-08-22 | Fuji Electric Co., Ltd. | Module semiconducteur |
JP5954410B2 (ja) | 2012-03-28 | 2016-07-20 | 富士電機株式会社 | 半導体装置 |
CN104160504B (zh) | 2012-03-28 | 2017-05-17 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
JP5835466B2 (ja) | 2012-03-28 | 2015-12-24 | 富士電機株式会社 | 半導体装置 |
JP6071662B2 (ja) * | 2013-03-11 | 2017-02-01 | 京セラ株式会社 | パワー半導体モジュール |
JP6171586B2 (ja) | 2013-06-04 | 2017-08-02 | 富士電機株式会社 | 半導体装置 |
USD754084S1 (en) * | 2013-08-21 | 2016-04-19 | Mitsubishi Electric Corporation | Semiconductor device |
US9871126B2 (en) * | 2014-06-16 | 2018-01-16 | Infineon Technologies Ag | Discrete semiconductor transistor |
USD762597S1 (en) | 2014-08-07 | 2016-08-02 | Infineon Technologies Ag | Power semiconductor module |
EP3203515B1 (fr) * | 2014-09-30 | 2022-11-09 | Sansha Electric Manufacturing Co., Ltd. | Module semi-conducteur avec boîtier pour un contrôle visuel amélioré |
JP1529977S (fr) * | 2014-11-04 | 2015-07-27 | ||
USD748595S1 (en) * | 2015-02-03 | 2016-02-02 | Infineon Technologies Ag | Power semiconductor module |
USD755742S1 (en) * | 2015-02-18 | 2016-05-10 | Semiconductor Components Industries, Llc | Power device package |
USD755741S1 (en) * | 2015-02-18 | 2016-05-10 | Semiconductor Components Industries, Llc | Power device package |
USD759604S1 (en) * | 2015-06-17 | 2016-06-21 | Mitsubishi Electric Corporation | Semiconductor device |
JP2017183621A (ja) * | 2016-03-31 | 2017-10-05 | 富士通株式会社 | 電子機器 |
CN105789160B (zh) * | 2016-05-03 | 2017-05-24 | 扬州国扬电子有限公司 | 一种组合式电极及其三电平大功率模块 |
JP1578687S (fr) * | 2016-11-08 | 2017-06-12 | ||
WO2019012677A1 (fr) * | 2017-07-14 | 2019-01-17 | 新電元工業株式会社 | Module électronique |
US11183440B2 (en) | 2018-12-10 | 2021-11-23 | Gan Systems Inc. | Power modules for ultra-fast wide-bandgap power switching devices |
USD916039S1 (en) * | 2020-03-20 | 2021-04-13 | Sansha Electric Manufacturing Co., Ltd. | Semiconductor device |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2728313A1 (de) * | 1977-06-23 | 1979-01-04 | Siemens Ag | Halbleiterbauelement |
FR2503526A1 (fr) * | 1981-04-03 | 1982-10-08 | Silicium Semiconducteur Ssc | Boitier et procede de montage et d'interconnexion de composants semiconducteurs de moyenne puissance en boitier unique. |
FR2503932A1 (fr) * | 1981-04-08 | 1982-10-15 | Thomson Csf | Boitiers a cosses plates pour composants semi-conducteurs de moyenne puissance et procede de fabrication |
JPS5968958A (ja) * | 1982-10-12 | 1984-04-19 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタ組立体 |
JPS5972758A (ja) * | 1982-10-19 | 1984-04-24 | Mitsubishi Electric Corp | ゲ−トタ−ンオフサイリスタモジユ−ル |
BR8400122A (pt) * | 1983-01-12 | 1984-08-21 | Allen Bradley Co | Modulo semicondutor e embalagem de semicondutor aperfeicoada |
JPS60103649A (ja) * | 1983-11-11 | 1985-06-07 | Hitachi Ltd | 半導体装置 |
JPS63250164A (ja) * | 1987-04-07 | 1988-10-18 | Denki Kagaku Kogyo Kk | ハイパワ−用混成集積回路基板とその集積回路 |
DE3717489A1 (de) * | 1987-05-23 | 1988-12-01 | Asea Brown Boveri | Leistungshalbleitermodul und verfahren zur herstellung des moduls |
JPH0648874Y2 (ja) * | 1988-10-26 | 1994-12-12 | 富士電機株式会社 | 半導体装置 |
JPH02222565A (ja) * | 1989-02-23 | 1990-09-05 | Mitsubishi Electric Corp | 半導体装置 |
DE3931634A1 (de) * | 1989-09-22 | 1991-04-04 | Telefunken Electronic Gmbh | Halbleiterbauelement |
US4965710A (en) * | 1989-11-16 | 1990-10-23 | International Rectifier Corporation | Insulated gate bipolar transistor power module |
US5105259A (en) * | 1990-09-28 | 1992-04-14 | Motorola, Inc. | Thermally enhanced semiconductor device utilizing a vacuum to ultimately enhance thermal dissipation |
US5194933A (en) * | 1990-10-05 | 1993-03-16 | Fuji Electric Co., Ltd. | Semiconductor device using insulation coated metal substrate |
JPH04354156A (ja) * | 1991-05-31 | 1992-12-08 | Fuji Electric Co Ltd | 半導体スイッチング装置 |
JPH0515450U (ja) * | 1991-08-06 | 1993-02-26 | 株式会社三社電機製作所 | 電力用半導体モジユール |
JP2656416B2 (ja) * | 1991-12-16 | 1997-09-24 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法、並びに半導体装置に用いられる複合基板および複合基板の製造方法 |
-
1993
- 1993-09-15 US US08/122,052 patent/US5408128A/en not_active Expired - Fee Related
-
1994
- 1994-08-24 DE DE19944430047 patent/DE4430047C2/de not_active Expired - Fee Related
- 1994-09-05 GB GB9417776A patent/GB2282007B/en not_active Expired - Fee Related
- 1994-09-08 IT IT94MI001840 patent/IT1280673B1/it active IP Right Grant
- 1994-09-14 FR FR9410965A patent/FR2710190B1/fr not_active Expired - Fee Related
- 1994-09-14 JP JP22061494A patent/JP2801534B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ITMI941840A0 (it) | 1994-09-08 |
FR2710190A1 (fr) | 1995-03-24 |
JPH07240497A (ja) | 1995-09-12 |
GB9417776D0 (en) | 1994-10-26 |
DE4430047C2 (de) | 1997-05-22 |
GB2282007B (en) | 1997-05-28 |
GB2282007A (en) | 1995-03-22 |
JP2801534B2 (ja) | 1998-09-21 |
DE4430047A1 (de) | 1995-03-23 |
ITMI941840A1 (it) | 1996-03-08 |
US5408128A (en) | 1995-04-18 |
IT1280673B1 (it) | 1998-01-26 |
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