FR2635613B1 - Dispositif a semiconducteurs mos - Google Patents
Dispositif a semiconducteurs mosInfo
- Publication number
- FR2635613B1 FR2635613B1 FR898910970A FR8910970A FR2635613B1 FR 2635613 B1 FR2635613 B1 FR 2635613B1 FR 898910970 A FR898910970 A FR 898910970A FR 8910970 A FR8910970 A FR 8910970A FR 2635613 B1 FR2635613 B1 FR 2635613B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- mos semiconductor
- mos
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63206107A JPH0254969A (ja) | 1988-08-19 | 1988-08-19 | Mos型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2635613A1 FR2635613A1 (fr) | 1990-02-23 |
FR2635613B1 true FR2635613B1 (fr) | 1991-11-08 |
Family
ID=16517918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR898910970A Expired - Lifetime FR2635613B1 (fr) | 1988-08-19 | 1989-08-17 | Dispositif a semiconducteurs mos |
Country Status (4)
Country | Link |
---|---|
US (1) | US4969024A (fr) |
JP (1) | JPH0254969A (fr) |
DE (1) | DE3924930C2 (fr) |
FR (1) | FR2635613B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05110085A (ja) * | 1991-10-14 | 1993-04-30 | Mitsubishi Electric Corp | 電界効果型半導体装置およびその製造方法 |
EP0841702A1 (fr) * | 1996-11-11 | 1998-05-13 | STMicroelectronics S.r.l. | DMOSFET latéral ou vertical avec haute tension de claquage |
ATE457084T1 (de) * | 1998-12-18 | 2010-02-15 | Infineon Technologies Ag | Feldeffekt-transistoranordnung mit einer grabenförmigen gate-elektrode und einer zusätzlichen hochdotierten schicht im bodygebiet |
CN103035634B (zh) * | 2011-10-09 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | 能够提高雪崩耐量能力的超结器件结构 |
US11383878B2 (en) | 2012-07-31 | 2022-07-12 | Vanguard Packaging, Llc | Box container and display |
US9238523B1 (en) * | 2012-07-31 | 2016-01-19 | Vanguard Packaging, Inc. | Box container and display |
CN108281486B (zh) * | 2017-12-29 | 2021-04-02 | 江苏东晨电子科技有限公司 | 一种雪崩耐量增强型的vdmos器件结构及其制作方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5690434A (en) * | 1979-12-19 | 1981-07-22 | Hitachi Ltd | Optical information reproducing device |
JPS57199903A (en) * | 1981-06-03 | 1982-12-08 | Matsushita Electric Ind Co Ltd | Position detector |
JPS5826331A (ja) * | 1981-08-11 | 1983-02-16 | Nippon Telegr & Teleph Corp <Ntt> | 光学ヘツド |
US4803532A (en) * | 1982-11-27 | 1989-02-07 | Nissan Motor Co., Ltd. | Vertical MOSFET having a proof structure against puncture due to breakdown |
JPS59152543A (ja) * | 1983-02-21 | 1984-08-31 | Toshiba Corp | 光学式デイスクレコ−ド再生装置 |
JPS618745A (ja) * | 1984-06-20 | 1986-01-16 | Mitsubishi Electric Corp | 光学式情報再生装置 |
GB2165090A (en) * | 1984-09-26 | 1986-04-03 | Philips Electronic Associated | Improving the field distribution in high voltage semiconductor devices |
JPS61156882A (ja) * | 1984-12-28 | 1986-07-16 | Toshiba Corp | 二重拡散形絶縁ゲ−ト電界効果トランジスタ及びその製造方法 |
JPS62163372A (ja) * | 1986-01-14 | 1987-07-20 | Toshiba Corp | 電界効果型半導体装置 |
JPS6381862A (ja) * | 1986-09-25 | 1988-04-12 | Fuji Electric Co Ltd | 絶縁ゲ−ト型バイポ−ラトランジスタ |
JP2511010B2 (ja) * | 1987-01-13 | 1996-06-26 | 日産自動車株式会社 | 縦型mosトランジスタの製造方法 |
-
1988
- 1988-08-19 JP JP63206107A patent/JPH0254969A/ja active Pending
-
1989
- 1989-07-27 DE DE3924930A patent/DE3924930C2/de not_active Expired - Fee Related
- 1989-08-17 FR FR898910970A patent/FR2635613B1/fr not_active Expired - Lifetime
- 1989-08-21 US US07/396,556 patent/US4969024A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0254969A (ja) | 1990-02-23 |
FR2635613A1 (fr) | 1990-02-23 |
DE3924930A1 (de) | 1990-02-22 |
DE3924930C2 (de) | 1998-07-02 |
US4969024A (en) | 1990-11-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |