FR2582151B1 - Dispositif a semiconducteur du type transistor bipolaire - Google Patents
Dispositif a semiconducteur du type transistor bipolaireInfo
- Publication number
- FR2582151B1 FR2582151B1 FR858519138A FR8519138A FR2582151B1 FR 2582151 B1 FR2582151 B1 FR 2582151B1 FR 858519138 A FR858519138 A FR 858519138A FR 8519138 A FR8519138 A FR 8519138A FR 2582151 B1 FR2582151 B1 FR 2582151B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- bipolar transistor
- transistor type
- type
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
- H01L29/1008—Base region of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59277893A JPS61150372A (ja) | 1984-12-25 | 1984-12-25 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2582151A1 FR2582151A1 (fr) | 1986-11-21 |
| FR2582151B1 true FR2582151B1 (fr) | 1989-03-24 |
Family
ID=17589752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR858519138A Expired FR2582151B1 (fr) | 1984-12-25 | 1985-12-24 | Dispositif a semiconducteur du type transistor bipolaire |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4772932A (fr) |
| JP (1) | JPS61150372A (fr) |
| KR (1) | KR940006690B1 (fr) |
| CA (1) | CA1237538A (fr) |
| DE (1) | DE3545435A1 (fr) |
| FR (1) | FR2582151B1 (fr) |
| GB (1) | GB2168848B (fr) |
| NL (1) | NL8503532A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3639433A1 (de) * | 1986-11-18 | 1988-05-26 | Licentia Gmbh | Halbleiteranordnung |
| US5063427A (en) * | 1987-10-13 | 1991-11-05 | Northrop Corporation | Planar bipolar transistors including heterojunction transistors |
| EP0366861A1 (fr) * | 1988-10-20 | 1990-05-09 | International Business Machines Corporation | Transistor balistique semi-conducteur |
| DE4101167A1 (de) * | 1991-01-17 | 1992-07-23 | Daimler Benz Ag | Anordnung und verfahren zur herstellung komplementaerer feldeffekttransistoren |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57178374A (en) * | 1981-04-27 | 1982-11-02 | Sumitomo Electric Ind Ltd | Junction type field-efect transistor and its manufacture |
| JPS5893380A (ja) * | 1981-11-30 | 1983-06-03 | Fujitsu Ltd | 半導体装置 |
| JPS59210672A (ja) * | 1983-05-16 | 1984-11-29 | Hitachi Ltd | 半導体装置 |
| JP2604349B2 (ja) * | 1984-12-12 | 1997-04-30 | 日本電気株式会社 | 半導体装置 |
-
1984
- 1984-12-25 JP JP59277893A patent/JPS61150372A/ja active Pending
-
1985
- 1985-12-14 KR KR1019850009406A patent/KR940006690B1/ko not_active IP Right Cessation
- 1985-12-20 DE DE19853545435 patent/DE3545435A1/de not_active Ceased
- 1985-12-20 GB GB08531442A patent/GB2168848B/en not_active Expired
- 1985-12-20 NL NL8503532A patent/NL8503532A/nl not_active Application Discontinuation
- 1985-12-23 US US06/812,377 patent/US4772932A/en not_active Expired - Fee Related
- 1985-12-24 FR FR858519138A patent/FR2582151B1/fr not_active Expired
- 1985-12-24 CA CA000498553A patent/CA1237538A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2168848A (en) | 1986-06-25 |
| DE3545435A1 (de) | 1986-06-26 |
| CA1237538A (fr) | 1988-05-31 |
| GB2168848B (en) | 1988-04-20 |
| NL8503532A (nl) | 1986-07-16 |
| FR2582151A1 (fr) | 1986-11-21 |
| GB8531442D0 (en) | 1986-02-05 |
| KR940006690B1 (ko) | 1994-07-25 |
| KR860005449A (ko) | 1986-07-23 |
| JPS61150372A (ja) | 1986-07-09 |
| US4772932A (en) | 1988-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |